Patent application number | Description | Published |
20090010439 | Terminal Apparatus, Server Apparatus, and Digital Content Distribution System - To reduce a frequency of recording communication management information for communication disconnection countermeasure. A digital content distribution system includes a license server ( | 01-08-2009 |
20090187762 | TERMINAL DEVICE, SERVER DEVICE, AND CONTENT DISTRIBUTION SYSTEM - To provide a content distribution system which can prevent use of content which has been temporarily stored after the valid period. | 07-23-2009 |
20100088750 | TERMINAL APPARATUS, SERVER AND SYSTEM THEREOF - A terminal apparatus is provided which can guarantee operation of a use condition bytecode while securing the degree of freedom for a service provider generating the use condition bytecode. A terminal apparatus ( | 04-08-2010 |
20110018722 | Photoelectric Sensor And Photoelectric Sensor System - There are provided a photoelectric sensor and a photoelectric sensor system in which received light quantities of a plurality of photoelectric sensors are displayed in an integrated manner, and slight variation in the received light quantity that has nothing to do with a detected condition of a workpiece is ignored and a photoelectric sensor with abnormity is easily found out. Upon acceptance of an instruction to execute scaled display by a control unit of a photoelectric sensor, a scaling adjustment ratio is calculated by assigning the received light quantity to a target value set to be greater than a display upper limit while executing the scaled display. A received light quantity that is subsequently obtained is scaled based on the calculated scaling adjustment ratio to obtain a received light quantity after the scaling. | 01-27-2011 |
Patent application number | Description | Published |
20080236476 | Silicon single crystal wafer for particle monitor - A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a small surface density even after repeating the SC-1. The wafer is prepared by slicing a silicon single crystal ingot including an area in which crystal originated particles are generated, and the surface density of particles having a size of not less than 0.12 mum is not more than 15 counts/cm | 10-02-2008 |
20090301698 | HEAT EXCHANGER OF PLATE FIN AND TUBE TYPE - A heat exchanger including plate fins stacked at respective intervals relative to one another, and heat exchanger tubes penetrating the fins in. The heat exchanger exchanges heat between first and second fluids flowing, respectively, inside and outside the heat exchanger tubes. Each of the fins includes a substantially planar main body and cut-raised portions extending from the main body and disposed at an upstream side of flow of the second fluid. Each of the cut-raised portions corresponds to a respective heat exchanger tube and includes first and second opposed side ends connected to the main body of the fin. The first side end is nearer to the corresponding heat exchanger tube than is the second side end, the first side end is longer than the second side end, and the first side end is disposed at a downstream side of the flow of the second fluid, facing the corresponding heat exchanger tube. | 12-10-2009 |
20100172181 | PAGE BUFFER CIRCUIT FOR ELECTRICALLY REWRITABLE NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD - Within a page buffer | 07-08-2010 |
20100199716 | GAS-LIQUID SEPARATOR AND AIR CONDITIONER EQUIPPED WITH THE SAME - To improve the separation efficiency of a gas-liquid separator in the gas-liquid separator and an air conditioner, the gas-liquid separator having a vessel with an inlet pipe and an outlet pipe is arranged such that an exit end section of the inlet pipe is formed to be closed or to have a gap, an expanded end section having a width greater than the diameter of that portion of the inlet pipe which crosses a container of the gas-liquid separator is provided, and that a lateral hole is formed in a side face of the expanded end section. Refrigerant vapor and refrigerant liquid are efficiently separated from each other at the expanded end section, and this improves separation efficiency of the gas-liquid separator. | 08-12-2010 |
20140033752 | VEHICLE AIR-CONDITIONING DEVICE - In vehicle air-conditioning devices including a refrigerant circuit having a compressor, an outdoor heat exchanger, an expansion device, and an indoor heat exchanger that are connected by refrigerant pipes to form a refrigeration cycle; an indoor air-sending device that supplies air to the indoor heat exchanger; and an outdoor air-sending device that supplies air to the outdoor heat exchanger, the refrigerant circuit is installed under the floor of a vehicle and uses carbon dioxide as the refrigerant. | 02-06-2014 |
Patent application number | Description | Published |
20090279358 | SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SAME - A semiconductor device includes: a first sector ( | 11-12-2009 |
20090300275 | SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SAME - A semiconductor device includes: a first sector ( | 12-03-2009 |
20150125191 | FIXING DEVICE, AND IMAGE FORMING APPARATUS - Provided is a fixing device including a heating unit that includes a circularly moving heating belt, and a pressurizing roller that presses an external face of the heating belt, the fixing device fixing a toner image on a sheet onto the sheet by nipping the sheet between the heating belt and the pressurizing roller and by heating and pressurizing the sheet transported with the toner image being held. | 05-07-2015 |
20150160590 | HEATING DEVICE, FIXING DEVICE, AND IMAGE FORMING APPARATUS - Provided is a heating device that heats a belt which transports a medium on which a non-fixed image to be fixed onto the medium through heating is formed, the heating device including a heating element, a first insulating layer and a second insulating layer that are arranged to nip the heating element, a first supporting layer that comes into contact with the first insulating layer and a second supporting layer that comes into contact with the second insulating layer, both of which are arranged to nip the first insulating layer, the heating element, and the second insulating layer, and a connection member that connects the first supporting layer and the second supporting layer in a normal direction of the first supporting layer and the second supporting layer. | 06-11-2015 |
Patent application number | Description | Published |
20110263105 | AMORPHOUS SILICON FILM FORMATION METHOD AND AMORPHOUS SILICON FILM FORMATION APPARATUS - The amorphous silicon film formation method includes forming a seed layer on the surface of a base by heating the base and flowing aminosilane-based gas onto the heated base; and forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group onto the seed layer on the surface of the heated base, and thermally decomposing the silane-based gas containing no amino group. | 10-27-2011 |
20110312192 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed. | 12-22-2011 |
20120178264 | METHOD AND APPARATUS FOR FORMING SILICON NITRIDE FILM - A method of forming a silicon nitride film on the surface of an object to be processed, the method including forming a seed layer functioning as a seed of the silicon nitride film on the surface of the object to be processed by using at least an aminosilane-based gas, prior to forming the silicon nitride film on the surface of the object to be processed. | 07-12-2012 |
20130109197 | METHOD OF FORMING SILICON OXIDE FILM | 05-02-2013 |
20140199853 | METHOD OF FORMING SILICON OXIDE FILM - A method of forming a silicon oxide film includes forming a silicon film on a base, the base being a surface to be processed of an object to be processed, and forming a silicon oxide film on the base by oxidizing the silicon film. Between the forming a silicon film and the forming a silicon oxide film, exposing the object to be processed having the silicon film formed thereon to an atmosphere containing at least an oxidizing component is performed. | 07-17-2014 |
20140213067 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas includes forming a first film including at least Si, C and N, and forming a second film including at least Si, C and O. The forming a first film and the forming a second film are set as a cycle and the cycle is performed once or more. | 07-31-2014 |
20150206795 | AMORPHOUS SILICON FILM FORMATION METHOD AND AMORPHOUS SILICON FILM FORMATION APPARATUS - An amorphous silicon film formation method includes transferring a base in a process chamber, heating the base in the process chamber, setting a process pressure inside the process chamber, forming a seed layer on a surface of the base by flowing aminosilane-based gas in the process chamber under a process condition in which the aminosilane-based gas is not thermally decomposed and adsorbing the aminosilane-based gas onto the surface of the base, the process condition having a first temperature, and forming an amorphous silicon film on the seed layer by heating the base at a second temperature higher than the first temperature, flowing silane-based gas containing no amino group in the process chamber, and thermally decomposing the silane-based gas containing no amino group, wherein the forming of the seed layer and the forming of the amorphous silicon film are successively performed in the process chamber. | 07-23-2015 |
20150259796 | FILM FORMING METHOD, FILM FORMING APPARATUS AND STORAGE MEDIUM - A method of forming a thin film containing a doping element in a vacuum atmosphere, which includes: supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations. | 09-17-2015 |
20160071728 | FILM FORMING METHOD AND FILM FORMING APPARATUS - There is provided a method of forming a film on a surface to be processed of a workpiece, the method including: accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece. | 03-10-2016 |
Patent application number | Description | Published |
20120326770 | BOOSTING CIRCUIT - A boosting circuit, includes an output circuit including a first transmission circuit, transmitting charges of a first boosting node to a first output node according to a first transmission control signal, a detection circuit, detecting the voltage level of the first output node, and a pre-charge circuit pre-charging the first boosting node according a detection signal of the detection circuit; a first pump circuit includes a second transmission circuit, transmitting charges to a second output node according to a second transmission control signal, and a first capacitance unit, coupled to the first boosting node, boosting the voltage level of the first boosting node according to charges transmitted in the second output node; and a control circuit, coupled to the output circuit and the first pump circuit, controls the second transmission control signal according to the voltage level of the first output node. | 12-27-2012 |
20140035663 | Boosting Circuit - A boosting circuit, includes an output circuit including a first transmission circuit, transmitting charges of a first boosting node to a first output node according to a first transmission control signal, a detection circuit, detecting the voltage level of the first output node, and a pre-charge circuit pre-charging the first boosting node according a detection signal of the detection circuit; a first pump circuit includes a second transmission circuit, transmitting charges to a second output node according to a second transmission control signal, and a first capacitance unit, coupled to the first boosting node, boosting the voltage level of the first boosting node according to charges transmitted in the second output node; and a control circuit, coupled to the output circuit and the first pump circuit, controls the second transmission control signal according to the voltage level of the first output node. | 02-06-2014 |
20150254132 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes: a memory array; a data-maintaining component, maintaining data read from the memory array or maintaining data used for writing to the memory array; an external input/output terminal; an error correction component, coupling the data-maintaining component and performing error-detection or correcting the data input to the data-maintaining component or output data from the data-maintaining component; a compressing component, coupling between the external input/output terminal and the error correction component and compressing or extending data. The compressing component compresses data provided by the external input/output terminal, provides the compressed data to the error correction component, extends the data provided by the error correction component, and provides the extended data to the external input/output terminal. | 09-10-2015 |
20150311354 | SEMICONDUCTOR DEVICES - The invention provides a voltage regulator. The voltage regulator ( | 10-29-2015 |