Patent application number | Description | Published |
20090029509 | Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device - A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber. | 01-29-2009 |
20090242892 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin film comprising SiO | 10-01-2009 |
20090261359 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF | 10-22-2009 |
20100134709 | REFLECTIVE LIQUID CRYSTAL DISPLAY PANEL AND DEVICE USING SAME - There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated. | 06-03-2010 |
20100144077 | SUBSTRATE PROCESSING APPARATUS AND METHOD AND A MANUFACTURING METHOD OF A THIN FILM SEMICONDUCTOR DEVICE - A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber. | 06-10-2010 |
20110101360 | SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME - A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved. | 05-05-2011 |
20120019739 | REFLECTIVE LIQUID CRYSTAL DISPLAY PANEL AND DEVICE USING SAME - There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated. | 01-26-2012 |
20120105788 | ELECTRONIC DEVICE HAVING LIQUID CRYSTAL DISPLAY DEVICE - A display device of the present invention includes a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode, a silicon nitride film formed over the thin film transistor, a resin film formed over the silicon nitride film, an inorganic insulating film formed over the resin film; a metal layer formed over the substrate; and a sealing material formed over the metal layer, wherein the sealing material covers a region where the resin film is not formed over the silicon nitride film. | 05-03-2012 |
20120119213 | SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME - A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved. | 05-17-2012 |
20120268681 | SEMICONDUCTOR CIRCUIT FOR ELECTRO-OPTICAL DEVICE AND METHOD OF MANUFACTURING THE SAME - In a monolithic active matrix circuit formed on a substrate, the active regions of at least a part of the thin film transistors (TFTs) constituting the peripheral circuit for driving the matrix region are added with a metal element for promoting the crystallization of silicon at a concentration of 1×10 | 10-25-2012 |
20130215351 | REFLECTIVE LIQUID CRYSTAL DISPLAY PANEL AND DEVICE USING SAME - There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated. | 08-22-2013 |
20140125936 | ELECTRONIC DEVICE HAVING LIQUID CRYSTAL DISPLAY DEVICE - A display device of the present invention includes a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode, a silicon nitride film formed over the thin film transistor, a resin film formed over the silicon nitride film, an inorganic insulating film formed over the resin film; a metal layer formed over the substrate; and a sealing material formed over the metal layer, wherein the sealing material covers a region where the resin film is not formed over the silicon nitride film. | 05-08-2014 |
Patent application number | Description | Published |
20100140113 | GAS SENSOR CONTROL APPARATUS AND METHOD - There is provided a control apparatus for a gas sensor, which has a sensor element equipped with first and second oxygen pumping cells. The sensor control apparatus is configured to drive the first oxygen pumping cell to adjust the oxygen concentration of gas under measurement, drive the second oxygen pumping cell to produce a flow of electric current according to the amount of oxygen pumped out of the oxygen concentration adjusted gas by the second oxygen pumping cell, perform specific drive control to control the amount of oxygen pumped by the second oxygen pumping cell to a predetermined level after startup of the sensor element and before the application of the drive voltage between the electrodes of the second oxygen pumping cell. | 06-10-2010 |
20110132775 | SENSOR CONTROL DEVICE AND SENSOR CONTROL METHOD - [Objective] An object is to provide a sensor control apparatus and a sensor-control-apparatus control method which can reduce variation in startup time among a plurality of times of execution of detection processing, in consideration of variation in output characteristic among a plurality of gas sensors. | 06-09-2011 |
20120006093 | GAS SENSOR - [Objective] To provide a gas sensor in which the insulation among conduction members is stably secured through stable maintenance of the insulation property of a separator provided within a sheath, whereby a normal output can be obtained from a detection element. | 01-12-2012 |
20120211362 | GAS SENSOR ELEMENT AND GAS SENSOR - There is provided a gas sensor element for detecting the concentration of a specific gas component in gas under measurement, which includes a plate-shaped element body and a porous protection layer. The element body has, at one end portion thereof, a gas sensing portion formed with a solid electrolyte substrate and a pair of electrodes. The porous protection layer has a porous structure formed of ceramic particles and surrounds at least the circumference of the one end portion of the element body. In the present invention, the porous protection layer has an inner region, an intermediate region and an outer region laminated together in order of mention from the element body toward the outside. The intermediate region has a porosity lower than those of the inner and outer regions. There is also provided a gas sensor with such a gas sensor element. | 08-23-2012 |
20120211374 | NOx CONCENTRATION DETECTION APPARATUS AND NOx CONCENTRATION DETECTION METHOD - An apparatus and method for individually detecting NO and NO | 08-23-2012 |
20120234697 | SENSOR CONTROL APPARATUS, SENSOR CONTROL SYSTEM, AND SENSOR CONTROL METHOD - A sensor control apparatus is disclosed, including a preliminary control for supplying a constant current to a second oxygen pump cell of a gas sensor for a constant period of time so as to control to a constant level the amount of oxygen pumped out from a second measurement chamber (S | 09-20-2012 |
20130032480 | GAS SENSOR - A gas sensor ( | 02-07-2013 |
20130104625 | GAS SENSOR ELEMENT AND GAS SENSOR | 05-02-2013 |
20140130572 | GAS SENSOR ELEMENT AND GAS SENSOR - A gas sensor element and a gas sensor incorporating the gas sensor element. The gas sensor element ( | 05-15-2014 |
20140291150 | GAS SENSOR ELEMENT, AND GAS SENSOR - A gas sensor element ( | 10-02-2014 |