Patent application number | Description | Published |
20080272490 | Semiconductor device including ruthenium electrode and method for fabricating the same - A semiconductor device includes a semiconductor substrate, an insulation pattern on the semiconductor substrate, and an etch stop layer on the insulating pattern, the insulation pattern and the etch stop layer defining a contact hole that exposes the substrate, a first plug filled in a portion of the contact hole, a diffusion barrier layer formed above the first plug and in a bottom portion and on sidewalls of a remaining portion of the contact hole, a second plug formed on the diffusion barrier layer and filled in the contact hole, and a storage node coupled to and formed on the second plug. | 11-06-2008 |
20090002917 | CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A capacitor includes a lower electrode, a dielectric layer over the lower electrode, and an upper electrode having a stack structure including a ruthenium-containing layer and a tungsten-containing layer over the dielectric layer. | 01-01-2009 |
20090004808 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a capacitor includes forming a sacrificial layer having a plurality of trenches on an upper portion of a substrate, forming storage nodes in the trenches, exposing upper portions of the storage nodes by removing a portion of the sacrificial layer, forming supporters to support the exposed upper portions of the storage nodes, removing the sacrificial layer under the supporters, and removing the supporters. | 01-01-2009 |
20090008743 | CAPACITOR WITH PILLAR TYPE STORAGE NODE AND METHOD FOR FABRICATING THE SAME - A capacitor includes a pillar-type storage node, a supporter filling an inner empty crevice of the storage node, a dielectric layer over the storage node, and a plate node over the dielectric layer. | 01-08-2009 |
20090061587 | METHOD FOR FABRICATING CAPACITOR IN SEMICONDUCTOR DEVICE - A method for fabricating a capacitor includes providing a substrate having a capacitor region is employed, forming a first Ru | 03-05-2009 |
20100276804 | SEMICONDUCTOR DEVICE INCLUDING RUTHENIUM ELECTRODE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a semiconductor substrate, an insulation pattern on the semiconductor substrate, and an etch stop layer on the insulating pattern, the insulation pattern and the etch stop layer defining a contact hole that exposes the substrate, a first plug filled in a portion of the contact hole, a diffusion barrier layer formed above the first plug and in a bottom portion and on sidewalls of a remaining portion of the contact hole, a second plug fainted on the diffusion barrier layer and filled in the contact hole, and a storage node coupled to and formed on the second plug. | 11-04-2010 |
20110169134 | CAPACITOR WITH PILLAR TYPE STORAGE NODE AND METHOD FOR FABRICATING THE SAME - A capacitor includes a pillar-type storage node, a supporter disposed entirely within an inner empty crevice of the storage node, a conductive capping layer over the supporter and contacting the storage node so as to seal an entrance to the inner empty crevice, a dielectric layer over the storage node, and a plate node over the dielectric layer. | 07-14-2011 |
20110171807 | METHOD FOR FABRICATING CAPACITOR - A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose upper outer walls of the storage nodes. A sacrificial pattern is formed over the isolation layer to enclose the upper outer walls of the storage nodes. The isolation layer in the peripheral region is etched to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed. | 07-14-2011 |
20110171808 | METHOD FOR FABRICATING A CAPACITOR - A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. A sacrificial pattern is formed over the isolation layer and covers the cell region. The isolation layer is etched in the peripheral region to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed. | 07-14-2011 |
Patent application number | Description | Published |
20100240188 | METHOD FOR FABRICATING CAPACITOR - A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer. | 09-23-2010 |
20120007032 | PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area. | 01-12-2012 |
20120009731 | METHOD OF MANUFACTURING PHASE-CHANGE RANDOM ACCESS MEMORY - A method of a phase-change random access memory (PCRAM) device is provided. The method includes forming a heat pad on a substrate, forming a phase-change material layer by injecting a deposition gas for a phase-change material and a reaction gas on the heat pad, where the phase-change material includes tellurium (Te), forming an upper electrode electrically connected to the phase-change material layer, where the tellurium (Te) is added at a ratio smaller than a normal chemical stoichiometric ratio of materials constituting the phase-change material layer. | 01-12-2012 |
20120153247 | SEMICONDUCTOR DEVICE HAVING RESISTIVE DEVICE - A semiconductor memory device includes a plurality of word lines vertically formed on a surface of a semiconductor substrate, where each pair of the plurality of word lines form a set of word lines, a bit line formed parallel to the surface of the semiconductor substrate and disposed in plurality stacked between the word lines of each pair constituting the one set of word lines, and unit memory cells disposed between respective ones of the bit lines and an adjacent one of the pair of word lines of said one of the word line sets. | 06-21-2012 |
20130099188 | PHASE-CHANGE MEMORY DEVICE HAVING MULTI-LEVEL CELL AND A METHOD OF MANUFACTURING THE SAME - A phase change memory device including a multi-level cell and a method of manufacturing the same are provided. The device includes a first phase-change material layer to which a current is provided from a heating electrode, and a second phase-change material layer formed with continuity to the first phase-change material layer and having a different width from the first phase-change material layer, and to which a current is provided from a heating electrode. | 04-25-2013 |
Patent application number | Description | Published |
20090261454 | CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A Ru | 10-22-2009 |
20090263967 | Method of forming noble metal layer using ozone reaction gas - A noble metal layer is formed using ozone (O | 10-22-2009 |
20100012989 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device, and a method of fabricating the semiconductor device, which is able to prevent a leaning phenomenon from occurring between the adjacent storage nodes. The method includes forming a plurality of multi-layered pillar type storage nodes each of which is buried in a plurality of mold layers, wherein the uppermost layers of the multi-layered pillar type storage nodes are fixed by a support layer, etching a portion of the support layer to form an opening, and supplying an etch solution through the opening to remove the multiple mold layers. A process of depositing and etching the mold layer by performing the process 2 or more times to form the multi-layered pillar type storage node. Thus, the desired capacitance is sufficiently secured and the leaning phenomenon is avoided between adjacent storage nodes. | 01-21-2010 |
20100046138 | ELECTRODE IN SEMICONDUCTOR DEVICE, CAPACITOR AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities. | 02-25-2010 |
20120147519 | ELECTRODE IN SEMICONDUCTOR DEVICE, CAPACITOR AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities. | 06-14-2012 |
20130022744 | METHOD OF FORMING NOBLE METAL LAYER USING OZONE REACTION GAS - A noble metal layer is formed using ozone (O | 01-24-2013 |
20130126815 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material. | 05-23-2013 |