Patent application number | Description | Published |
20110006424 | Method of manufacturing semiconductor device - A method of manufacturing a semiconductor device includes forming a plurality of dummy line patterns arranged at a first pitch on an underlying region, forming first mask patterns having predetermined mask portions formed on long sides of the dummy line patterns, each of the first mask patterns having a closed-loop shape and surrounding each of the dummy line patterns, removing the dummy line patterns, forming a second mask pattern having a first pattern portion which covers end portions of the first mask patterns and inter-end portions each located between adjacent ones of the end portions, etching the underlying region using the first mask patterns and the second mask pattern as a mask to form trenches each located between adjacent ones of the predetermined mask portions, and filling the trenches with a predetermined material. | 01-13-2011 |
20120292764 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a plurality of dummy line patterns arranged at a first pitch on an underlying region, forming first mask patterns having predetermined mask portions formed on long sides of the dummy line patterns, each of the first mask patterns having a closed-loop shape and surrounding each of the dummy line patterns, removing the dummy line patterns, forming a second mask pattern having a first pattern portion which covers end portions of the first mask patterns and inter-end portions each located between adjacent ones of the end portions, etching the underlying region using the first mask patterns and the second mask pattern as a mask to form trenches each located between adjacent ones of the predetermined mask portions, and filling the trenches with a predetermined material. | 11-22-2012 |
Patent application number | Description | Published |
20090134432 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device comprises a semiconductor substrate; a cell array block formed on the semiconductor substrate and including plural stacked cell array layers each with a plurality of first lines, a plurality of second lines crossing the plurality of first lines, and memory cells connected at intersections of the first and second lines between both lines; and a plurality of via-holes extending in the stacked direction of the cell array layers to individually connect the first or second line in the each cell array layer to the semiconductor substrate. The via-holes are formed continuously through the plural cell array layers, and multiple via-holes having equal lower end positions and upper end positions are connected to the first or second lines indifferent cell array layers. | 05-28-2009 |
20090212352 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity. | 08-27-2009 |
20090251940 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE USING A VARIABLE RESISTANCE FILM AND METHOD OF MANUFACTURING THE SAME - A plurality of bit lines s arranged crossing a plurality of first word lines. A first diode is arranged at each cross point of the first word lines and the bit lines. A cathode of the first diode is connected to one of the first word lines. A first variable resistance film configuring the first diode is provided between the anodes of the first diodes and the bit lines, and configures a first memory cell together with each of the first diodes, and further, is used in common to the first diodes. | 10-08-2009 |
20100038616 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND PRODUCING METHOD THEREOF - A cell array includes a memory cell region in which memory cells are formed and a peripheral region that is provided around the memory cell region. In the memory cell region, first lines are extended in parallel with a first direction, and the first lines are repeatedly formed at first intervals in a second direction orthogonal to the first direction. In the peripheral region, each of the first lines located at (4n−3)-th (n is a positive integer) and (4n−2)-th positions in the second direction from a predetermined position has a contact connecting portion on one end side in the first direction of the first line. In the peripheral region, each of the first lines located at (4n−1)-th and 4n-th positions in the second direction from the predetermined position has the contact connecting portion on the other end side in the first direction of the first line. The contact connecting portion is formed so as to contact a contact plug extended in a laminating direction. | 02-18-2010 |
20110147822 | Semiconductor memory device and method for manufacturing the same - A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity. | 06-23-2011 |
20120205612 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device comprises a semiconductor substrate; a cell array block formed on the semiconductor substrate and including plural stacked cell array layers each with a plurality of first lines, a plurality of second lines crossing the plurality of first lines, and memory cells connected at intersections of the first and second lines between both lines; and a plurality of via-holes extending in the stacked direction of the cell array layers to individually connect the first or second line in the each cell array layer to the semiconductor substrate. The via-holes are formed continuously through the plural cell array layers, and multiple via-holes having equal lower end positions and upper end positions are connected to the first or second lines in different cell array layers. | 08-16-2012 |
Patent application number | Description | Published |
20130230417 | HIGH-PRESSURE PUMP - A high-pressure pump has an elastic member arranged in a damper chamber between a first diaphragm and a second diaphragm. The elastic member is always in contact with both diaphragms while the high-pressure pump is operated. When the diaphragms are further vibrated due to a resonance under a situation where a frequency of the pressure pulsation of low-pressure fuel is in agreement with the characteristic frequency of the diaphragms, the elastic member restricts the deformation of the diaphragms. Therefore, the resonance of the first diaphragm and the second diaphragm can be restricted. | 09-05-2013 |
20140123960 | FUEL INJECTION CONTROLLER AND FUEL INJECTION SYSTEM - A fuel injection controller is applied to a fuel injector injecting fuel to be combusted in an internal combustion engine by an open-valve operation of the valve body according to an electromagnetic suction force generated by an energization of a coil. The fuel injection controller controls an injection state of the fuel injector by controlling a coil current flowing through the coil. The fuel injection controller includes an increasing control portion which increases the coil current to a first target value, a holding control portion which holds the coil current increased by the increasing control portion to the first target value, and a changing portion which changes the first target value according to the operation state of the internal combustion engine. | 05-08-2014 |
20140137841 | FUEL INJECTOR - A fuel injector includes a body having a fuel injection port, and a seal ring on the body. The body has a diameter-shrink portion of which an outer diameter is shrunk. The seal ring is engaged with the diameter-shrink portion. The diameter-shrink portion has a radially concaved annular groove with which a tip end portion of the seal ring is engaged. It is restricted that the seal ring is rubbed against an inner surface of the assembling hole and the seal ring is damaged. | 05-22-2014 |
20150260182 | PULSATION DAMPER - A high-pressure pump has an elastic member arranged in a damper chamber between a first diaphragm and a second diaphragm. The elastic member is always in contact with both diaphragms while the high-pressure pump is operated. When the diaphragms are further vibrated due to a resonance under a situation where a frequency of the pressure pulsation of low-pressure fuel is in agreement with the characteristic frequency of the diaphragms, the elastic member restricts the deformation of the diaphragms. Therefore, the resonance of the first diaphragm and the second diaphragm can be restricted. | 09-17-2015 |