Kyono, JP
Fumiyo Kyono, Okayama JP
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20090263339 | AGENT FOR EXTERNAL APPLICATION TO THE SKIN - The present invention has an object to provide an agent for suppressing melanin production and/or inhibiting elastase activity containing a plant extract as an effective substance with high safety and acceptable levels of stability and odor or sediment formation and an agent for external application to the skin comprising the above agent which has excellent effects in skin-whitening and skin-beautifying. The object is attained by providing an agent for external application to the skin containing indigo-plant extract. | 10-22-2009 |
20100034757 | EXTRACT POWDER OF INDIGO PLANT, AND ITS PREPARATION AND USES - The present invention has objects to provide an extract powder of indigo plant, which has a relatively low hygroscopicity, satisfactory fluidability, and improved storage stability; a process thereof; and a composition incorporated with the extract powder. The objects are solved by a process for producing an extract powder of indigo plant, which comprises incorporating a partial starch hydrolyzate with a dextrose equivalent of 10.2 or lower into one part by weight, on a dry solid basis, of an indigo plant extract contained in a liquid extract of indigo plant in an amount of not lower than 0.25 part by weight but not higher than 5 parts by weight, on a dry solid basis, and drying the resulting mixture; an extract powder of indigo plant prepared thereby; and a composition incorporated with the extract powder. | 02-11-2010 |
Hiroshi Kyono, Tokyo JP
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20120188599 | IMAGE FORMING SYSTEM, PRINT DATA MANAGEMENT DEVICE, AND METHOD OF CONTROLLING PRINT DATA MANAGEMENT DEVICE - An image forming system includes: an information processing apparatus; a print data management device; and an image forming apparatus communicably connected each other. The print data management device includes a print data managing unit that manages and stores the print data transmitted from the information processing apparatus, a request print data transmission unit that transmits the print data to the image forming apparatus in response to a request from the image forming apparatus, a history information generating unit that generates history information for the print data, a history information acquiring unit that, from the image forming apparatus, acquires at least the history information added with the identification information from among the history information relating to print output stored in the storage medium of the image forming apparatus, and a history information managing unit that manages and stores the history information into the storage medium. | 07-26-2012 |
Hisako Kyono, Yokohama-Shi JP
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20150031998 | OBJECT INFORMATION ACQUIRING APPARATUS AND CONTROL METHOD THEREOF - Provided is an object information acquiring apparatus including: a holding unit that holds an object; a probe that receives an acoustic wave that propagates from the object; a housing that constitutes a holding container; a matching solution that is filled inside the holding container; and a pressure adjustment unit including a liquid quantity adjustment section that adjusts the quantity of the matching solution, and a distance adjustment section that adjusts the distance between the holding container and the object, wherein the pressure adjustment unit performs a first compression which increases a pressure applied to the object to a predetermined pressure value, and then performs a second compression which maintains the predetermined pressure value, while decreasing the liquid quantity inside the holding container. | 01-29-2015 |
Takashi Kyono, Hyogo JP
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20090026440 | Nitride semiconductor light-emitting element - A nitride semiconductor light-emitting element | 01-29-2009 |
Takashi Kyono, Osaka JP
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20130009202 | GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group-III nitride semiconductor device includes a light emitting layer emitting light of a wavelength in the range of 480 to 600 nm; a first contact layer over the light emitting layer; a second contact layer in direct contact with the first contact layer; and a metal electrode in direct contact with the second contact layer. The first and second contact layers comprise a p-type gallium nitride-based semiconductor. The p-type dopant concentration of the first contact layer is lower than that of the second contact layer. The light emitting layer comprises a gallium nitride-based semiconductor. The interface between the first and second contact layers tilts at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis extending along the c-axis. The second contact layer has a thickness within the range of 1 to 50 nm. | 01-10-2013 |
20130105762 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF FABRICATING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE | 05-02-2013 |
20130156060 | LASER DIODE DEVICE AND METHOD OF MANUFACTURING LASER DIODE DEVICE - A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface. | 06-20-2013 |
20130208747 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of In | 08-15-2013 |
20150050768 | LASER DIODE DEVICE AND METHOD OF MANUFACTURING LASER DIODE DEVICE - A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface. | 02-19-2015 |
Takashi Kyono, Osaka-Shi JP
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20130142210 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region and p-type cladding constitute a waveguide-structure. The active layer and the first inner-layer constitute a first heterojunction inclined at an angle greater than zero with respect to a reference plane of the c-plane of the nitride semiconductor of the n-type cladding. Piezoelectric polarization of the well layer is oriented in a direction from the p-type cladding toward the n-type cladding. The second inner-layer and InGaN well layer constitute a second heterojunction. A distance between the ridge bottom and the second heterojunction is 200 nm or less. The ridge includes a third heterojunction between the second inner-layer and the p-type cladding. | 06-06-2013 |
20130177035 | NITRIDE SEMICONDUCTOR LASER, EPITAXIAL SUBSTRATE - A nitride semiconductor laser comprises a conductive support base having a primary surface of gallium nitride based semiconductor, an active layer on the primary surface, and a p-type cladding region on the primary surface. The primary surface is tilted to a reference plane perpendicular to a reference axis extending in the c-axis direction of the gallium nitride based semiconductor. The p-type cladding region comprises a first p-type group III nitride semiconductor layer of an AlGaN layer anisotropically-strained, and a second p-type group III nitride semiconductor layer of material different from the AlGaN layer. The first p-type group III nitride semiconductor layer is provided between the second p-type group III nitride semiconductor layer and the active layer. The AlGaN layer has the largest bandgap in the p-type cladding region. The second p-type group III nitride semiconductor layer has a resistivity lower than the first p-type group III nitride semiconductor layer. | 07-11-2013 |
Takayoshi Kyono, Yokohama JP
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20100310008 | CIRCUIT TRANSMISSION APPARATUS AND TRANSMISSION METHOD - A transmission apparatus includes: a multiplier configured to multiply a signal provided on a complex plane by a multiplication coefficient corresponding to a number of transmission sub-carriers; and an inverse fast Fourier transformer configured to perform an inverse fast Fourier transform on the multiplied signal. | 12-09-2010 |
Yoichi Kyono, Niiza-Shi JP
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20120320637 | SWITCHING POWER SOURCE APPARATUS - A switching power source apparatus has a pulse generator of a first pulse. A first resonant series circuit receives the first pulse signal and passes a current having a 90-degree phase delay with respect to the first pulse signal. The current of the first resonant series circuit turns on/off a switching element Q | 12-20-2012 |
20130009675 | GATE DRIVER - A gate driver of a switching element Q | 01-10-2013 |
Yoichi Kyono, Saitama JP
Patent application number | Description | Published |
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20090045851 | DEVICE FOR DRIVING SWITCHING ELEMENTS - A device for driving switching elements is provided with a potential detector | 02-19-2009 |
20090256423 | MULTIPLE OUTPUT SWITCHING POWER SOURCE APPARATUS - A multiple output switching power source apparatus includes first and second switching elements Q | 10-15-2009 |
20100046251 | MULTIPLE-OUTPUT SWITCHING POWER SOURCE APPARATUS - A multiple-output switching power source apparatus has a series resonant circuit connected in parallel with a switch Q | 02-25-2010 |
20100109434 | MULTIPLE OUTPUT SWITCHING POWER SOURCE APPARATUS - A multiple output switching power source apparatus includes first and second transformers each having a primary winding, a first secondary winding, and a second secondary winding; a first control circuit adjusting a time for applying a DC voltage to the primary winding of the first transformer; a first rectifying-smoothing circuit rectifying and smoothing a voltage generated at the first secondary winding of the first transformer and providing a first output voltage; a second control circuit adjusting a time for applying the DC voltage to the primary winding of the second transformer; a second rectifying-smoothing circuit rectifying and smoothing a voltage generated at the first secondary winding of the second transformer and providing a second output voltage; and a third rectifying-smoothing circuit rectifying and smoothing a voltage across a series winding having the second secondary windings of the first and second transformers and providing a third output voltage. | 05-06-2010 |
20100172159 | MULTIPLE-OUTPUT SWITCHING POWER SUPPLY UNIT - A multiple-output switching power supply unit includes: a voltage generating circuit Q | 07-08-2010 |
20110002146 | MULTIPLE OUTPUT SWITCHING POWER SOURCE APPARATUS - A multiple-output switching power source apparatus includes a control circuit to adjust a time for applying a DC voltage to a primary winding of a transformer by turning on/off a switching element Q | 01-06-2011 |
20110051468 | SWITCHING POWER-SUPPLY APPARATUS - A switching power-supply apparatus includes a first converter | 03-03-2011 |
20110227640 | POWER SUPPLY DEVICE - In a power supplying system that includes a plurality of power supply devices, each of which has a backflow prevention circuit at an output side thereof, and supplies power to a load device, a backflow prevention circuit is configured by using a hetero-junction FET (HEMT). A normally-on type GaNFET is used for the hetero-junction FET (HEMT), so that the backflow prevention circuit is further simplified. | 09-22-2011 |
20110278925 | SWITCHING POWER SUPPLY DEVICE - In conventional multi-output switching power supply device, power is supplied from a relatively high voltage side output to a relatively low voltage side output through a dropper circuit which generates relatively large power loss so as to improve the voltage accuracy of a non-stabilized output, so that power supply efficiency is low and heat generated from the dropper circuit is high. | 11-17-2011 |