Patent application number | Description | Published |
20130119436 | INTERFACE CONTROL IN A BIPOLAR JUNCTION TRANSISTOR - Methods of fabricating bipolar junction transistors, bipolar junction transistors, and design structures for a bipolar junction transistor. A first portion of the intrinsic base layer is masked while a second portion of an intrinsic base layer is etched. As a consequence of the masking, the second portion of the intrinsic base layer is thinner than the first portion of the intrinsic base layer. An emitter and an extrinsic base layer are formed in respective contacting relationships with the first and second portions of the intrinsic base layer. | 05-16-2013 |
20130334664 | INTERFACE CONTROL IN A BIPOLAR JUNCTION TRANSISTOR - Methods of fabricating bipolar junction transistors, bipolar junction transistors, and design structures for a bipolar junction transistor. A first portion of the intrinsic base layer is masked while a second portion of an intrinsic base layer is etched. As a consequence of the masking, the second portion of the intrinsic base layer is thinner than the first portion of the intrinsic base layer. An emitter and an extrinsic base layer are formed in respective contacting relationships with the first and second portions of the intrinsic base layer. | 12-19-2013 |
20140339651 | Semiconductor Device with a Field Plate Double Trench Having a Thick Bottom Dielectric - Disclosed is a power device, such as power MOSFET, and method for fabricating same. The device includes an upper trench situated over a lower trench, where the upper trench is wider than the lower trench. The device further includes a trench dielectric inside the lower trench and on sidewalls of the upper trench. The device also includes an electrode situated within the trench dielectric. The trench dielectric of the device has a bottom thickness that is greater than a sidewall thickness. | 11-20-2014 |
20140339669 | Semiconductor Device with a Field Plate Trench Having a Thick Bottom Dielectric - Disclosed is a power device, such as a power MOSFET, and methods for fabricating same. The device includes a field plate trench. The device further includes first and second trench dielectrics inside the field plate trench. The device also includes a field plate situated over the first trench dielectric and within the second trench dielectric. A combined thickness of the first and second trench dielectrics at a bottom of the field plate trench is greater than a sidewall thickness of the second trench dielectric. | 11-20-2014 |
20140339670 | Semiconductor Device with a Thick Bottom Field Plate Trench Having a Single Dielectric and Angled Sidewalls - Disclosed is a power device, such as a power MOSFET device and a method for fabricating same. The device includes a field plate trench. The field plate trench has a predetermined width and a predetermined sidewall angle. The device further includes a single trench dielectric on sidewalls of the field plate trench and at a bottom of the field plate trench. The single trench dielectric has a bottom thickness that is greater than a sidewall thickness. The device also includes a field plate situated within the single trench dielectric. | 11-20-2014 |
20150325685 | Power Semiconductor Device with Low RDSON and High Breakdown Voltage - A semiconductor structure is disclosed. The semiconductor structure includes a trench having substantially parallel trench sidewalls, and a tapered dielectric liner in the trench. The tapered dielectric liner includes slanted dielectric sidewalls. A conductive filler is enclosed by the slanted dielectric sidewalls in the trench. | 11-12-2015 |
Patent application number | Description | Published |
20090294843 | ENCLOSED VOID CAVITY FOR LOW DIELECTRIC CONSTANT INSULATOR - Field effect devices and ICs ( | 12-03-2009 |
20100084705 | SEMICONDUCTOR DEVICES HAVING REDUCED GATE-DRAIN CAPACITANCE AND METHODS FOR THE FABRICATION THEREOF - Embodiments of a method for fabricating a semiconductor device having a reduced gate-drain capacitance are provided. In one embodiment, the method includes the steps of etching a trench in a semiconductor substrate utilizing an etch mask, widening the trench to define overhanging regions of the etch mask extending partially over the trench, and depositing a gate electrode material into the trench and onto the overhanging regions. The gate electrode material merges between the overhanging regions prior to the filling of the trench to create an empty fissure within the trench. A portion of the semiconductor substrate is removed through the empty fissure to form a void cavity proximate the trench. | 04-08-2010 |
20110024806 | SEMICONDUCTOR DEVICES WITH ENCLOSED VOID CAVITIES - Field effect devices and ICs with very low gate-drain capacitance Cgd are provided by forming a substantially empty void between the gate and the drain regions. For vertical FETS a cavity is etched in the semiconductor (SC) and provided with a gate dielectric liner. A poly-SC gate deposited in the cavity has a central fissure (empty pipe) extending through to the underlying SC. This fissure is used to etch the void in the SC beneath the poly-gate. The fissure is then closed by a dielectric plug formed by deposition or oxidation without significantly filling the etched void. Conventional process steps are used to provide the source and body regions around the cavity containing the gate, and to provide a drift space and drain region below the body region. The etched void between the gate and drain provides lower Cgd and Ron*Qg than can be achieved using low k dielectrics. | 02-03-2011 |
20110147835 | SEMICONDUCTOR DEVICES HAVING REDUCED GATE-DRAIN CAPACITANCE - Embodiments of a semiconductor device include a semiconductor substrate having a first surface and a second surface opposed to the first surface, a trench formed in the semiconductor substrate and extending from the first surface partially through the semiconductor substrate, a gate electrode material deposited in the trench, and a void cavity in the semiconductor substrate between the gate electrode material and the second surface. A portion of the semiconductor substrate is located between the void cavity and the second surface. | 06-23-2011 |
Patent application number | Description | Published |
20090079967 | METHOD FOR MAPPING OF DISPERSION AND OTHER OPTICAL PROPERTIES OF OPTICAL WAVEGUIDES - A method is provided for measurement of dispersion or other optical and mechanical properties within a waveguide by inducing four-photon mixing at different locations within the waveguide by timing a pump signal to counter-collide with and abruptly amplify or attenuate one or both of a probe pulse and a signal pulse at each location. The measurement of the components of the resulting mixing signal created by each collision is used to calculate dispersion defined by the location at which the collision occurred. By combining the measurements from all of the locations, a spatial map of dispersion or other optical or mechanical properties within the waveguide can be generated. | 03-26-2009 |
20090303572 | SPECKLE REDUCTION IN IMAGING APPLICATIONS AND AN OPTICAL SYSTEM THEREOF - Speckle effect in imaging applications is reduced by generating additional speckle patterns on the screen such that the speckle patterns are overlapped and the overlapped speckle patterns average out on the screen to appear as a noise background to the viewers. The speckle patterns are generated by discrete optical signals of a visible frequency comb. A visible frequency comb having discrete optical signals is generated through modulation-instability processes, phase-conjugation processes, and Bragg-scattering processes using a non-linear optical material and a wavelength converter. | 12-10-2009 |
20120257270 | SYSTEMS AND METHODS FOR FIBER OPTIC PARAMETRIC AMPLIFICATION AND NONLINEAR OPTICAL FIBER FOR USE THEREIN - A high confinement nonlinear optical fiber is provided along with methods of parametric amplification for use thereof. The nonlinear optical fiber may include a plurality of concentric layers which are configured to provide different guiding regimes to low-frequency and high-frequency components through transverse geometry and refractive index profiling, thus reducing waveguide dispersion. The resulting optical fiber provides a parametric device with phase-matching in any spectral region of interest, such that a fiber optic parametric amplifier (FOPA) implementing the optical fiber can amplify in any spectral window of interest. A narrow-band FOPA configured to minimize phase mismatching is also provided for use with the optical fiber, and may be implemented as a light source or a monochromator. | 10-11-2012 |
20130223459 | METHOD AND DEVICE FOR FAST TUNING OF OPTICAL SOURCES - A method and device are provided for fast, continuous tuning of an optical source. A first pump signal with a first pump frequency is input into a mixer along with a first seed signal having a first seed frequency. Within the mixer, the first pump signal and the first seed signal generate at least one idler having an idler frequency defined as two times the pump frequency minus the seed frequency. Shifting the pump signal across a frequency range at a sweep rate causes the idler frequency to be shifted by two times the frequency range at two times the sweep rate. The shifted at least one idler is mixed with the shifted pump signal to generate a first mix product that has two times the sweep rate and frequency range of the pump signal. | 08-29-2013 |
20130314767 | SYSTEMS AND METHODS FOR FIBER OPTIC PARAMETRIC AMPLIFICATION AND NONLINEAR OPTICAL FIBER FOR USE THEREIN - A high confinement nonlinear optical fiber is provided along with methods of parametric amplification for use thereof The nonlinear optical fiber may include a plurality of concentric layers which are configured to provide different guiding regimes to low-frequency and high-frequency components through transverse geometry and refractive index profiling, thus reducing waveguide dispersion. The resulting optical fiber provides a parametric device with phase-matching in any spectral region of interest, such that a fiber optic parametric amplifier (FOPA) implementing the optical fiber can amplify in any spectral window of interest. A narrow-band FOPA configured to minimize phase mismatching is also provided for use with the optical fiber, and may be implemented as a light source or a monochromator. | 11-28-2013 |
20140253915 | COHERENT DUAL PARAMETRIC FREQUENCY COMB FOR ULTRAFAST CHROMATIC DISPERSION MEASUREMENT - A wide-band optical frequency comb is provided to estimate an optical phase shift induced in a dispersive material. In contrast to the conventional techniques that rely on a single tunable laser for extracting the dispersion parameter at different frequencies, the wide-band optical frequency comb uses multiple comb lines for simultaneously evaluating the dispersion induced phase shifts in different frequencies. Since the frequency response of the dispersive material is a phase function, a phase associated with each comb line passed through the material represents a discrete measure of the material frequency response. | 09-11-2014 |
20140254619 | METHOD FOR WIDEBAND SPECTRALLY EQUALIZED FREQUENCY COMB GENERATION - The present invention relates to method for spectrally equalized frequency comb generation. In order to carry this method, the following steps are followed: seed laser or lasers are modulated to acquire frequency chirp necessary to enable temporal compression and an increase in peak optical intensity necessary for an efficient nonlinear optical mixing process to occur; the compressed waveform is reshaped by nonlinear-transfer optical element and subsequently used to generate frequency comb in nonlinear waveguide. Ultimately, at the conclusion of these steps, a frequency comb is generated with substantially flat optical spectrum, while retaining variability with respect to the frequency pitch, high coherency and substantially wide spectral band of coverage. | 09-11-2014 |
20140341265 | METHOD FOR SUBRATE DETECTION IN BANDWIDTH CONSTRAINED COMMUNICATION SYSTEMS - The present invention relates to utilization of sampling rate at the receiver that is below the symbol rate of a bandwidth constrained communication system. Furthermore, if the appropriate up-sampling technique is used, the method avails full retrieval of the information from the under sampled received signal. | 11-20-2014 |
Patent application number | Description | Published |
20150361060 | CENTRALLY ACTIVE AND ORALLY BIOAVAILABLE ANTIDOTES FOR ORGANOPHOSPHATE EXPOSURE AND METHODS FOR MAKING AND USING THEM - In alternative embodiments, the invention provides nucleophilic hydroxyimino-acetamido alkylamine antidotes that cross the blood-brain barrier (BBB) to catalyze the hydrolysis of organophosphate (OP)-inhibited human acetylcholinesterase (hAChE) in the central nerve system (CNS). The hydroxyimino-acetamido alkylamines of the invention are designed to fit within AChE active center gorge dimensions, bind with reasonable affinity, and react with the conjugated phosphate atom in the gorge. The hydroxyimino-acetamido alkylamines of the invention are also designed to possess ionization states that govern affinity and reactivity for the two linked hAChE re-activation steps. In alternative embodiments, the invention provides pumps, devices, subcutaneous infusion devices, continuous subcutaneous infusion devices, infusion pens, needles, reservoirs, ampoules, a vial, a syringe, a cartridge, a disposable pen or jet injector, a prefilled pen or a syringe or a cartridge, a cartridge or a disposable pen or jet injector, a two chambered or multi-chambered pump, a syringe, a cartridge or a pen or a jet injector, comprising a compound of the invention. | 12-17-2015 |