Patent application number | Description | Published |
20120061561 | APPARATUS AND METHOD FOR ELEMENTAL ANALYSIS OF PARTICLES BY MASS SPECTROMETRY - An apparatus for elemental analysis of particles such as single cells or single beads by mass spectrometry is described. The apparatus includes means for particle introduction; means to vaporize, atomize and ionize elements associated with a particle; means to separate the ions according to their mass-to-charge ratio; means to detect the separated ions, means to digitize the output of the means to detect the ions; means to transfer and/or to process and/or record the data output of the means to digitize, having means to detect the presence of a particle in a mass spectrometer; and means to synchronize one of the means for ion detection, data digitization, transfer, processing and recording with the means to detect the presence of a particle. Methods and computer readable code implementing aspects of the apparatus, and for reducing the rates of data generation, digitization, transfer, processing and recording are also described. | 03-15-2012 |
20130268211 | APPARATUS AND METHOD FOR ELEMENTAL ANALYSIS OF PARTICLES BY MASS SPECTROMETRY - An apparatus for elemental analysis of particles such as single cells or single beads by mass spectrometry is described. The apparatus includes means for particle introduction; means to vaporize, atomize and ionize elements associated with a particle; means to separate the ions according to their mass-to-charge ratio; means to detect the separated ions, means to digitize the output of the means to detect the ions; means to transfer and/or to process and/or record the data output of the means to digitize, having means to detect the presence of a particle in a mass spectrometer; and means to synchronize one of the means for ion detection, data digitization, transfer, processing and recording with the means to detect the presence of a particle. Methods and computer readable code implementing aspects of the apparatus, and for reducing the rates of data generation, digitization, transfer, processing and recording are also described. | 10-10-2013 |
20140299763 | APPARATUS FOR ELEMENTAL ANALYSIS OF PARTICLES BY MASS SPECTROMETRY - A mass spectrometer has a particle introduction system and a vaporizer, atomizer, and ionizer configured to produce ions from elements associated with the particle. An ion mass-to-charge ratio analyzer is configured to separate ions according to their mass-to-charge ratio. A detector is positioned to detect at least some of the separated ions. A digital processor is configured to: (a) acquire data from the detector including at least first data in a primary detection group defined to comprise one or more mass-to-charge ratio channels of the mass spectrometer; (b) determine whether or not ions detected during at least one sampling cycle meet at least one selection criterion indicating a presence of a particle in the mass spectrometer; and (c) determine whether or not to use data in a secondary detection group based on whether or not the at least one selection criterion is met. | 10-09-2014 |
20160027629 | APPARATUS FOR ELEMENTAL ANALYSIS OF PARTICLES BY MASS SPECTROMETRY - A mass spectrometer has a particle introduction system and a vaporizer, atomizer, and ionizer configured to produce ions from elements associated with the particle. An ion mass-to-charge ratio analyzer is configured to separate ions according to their mass-to-charge ratio. A detector is positioned to detect at least some of the separated ions. A digital processor is configured to: (a) acquire data from the detector including at least first data in a primary detection group defined to comprise one or more mass-to-charge ratio channels of the mass spectrometer; (b) determine whether or not ions detected during at least one sampling cycle meet at least one selection criterion indicating a presence of a particle in the mass spectrometer; and (c) determine whether or not to use data in a secondary detection group based on whether or not the at least one selection criterion is met. | 01-28-2016 |
Patent application number | Description | Published |
20090257170 | Method for Forming a Ruthenium Film - Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided. | 10-15-2009 |
20090303657 | CRYSTALLOGRAPHICALLY ORIENTATED TANTALUM PENTOXIDE AND METHODS OF MAKING SAME - Methods of forming an oxide are disclosed and include contacting a ruthenium-containing material with a tantalum-containing precursor and contacting the ruthenium-containing material with a vapor that includes water and optionally molecular hydrogen (H | 12-10-2009 |
20100258903 | STRONTIUM RUTHENIUM OXIDE INTERFACE - Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source. | 10-14-2010 |
20100302705 | Capacitors, And Methods Of Forming Capacitors - Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component. | 12-02-2010 |
20110000875 | Methods Of Forming Capacitors - A method of forming a capacitor includes depositing a dielectric metal oxide layer of a first phase to a thickness no greater than 75 Angstroms over an inner conductive capacitor electrode material. The first phase dielectric metal oxide layer has a k of at least 15. Conductive RuO | 01-06-2011 |
20110210423 | INTEGRATED CIRCUIT DEVICES HAVING A STRONTIUM RUTHENIUM OXIDE INTERFACE - Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source. | 09-01-2011 |
20110279979 | Constructions Comprising Rutile-Type Titanium Oxide; And Methods Of Forming And Utilizing Rutile-Type Titanium Oxide - Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks. | 11-17-2011 |
20120100283 | Methods of Forming Capacitors - Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component. | 04-26-2012 |
20120161282 | Method for Forming a Ruthenium Film - Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided. | 06-28-2012 |
20120199944 | CAPACITORS INCLUDING A RUTILE TITANIUM DIOXIDE MATERIAL, SEMICONDUCTOR DEVICES INCORPORATING SAME AND RELATED METHODS - Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material. Capacitors, semiconductor devices and methods of forming a semiconductor device including the capacitors are also disclosed. | 08-09-2012 |
20120202356 | METHODS OF FORMING RUTILE TITANIUM DIOXIDE AND ASSOCIATED METHODS OF FORMING SEMICONDUCTOR STRUCTURES - Methods of forming rutile titanium dioxide. The method comprises exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to oxygen gas (O | 08-09-2012 |
20120225268 | INSULATIVE ELEMENTS AND METHODS OF FORMING THE SAME - Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described. | 09-06-2012 |
20120241865 | INTEGRATED CIRCUIT STRUCTURE - One aspect of the present invention provides an integrated circuit structure including a semiconductor substrate, a bottom dielectric layer positioned on the substrate, at least two capping dielectric layers positioned on the bottom dielectric layer, and a metal layer positioned on the at least two capping dielectric layers, wherein one of the two capping dielectric layers is an aluminum oxide layer, and the other is a silicon oxide layer. Another aspect of the present invention provides an integrated circuit structure including a bottom electrode, a bottom dielectric layer positioned on the bottom electrode, at least two capping dielectric layers positioned on the bottom dielectric layer, and a top electrode positioned on the at least two capping dielectric layers, wherein one of the two capping dielectric layers is an aluminum oxide layer, and the other is a silicon oxide layer. | 09-27-2012 |
20120267757 | CAPACITOR STRUCTURE WITH METAL BILAYER AND METHOD FOR USING THE SAME - A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal. | 10-25-2012 |
20130182367 | METHOD FOR FORMING RUTILE TITANIUM OXIDE AND THE STACKING STRUCTURE THEREOF - A method for forming a stacking structure, including forming a ruthenium oxide layer over a substrate; forming a praseodymium oxide layer over the ruthenium oxide layer; and forming a titanium oxide layer over the praseodymium oxide layer; wherein the titanium oxide layer has a rutile phase with the existence of the praseodymium oxide layer underneath. The oxide layers are deposited by a plurality of atomic layer deposition cycles using ruthenium precursor, praseodymium precursor, titanium precursor, and ozone. | 07-18-2013 |
20130260529 | METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A RUTILE TITANIUM DIOXIDE MATERIAL - Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material. | 10-03-2013 |
20130307120 | METHODS OF FORMING A RUTHENIUM MATERIAL, METHODS OF FORMING A CAPACITOR, AND RELATED ELECTRONIC SYSTEMS - Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided. | 11-21-2013 |
20140065301 | METHODS OF FORMING RUTILE TITANIUM DIOXIDE - Methods of forming rutile titanium dioxide comprise exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to an atmosphere consisting of oxygen gas (O | 03-06-2014 |
20140210049 | METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A RUTILE TITANIUM DIOXIDE MATERIAL - Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material. | 07-31-2014 |
20140349461 | METHOD FOR USING METAL BILAYER - A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal. | 11-27-2014 |
20150093874 | METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A RUTILE TITANIUM DIOXIDE MATERIAL - Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material. | 04-02-2015 |
20150102460 | SEMICONDUCTOR STRUCTURES INCLUDING MOLYBDENUM NITRIDE, MOLYBDENUM OXYNITRIDE OR MOLYBDENUM-BASED ALLOY MATERIAL, AND METHOD OF MAKING SUCH STRUCTURES - A semiconductor structure may include a first electrode over a substrate, a high-K dielectric material over the first electrode, and a second electrode over the high-K dielectric material, wherein at least one of the first electrode and the second electrode may include a material selected from the group consisting of a molybdenum nitride (Mo | 04-16-2015 |
20150140773 | METHODS OF FORMING INSULATIVE ELEMENTS - Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described. | 05-21-2015 |
Patent application number | Description | Published |
20130316153 | Constructions Comprising Rutile-Type Titanium Oxide; And Methods of Forming and Utilizing Rutile-Type Titanium Oxide - Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks. | 11-28-2013 |
20140015097 | Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors - Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions. | 01-16-2014 |
20150054127 | Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors - Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions. | 02-26-2015 |
20150194478 | Capacitors and Methods of Forming Capacitors - A method of forming a capacitor includes forming an elevationally elongated and elevationally inner capacitor electrode that comprises different composition laterally-outermost and laterally-innermost conductive portions that have different respective intrinsic residual mechanical stress. The innermost conductive portion is formed to have greater mechanical stress in the compressive direction than the outermost conductive portion. A capacitor dielectric is formed over the inner capacitor electrode and an elevationally outer capacitor electrode is formed over the capacitor dielectric. A capacitor construction independent of the method formed is disclosed. | 07-09-2015 |
20160027642 | Methods of Forming Capacitors - A method of forming a capacitor includes depositing a dielectric metal oxide layer of a first phase to a thickness no greater than 75 Angstroms over an inner conductive capacitor electrode material. The first phase dielectric metal oxide layer has a k of at least 15. Conductive RuO | 01-28-2016 |
20160056038 | Constructions Comprising Rutile-Type Titanium Oxide; And Methods of Forming And Utilizing Rutile-Type Titanium Oxide - Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks. | 02-25-2016 |