Joei
Masahiro Joei, Toyama JP
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20090051037 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A semiconductor device relating to the present invention has multiple gate electrodes arranged on a semiconductor substrate at a narrow spacing and an interlayer insulating film covering the gate electrodes. The interlayer insulating film consists of a hygroscopic insulating film filling gate electrode spacing with a thinner thickness on the gate electrodes than the film thickness on the flat surface of the semiconductor substrate and low-hygroscopic insulating film formed on the hygroscopic insulating film. This structure enables suppressing an increase of contact resistance due to H | 02-26-2009 |
20110086510 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A semiconductor device relating to the present invention has multiple gate electrodes arranged on a semiconductor substrate at a narrow spacing and an interlayer insulating film covering the gate electrodes. The interlayer insulating film consists of a hygroscopic insulating film filling gate electrode spacing with a thinner thickness on the gate electrodes than the film thickness on the flat surface of the semiconductor substrate and low-hygroscopic insulating film formed on the hygroscopic insulating film. This structure enables suppressing an increase of contact resistance due to H | 04-14-2011 |
Masahiro Joei, Louvain BE
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20090261478 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention constitutes a semiconductor device wherein a Ni-containing metal silicide layer is formed on a semiconductor substrate and its uppermost surface is nitrided. According to this structure, a dangling bond of silicon existing in the metal silicide layer and nitrogen are bonded by nitridation of the uppermost surface of the metal silicide layer. Therefore, diffusion of oxygen into the metal silicide layer can be suppressed. As a result, electrical insulation due to oxidation of the metal silicide layer can be reduced and the contact resistance can be stabilized. | 10-22-2009 |
Masahiro Joei, Kanagawa JP
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20150070556 | SOLID STATE IMAGE SENSOR, PRODUCTION METHOD THEREOF AND ELECTRONIC DEVICE - A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode. | 03-12-2015 |