Patent application number | Description | Published |
20090294968 | SUPPRESSION OF LOCALIZED METAL PRECIPITATE FORMATION AND CORRESPONDING METALLIZATION DEPLETION IN SEMICONDUCTOR PROCESSING - A structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire. | 12-03-2009 |
20110012249 | IC CHIP PACKAGE HAVING IC CHIP WITH OVERHANG AND/OR BGA BLOCKING UNDERFILL MATERIAL FLOW AND RELATED METHODS - An IC chip package, in one embodiment, may include an IC chip including an upper surface including an overhang extending beyond a sidewall of the IC chip, and underfill material about the sidewall and under the overhang. The overhang prevents underfill material from extending over an upper surface of the IC chip. In another embodiment, a ball grid array (BGA) is first mounted to landing pads on a lower of two joined IC chip packages. Since the BGA is formed on the lower IC chip package first, the BGA acts as a dam for the underfill material thereon. The underfill material extends about the respective IC chip and surrounds a bottom portion of a plurality of solder elements of the BGA and at least a portion of respective landing pads thereof. | 01-20-2011 |
20110193218 | Solder Interconnect with Non-Wettable Sidewall Pillars and Methods of Manufacture - A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall. | 08-11-2011 |
20140077367 | SOLDER INTERCONNECT WITH NON-WETTABLE SIDEWALL PILLARS AND METHODS OF MANUFACTURE - A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall. | 03-20-2014 |
Patent application number | Description | Published |
20090260778 | LOW PROFILE HEAT SINK FOR SEMICONDUCTOR DEVICES - A heat sink for cooling a heat-generating device includes a base and a cooling section coupled thereto for cooling the device. The cooling section includes a plurality of flow tubes, each flow tube having an inlet, an outlet, and a bounding wall that defines a closed fluid flow path from the inlet to the outlet. Each of the flow tubes includes a central axis that is substantially parallel to a reference plane of the heat-generating device. The flow tubes may be arranged in a layered stack and include a bounding wall that has a thickness that decreases with increasing distance in the layered stack. The flow tubes may also include a cross-sectional area that decreases with increasing distance in the layered stack. Furthermore, the bounding wall of the flow tubes may have a non-planar configuration in a direction generally parallel to the central axis. | 10-22-2009 |
20140042594 | INHIBITING PROPAGATION OF IMPERFECTIONS IN SEMICONDUCTOR DEVICES - Aspects of the disclosure provide a method of inhibiting crack propagation in a silicon wafer. In one embodiment, a method of repairing an imperfection on a surface of a semiconductor device is disclosed. The method includes: screening for imperfections on a surface of a silicon wafer of a semiconductor device; and in response to at least one imperfection on the surface of the silicon wafer, depositing a material on the surface of the silicon wafer. | 02-13-2014 |
20140042630 | CONTROLLED COLLAPSE CHIP CONNECTION (C4) STRUCTURE AND METHODS OF FORMING - Aspects of the present invention relate to a controlled collapse chip connection (C4) structures. Various embodiments include a method of forming a controlled collapse chip connection (C4) structure. The method can include: providing a precursor structure including: a substrate, a dielectric over the substrate, the dielectric including a plurality of trenches exposing a portion of the substrate, and a metal layer over the dielectric and the portion of the substrate in each of the plurality of trenches, forming a resist layer over the metal layer, forming a rigid liner over a surface of the resist layer and the metal layer, and forming solder over the rigid liner between portions of the resist layer. | 02-13-2014 |
20140346619 | DETECTING SUDDEN CHANGES IN ACCELERATION IN SEMICONDUCTOR DEVICE OR SEMICONDUCTOR PACKAGING CONTAINING SEMICONDUCTOR DEVICE - An approach for detecting sudden changes in acceleration in a semiconductor device or semiconductor package containing the semiconductor device is disclosed. In one embodiment, a piezoelectric sensor is embedded in a semiconductor die. The piezoelectric sensor is configured to sense a mechanical force applied to the semiconductor die. An excessive force indicator is coupled to the piezoelectric sensor. The excessive force indicator is configured to generate an excessive force indication in response to the piezoelectric sensor sensing that the mechanical force applied to the semiconductor die has exceeded a predetermined threshold indicative of an excessive mechanical force. | 11-27-2014 |
Patent application number | Description | Published |
20090256268 | PARTIALLY UNDERFILLED SOLDER GRID ARRAYS - An electronic device and a method of forming the device. The device including a module having opposite top surface and bottom surfaces; a first set of pads on the top surface of the module and a second set of pads on the bottom surface of the module substrate, wires within the module electrically connecting the first set of pads to the second set of pads; a set of solder interconnects in electrical and physical contact with a the second set of module pads; and a dielectric underfill layer formed on the bottom surface of the module, the underfill layer filling the space between lower regions of the solder interconnects of the set of solder interconnects, upper regions of the solder interconnects of the set of solder interconnects extending past a top surface of the underfill layer. | 10-15-2009 |
20090273095 | Rectangular-Shaped Controlled Collapse Chip Connection - A rectangular-shaped controlled collapse chip connection (C | 11-05-2009 |
20090279275 | METHOD OF ATTACHING AN INTEGRATED CIRCUIT CHIP TO A MODULE - A method of attaching an integrated circuit chip to a module and a resultant structure. The method includes placing a solder bump tape between the chip and the module, the solder bump tape including an array of solder columns embedded in a dielectric sheet; aligning and contacting top surfaces of solder columns with respective chip pads of an array of chip pads of the chip and aligning and contacting bottom surfaces of the solder columns with respective module pads of an array of module pads; and reflowing the solder columns to form solder interconnections between chip pads and respective module pads. | 11-12-2009 |
20090321914 | PRODUCTION OF INTEGRATED CIRCUIT CHIP PACKAGES PROHIBITING FORMATION OF MICRO SOLDER BALLS - Methods for making, and structures so made for producing integrated circuit (IC) chip packages without forming micro solder balls. In one embodiment, a method may include placing a solid grid made from an organic material between the IC chip and the substrate. The grid provides a physical barrier between each of a plurality of Controlled Collapse Chip Connections, and thereby prevents the formation of micro solder balls between them, thus improving chip performance and reliability. | 12-31-2009 |
20130257624 | VISUALLY DETECTING ELECTROSTATIC DISCHARGE EVENTS - Methods and structures provide an electrostatic discharge (ESD) indicator including an electric field sensitive material configured to undergo a specific color change in response to an electric field. An exposure of the structure to an ESD can be visually determined via the specific color change of the ESD indicator. | 10-03-2013 |
20140183723 | STACKED MULTI-CHIP PACKAGE AND METHOD OF MAKING SAME - Stacked multichip packages and methods of making multichip packages. A method includes using a boat having different depth openings corresponding to the length of column interconnections of the completed multichip package and masks to place proper length columns in the corresponding depth openings; placing an integrated circuit chip on the boat and attaching exposed upper ends of the columns to respective chip pads of the integrated circuit using a first solder reflow process and attaching a preformed package substrate integrated circuit chip stack to the integrated circuit and attached columns using a second solder reflow process. | 07-03-2014 |