Shimane, JP
Atsushi Shimane, Koshigaya-Shi JP
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20130088607 | Anti-vibration Actuator and Lens Unit and Camera Furnished with Same - The present invention is an anti-vibration actuator ( | 04-11-2013 |
20130182326 | Lens Barrel For Zoom Lens System - The lens barrel assembly suitable for a zoom lens comprises a pedestal barrel member secured to a mount member; a fixed barrel member secured in position closer to an object to the pedestal barrel member and having longitudinal grooves defined therein; a focus cam barrel member, a focus interlocking plate, and a first cam barrel member, each disposed inside the fixed barrel member; a second cam barrel member disposed inside any of the focus cam barrel member, the focus interlocking plate, and the first cam barrel member; a third cam barrel member disposed outside the fixed barrel member; an automatic focusing unit secured to an outer surface of the pedestal barrel member; and an anti-vibration unit disposed inside the pedestal barrel member and at least partially or completely overlapping the automatic focusing unit when the lens barrel assembly takes the position at the wide-angle end. | 07-18-2013 |
Atsushi Shimane, Saitama-Shi JP
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20080198480 | Inner focusing zoom lens barrel - The present invention is directed to an inner focusing zoom lens barrel provided with cams of a well-balanced configuration for smooth zooming and/or focusing operations, which attains sufficient performances at the minimum object distance, which is capable of inhibiting a focal length from varying throughout the entire zoom range, and which has a reduced outer diameter. The inner focusing zoom lens barrel has a fixed barrel, first and second cam barrels, a linear-shuttle barrel, a focusing cam barrel, a zooming relay barrel, and a 1st-lens-group sliding barrel, characterized in that the first cam barrel, the linear-shuttle barrel, and the focusing cam barrel are superposed one over another in this sequence inside the fixed barrel while the zooming relay barrel, the second cam barrel, and the 1st-lens-group sliding barrel are superposed one over another in this sequence outside the fixed barrel. The first cam barrel is formed with 3rd- and 4th-lens-group guiding cams, the linear-shuttle barrel is formed with 2nd-lens-group guiding cams, the zooming relay barrel is formed with 1st-cam-barrel guiding cams, the second cam barrel is formed with 1st-lens-group guiding cams, and the focusing cam barrel is formed with 2nd-lens-group focusing/guiding grooves and 2nd-lens-group guiding grooves. | 08-21-2008 |
20110090579 | IMAGING LENS WITH A LENS POSITION ADJUSTING MECHANISM - An imaging lens for adjusting a position of an adjusting lens to be carried out easily and which has an improved impact resistance. The imaging lens includes a lens frame for supporting a lens serving as an adjusting lens and a support frame for supporting the lens frame. A contact section for support frame adjustment operable to come into contact with the lens frame is arranged in the support frame. A contact section for lens frame adjustment operable to come into contact with the support frame is arranged in the lens frame. The lens frame is configured such that the fastening force generated between the lens frame and the support frame can be applied vertical with respect to the contact section for support frame adjustment in a state of the contact section for lens frame adjustment held in contact with the contact section for support frame adjustment. | 04-21-2011 |
Hiroaki Shimane, Tokyo JP
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20150118458 | ANTIMONY-DOPED TIN OXIDE, INFRARED-RAY-ABSORBABLE PIGMENT, INFRARED-RAY-ABSORBABLE INK, PRINTED MATTER, AND METHOD FOR PRODUCING ANTIMONY-DOPED TIN OXIDE - An antimony-doped tin oxide which comprises tin oxide and antimony oxide and fulfills the following requirement (a) and/or (b): (a) the half-width value (Δ2θ) around 2θ=27° as determined by an X-ray diffraction measurement is 0.35 or less; and/or (b) the content of antimony oxide is 0.5 to 10.0 wt % relative to the weight of the antimony-doped tin oxide and the crystallinity, which is a value determined by dividing a peak value of a peak appearing around 2θ=27° as determined by an X-ray diffraction measurement by the half-width (Δ2θ), is 18092 or more. | 04-30-2015 |
Hiroyuki Shimane, Saitama JP
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20130094175 | DISPLAY DEVICE - A display device includes a first light guide member provided with a first reflecting surface formed at its first end to reflect light emitted by a light source; a second light guide member provided with a penetrating hole in which the first light guide member is intended to be inserted and a second reflecting surface formed at its first end to reflect the light; a first pointer and a second pointer fixed to the first end of the first light guide member and the first end of the second light guide member to be illuminated by the light reflected by the first reflection surface and the second reflection surface, respectively, and a driving member configured to separately rotate the first light guide member and the second light guide member around a same rotation axis with the first pointer and the second pointer, respectively. | 04-18-2013 |
Nobuaki Shimane, Tokyo JP
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20100284723 | WRITING IMPLEMENT - A writing implement. A tubular outer shell ( | 11-11-2010 |
Nobuyoshi Shimane, Tokyo JP
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20130316441 | GENETIC ANALYZER - A nucleic acid analysis apparatus capable of selecting an optimal analysis method for every user and improving throughput is provided. In a genetic analyzer for measuring and analyzing amplification reaction of a nucleic acid in real time, an amplification curve is analyzed and a user can select conditions for terminating the amplification reaction upon detection of amplification. Further, a user can select conditions for selecting next processing after termination of the amplification reaction. A user can select, in situ, conditions for terminating the amplification reaction and conditions for selecting next processing upon detection of amplification and after the termination of amplification reaction. Alternatively, conditions for terminating the amplification reaction and conditions for selecting the next processing are registered previously and processing is performed automatically upon detection of amplification and after termination of the amplification reaction. | 11-28-2013 |
Takanori Shimane, Hitachinaka JP
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20090060785 | AUTOMATIC MULTI-PURPOSE ANALYZER - An automatic multi-purpose analyzer having a plurality of analysis units connected in series through a transfer line for transferring a sample, each analysis unit including a pipetting mechanism for pipetting the sample, wherein each of the analysis units includes a transmission mechanism for transmitting information about the amount of sample, obtained upon sample pipetting by the pipetting mechanism of each analysis unit, to other analysis units and wherein failure caused by incorrect surface detection is resolved. The automatic multi-purpose analyzer performs qualitative and quantitative analysis of biological samples such as blood, and urine, etc. | 03-05-2009 |
Takeshi Shimane, Chiba-Ken JP
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20110233680 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile memory device including MOS transistors formed in a surface of one semiconductor substrate is provided. The device includes a first and second MOS transistors. The first MOS transistor includes a first source and drain regions spaced from each other, a first gate insulating film provided on the surface, a first gate electrode provided on the first gate insulating film, and a first channel region located immediately below the first gate insulating film and containing impurities of both conductivity types. The second MOS transistor includes a second source and drain regions spaced from each other, a second gate insulating film provided on the surface, a second gate electrode provided on the second gate insulating film, and a second channel region located immediately below the second gate insulating film and having an identical concentration profile of the impurity to the first channel region. | 09-29-2011 |
Takeshi Shimane, Matsudo-Shi JP
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20090161427 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A non-volatile semiconductor storage device includes: a memory cell array having memory cells arranged therein, the memory cells storing data in a non-volatile manner; and a plurality of transfer transistors transferring a voltage to the memory cells, the voltage to be supplied for data read, write and erase operations with respect to the memory cells. Each of the transfer transistors includes: a gate electrode formed on a semiconductor substrate via a gate insulation film; and diffusion layers formed to sandwich the gate electrode therebetween and functioning as drain/source layers. Upper layer wirings are provided above the diffusion layers and provided with a predetermined voltage to prevent depletion of the diffusion layers at least when the transfer transistors become conductive. | 06-25-2009 |
20090256190 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to an aspect of the present invention, there is provided a semiconductor device including: a semiconductor substrate; active areas with island-like shapes formed on the semiconductor substrate; an element isolation area surrounding the active areas and including an element isolation groove formed on the semiconductor substrate and an element isolation film embedded into the element isolation groove; gate insulating films each formed on corresponding one of the active areas and having a first end portion that overhangs from the corresponding active area onto the element isolation area at one side and a second end portion that overhangs from the corresponding active area onto the element isolation area at the other side, wherein an overhang of the first end portion has a different length from a length of an overhang of the second end portion. | 10-15-2009 |
20100322009 | SEMICONDUCTOR MEMORY DEVICE INCLUDING CHARGE ACCUMULATION LAYER - According to one embodiment, a semiconductor memory device includes a semiconductor substrate, memory cells without a source region and a drain region, and a first insulating film. The memory cells are arranged adjacent to one another on the semiconductor substrate and include a first gate electrode including a charge accumulation layer. A current path functioning as a source region or a drain region of a selected memory cell is formed in the semiconductor substrate when a voltage is applied to the first gate electrode of one of unselected memory cells. The first insulating film is formed on the semiconductor substrate to fill a region between the first gate electrodes of the memory cells adjacent to each other. | 12-23-2010 |
20100329026 | SEMICONDUCTOR MEMORY DEVICE WITH CHARGE ACCUMULATION LAYER - According to one embodiment, a semiconductor memory device includes memory cells, first and second selection transistors, a source line, a temperature monitor, and a source line voltage controller. The memory cells are connected in series between a source of the first selection transistor and a drain of the second selection transistor. The temperature monitor monitors a temperature of the semiconductor substrate. The source line voltage controller applies a voltage to the source line, in a read operation, in such a manner that a potential difference between the source line and the semiconductor substrate increases according to a rise in the temperature monitored by the temperature monitor and that a reverse bias is applied between the source of the second selection transistor and the semiconductor substrate. | 12-30-2010 |
Yoshichika Shimane, Toyota-Shi JP
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20130000443 | VEHICLE DIFFERENTIAL DEVICE - A vehicle differential device having a differential case rotatably supported via a bearing by a housing and a drive shaft inserted into the differential case, including an oil sump member on the opposite side of the differential case to the bearing, the oil sump member including an insert hole into which the drive shaft is inserted, and an oil supply channel formed higher than the drive shaft in the vertical direction, wherein at least a portion of the insert hole is formed with a gap between the insertion hole and the drive shaft wider than that on the vertically lower side of the rotational axis of the drive shaft, the oil sump member includes a discharge hole allowing oil to flow out toward the differential case if an oil level of an oil chamber formed between the oil sump member and an oil seal exceeds a predetermined height. | 01-03-2013 |
Yoshifumi Shimane, Machida JP
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20130051065 | ILLUMINATION UNIT AND DISPLAY APPARATUS USING THE SAME - An illumination unit includes an LED and a tabular light guide plate having a light emitting surface for emitting light from the LED as planar light, wherein a recessed portion is formed in the opposite surface of the tight emitting surface of the light guide plate, and wherein the LED is provided in the recessed portion so that the optical axis of the LED becomes parallel to the light emitting surface of the light guide plate. Further, a plurality of LEDs are arranged along the longer direction of the recessed portion, a dimming pattern is provided at a location corresponding to each of a plurality of LED of the light emitting surface of the light guide plate, and the shape or the size of the dimming pattern is varied with a location on the light emitting surface of the light guide plate. | 02-28-2013 |
Yoshimitsu Shimane, Hachioji-Shi JP
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20120152736 | REACTIVE SPUTTERING APPARATUS - A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering. | 06-21-2012 |
20150206714 | REACTIVE SPUTTERING APPARATUS - A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering. | 07-23-2015 |
Yoshimitsu Shimane, Tokyo JP
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20150294845 | SUBSTRATE PROCESSING APPARATUS - An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction. | 10-15-2015 |
Yoshimitsu Shimane, Kawasaki-Shi JP
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20150318466 | OXIDATION PROCESS APPARATUS, OXIDATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - An oxidation process apparatus according to one embodiment of the present invention includes: a substrate holder provided in a processing chamber and having a substrate holding surface; a gas introduction unit for introducing an oxygen gas; a cylindrical member; and a substrate holder drive unit for changing relative positions of the substrate holder and the cylindrical member to allow the substrate holding surface and the cylindrical member to form an oxidation process space. The cylindrical member is provided so as to form a gap between the cylindrical member and the substrate holder during formation of the space. The oxygen gas is introduced restrictively into the space. The oxygen gas introduced from the gas introduction unit is evacuated through the gap. | 11-05-2015 |
Yoshimitu Shimane, Tokyo JP
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20110051115 | Substrate Holding Apparatus, Mask Alignment Method, and Vacuum Processing Apparatus - The present invention provides a mask alignment mechanism which reduces the occurrence of particles and which aligns a mask with high accuracy, and a vacuum processing apparatus including such a mask alignment mechanism. A mask alignment mechanism according to one embodiment of the present invention includes a substrate holder which is movable up and down when a substrate is transferred and on which four taper pins are formed, and a mask in which grooves are formed. The taper pins can be inserted into the grooves, respectively. The taper pins include a pair of long taper pins and a pair of short taper pins. The taper pins in each pair are disposed to face each other across the substrate. Tapered surfaces formed in the long taper pins and tapered surfaces formed in the short taper pins are located at different heights. | 03-03-2011 |
Yukio Shimane, Chiba JP
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20090090914 | SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING THE SAME, AND THIN FILM TRANSISTOR - A transparent semiconductor thin film | 04-09-2009 |
20090250668 | AMORPHOUS TRANSPARENT CONDUCTIVE FILM, TARGET AND PRODUCTION METHOD FOR AMORPHOUS CONDUCTIVE FILM - An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B. | 10-08-2009 |
20090308635 | SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM, AND TRANSPARENT ELECTRODE FOR TOUCH PANEL - A sputtering target which is composed of a sintered body of an oxide containing indium, tin and zinc as main components; the atomic ratio of In/(In+Sn+Zn) being 0.10 to 0.35; the atomic ratio of Sn/(In+Sn+Zn) being 0.15 to 0.35; and the atomic ratio of Zn/(In+Sn+Zn) being 0.50 to 0.70; and containing a hexagonal layered compound shown by In | 12-17-2009 |
20130221348 | SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING THE SAME, AND THIN FILM TRANSISTOR - A transparent semiconductor thin film | 08-29-2013 |
Yuta Shimane, Tokyo JP
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20150323703 | RETARDATION FILM, POLARIZING PLATE AND LIQUID CRYSTAL DISPLAY - To provide a retardation film that, while maintaining a high retardation value, has increased durability such as moist heat resistance and can prevent the occurrence of color unevenness even if made in a size having a large area. The retardation film contains a cellulose ester as the primary component, has a film thickness of 15 μm or more and less than 40 μm, has a film thickness variation both in the widthwise direction and lengthwise direction of 0 to 4 μm, and satisfies an Rt humidity fluctuation represented by the formula (1) described below of 1% to 12%. | 11-12-2015 |