Patent application number | Description | Published |
20090261454 | CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A Ru | 10-22-2009 |
20090263967 | Method of forming noble metal layer using ozone reaction gas - A noble metal layer is formed using ozone (O | 10-22-2009 |
20100012989 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device, and a method of fabricating the semiconductor device, which is able to prevent a leaning phenomenon from occurring between the adjacent storage nodes. The method includes forming a plurality of multi-layered pillar type storage nodes each of which is buried in a plurality of mold layers, wherein the uppermost layers of the multi-layered pillar type storage nodes are fixed by a support layer, etching a portion of the support layer to form an opening, and supplying an etch solution through the opening to remove the multiple mold layers. A process of depositing and etching the mold layer by performing the process 2 or more times to form the multi-layered pillar type storage node. Thus, the desired capacitance is sufficiently secured and the leaning phenomenon is avoided between adjacent storage nodes. | 01-21-2010 |
20100046138 | ELECTRODE IN SEMICONDUCTOR DEVICE, CAPACITOR AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities. | 02-25-2010 |
20120147519 | ELECTRODE IN SEMICONDUCTOR DEVICE, CAPACITOR AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities. | 06-14-2012 |
20130022744 | METHOD OF FORMING NOBLE METAL LAYER USING OZONE REACTION GAS - A noble metal layer is formed using ozone (O | 01-24-2013 |
Patent application number | Description | Published |
20090273882 | CAPACITOR AND METHOD FOR FABRICATING THE SAME - A capacitor includes a first electrode, a dielectric layer, and a second electrode. The capacitor also includes a buffer layer formed over at least one of an interface between the first electrode and the dielectric layer and an interface between the dielectric layer and the second electrode, wherein the buffer layer includes a compound of a metal element from electrode materials of one of the first and second electrodes and a metal element from materials included in the dielectric layer. | 11-05-2009 |
20110128668 | ELECTRODE OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING CAPACITOR - An electrode of a semiconductor device includes a TiCN layer and a TiN layer. A method for fabricating an electrode of a semiconductor device includes preparing a substrate, forming a TiCN layer, and forming a TiN layer. | 06-02-2011 |
20120146196 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a IV group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer. | 06-14-2012 |
20120273921 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a dielectric layer, where the dielectric layer includes a metal oxide layer, a metal nitride carbide layer including hydrogen therein, and a reduction prevention layer inserted between the metal nitride carbide layer and the dielectric layer. | 11-01-2012 |
20130171797 | METHOD FOR FORMING MULTI-COMPONENT LAYER, METHOD FOR FORMING MULTI-COMPONENT DIELECTRIC LAYER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method of forming a multi-component dielectric layer on the surface of a substrate by atomic layer deposition includes injecting a cocktail source of a plurality of sources at least having a cyclopentadienyl ligand, wherein the cocktail source is adsorbed on a surface of a substrate by injecting the cocktail source, performing a first purge process to remove a non-adsorbed portion of the cocktail source, injecting a reactant to react with the adsorbed cocktail source, wherein a multi-component layer is formed by the reaction between the reactant and the absorbed cocktail source, and performing a second purge process to remove reaction byproducts and an unreacted portion of the reactant. | 07-04-2013 |
20130244394 | METHOD FOR FABRICATING CAPACITOR WITH HIGH ASPECT RATIO - A method for fabricating a capacitor includes: forming a first silicon layer over a semiconductor substrate, where the first silicon layer is doped with a dopant; forming an undoped second silicon layer over the first silicon layer; forming an opening by etching the second silicon layer and the first silicon layer; forming a storage node in the opening; and removing the first silicon layer and the second silicon layer. | 09-19-2013 |
20140242772 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a IV group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer. | 08-28-2014 |
Patent application number | Description | Published |
20090002917 | CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A capacitor includes a lower electrode, a dielectric layer over the lower electrode, and an upper electrode having a stack structure including a ruthenium-containing layer and a tungsten-containing layer over the dielectric layer. | 01-01-2009 |
20090008743 | CAPACITOR WITH PILLAR TYPE STORAGE NODE AND METHOD FOR FABRICATING THE SAME - A capacitor includes a pillar-type storage node, a supporter filling an inner empty crevice of the storage node, a dielectric layer over the storage node, and a plate node over the dielectric layer. | 01-08-2009 |
20090061587 | METHOD FOR FABRICATING CAPACITOR IN SEMICONDUCTOR DEVICE - A method for fabricating a capacitor includes providing a substrate having a capacitor region is employed, forming a first Ru | 03-05-2009 |
20110169134 | CAPACITOR WITH PILLAR TYPE STORAGE NODE AND METHOD FOR FABRICATING THE SAME - A capacitor includes a pillar-type storage node, a supporter disposed entirely within an inner empty crevice of the storage node, a conductive capping layer over the supporter and contacting the storage node so as to seal an entrance to the inner empty crevice, a dielectric layer over the storage node, and a plate node over the dielectric layer. | 07-14-2011 |