Patent application number | Description | Published |
20080211062 | NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate ( | 09-04-2008 |
20090127661 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Semiconductor devices, in particular nitride semiconductor devices for use in the manufacture of laser diodes, prevent peeling-off of the electrode, and at the same time reduces the complexity of processes and a reduction in yield. A nitride semiconductor device according to the invention includes a P-type nitride semiconductor layer with a ridge on its surface, an SiO | 05-21-2009 |
20090130790 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in an ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating. | 05-21-2009 |
20090140389 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, which is an antioxidant film for preventing oxidation of the Ta film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film as an antioxidant film is formed on the entire upper surface of the Ta film which forms the p electrode, to prevent oxidation of the Ta film. This inhibits the resistance between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the low-resistance p electrode. | 06-04-2009 |
20090142871 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O | 06-04-2009 |
20090146308 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film is formed on the entire upper surface of the Ta film which forms part of the p electrode, and serves as an antioxidant film that prevents oxidation of the Ta film. Preventing oxidation of the Ta film, the second Pd film can reduce the resistance that may exist between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the p electrode with low resistance. | 06-11-2009 |
20090160054 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor device is provided which reduces the contact resistance at the interface between a P-type electrode and a nitride semiconductor layer. A nitride semiconductor device includes a P-type nitride semiconductor layer and a P-type electrode formed on the P-type nitride semiconductor layer. The P-type electrode is formed by successive laminations of a metal layer of a metal having a work function of 5.1 eV or more, a Pd layer of palladium, and a Ta layer of tantalum on the P-type nitride semiconductor layer. | 06-25-2009 |
20090170304 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device is provided, which can reduce the contact resistance of an ohmic electrode to a p-type nitride semiconductor layer and can achieve long-term stable operation. In forming, in an electrode forming step, a p-type ohmic electrode of a metal film by successive lamination of a Pd film which is a first p-type ohmic electrode and a Ta film which is a second p-type ohmic electrode on a p-type GaN contact layer, the metal film is formed to include an oxygen atom. In the presence of an oxygen atom in the metal film, then in a heat-treatment step, the p-type ohmic electrode of the metal film is heat-treated in an atmosphere that contains no oxygen atom-containing gas. | 07-02-2009 |
20090245311 | PROCESS FOR PRODUCING NITRIDE SEMICONDUCTOR LASER, AND NITRIDE SEMICONDUCTOR LASER - Provided are a process for producing a nitride semiconductor laser that is a process applied to materials wherein a diffusion of an impurity is not easily attained, such as nitride semiconductor material, and substituted for any process including the step of local diffusion of an impurity, which has been hitherto carried out for GaAlAs based or AlGaInP based semiconductors, and that is a process which is effective, high in precision, and suitable for mass production; and a nitride semiconductor laser produced by this process. The nitride-semiconductor-producing process of the present invention includes the steps of: preparing a substrate having an MQW active layer made of a nitride semiconductor containing In; irradiating a vicinity of a light-emitting end face of the multiquantum well active layer, or a planned region of the light-emitting end face selectively with a laser beam; and performing heating treatment after the laser-irradiating step. | 10-01-2009 |
20100129991 | NITRIDE SEMICONDUCTOR DEVICE HAVING A SILICON-CONTAINING LAYER AND MANUFACTURING METHOD THEREOF - A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate ( | 05-27-2010 |
20120160298 | PHOTOELECTRIC CONVERTER AND MANUFACTURING METHOD THEREOF, AND PHOTOELECTRIC CONVERSION MODULE - A photoelectric converter in which an intermediate layer is provided between a first photoelectric-conversion-layer including a first p-type-semiconductor-layer and a first n-type-semiconductor-layer and a second photoelectric-conversion-layer including a second p-type-semiconductor-layer and a second n-type-semiconductor-layer. The intermediate layer includes an n-type-transparent conductive-oxide-film in contact with the first n-type-semiconductor-layer and a p-type-transparent-conductive oxide-film in contact with the second p-type-semiconductor-layer respectively having a bandgap equal to or higher than 1.5 electron volts. A width of a low carrier concentration region in a film thickness direction, in which a concentration of a free carrier formed near at least one of an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the n-type-transparent-conductive-oxide-film and an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the second p-type-semiconductor-layer is equal to or lower than 1×10 | 06-28-2012 |