Patent application number | Description | Published |
20080233757 | PLASMA PROCESSING METHOD - A plasma processing method for processing a target substrate uses a plasma processing apparatus which includes a vacuum evacuable processing vessel for accommodating the target substrate therein, a first electrode disposed in the processing vessel and connected to a first RF power supply for plasma generation and a second electrode disposed to face the first electrode. The method includes exciting a processing gas containing fluorocarbon in the processing vessel to generate a plasma while applying a negative DC voltage having an absolute value ranging from about 100 V to 1500 V or an RF power of a frequency lower than about 4 MHz to the second electrode. The target layer is etched by the plasma, thus forming recesses on the etching target layer based on the pattern of the resist layer. | 09-25-2008 |
20110088850 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND STORAGE MEDIUM - A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out. | 04-21-2011 |
20110214815 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching. | 09-08-2011 |
20110272097 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring. | 11-10-2011 |
20140124139 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part. | 05-08-2014 |
Patent application number | Description | Published |
20080272855 | LAMINATE TYPE BAND PASS FILTER AND DIPLEXER USING THE SAME - It is possible to generate an additionally attenuation pole in a laminate type band pass filter without adding an attenuation circuit and improve the attenuation characteristics of the laminate type band pass filter by independently controlling the frequencies of the attenuation poles. A diplexer is realized by using at least such a filter. The laminate type band pass filter includes a plurality of first resonators adapted to resonate in a predetermined pass band and arranged in a laminate, the first resonators being mutually electromagnetic field coupled, each of the first resonators having a first inductor conductor, a second inductor conductor and a conductor to be capacitive-coupled to a grounding conductor, the second inductor conductor and the conductor to be capacitive-coupled to the grounding conductor forming a second serial resonator in each of the first resonators, the notch frequency of the second serial resonator being set in a frequency band higher than the resonance frequency band of the first resonator. | 11-06-2008 |
20100242271 | DIELECTRIC LAMINATION STRUCTURE, MANUFACTURING METHOD OF A DIELECTRIC LAMINATION STRUCTURE, AND WIRING BOARD INCLUDING A DIELECTRIC LAMINATION STRUCTURE - A dielectric structure including a metal foil, a dielectric layer and a conductor layer provided in this order, wherein the metal foil has a thickness of from 10 to 40 μm, the dielectric layer has a thickness of from 0.3 to 5 μm, and the conductor layer has a thickness of from 0.3 to 10 μm. The dielectric structure has plural vias which are separated from each other, and which penetrate through both of the dielectric layer and the conductor layer. The vias of the dielectric layer have different diameters which are in a range of from 100 to 300 μm, a diameter of each of the vias of the conductor layer is larger than a diameter of a corresponding via of the dielectric layer by 5 to 50 μm, and a minimum via pitch is from 100 to 350 μm. | 09-30-2010 |
20110083794 | CAPACITOR TO BE INCORPORATED IN WIRING SUBSTRATE, METHOD FOR MANUFACTURING THE CAPACITOR, AND WIRING SUBSTRATE - A wiring substrate in which a capacitor is provided, the capacitor comprising a capacitor body including a plurality of dielectric layers and internal electrode layers provided between the different dielectric layers, wherein said capacitor body has, in at least one side face of said capacitor body, recesses extending in a thickness direction of said capacitor body from at least one of a first principal face of said capacitor body and a second principal face positioned on the side opposite to the first principal face. | 04-14-2011 |
20110090615 | CAPACITOR TO BE INCORPORATED IN WIRING SUBSTRATE, METHOD FOR MANUFACTURING THE CAPACITOR, AND WIRING SUBSTRATE - A wiring substrate in which a capacitor is provided, the capacitor comprising a capacitor body including a plurality of dielectric layers and internal electrode layers provided between the different dielectric layers, wherein said capacitor body has, in at least one side face of said capacitor body, recesses extending in a thickness direction of said capacitor body from at least one of a first principal face of said capacitor body and a second principal face positioned on the side opposite to the first principal face. | 04-21-2011 |
20110157763 | CAPACITOR FOR INCORPORATION IN WIRING BOARD, WIRING BOARD, METHOD OF MANUFACTURING WIRING BOARD, AND CERAMIC CHIP FOR EMBEDMENT - A capacitor comprising: a capacitor body including a plurality of laminated dielectric layers, a plurality of inner electrode layers which are respectively disposed between mutually adjacent ones of the dielectric layers, a first main surface located in a laminated direction of the dielectric layers, and a second main surface opposite to the first main surface; a first outer electrode formed on the first main surface of the capacitor body and electrically connected to the inner electrode layers; a second outer electrode formed on the second main surface of the capacitor body and electrically connected to the inner electrode layers; a first dummy electrode formed on the first main surface of the capacitor body; and a second dummy electrode formed on the second main surface of the capacitor body. | 06-30-2011 |
20130000820 | CAPACITOR TO BE INCORPORATED IN WIRING SUBSTRATE, METHOD FOR MANUFACTURING THE CAPACITOR, AND WIRING SUBSTRATE - A wiring substrate in which a capacitor is provided, the capacitor comprising a capacitor body including a plurality of dielectric layers and internal electrode layers provided between the different dielectric layers, wherein said capacitor body has, in at least one side face of said capacitor body, recesses extending in a thickness direction of said capacitor body from at least one of a first principal face of said capacitor body and a second principal face positioned on the side opposite to the first principal face. | 01-03-2013 |
Patent application number | Description | Published |
20110034740 | METHOD FOR PURIFYING TETRAFLUOROETHYLENE - To provide a method for purifying tetrafluoroethylene by removing, from tetrafluoroethylene containing a polymerization inhibitor, the polymerization inhibitor by adsorption. | 02-10-2011 |
20150093055 | MOTION GUIDE DEVICE - A motion guide device includes a plurality of rolling element guide members provided along the entire length of a rolling element rolling surface so as to guide the unloaded side of a plurality of rolling elements that perform a rolling movement under load between the rolling element rolling surface and a loaded rolling element rolling surface. The rolling element guide member includes a beam member an outer member including a rolling element guide surface for guiding the unloaded side of the rolling elements, and the beam member and the outer member are insert-molded. Such a structure provides the motion guide device including the rolling element guide member that enables low cost manufacturing of a complex shape and capability of secure installation and guidance of the rolling elements with no deflection and can be adapted for use in various types by optionally selecting a connecting means. | 04-02-2015 |
20150104122 | MOTION DEVICE - A motion device ( | 04-16-2015 |
20150220542 | SERVER AND METHOD FOR CAUSING TERMINAL TO DISPLAY SCREEN - One object is to shorten the time required for a terminal to display a screen including images. A server according to an embodiment includes: a storage unit for storing information; and a display control unit for causing, in response to a display request for displaying the screen from the terminal, the terminal to display the screen including the images corresponding to the image files by using the image files stored on the storage of the terminal or the image files stored on the storage of the server selected in accordance with a predetermined selection condition based at least on the throughput of the terminal and the communication capacity between the server and the terminal. | 08-06-2015 |
Patent application number | Description | Published |
20100213531 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A nonvolatile memory element which is provided with a floating gate electrode and a high withstand voltage transistor which is provided with a thick gate insulating film are formed over one substrate without increase in a driving voltage of the nonvolatile memory element. A stacked film of a first insulating film and a second insulating film is formed between an island-like semiconductor region and a floating gate electrode of the nonvolatile memory element and between an island-like semiconductor region and a gate electrode of the transistor. The first insulating film overlapping with the floating gate electrode is removed, and the insulating film between the island-like semiconductor region and the floating gate electrode is formed thinner than the gate insulating film of the transistor. The transistor includes a conductive film which is formed in the same layer as the floating gate electrode and a conductive film which is formed in the same layer as a control gate electrode, and these two conductive films are electrically connected to each other and function as the gate electrodes of the transistor. | 08-26-2010 |
20140002426 | PULSE OUTPUT CIRCUIT AND SEMICONDUCTOR DEVICE | 01-02-2014 |
20140022480 | DISPLAY DEVICE - To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film. | 01-23-2014 |
20140139775 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film. | 05-22-2014 |
20150301395 | DISPLAY DEVICE - To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film. | 10-22-2015 |