Furushima
Hidetoshi Furushima, Kumamoto JP
Patent application number | Description | Published |
---|---|---|
20090204189 | Living-Tissue Normalization Method - A living-tissue normalization method and therapeutic device. The method includes intermittently flowing a slight direct current through a living body or living tissue at predetermined regular intervals to thereby activate a normalization mechanism of said living body or living tissue through the intermediary of protein. The therapeutic device includes a resistance provided between a pair of electrodes and current control arranged so that electrically conductive layers of a pair of pad elements are intermittently supplied with a slight direct current at predetermined regular intervals, and so that the pair of electrodes are supplied with a direct current. | 08-13-2009 |
20110152981 | Living-tissue normalization method - A living-tissue normalization method and therapeutic device. The method includes intermittently flowing a slight direct current through a living body or living tissue at predetermined regular intervals to thereby activate a normalization mechanism of said living body or living tissue through the intermediary of protein. The therapeutic device includes a resistance provided between a pair of electrodes and current control arranged so that electrically conductive layers of a pair of pad elements are intermittently supplied with a slight direct current at predetermined regular intervals, and so that the pair of electrodes are supplied with a direct current. | 06-23-2011 |
Hiromitsu Furushima, Kawasaki JP
Patent application number | Description | Published |
---|---|---|
20140123509 | SHAPE MEASURING INSTRUMENT, IMPEDANCE DETECTOR, AND IMPEDANCE DETECTION METHOD - A coordinate measuring device includes a probe detecting a shape of a measured object and outputting a signal indicating results of the shape detection. A probe interface receives the signal indicating the results of the shape detection. A cable transmits the signal indicating the results of the shape detection between the probe and the probe interface and bends accompanying displacement of the probe. The probe interface includes an impedance detector having a calculator detecting impedance in the cable. The impedance detector transmits high-speed test data to the probe through the cable and detects impedance in the cable according to whether a reception confirmation signal output by the probe is received. | 05-08-2014 |
Hiroyuki Furushima, Chiyoda-Ku, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20160004239 | SYSTEM DEVELOPMENT DEVICE, SYSTEM DEVELOPMENT METHOD, AND SYSTEM DEVELOPMENT PROGRAM - A system development device includes a storage unit that stores therein an object information list, in which an entry is registered for each constituent element that constitutes a single control system, where the entry includes an object type of a constituent element, includes connection information, and includes setting information; a system-configuration displaying and editing unit that generates a workspace display screen for each object information list, where the workspace display screen connects and displays, a display object according to the object type of each entry registered in the object information list; and a dividing unit that, when the system-configuration displaying and editing unit receives a dividing command designating any second system included in a first system, duplicates an entry of the second system that is registered in a first object information list of the first system and that generates a second object information list. | 01-07-2016 |
Hiroyuki Furushima, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20160004239 | SYSTEM DEVELOPMENT DEVICE, SYSTEM DEVELOPMENT METHOD, AND SYSTEM DEVELOPMENT PROGRAM - A system development device includes a storage unit that stores therein an object information list, in which an entry is registered for each constituent element that constitutes a single control system, where the entry includes an object type of a constituent element, includes connection information, and includes setting information; a system-configuration displaying and editing unit that generates a workspace display screen for each object information list, where the workspace display screen connects and displays, a display object according to the object type of each entry registered in the object information list; and a dividing unit that, when the system-configuration displaying and editing unit receives a dividing command designating any second system included in a first system, duplicates an entry of the second system that is registered in a first object information list of the first system and that generates a second object information list. | 01-07-2016 |
Kiyoshi Furushima, Fukuoka-Ken JP
Patent application number | Description | Published |
---|---|---|
20080226936 | Centrifugally Cast External Layer for Rolling Roll and Method for Manufacture Thereof - A method for producing an outer layer for a roll having a structure having MC carbide dispersed at an area ratio of 20-60%, comprising the steps of (1) centrifugally casting a melt having a composition comprising, by mass, 2.2-6.0% of C, 0.1-3.5% of Si, 0.1-3.5% of Mn, and 8-22% of V, the balance being Fe and inevitable impurity elements, to produce a cylindrical body comprising an inner layer having concentration MC carbide, an MC-carbide-poor outer layer, and a concentration gradient layer between the inner layer and the outer layer, in which the area ratio of MC carbide changes, and (2) cutting the cylindrical body to a depth at which the area ratio of MC carbide is 20% or more. | 09-18-2008 |
20090092852 | CENTRIFUGALLY CAST COMPOSIT ROLL - A centrifugally cast composite roll comprising an outer layer having a composition comprising by mass 2.5-9% of C, 0.1-3.5% of Si, 0.1-3.5% of Mn, and 11-40% of V, the balance being Fe and inevitable impurities; an intermediate layer made of a high-speed steel alloy, which is formed inside the outer layer; and an inner layer made of cast iron or steel, which is formed inside the intermediate layer. | 04-09-2009 |
Yuji Furushima, Miyagi JP
Patent application number | Description | Published |
---|---|---|
20120205680 | SEMICONDUCTOR LIGHT EMITTING DEVICE, OPTICAL PICKUP UNIT AND INFORMATION RECORDING/REPRODUCTION APPARATUS - A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes. | 08-16-2012 |
20150255958 | GROUP III NITRIDE SEMICONDUCTOR DEVICE, P-TYPE CONTACT STRUCTURE, AND METHOD FOR FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A Group III nitride semiconductor device comprises: a Group III nitride semiconductor layer having a primary surface, inclined with respect to a c-plane of the Group III nitride semiconductor at an angle in a range of 50 degrees or more and 80 degrees or less, of a Group III nitride semiconductor; a p-type Group III nitride semiconductor laminate including first to third p-type Group III nitride semiconductor layers, the first to third p-type Group III nitride semiconductor layers being provided on the primary surface of the Group III nitride semiconductor layer, the first and third p-type Group III nitride semiconductor layers sandwiching the second p-type Group III nitride semiconductor layer such that the second p-type Group III nitride semiconductor layer incorporates strain; and an electrode provided on the p-type Group III nitride semiconductor laminate. The electrode is in contact with the first p-type Group III nitride semiconductor layer. | 09-10-2015 |