Patent application number | Description | Published |
20100085112 | Method of Manufacturing a Transistor, and Method of Controlling a Threshold Voltage of the Transistor - A transistor has a gate electrode, a gate insulation layer structure, a channel layer and source/drain layers. The gate insulation layer structure includes a lower gate insulation layer, a control layer for controlling a threshold voltage of the transistor, and an upper gate insulation layer. The channel layer contacts a surface of the gate insulation layer structure and vertically overlaps the gate electrode. The source/drain layers are adjacent to but not contacting the gate electrode. | 04-08-2010 |
20100123128 | Semiconductor Devices Having Channel Layer Patterns on a Gate Insulation Layer - Semiconductor devices include a gate electrode, a gate insulation layer, a first channel layer pattern, a second channel layer pattern and first and second metallic patterns. The gate electrode is on a substrate. The gate insulation layer is on the gate electrode. The first channel layer pattern is on the gate insulation layer, and has a first conductivity level. The second channel layer pattern is on the first channel layer pattern, and has a second conductivity level that is lower than the first conductivity level. The first and second metallic patterns are on the gate insulation layer and contact respective sidewalls of the first and second channel layer patterns. | 05-20-2010 |
20100123201 | Semiconductor Devices - A semiconductor device includes a substrate, a first channel layer pattern, a second channel layer pattern, a first transistor and a second transistor. The substrate has a first region and a second region. The first channel layer pattern is formed in the first region of the substrate and has a first volume. The second channel layer pattern is formed in the second region of the substrate and has a second volume that is different from the first volume. The first transistor includes a first gate insulation layer pattern on the first channel layer pattern, a first gate electrode on the first gate insulation layer pattern, and a first source/drain region in contact with the first channel layer pattern. The second transistor includes a second gate insulation layer pattern on the second channel layer pattern, a second gate electrode on the second gate insulation layer pattern, and a second source/drain region in contact with the second channel layer pattern. | 05-20-2010 |
20100200831 | Non-volatile memory devices and methods of fabricating the same - Non-volatile memory devices including a lower electrode formed on a substrate; an active memory material formed on the lower electrode; an upper electrode formed on the active memory material; and an adhesive layer formed in part of a region between the active memory material and the upper electrode. | 08-12-2010 |
20100301425 | SEMICONDUCTOR DEVICE HAVING A GATE CONTACT STRUCTURE CAPABLE OF REDUCING INTERFACIAL RESISTANCE - A semiconductor device has a gate contact structure, including a semiconductor substrate, a polycrystalline silicon layer used as a gate electrode of a transistor, a middle conductive layer, a top metal layer having an opening exposing the polycrystalline silicon layer, and a contact plug directly contacting the polycrystalline silicon layer through the opening. | 12-02-2010 |
20110095351 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A semiconductor device includes a device isolation layer in a semiconductor substrate, an active region defined by the device isolation layer, the active region including a main surface and a recess region including a bottom surface that is lower than the main surface, and a gate electrode formed over the recess region, wherein a top surface of the device isolation layer adjacent to the recess region is lower than the bottom surface of the recess region. | 04-28-2011 |
20110108704 | Image sensors and methods of operating the same - Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively. | 05-12-2011 |
20110141060 | Optical touch panels and methods of driving the same - An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel. | 06-16-2011 |
20110156020 | Transistor - Provided is a transistor including a semiconductor insertion layer between a channel layer and a source electrode. A potential barrier between the channel layer and the source electrode may be increased by the semiconductor insertion layer. The channel layer may be an oxide semiconductor layer. The transistor may be an enhancement mode transistor. | 06-30-2011 |
20110156114 | Image sensor using light-sensitive transparent oxide semiconductor material - An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region. | 06-30-2011 |
20110168993 | Transistors and methods of manufacturing the same - Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions. | 07-14-2011 |
20110241989 | Remote touch panel using light sensor and remote touch screen apparatus having the same - A remote touch panel includes a plurality of light sensor cells arranged in two dimensions. Each light sensor cell may include a light-sensitive semiconductor layer and first and second electrodes electrically connected to the light-sensitive semiconductor layer. The remote touch panel may be controlled at a remote distance. For example, a large display apparatus can be easily controlled by using a simple light source device, for example, a laser pointer. | 10-06-2011 |
20110242384 | Image sensor using light-sensitive device and method of operating the image sensor - Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of light-sensing cells wherein each of the light-sensing cells includes a light-sensitive oxide semiconductor layer that forms a channel region of an oxide semiconductor transistor. Electronic characteristics of the light-sensitive oxide semiconductor layer vary according to an amount of light irradiated onto the light-sensitive oxide semiconductor layer. Each of the light-sensing cells constitutes a single unit color pixel. | 10-06-2011 |
20110261017 | Light sensing circuit, and remote optical touch panel and image acquisition apparatus including the light sensing circuit - Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified. | 10-27-2011 |
20110284722 | Light-sensing circuit, method of operating the light-sensing circuit, and light-sensing apparatus employing the light-sensing circuit - Example embodiments are directed to a light-sensing circuit, a method of operating the light-sensing circuit, and a light-sensing apparatus including the light-sensing circuit. The light-sensing circuit includes a light-sensitive oxide semiconductor transistor that senses light; and a switching transistor connected to the light-sensing transistor in series and configured to output data. During a standby time, a low voltage is applied to the switching transistor and a high voltage is applied to the light-sensitive oxide semiconductor transistor, and when data is output, the high voltage is applied to the switching transistor and the low voltage is applied to the light-sensitive oxide semiconductor transistor. | 11-24-2011 |
20110286275 | Stacked Memory Devices And Method Of Manufacturing The Same - A stacked memory device may include at least one memory unit and at least one peripheral circuit unit arranged either above or below the at least one memory unit. The at least one memory unit may include a memory string array, a plurality of bit lines, and a plurality of string selection pads. The memory string may include a plurality of memory strings arranged in a matrix and each of the memory strings may include a plurality of memory cells and a string selection device arranged perpendicular to a substrate. The plurality of bit lines may extend in a first direction and may be connected to ends of the plurality of memory strings. The plurality of string selection pads may be arrayed in a single line along the first direction and may be connected to the string selection devices included in the plurality of memory strings. | 11-24-2011 |
20120085999 | Transistors, Methods Of Manufacturing The Same, And Electronic Devices Including Transistors - Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times. | 04-12-2012 |
20120139876 | Light Sensing Circuit, Method Of Manufacturing The Same, And Optical Touch Panel Including The Light Sensing Circuit - A light sensing circuit using an oxide semiconductor transistor, a method of manufacturing the light sensing circuit, and an optical touch panel including the light sensing circuit. Because the light sensing circuit includes only one light sensor transistor and one switch transistor formed on the same substrate, a structure of the light sensing circuit is simplified. Furthermore, because the light sensor transistor and the switch transistor have the same structure, a method of manufacturing the light sensing circuit is also simplified. Also, since an optical touch panel or an image acquisition apparatus using the light sensing circuit uses the light sensing circuit having a simple structure and does not use a capacitor, the optical touch panel or the image acquisition apparatus may be made thinner and larger. | 06-07-2012 |
20150054793 | OPTICAL TOUCH SCREEN APPARATUSES AND METHODS OF DRIVING THE OPTICAL TOUCH SCREEN APPARATUSES - An optical touch screen apparatus in which an oxide semiconductor transistor is used as a light sensing device, and a method of driving the optical touch screen apparatus. The optical touch screen apparatus includes an array including a plurality of light sensing pixels for sensing incident light, a gate driver for providing each of the light sensing pixels with a gate voltage and a reset signal and a signal output unit for receiving a light sensing signal from each of the plurality of light sensing pixels to output a data signal. The gate driver includes a plurality of gate lines that provide a gate voltage to each of the light sensing pixels and at least one reset line that provides a reset signal to each of the light sensing pixels and is electrically connected to the plurality of light sensing pixels. | 02-26-2015 |
Patent application number | Description | Published |
20080217677 | Non-volatile semiconductor memory device with alternative metal gate material - A non-volatile semiconductor memory device comprises a substrate including a source region, a drain region and a channel region provided between the source region and the drain region with a gate stack located above the channel region with a metal gate located above the gate stack. The metal gate is comprised of a metal having a specific metal work function relative to a composition of a layer of the gate stack that causes electrons to travel through the entire thickness of the blocking layer via direct tunneling. The gate stack preferably comprises a multiple layer stack selected from a group of multiple layer stacks consisting of: ONO, ONH, OHH, OHO, HHH, or HNH, where O is an oxide material, N is SiN, and H is a high κ material. | 09-11-2008 |
20080261366 | NON-VOLATILE MEMORY DEVICE HAVING IMPROVED ERASE EFFICIENCY AND METHOD OF MANUFACTURING THE SAME - A non-volatile memory device having an improved erase efficiency and a method of manufacturing the same are provided. The method includes: forming a stack structure of a tunnel dielectric layer, a charge trapping layer, a charge blocking layer and a gate on a semiconductor substrate; and performing a post treatment of the gate using an oxygen or CF | 10-23-2008 |
20090119777 | METHOD AND SYSTEM OF DETERMINING VULNERABILITY OF WEB APPLICATION - A method of determining vulnerability of web application comprises: selecting fixed parameters from parameters of URL link extracted from a website; determining whether a process of determining vulnerability for the selected fixed parameter is completed or not; inserting an attack pattern for each attack type to an input value for the selected fixed parameter, when the process of determining vulnerability for the selected fixed parameter is not completed; and determining vulnerability of the selected fixed parameter by each attack type through an analysis of response to an input of URL link with the attack pattern inserted thereinto. | 05-07-2009 |
20090259839 | SECURITY AUTHENTICATION SYSTEM AND METHOD - Authentication system and method are provided. The authentication system includes: a server configured to provide at least two security levels and configured to transmit one of at least two security modules corresponding to the security level of a user terminal, via communications network, to the user terminal based, at least in part, upon an environment of the user terminal; and an authentication server communicatively linked with the server and configured to perform a user authentication in response to a user authentication request from the user terminal. Accordingly, various hackings can be prevented and the user authentication can be accomplished with user's convenience and security. | 10-15-2009 |
20120170794 | SLIM-TYPE SPEAKER AND METHOD OF ASSEMBLING THE SAME - A speaker includes a frame, a diaphragm disposed in a top end of the frame of the speaker and a bobbin disposed below the diaphragm A voice coil is wound around a bottom end of the bobbin and a magnetic member having a groove in which the bottom end of the bobbin around which the voice coil is wound, is inserted and reciprocated in a straight line upward and downward A central pillar is fixed to the magnetic member at a center of the bobbin and extends parallel to the movement of the bobbin. A damper supports an inner circumferential surface of the bobbin from the central pillar. The damper additionally supports an outer circumferential surface of the bobbin, from the frame, so as to allow the bobbin to reciprocate in a straight line. Support of the bobbin by the damper in both lengthwise and width directions results in minimization of wobble and distortion, so that accurate sound is generated by the speaker. | 07-05-2012 |
20120267513 | Light-Sensing Apparatus And Method Of Driving The Same - According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels, a first gate driver, and a signal output unit. Each of the light-sensing pixels may include a light sensor transistor configured to sense light, a switch transistor configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal. | 10-25-2012 |
20120274608 | SIMPLIFIED LIGHT SENSING CIRCUIT, LIGHT SENSING APPARATUS INCLUDING THE LIGHT SENSING CIRCUIT, METHOD OF DRIVING THE LIGHT SENSING APPARATUS, AND IMAGE ACQUISITION APPARATUS AND OPTICAL TOUCH SCREEN APPARATUS INCLUDING THE LIGHT SENSING APPARATUS - In a simplified light sensing circuit, a light sensing apparatus including the light sensing circuit, a method of driving the light sensing apparatus, and an image acquisition apparatus and optical touch screen apparatus including the light sensing apparatus, the light sensing circuit includes an oxide semiconductor transistor including a channel layer including an oxide semiconductor material, for each pixel. The oxide semiconductor transistor is configured to operate as a light sensing device that senses light and a switch that outputs light sensing data. | 11-01-2012 |
20120280939 | Optical Touch Screen Apparatuses And Methods Of Driving The Optical Touch Screen Apparatuses - An optical touch screen apparatus in which an oxide semiconductor transistor is used as a light sensing device, and a method of driving the optical touch screen apparatus. The optical touch screen apparatus includes an array including a plurality of light sensing pixels for sensing incident light, a gate driver for providing each of the light sensing pixels with a gate voltage and a reset signal and a signal output unit for receiving a light sensing signal from each of the plurality of light sensing pixels to output a data signal. The gate driver includes a plurality of gate lines that provide a gate voltage to each of the light sensing pixels and at least one reset line that provides a reset signal to each of the light sensing pixels and is electrically connected to the plurality of light sensing pixels. | 11-08-2012 |
20120327032 | LIGHT-SENSING APPARATUSES, METHODS OF DRIVING THE LIGHT-SENSING APPARATUSES, AND OPTICAL TOUCH SCREEN APPARATUSES INCLUDING THE LIGHT-SENSING APPARATUSES - Light-sensing apparatuses may include a light sensor transistor and a switching transistor in a light-sensing pixel, the transistors being oxide semiconductor transistors. In the light-sensing apparatus, the light sensor transistor and the switching transistor in the light-sensing pixel may be adjacently formed on one substrate, the switching transistor including a channel material that is relatively less light-sensitive than the light sensor transistor and is stable, and the light sensor transistor includes a channel material that is relatively light-sensitive. The light sensor transistor may include a transparent upper electrode on a surface of a channel, and a negative voltage may be applied to the transparent upper electrode, whereby a threshold voltage shift in a negative voltage direction may be prevented or reduced. | 12-27-2012 |
20130009145 | Transistor, Electronic Device Including Transistor, And Manufacturing Methods Thereof - A transistor may include an active layer having a plurality of oxide semiconductor layers and an insulating layer disposed therebetween. The insulating layer may include a material that has higher etch selectivity with respect to at least one of the plurality of oxide semiconductor layers. The electronic device may include a first transistor and a second transistor connected to the first transistor. The second transistor may include an active layer having a different structure from that of the active layer included in the first transistor. The active layer of the second transistor may have the same structure as one of the plurality of oxide semiconductor layers constituting the active layer of the first transistor. | 01-10-2013 |
20130026558 | SEMICONDUCTOR DEVICES INCLUDING VARIABLE RESISTANCE MATERIAL AND METHODS OF FABRICATING THE SAME - The semiconductor device includes an insulating substrate, a channel layer over the insulating substrate, a gate at least partially extending from an upper surface of the channel layer into the channel layer, a source and a drain respectively at opposing sides of the gate on the channel layer, a gate insulating layer surrounding, the gate and electrically insulating the gate from the channel layer, the source, and the drain, and a variable resistance material layer between the insulating substrate and the gate. | 01-31-2013 |
20130027326 | LIGHT-SENSING APPARATUSES, METHODS OF DRIVING THE LIGHT-SENSING APPARATUSES, AND OPTICAL TOUCH SCREEN APPARATUSES INCLUDING THE LIGHT-SENSING APPARATUSES - A light-sensing apparatus in which a light sensor transistor in a light-sensing pixel is formed of an oxide semiconductor transistor for sensing light, a method of driving the light-sensing apparatus, and an optical touch screen apparatus including the light-sensing apparatus. The light-sensing apparatus includes a light-sensing pixel array having a plurality of light-sensing pixels arranged in rows and columns, and a plurality of gate lines which are arranged in a row direction and respectively provide a gate voltage to the light-sensing pixel. Each of the light-sensing pixels includes a light sensor transistor for sensing light and a switch transistor for outputting a light-sensing signal from the light sensor transistor, and gates of the light sensor transistors of the light-sensing pixels arranged in an arbitrary row are connected to a gate line arranged in a row previous or next to the arbitrary row. | 01-31-2013 |
20130050148 | TOUCH SENSING AND REMOTE SENSING OPTICAL TOUCH SCREEN APPARATUSES - Optical touch screen apparatuses with remote sensing and touch sensing by using a light sensor transistor including an oxide semiconductor transistor. The optical touch screen apparatus includes a pixel array of a plurality of sensing pixels arranged in a plurality of rows and a plurality of columns. Each of the sensing pixels includes a light sensing pixel for sensing light that is irradiated by an external light source and a touch sensing pixel for sensing display light that is reflected by a screen touch. The light sensing pixel includes a first light sensor transistor and a first switch transistor connected each other in series, and the touch sensing pixel includes a second light sensor transistor and a second switch transistor connected each other in series. | 02-28-2013 |
20130062602 | Oxide Semiconductor Transistors And Methods Of Manufacturing The Same - Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions. | 03-14-2013 |
20130063400 | LIGHT-SENSING APPARATUS, METHOD OF DRIVING THE LIGHT-SENSING APPARATUS, AND OPTICAL TOUCH SCREEN APPARATUS INCLUDING THE LIGHT-SENSING APPARATUS - In one embodiment, a light-sensing apparatus includes a light-sensing pixel array that has a plurality of light-sensing pixels arranged in rows and columns; and a gate driver configured to provide the light-sensing pixels with a gate voltage and a reset signal that have inverted phases. Each of the light-sensing pixels includes a light sensor transistor configured to sense light and a switch transistor configured to output a light-sensing signal from the light-sensor transistor. The gate driver includes a plurality of gate lines connected to gates of the switch transistors, a plurality of reset lines connected to gates of the light sensor transistors, and a plurality of phase inverters each connected between a corresponding reset line and a gate line. Thus, when a gate voltage is applied to one of the plurality of gate lines, a reset signal with an inversed phase to the gate voltage may be applied to a corresponding reset line. | 03-14-2013 |
20130088460 | OPTICAL TOUCH SCREEN APPARATUS AND METHOD OF MANUFACTURING THE OPTICAL TOUCH SCREEN APPARATUS - An optical touch screen apparatus that includes a display pixel including a display cell and a driving transistor, the display cell configured to display an image and the driving transistor configured to turn on or off the display cell, the driving transistor having a double gate structure; and a light-sensing pixel including a light-sensing transistor and a switch transistor, the light-sensing transistor configured to sense incident light and the switch transistor configured to output data from the light-sensing transistor, the switch transistor having the double gate structure, wherein the double gate structure is a structure in which a bottom gate and a top gate are arranged such that a channel layer is disposed therebetween. The top gate may be formed together when forming a transparent electrode in the pixel, and thus even when the top gate is further included, the number of manufacturing processes is not increased. | 04-11-2013 |
20130168770 | HIGH-VOLTAGE OXIDE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A high-voltage oxide transistor includes a substrate; a channel layer disposed on the substrate; a gate electrode disposed on the substrate to correspond to the channel layer; a source contacting a first side of the channel layer; and a drain contacting a second side of the channel layer, wherein the channel layer includes a plurality of oxide layers, and none of the plurality of oxide layers include silicon. The gate electrode may be disposed on or under the channel layer. Otherwise, the gate electrodes may be disposed respectively on and under the channel layer. | 07-04-2013 |
20130208204 | THIN FILM TRANSISTOR AND DISPLAY PANEL EMPLOYING THE SAME - A thin film transistor is provided. The transistor includes a gate; a first passivation layer covering the gate; a channel layer disposed on the first passivation layer; a source and a drain that are disposed on the first passivation layer and contact two sides of the channel layer; a second passivation layer covering the channel layer, the source, and the drain; first and second transparent electrode layers that are disposed on the second passivation layer and spaced apart from each other; a first transparent conductive via that penetrates the second passivation layer and connects the source and the first transparent electrode layer; and a second transparent conductive via that penetrates the second passivation layer and connects the drain and the second transparent electrode layer. A cross-sectional area of the gate is larger than a cross-sectional area of the channel layer, the source, and the drain combined. | 08-15-2013 |
20130241881 | PHOTOSENSING TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND DISPLAY PANELS EMPLOYING A PHOTOSENSING TRANSISTOR - Photosensing transistors, display panels employing a photosensing transistor, and methods of manufacturing the same, include a gate layer, a gate insulation layer on the gate layer, a channel layer on the gate insulation layer, an etch stop layer on a partial area of the channel layer, a source and a drain on the channel layer and separated from each other with the etch stop layer being interposed between the source and the drain, and a passivation layer covering the source, the drain, and the etch stop layer, wherein the source is separated from the etch stop layer. | 09-19-2013 |
20140060210 | PRESSURE SENSOR AND PRESSURE SENSING METHOD - A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value. | 03-06-2014 |
20140085267 | HYBRID TOUCH PANEL, HYBRID TOUCH SCREEN APPARATUS, AND METHOD OF DRIVING THE HYBRID TOUCH PANEL - A touch panel includes a sensing unit having a first sub sensing unit configured to output a first sensing current in response to a voltage of a first gate line and configured to reset in response to a voltage of a second gate line the first sensing current corresponding to a first touch type, and a second sub sensing unit configured to output a second sensing current in response to a voltage of a third gate line and configured to reset in response to a voltage of a fourth gate line, the second sensing current corresponding to a second touch type which is different than the first touch type, a display unit configured to generate an image voltage corresponding to image data to be displayed, in response to at least one of the voltages of the first to fourth gate lines and liquid crystal. | 03-27-2014 |
20140087138 | 3-DIMENSIONAL NANOPLASMONIC STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A three-dimensional (3D) nanoplasmonic structure includes a substrate; a plurality of nanorods formed on the substrate; and a plurality of metal nanoparticles formed on surfaces of the substrate and the plurality of nanorods. A method of manufacturing a 3D nanoplasmonic structure includes preparing a substrate; growing a plurality of nanorods on the substrate; forming a metal layer on surfaces of the plurality of nanorods; and dewetting the metal layer into particles by heat-treating the metal layer | 03-27-2014 |
20140111063 | TEXTILE-BASED STRETCHABLE ENERGY GENERATOR - A textile-based stretchable energy generator is provided. The energy generator includes: flexible and stretchable first and second electrode substrates; and an energy generation layer, which is provided between the first and second electrode substrates and includes a dielectric elastomer for generating electrical energy from a transformation thereof. | 04-24-2014 |
20140118201 | STRETCHABLE ANTENNA AND MANUFACTURING METHOD OF THE SAME - Provided is a stretchable antenna including an elastic body that is stretchable and a conductive material disposed on the elastic body. The stretchable antenna may maintain stable characteristics in spite of numerous deformations. The stretchable antenna may be used as an antenna for a wireless communication device formed on a human body or clothing. | 05-01-2014 |
20140150572 | TACTILE SENSOR - A tactile sensor includes a first substrate including a plurality of first electrodes, a second substrate including a plurality of second electrodes corresponding to the plurality of first electrodes, and a dielectric substance disposed between the first substrate and the second substrate, wherein a second electrode corresponding to any one of the first electrodes is offset in one direction with respect to the any one of the first electrodes while a second electrode corresponding to another first electrode neighboring the any one of the first electrodes is offset in another direction. | 06-05-2014 |
20140151623 | RESISTIVE RANDOM ACCESS MEMORY DEVICES FORMED ON FIBER AND METHODS OF MANUFACTURING THE SAME - Provided is a memory device formed on a fiber. The memory device includes a lower electrode, a memory resistance layer, and an upper electrode, which are sequentially formed on a surface of the fiber. The memory resistance layer may have variable resistance properties. The memory device may further include an intermediate electrode and a switching layer formed between the memory resistance layer and the upper electrode. | 06-05-2014 |
20140239357 | THIN FILM TRANSISTOR ON FIBER AND MANUFACTURING METHOD OF THE SAME - Provided is a thin film transistor on fiber and a method of manufacturing the same. The thin film transistor includes a fiber; a first electrode, a second electrode and a gate electrode formed on fiber; a channel formed between the first and second electrodes; an encapsulant encapsulating the fiber, the first, second, and gate electrodes, and an upper surface of the channel; and a gate insulating layer formed in a portion of the inner area of the encapsulant. | 08-28-2014 |