Patent application number | Description | Published |
20090152671 | METHOD FOR MANUFACTURING SIMOX WAFER AND SIMOX WAFER - This method for manufacturing a SIMOX wafer includes: heating a silicon wafer to 300° C. or more and implanting oxygen ions so as to form a high oxygen concentration layer within the silicon wafer; subjecting the silicon wafer to a cooling to less than 300° C. and an implanting of oxygen ions so as to form an amorphous layer; and subjecting the silicon wafer to a heat-treating in a mixed gas atmosphere containing oxygen so as to form a buried oxide layer. In the forming of the buried oxide layer, a starting temperature is less than 1350° C. and a maximum temperature is 1350° C. or more. This SIMOX wafer is manufactured by the above method and includes a BOX layer and a SOI layer on the BOX layer. The BOX layer has a thickness of 1300 Å or more and a breakdown voltage of 7 MV/cm or more, and the surface of the SOI layer and the interface between the SOI layer and the BOX layer have a roughness over a 10-μm square area of 4 Å rms or less. | 06-18-2009 |
20090260570 | OXYGEN ION IMPLANTATION EQUIPMENT - In oxygen ion implantation equipment, a chamber has a bottom wall on one end face thereof and is open in the other end face thereof. A wafer holder rotatably holding a plurality of wafers on the same circumference of a circle is housed in the chamber. Inside a cap closing an opening of the chamber while making the chamber airtight with a sealing member, a coolant passage is formed near the sealing member. A plurality of lamp heaters are disposed so as to extend in the direction of the tangent to the circumference of the cap and align parallel to the direction of the radius of the cap, in such a way as to face one wafer held by the wafer holder. When the plurality of lamp heaters are divided into inner lamps located on the inner side of the cap in the direction of the radius thereof and outer lamps located on the outer side of the cap in the direction of the radius thereof, the amount of heat applied to the wafer per unit time by the outer lamps is made larger than the amount of heat applied to the wafer per unit time by the inner lamps. | 10-22-2009 |
20090314964 | ION-IMPLANTING APPARATUS - An ion-implanting apparatus comprising a holding unit that holds at least a semiconductor wafer and swings the wafer along a circular orbit, wherein an ion-beam is irradiated to a region that overlaps a part of the circular orbit; the holding unit comprises three or more holding pins that hold the wafer; the holding pins include a first type holding pin at least a portion of which being in contact with an edge of the wafer is made of a material selected from a thermo-setting resin and a photo-setting resin, and a second type holding pin at least a portion of which being in contact with the wafer is made of a material that contains graphite; and the first type holding pin of the plurality of holding pins is placed at a tail end position with respect to a direction of swinging the wafer. | 12-24-2009 |
20090321874 | EPITAXIAL WAFER AND PRODUCTION METHOD THEREOF - A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer. | 12-31-2009 |
20100006779 | ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD - This ion implantation apparatus is provided with a holding devise which holds the wafer, and which turns it along its circumference. In addition to holding the wafer at a prescribed position, the ion implantation apparatus subjects the wafer to ion implantation in regions where there is partial overlap of its circumference. The holding devise turns and inclines the wafer, and also holds the wafer by three or more holding pins. The side face of the holding pin has an inversely tapered shape, and the multiple holding pins include a first holding pin whose protrusion amount is relatively small, and a second holding pin whose protrusion amount is relatively large. The holding pin which is on the upper side from the center of the wafer in the planar direction of the inclined wafer is the second holding pin, and the angle of inclination of the side face of the second holding pin at a position where ions are implanted into the wafer has an angular degree which is equal to or less than an angle of incidence of the ion beam relative to the wafer. | 01-14-2010 |
20100012856 | WAFER HOLDING TOOL FOR ION IMPLANTING APPARATUS - A wafer holding assembly is provided that is capable of preventing the temperature difference generated between a wafer and a holding pin through beam irradiation. | 01-21-2010 |
20100022066 | METHOD FOR PRODUCING HIGH-RESISTANCE SIMOX WAFER - A method for producing a high-resistance SIMOX wafer wherein oxygen diffused inside of a wafer by the heat treatment at a high temperature in an oxidizing atmosphere can be reduced to suppress the occurrence of thermal donor. In one embodiment, a heating-rapid cooling treatment is conducted after the heat treatment at a high temperature in an oxidizing atmosphere to implant vacancies from a surface of a wafer into an interior thereof to thereby easily precipitate oxygen diffused inside the wafer during the heat treatment. | 01-28-2010 |
20120126361 | EPITAXIAL WAFER AND PRODUCTION METHOD THEREOF - A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer. | 05-24-2012 |
20140210777 | DISPLAY DEVICE - According to one embodiment, a display device includes a display pixel allocated at a matrix state in a display area, an image-reading device which detects strength of capacitive coupling by a dielectric material coming close to or making contact with the display area, and a control portion which controls each transistor of the image-reading device. The image-reading device includes a detection electrode which forms capacitance between the detection electrode and the dielectric material, a pre-charge gate line, a coupling pulse line, a readout gate line, a pre-charge line and a readout line. These lines supply a signal which drives the image-reading device. The image-reading device further includes a pre-charge transistor, an amplification transistor, a readout transistor, a compensation transistor, and a power-source switching transistor. | 07-31-2014 |
20140333852 | DISPLAY DEVICE - According to one embodiment, a display device includes a display panel having a counter substrate, an array substrate and a liquid crystal layer held therebetween, a counter electrode provided on the counter substrate, a pixel electrode arranged on the array substrate in a matrix, a sensor circuit arranged between rows of the plurality of pixel electrodes and configured to read out intensity of capacitive coupling between the sensor circuit and a dielectric, and a counter electrode drive circuit configured to pulsatively drive a common voltage added to the counter electrode during a period of driving the sensor circuit, wherein the sensor circuit comprises a detection electrode configured to form capacitance between the sensor circuit and the dielectric and to form capacitance between the sensor circuit and the counter electrode, and wherein the counter electrode comprises an aperture including at least a portion opposed to the detection electrode. | 11-13-2014 |
20150097810 | DISPLAY DEVICE - According to one embodiment, a lateral-electric-field liquid crystal display device includes a light-emitting display layer including OLEDs and a driving circuit controlling light emission of the OLEDs, a moisture impermeable film provided to be laminated on the light-emitting display layer to prevent infiltration of moisture into the light-emitting display layer, an optical substrate provided separately from the moisture impermeable film and subjecting light from the light-emitting display region to optical processing, a first touch electrode group serving as one electrode group of touch electrodes and provided on a back surface of the optical substrate, and an extraction electrode group formed to be laminated on the moisture impermeable film, the extraction electrode group and the optical substrate have an overlapping part in plan view, and electrodes of the first touch electrode group being electrically connected to electrodes of the extraction electrode group in the overlapping part. | 04-09-2015 |
20150109267 | DISPLAY DEVICE - According to one embodiment, a display device includes a unit pixel, a scanning line, and first to fourth signal lines. The first to fourth signal lines are extended in a columnar direction and are spaced apart from each other. The first and second signal lines are positioned in a region opposed to first and second pixel electrodes in a row direction. The third and fourth signal lines are positioned in a region opposed to third and fourth pixel electrodes in the row direction. | 04-23-2015 |