Patent application number | Description | Published |
20090103680 | Method Of Generating X-Ray Diffraction Data For Integral Detection Of Twin Defects In Super-Hetero-Epitaxial Materials - A method provides X-ray diffraction data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symmetry belonging to different space groups. The material is mounted in an X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle Ω is set equal to (θ | 04-23-2009 |
20090206368 | Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials - Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material. | 08-20-2009 |
20090237093 | MICROWAVE RECTENNA BASED SENSOR ARRAY FOR MONITORING PLANARITY OF STRUCTURES - A microwave rectenna based sensor array is disclosed, which can remotely detect and monitor the planarity and curvature change of the surface of a structure, irrespective of the size or shape of the structure, by using a microwave signal. | 09-24-2009 |
20100027746 | X-ray diffraction wafer mapping method for rhombohedral super-hetero-epitaxy - A new X-ray diffraction (XRD) method is provided to acquire XY mapping of the distribution of single crystals, poly-crystals, and twin defects across an entire wafer of rhombohedral super-hetero-epitaxial semiconductor material. In one embodiment, the method is performed with a point or line X-ray source with an X-ray incidence angle approximating a normal angle close to 90°, and in which the beam mask is preferably replaced with a crossed slit. While the wafer moves in the X and Y direction, a narrowly defined X-ray source illuminates the sample and the diffracted X-ray beam is monitored by the detector at a predefined angle. Preferably, the untilted, asymmetric scans are of {440} peaks, for twin defect characterization. | 02-04-2010 |
20110022116 | Neural Electronic Interface Device For Motor And Sensory Controls of Human Body - Provided is a neural electronic interface (NEI) device for motor and sensory controls of a human body, into which wireless technology, a smart micro-sensor, and a nano probe pin device (PPD) are integrated and which is implanted into a brain of a patient having abnormal motor and sensory functions to monitor activities of a cerebral nerve or stimulate a cerebral nerve. The NEI device includes: a deep brain monitoring and stimulation (DBMS) module which is implanted through a skull to contact the cerebral nerve of the patient; and a hat module which is installed at a hat put on a head of the patient, wirelessly supplies power to the DBMS module, and performs a wireless communication with the DBMS module to transmit a control signal to control the DBMS module according to nervous system data monitored and fed back from the DBMS module. | 01-27-2011 |
20110046693 | Deep Brain Stimulation Device Having Wireless Power Feeding By Magnetic Induction - Provided is a deep brain stimulation (DBS) device having power wirelessly fed by a magnetic induction to form a rotating magnetic field using a rotating magnetic field disk installed inside a hat put on a patient and generate induced power using an induction coil plate fixed underneath a scalp of the patient to be combined with the rotating magnetic field, to drive electrodes implanted into a brain of the patient so as to correct abnormal motor and sensory functions of the patient using power wirelessly fed from an outside into a body of the patient. The DBS device includes: a hat module which is installed inside a hat put on a head of the o patient to generate a rotating magnetic field; and an implantation module which is implanted through a skull under a scalp to contact a nervous system of the patient and combined with the rotating magnetic field of the hat module to stimulate the cerebral nerve using induced power generated by the magnetic induction. | 02-24-2011 |
20110112602 | Deep Brain Stimulation Device Having Wireless Power Transmission Mechanism - Provided is a deep brain stimulation (DBS) device using a wireless power transmission mechanism to wirelessly receive microwaves from a power transmission antenna installed at a hat put on a patient, transform the microwaves into power, and drive electrodes implanted into a brain of the patient using the power so as to correct abnormal motor and sensory functions of the patient using power which is wirelessly transmitted from an outside into a body of the patient. The DBS device includes: a hat module which is installed at a hat put on a head of the patient to transmit microwaves; and an implantation module which is implanted through a skull under a scalp to contact the cerebral nerve of the patient, receives the microwaves from the hat module, transforms the microwaves into direct current (DC) power, and stimulates the cerebral nerve using the DC power. | 05-12-2011 |
20110117690 | Fabrication of Nanovoid-Imbedded Bismuth Telluride with low dimensional system - A new fabrication method for nanovoids-imbedded bismuth telluride (Bi—Te) material with low dimensional (quantum-dots, quantum-wires, or quantum-wells) structure was conceived during the development of advanced thermoelectric (TE) materials. Bismuth telluride is currently the best-known candidate material for solid-state TE cooling devices because it possesses the highest TE figure of merit at room temperature. The innovative process described here allows nanometer-scale voids to be incorporated in Bi—Te material. The final nanovoid structure such as void size, size distribution, void location, etc. can be also controlled under various process conditions. | 05-19-2011 |
20120147379 | Smart Optical Material Characterization System and Method - Disclosed is a system and method for characterizing optical materials, using steps and equipment for generating a coherent laser light, filtering the light to remove high order spatial components, collecting the filtered light and forming a parallel light beam, splitting the parallel beam into a first direction and a second direction wherein the parallel beam travelling in the second direction travels toward the material sample so that the parallel beam passes through the sample, applying various physical quantities to the sample, reflecting the beam travelling in the first direction to produce a first reflected beam, reflecting the beam that passes through the sample to produce a second reflected beam that travels back through the sample, combining the second reflected beam after it travels back though the sample with the first reflected beam, sensing the light beam produced by combining the first and second reflected beams, and processing the sensed beam to determine sample characteristics and properties. | 06-14-2012 |
20120224185 | Multi-Point Interferometric Phase Change Detection Method - Provided is a method for measuring multi-point interferometric angle changes beginning with an interferometric device capable of measuring at least one main point and at least one reference point. The method includes recording interferometric intensity changes on two or more spots using the main point and the reference point, and determining a sequence having a plurality of peak, local maximas and a plurality of valley, local minimas. The method includes sampling a first, partial sequence and comparing it to a neighboring, partial sequence using a perturbation analysis and additional calculation(s) to compile all phase angle changes for all measured points. Also provided is a computer implemented method to enable nanometer resolution sensitivity in a noisy signal and for characterization of a material in an interferometric device. | 09-06-2012 |
20120225513 | Method of Creating Micro-Scale Silver Telluride Grains Covered with Bismuth Nanoparticles - Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains. | 09-06-2012 |
20140264325 | Double Sided Sl(GE)/Sapphire/lll-Nitride Hybrid Structure - One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer. | 09-18-2014 |
20140264459 | High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiGe Devices - An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhomhohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions. | 09-18-2014 |
20140339580 | Integrated Multi-Color Light Emitting Device Made With Hybrid Crystal Structure - An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides. | 11-20-2014 |
20150078526 | X-ray Diffraction (XRD) Characterization Methods for Sigma=3 Twin Defects in Cubic Semiconductor (100) Wafers - An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blende structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth. | 03-19-2015 |