Patent application number | Description | Published |
20090191338 | Film-Deposition Apparatus and Film-Deposition Method - A film-deposition apparatus and a film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method are provided. The film-deposition apparatus for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition apparatus comprises: a process vessel capable of being evacuated; a table on which the object to be processed can be placed, the table being disposed in the process vessel; and a source-gas supply part connected to the process vessel, the source-gas supply part being configured to supply, into the process vessel, a source gas including an organic metal material containing manganese or a metal complex material containing manganese. The film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition method comprises the steps of: placing an object to be processed in an inside of a process vessel capable of being evacuated; and forming a manganese film on a surface of the object to be processed in the process vessel by the CVD method with the use of a source gas including an organic metal material containing manganese or a metal complex material containing manganese. | 07-30-2009 |
20110049718 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, ELECTRONIC INSTRUMENT, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM - When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess. | 03-03-2011 |
20110139272 | PROCESS-GAS SUPPLY AND PROCESSING SYSTEM - A process-gas supply system | 06-16-2011 |
20110237066 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM - The present invention is a method of manufacturing a semiconductor device comprising: forming a recess in an interlayer insulating film formed on a substrate surface, the recess being configured to be embedded with an upper conductive channel mainly made of copper to be electrically connected to a lower conductive channel; supplying a gas containing an organic compound of manganese, and forming a barrier layer made of a compound of manganese for preventing diffusion of copper to the interlayer insulating film, such that the barrier layer covers an exposed surface of the interlayer insulating film; after the formation of the barrier layer, supplying organic acid to the barrier layer in order to increase a ratio of manganese in the compound of manganese forming the barrier layer; after the supply of the organic acid, forming a seed layer mainly made of copper on a surface of the barrier layer; after the formation of the seed-layer, heating the substrate in order to separate out manganese from on the surface of the barrier layer or from in the barrier layer onto a surface of the seed layer; supplying a cleaning liquid to the seed layer in order to remove the manganese separated out on the surface of the seed layer by the heating; and after the supply of the cleaning liquid, forming the upper conductive channel mainly made of copper in the recess. | 09-29-2011 |
Patent application number | Description | Published |
20080248595 | Method for Manufacturing Semiconductor Device and Computer Storage Medium - A method for fabricating a semiconductor device includes the steps of forming a PbTiOx film having a predominantly (111) orientation on a lower electrode as a nucleation layer by an MOCVD process with a film thickness exceeding 2 nm, and forming a PZT film having a predominantly (111) orientation on the nucleation layer, wherein the step of forming the PbTiOx film is conducted under an oxygen partial pressure of less than 340 Pa. | 10-09-2008 |
20090215205 | SHOWER HEAD STRUCTURE FOR PROCESSING SEMICONDUCTOR - A shower head structure disposed in a device | 08-27-2009 |
20100233876 | FILM FORMING APPARATUS, FILM FORMING METHOD, COMPUTER PROGRAM AND STORAGE MEDIUM - In a film forming method, a substrate is first loaded into a vacuum-evacuable processing chamber. At least a transition metal-containing source gas and a reduction gas are supplied into the processing chamber, and the substrate is heated. Then, a thin film is formed in a recess in the surface of the substrate by heat treatment. Accordingly, the surface recess of the substrate can be filled with a copper film. | 09-16-2010 |
20110020544 | EXHAUST SYSTEM STRUCTURE OF FILM FORMATION APPARATUS, FILM FORMATION APPARATUS, AND EXHAUST GAS PROCESSING METHOD - An exhaust system structure of a film formation apparatus includes an exhaust line ( | 01-27-2011 |
20130136859 | FILM FORMING METHOD AND PROCESSING SYSTEM - A film forming method performs a film forming process on a target object having on a surface thereof an insulating layer. The film forming method includes a first thin film forming step of forming a first thin film containing a first metal, an oxidation step of forming an oxide film by oxidizing the first thin film, and a second thin film forming step of forming a second thin film containing a second metal on the oxide film. | 05-30-2013 |
Patent application number | Description | Published |
20100210097 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - Provided is a manufacturing method of a semiconductor device including a gate insulating film which can be formed into a thin film and of which film composition is easy to be controlled. The manufacturing method includes: forming a manganese oxide film for serving as a gate insulating film on a semiconductor substrate, on which a transistor is formed; forming a conductive film for serving as a gate electrode on the manganese oxide film; and forming a gate electrode and a gate insulating film by processing the conductive film and the manganese oxide film. | 08-19-2010 |
20100233865 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming an oxide film or an oxynitride film on a conductor for serving as one electrode of a capacitor; forming, on the oxide film or the oxynitride film, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor. | 09-16-2010 |
20100323512 | METAL OXIDE FILM FORMATION METHOD AND APPARATUS - [Problems] There is provided a metal oxide film forming method capable of controlling a film thickness of a metal oxide even if the metal oxide is subject to a self-limited thickness. | 12-23-2010 |
20120122289 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming, on a conductor for serving as one electrode of a capacitor, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor. | 05-17-2012 |
Patent application number | Description | Published |
20100096083 | SHOWER HEAD STRUCTURE AND TREATING DEVICE - A shower head structure characterized by comprising a shower head section, opposed to the upper surface of a mounting table in an evacuable treating vessel, for injecting a processing gas into the treating vessel; a temperature observation through-hole which opens in the lower surface of the shower head so as to be opposed to the upper surface of the mounting table, a transparent observation window which hermetically seals the upper end of the temperature observation through-hole, a radiation thermometer disposed on the upper surface of the transparent observation window, an adhesion preventive gas supply path communicating with the temperature observation through-hole to prevent a film from adhering to the transparent observation window, wherein the adhesion preventive gas supply path communicates with the temperature observation through-hole through an injection nozzle for injecting the adhesion preventive gas to the transparent observation window. | 04-22-2010 |
20100112806 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR MANUFACTURING APPARATUS AND STORAGE MEDIUM - A seed layer is formed on a surface of an insulating film and along a recess of the insulating film, and after a copper wiring is buried in the recess, a barrier film is formed, and an excessive metal is removed from the wiring. On a surface of a copper lower layer conductive path exposed at the bottom of the recess, a natural oxide of the copper is reduced or removed. On a substrate from which the natural oxide is reduced or removed, the seed layer, composed of a self-forming barrier metal having oxidative tendency higher than that of copper or an alloy of such metal and copper, is formed. The substrate is heated after burying copper in the recess. Thus, a barrier layer is formed by oxidizing the self-forming barrier metal. An excessive portion of the self-forming barrier metal is deposited on a surface of the buried copper. | 05-06-2010 |
20100140802 | FILM FORMING METHOD AND FILM FORMING APPARATUS - On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated. | 06-10-2010 |
20100219157 | FILM FORMING APPARATUS AND FILM FORMING METHOD - A film forming apparatus | 09-02-2010 |
20110163451 | FILM FORMING METHOD AND PROCESSING SYSTEM - Provided is a film-forming method for performing a film-forming process on a surface of a target substrate to be processed in an evacuable processing chamber, a recessed portion being formed on the surface of the target substrate. The method includes a transition metal-containing film processing process in which a transition metal-containing film is formed by a heat treatment by using a source gas containing a transition metal; and a metal film forming process in which a metal film containing an element of the group VIII of the periodic table is formed. | 07-07-2011 |
20120025380 | MANGANESE OXIDE FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C. | 02-02-2012 |
20120135612 | FILM FORMING METHOD, PRETREATMENT DEVICE, AND PROCESSING SYSTEM - A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant. | 05-31-2012 |
20120219724 | METHOD FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING MANGANESE OXIDE FILM, AND COMPUTER-READABLE STORAGE MEDIUM - In a method for forming a metal oxide film, by which excellent adhesion between the film and Cu can be provided, a gas containing an organometallic compound is supplied to a base, and the metal oxide film is formed on the base. After forming the metal oxide film on the base by supplying the organometallic compound to the base, the metal oxide film is exposed to the oxygen-containing gas or oxygen-containing plasma in the final step of the process of forming the metal oxide film. | 08-30-2012 |
20120251721 | DEVICE AND METHOD FOR FORMING FILM - The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber. | 10-04-2012 |
20140103529 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND STORAGE MEDIUM - In order to obtain a semiconductor device having an embedded electrode with low cost and high reliability, a semiconductor device manufacturing method includes forming a first film made of a metal oxide within an opening which is formed in an insulating film formed on a surface of a substrate; performing a hydrogen radical treatment by irradiating atomic hydrogen to the first film; forming a second film made of a metal within the opening after the performing of the hydrogen radical treatment; and forming an electrode made of a metal within the opening after the forming of the second film. | 04-17-2014 |
20140361436 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, STORAGE MEDIUM AND SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes forming a second conductive layer on an underlying layer which has an insulating layer in which a recess is formed and a first conductive layer exposed on a bottom surface of the recess; forming a third conductive layer on the second conductive layer; supplying, into the third conductive layer, a material solid-soluble in the third conductive layer; and heating the third conductive layer into which the solid-soluble material is supplied. | 12-11-2014 |
20140374904 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR MANUFACTURING APPARATUS - The present disclosure provides a semiconductor device, including: an insulation layer and a wiring line layer, the wiring line layer including a wiring line having a line width and a line height, at least one of which is 15 nm or less, and containing Ni or Co as a main component thereof. In another embodiment, there is provided a semiconductor device manufacturing method for manufacturing a semiconductor device including an insulation layer and a wiring line layer, including: forming the wiring line layer on the insulation layer, the wiring line layer including a wiring line having a line width and a line height, at least one of which is 15 nm or less, and containing Ni or Co as a main component thereof. | 12-25-2014 |
20150021775 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND APPARATUS FOR PRODUCING SEMICONDUCTOR - A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, includes: forming an oxide layer including mainly an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer including mainly a silicate of the metal element by making the oxide layer into silicate by annealing under a reducing atmosphere. | 01-22-2015 |
20150110975 | METHOD FOR FORMING MANGANESE-CONTAINING FILM - A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film. | 04-23-2015 |
20150126027 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes: forming an insulating film on a substrate where a first conductive film is formed; forming a recess in the insulating film such that the first conductive film is exposed in a portion of the recess; forming a metal oxide film to cover the insulating film and the first conductive film after forming a recess; performing a hydrogen radical treatment of irradiating the substrate with atomic hydrogen after forming a metal oxide film; and forming a second conductive film in the recess. | 05-07-2015 |
Patent application number | Description | Published |
20120045619 | SUBSTRATE PROVIDED WITH OPTICAL STRUCTURE AND OPTICAL ELEMENT USING THE SAME - The present invention provides a substrate provided with an optical structure which can correctly transfer the jagged shape of a mold and guarantee a lens surface that has favorable quality, and provides an optical element which uses such a substrate. A manufacturing method of a substrate, provided with an optical structure, includes applying a curing resin onto the substrate, which has a recessed portion, pressing a mold, having a jagged shape, from an upper portion of the curing resin toward the substrate, and forming an optical structure having the jagged shape by curing the curing resin. The recessed portion is provided to cover the lower portion of the region on which the jagged shape is arranged, so as to retain uncured resin of the curing resin when the mold is pressed toward the substrate. An optical element includes a substrate that is manufactured using the above-described manufacturing method. | 02-23-2012 |
20120314180 | POLARIZATION CONVERSION ELEMENT - A polarization conversion element includes a phase reversal element and a polarization plane rotation element including a liquid crystal layer. The liquid crystal layer has a plurality of regions disposed along circumferential direction with the intersection point of the polarization lane rotation element and the optical axis as the center with alignment directions different from each other. When electric voltage in accordance with the wavelength of linear polarization incident on the polarization plane rotation element is applied, each region rotates the polarization plane of the polarization component transmitted by each region, and thereby converts linear polarization to radial polarization. The phase reversal element reverses, among the first and the second annular portions alternately disposed along the radial direction with the optical axis as the center, the phase of light incident on the first annular portion relative to the phase of light incident on the second annular portion. | 12-13-2012 |
20130342768 | LIGHT MODULATOR ELEMENT AND MICROSCOPE APPARATUSA INCLUDING LIGHT MODULATION ELEMENT - A light modulator element includes a liquid crystal element which has a liquid crystal layer containing liquid crystal molecules aligned along a first direction, and two transparent electrodes disposed in opposition to each other with the liquid crystal layer sandwiched therebetween, and which controls the phase of linear polarization light and passing through said liquid crystal layer by applying an electric voltage between said two transparent electrodes; a polarizer plate which is disposed between a light source and said liquid crystal element and which has the transmission axis along the first direction or along a direction orthogonal to said first direction; and a rotation mechanism which supports the liquid crystal element and the polarizer plate and which rotates the liquid crystal element and the polarizer plate integrally in one unit with the optical axis of the liquid crystal element as the rotation axis. | 12-26-2013 |
20140204592 | LENS MEMBER AND LIGHT-EMITTING DEVICE USING SAME - A lens member includes a light-incident side; a light-exit side that is opposite to the light-incident side, a Fresnel lens arranged on a center axis that passes through a center of the light-incident side, and a diffraction grating structure arranged around a periphery of the Fresnel lens and having a center through which the center axis passes. Also, it is disclosed that the Fresnel lens may include a first Fresnel lens and a second Fresnel lens, the first Fresnel lens includes annular prisms that are divided from a convex lens and having a center through which the center axis of the light-incident side passes, and the second Fresnel lens includes annular prisms that are divided from a TIR lens and arranged around the periphery of the first Fresnel lens, centering around the center axis of the light-incident side. | 07-24-2014 |
20150116812 | ABERRATION CORRECTION DEVICE AND LASER MICROSCOPE - An aberration correction device ( | 04-30-2015 |
20150293337 | ABERRATION CORRECTION OPTICAL UNIT AND LASER MICROSCOPE - An aberration correction optical unit ( | 10-15-2015 |
Patent application number | Description | Published |
20120145899 | SCANNING ELECTRON MICROSCOPE - A seal member to be contacted with an observation object is provided at an open end of a lens barrel so that the observation object can be attracted to the lens barrel via the seal member and fixed in direct and close contact with the lens barrel when a vacuum is created in the lens barrel by a vacuum pump. In other words, instead of providing a sample chamber, the observation object is fixed in close contact with the lens barrel to prevent relative movement therebetween by a suction force even without a sample chamber. In this configuration, the interior of the lens barrel can be maintained in a vacuum state despite the absence of a sample chamber and no adverse effect occurs during observation because the lens barrel and the observation object are not moved relative to each other by vibration. | 06-14-2012 |
20140362380 | INTEGRATING SPHERE - In an integrating sphere including a structure having a spherical inner wall that forms a spherical space, there are provided an LED circuit board equipped at one end with a light-emitting device adapted to radiate a light in the space at an input port formed at the structure to be diffuse-reflected on the spherical inner wall and equipped at other end with a heat sink, a measuring port formed at the structure to pass the light diffuse-reflected on the spherical inner wall on a measuring object, an output port formed at the structure to output a reflected light of the diffuse-reflected light passing the measuring port and reflected on the measuring object outside, and a detector adapted to be detachably connected to the output port to receive the outputted reflected light. | 12-11-2014 |
20150233696 | DISTANCE SENSOR AND MEASUREMENT METHOD - The present invention provides a capacitive distance sensor. The sensor includes a first guard electrode, a conductor, a second guard electrode, and insulators. The conductor includes a sensor electrode and a lead portion and is arranged on a side of a measurement target with respect to the first guard electrode. The second guard electrode is arranged on the side of the measurement target with respect to the conductor. The first guard electrode includes portions overlapping the sensor electrode and the lead portion. The second guard electrode includes a portion overlapping the lead portion and does not overlap the sensor electrode. | 08-20-2015 |
Patent application number | Description | Published |
20130037202 | ELECTRONIC EYEGLASS AND LIQUID CRYSTAL LENS PRODUCTION METHODS - An object of the present invention is to provide electronic eyeglass and liquid crystal lens production methods that eliminate the need for forming a liquid crystal injection path in the liquid crystal lens, while making provisions so as to be able to sufficiently maintain a prescribed gap between substrates. The electronic eyeglass and liquid crystal lens production methods includes the steps of placing a sealing agent so as to form a closed planar region on at least one of first and second transparent substrates, dropping a liquid crystal material into an inside space enclosed by the sealing agent, bonding the other of the transparent substrates onto the one transparent substrate on which the liquid crystal material has been dripped, and filling a resin into a space created outside the sealing agent. | 02-14-2013 |
20130107186 | PRE-EDGING LENS AND METHOD FOR MANUFACTURING EDGED LENS | 05-02-2013 |
20150104820 | METHOD FOR PRODUCTION OF EOSINOPHIL FROM PLURIPOTENT STEM CELL - The present invention relates to a method for producing human eosinophils from human pluripotent stem cells. More specifically, the present invention provides a method for producing human eosinophils from human pluripotent stem cells, which method comprises the steps of: (1) co-culturing, in the presence of VEGF, human pluripotent stem cells with cells separated from the AGM region of a mammalian fetus; (2) performing suspension culture using a medium comprising IL-3, IL-6, Flt3 ligand, SCF, TPO and serum; (3) performing suspension culture using a medium comprising IL-3, SCF, GM-CSF and serum; and, optionally, (4) performing suspension culture using a medium comprising IL-3, IL-5 and serum. | 04-16-2015 |
Patent application number | Description | Published |
20140084466 | MANGANESE SILICATE FILM FORMING METHOD, PROCESSING SYSTEM, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - According to an embodiment of present disclosure a manganese silicate film forming method for forming a manganese silicate film by transforming metal manganese to silicate. The method includes forming a metal manganese film on a silicon-containing base by using a manganese compound gas; annealing the metal manganese film in an oxidizing atmosphere after the formation of the metal manganese film; and forming a manganese silicate film by annealing the metal manganese film in a reducing atmosphere after the annealing of the metal manganese film in the oxidizing atmosphere. | 03-27-2014 |
20140183742 | MANGANESE-CONTAINING FILM FORMING METHOD, PROCESSING SYSTEM, ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE - A manganese-containing film forming method for forming a manganese-containing film on an underlying layer containing silicon and oxygen includes: degassing the underlying layer formed on a processing target by thermally treating the processing target, the underlying layer containing silicon and oxygen; and forming a manganese metal film on the degassed underlying layer by chemical deposition using a gas containing a manganese compound. Forming a manganese metal film includes: setting a film formation temperature to be higher than a degassing temperature; introducing a reducing reaction gas; and forming a manganese-containing film including an interfacial layer formed in an interface with the underlying layer and a manganese metal film formed on the interfacial layer, the interfacial layer being made up of a film of at least one of a manganese silicate and a manganese oxide. | 07-03-2014 |
20140183743 | MANGANESE METAL FILM FORMING METHOD, PROCESSING SYSTEM, ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE - A manganese metal film forming method includes: degassing an underlying layer formed on a processing target by thermally treating the processing target, the underlying layer containing silicon and oxygen; and forming a manganese metal film on the degassed underlying layer by chemical deposition using a gas containing a manganese compound. Forming a manganese metal film includes introducing a gas containing an oxidizing agent to form a partially-oxidized manganese metal film. | 07-03-2014 |
20140190409 | DEVICE AND METHOD FOR FORMING FILM - The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber. | 07-10-2014 |
20140363971 | MANGANESE OXIDE FILM FORMING METHOD - A manganese oxide film as a barrier film is formed on a structure in which a lower copper wiring layer is formed on a substrate, a silicon-containing oxide film as an interlayer film is formed on the lower copper wiring layer, and a recess is formed in the silicon-containing oxide film to reach the lower copper wiring layer. Further, this manganese oxide film is formed by an ALD process, and is controlled to have a thickness by adjusting the repetition number of times such that the manganese oxide film has a predetermined barrier property on the silicon-containing oxide film and copper buried in the recess has a preset resistance value on the exposed lower copper wiring layer. | 12-11-2014 |
20150262872 | METHOD OF FORMING COPPER WIRING - A method of forming a copper wiring buried in a recess portion of a predetermined pattern formed in an interlayer insulation layer of a substrate is disclosed. The method includes: forming a manganese oxide film at least on a surface of the recess portion, the manganese oxide film serving as a self-aligned barrier film through reaction with the interlayer insulation layer; performing hydrogen radical treatment with respect to a surface of the manganese oxide film; placing a metal more active than ruthenium on the surface of the manganese oxide film after the hydrogen radical treatment; forming a ruthenium film on the surface where the metal more active than ruthenium is present; and forming a copper film on the ruthenium film by physical vapor deposition (PVD) to bury the copper film in the recess portion. | 09-17-2015 |
20150270166 | Method of Fabricating Semiconductor Device Including A Substrate Having Copper Interconnects - A method of fabricating a semiconductor device including a substrate having a copper interconnect exposed on a surface of an insulation film, wherein a layer of an anti-corrosion agent composed of organic material is formed on the surface of the copper interconnect. The method includes removing the layer of the anti-corrosion agent by heating the substrate; and forming a thin layer including manganese oxide on the surface of the copper interconnect by supplying a gas containing an organic compound of manganese to the substrate. | 09-24-2015 |