Patent application number | Description | Published |
20090127669 | METHOD FOR FORMING INTERLAYER DIELECTRIC FILM, INTERLAYER DIELECTRIC FILM, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS - A method for forming an interlayer dielectric film by a plasma CVD method, including turning off a radio frequency power and purging with an inert gas simultaneously. | 05-21-2009 |
20090246538 | METHOD OF FORMING A POROUS INSULATION FILM - A method of forming a porous insulation film uses an organic silica material gas having a 3-membered SiO cyclic structure and a 4-membered SiO cyclic structure, or an organic silica material gas having a 3-membered SiO cyclic structure and a straight-chain organic silica structure, and uses a plasma reaction in the filming process. A porous interlevel dielectric film having a higher strength and a higher adhesive property can be obtained. | 10-01-2009 |
20090267198 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR - The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film. | 10-29-2009 |
20090278178 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Disclosed is a semiconductor device which includes a MIS FET on a surface of a substrate, an insulating film on the substrate to cover the MIS FET, an opening that gets to an impurity diffusing region formed in the insulating film, another opening that gets to a gate electrode or to an extension part of the gate electrode formed in the insulating film, and an electrically conductive member including mainly copper filled in each of the openings. The insulating film includes a layer including, as main components, silicon, oxygen, carbon and hydrogen (FIG. | 11-12-2009 |
20100025852 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To suppress deterioration in reliability of wiring and to reduce effective dielectric constant of wiring. In a semiconductor device, copper-containing wirings are covered by barrier insulating films, and the barrier insulating films contain a component of an organic silica containing unsaturated hydrocarbon and amorphous carbon. The copper-containing wirings are covered by the barrier insulating films that contain a component that is in an organic silica structure containing unsaturated hydrocarbon and amorphous carbon. Accordingly, inter-wiring capacitance is reduced without deteriorating reliability of the copper-containing wiring, thereby realizing a high-speed LSI with low power consumption. | 02-04-2010 |
20100248031 | Anode for secondary battery and secondary battery using the same - A secondary battery includes an anode for a secondary battery, a cathode which absorbs and discharges lithium ions, and an electrolyte which is placed between the anode for the secondary battery and the cathode. The anode for the secondary battery includes an anode active material layer which absorbs and discharges lithium ions, the anode active material layer including a first layer including carbon as a chief ingredient, and a second layer including at least one first element having a theoretical capacity greater than a theoretical capacity of graphite, and at least one second element which has a theoretical capacity equal to or less than the theoretical capacity of graphite. The second layer includes particles, and the particles include the first element and the second element. | 09-30-2010 |
20120013023 | SEMICONDUCTOR DEVICE - The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film. | 01-19-2012 |
Patent application number | Description | Published |
20110171775 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film. | 07-14-2011 |
20110183526 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - Characteristics of a low-k insulating film grown on a substrate is modulated in the thickness-wise direction, by varying the ratio of high-frequency input and low-frequency input used for inducing plasma in the course of forming the film, to thereby improve the adhesion strength while keeping the dielectric constant at a low level, wherein the high-frequency input and the low-frequency input for inducing plasma are applied from a single electrode, while elevating the level of low-frequency input at least either at the start of formation or at the end of formation of the insulating film, as compared with the input level in the residual time zone, thereby the insulating film is formed to have a close-adhesion layer in at least either one of the end portions of the film in the thickness-wise direction, by the contribution of both of the high-frequency input and the low-frequency input, and to have a low-k insulating film in the residual portion of the film, by lowering or zeroing the level of the low-frequency input. | 07-28-2011 |
20110201212 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - In a method for producing a semiconductor device, two or more kinds of organic siloxane compound materials each having a cyclic SiO structure as a main skeleton and having different structures are mixed and thereafter vaporized. Alternatively, those two or more kinds of organic siloxane compound materials are mixed and vaporized simultaneously to produce a vaporized gas. Then, the vaporized gas is transported to a reaction furnace together with a carrier gas. Then, in the reaction furnace, a porous insulating layer is formed by the plasma CVD method or the plasma polymerization method using the vaporized gas. | 08-18-2011 |
20130178061 | METHOD OF MANUFACTURING POROUS FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - First, a porous insulating film | 07-11-2013 |
20130299952 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE - The deposition rate of a porous insulation film is increased, and the film strength of the porous insulation film is improved. Two or more organic siloxane raw materials each having a cyclic SiO structure as a main skeleton thereof, and having mutually different structures, are vaporized, and transported with a carrier gas to a reactor (chamber), and an oxidant gas including an oxygen atom is added thereto. Thus, a porous insulation film is formed by a plasma CVD (Chemical Vapor Deposition) method or a plasma polymerization method in the reactor (chamber). In the step, the ratio of the flow rate of the added oxidant gas to the flow rate of the carrier gas is more than 0 and 0.08 or less. | 11-14-2013 |