Patent application number | Description | Published |
20090306408 | 2-Amino-Bicyclo (3.1.0) Hexane-2,6-Dicarboxylic Ester Derivative - A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administration | 12-10-2009 |
20100267687 | PHENYLPYRAZOLE DERIVATIVES - The present invention provides a prophylactic or therapeutic agent for dementia, Alzheimer's disease, attention-deficit hyperactivity disorder, schizophrenia, eating disorders, obesity, diabetes, hyperlipidemia, sleep disorders, narcolepsy, sleep apnea syndrome, circadian rhythm disorder, depression, allergic rhinitis or other diseases. | 10-21-2010 |
20110065667 | PHENYLPYRAZOLE DERIVATIVES - The present invention provides a prophylactic or therapeutic agent for dementia, Alzheimer's disease, attention-deficit hyperactivity disorder, schizophrenia, eating disorders, obesity, diabetes, hyperlipidemia, sleep disorders, narcolepsy, sleep apnea syndrome, circadian rhythm disorder, depression, allergic rhinitis or other diseases. | 03-17-2011 |
20110065668 | PHENYLPYRAZOLE DERIVATIVES - The present invention provides a prophylactic or therapeutic agent for dementia, Alzheimer's disease, attention-deficit hyperactivity disorder, schizophrenia, eating disorders, obesity, diabetes, hyperlipidemia, sleep disorders, narcolepsy, sleep apnea syndrome, circadian rhythm disorder, depression, allergic rhinitis or other diseases. | 03-17-2011 |
20120010414 | GLYCINE TRANSPORTER INHIBITING SUBSTANCES - The present invention aims to provide novel compounds of formula [I] or pharmaceutically acceptable salts thereof that are based on a glycine uptake inhibiting action and which are useful in the prevention or treatment of such diseases as schizophrenia, Alzheimer's disease, cognitive dysfunction, dementia, anxiety disorders (generalized anxiety disorder, panic disorder, obsessive-compulsory disorder, social anxiety disorder, posttraumatic stress disorder, specific phobia, acute stress disorder, etc.), depression, drug addiction, spasm, tremor, and sleep disorder: | 01-12-2012 |
20120116095 | GLYCINE TRANSPORTER INHIBITORS - The present invention aims to provide novel compounds represented by formula [I] or pharmaceutically acceptable salts thereof: | 05-10-2012 |
20130123500 | ETHINYL-PYRAZOLE DERIVATIVE - Provided is a novel compound represented by formula [I] or a pharmaceutically acceptable salt thereof having antagonistic activity against group II metabolism-type glutamic acid (m-Glu) receptors. The compound or pharmaceutically acceptable salt thereof is useful as a prophylactic or therapeutic agent for diseases such as new mood disorders (depressive and bipolar disorders), anxiety disorders (generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, post-traumatic stress disorder, specific phobias, and acute stress disorder), schizophrenia, Alzheimer's disease, cognitive dysfunction, dementia, drug dependence, convulsions, tremors, pain, sleep disorders, and the like. | 05-16-2013 |
20130137865 | HETEROARYL-PYRAZOLE DERIVATIVE - A compound represented by formula [I] and a pharmaceutically accepted salt of said compound are a novel compound and a pharmaceutically accepted salt thereof which exert antagonistic activity against group II metabotropic glutamate (mGlu) receptors, and are effective as a novel preventive or therapeutic agent for disorders such as mood disorders (depressive disorder, bipolar disorder, etc.), anxiety disorders (generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, posttraumatic stress disorder, a specific phobic disorder, acute stress disorder, etc.), schizophrenia, Alzheimer's disease, cognitive impairment, dementia, drug dependence, convulsions, shivering, pain, sleep disorders, and the like. | 05-30-2013 |
20130184460 | GLYCINE TRANSPORTER INHIBITING SUBSTANCES - The present invention aims to provide novel compounds of formula [I] or pharmaceutically acceptable salts thereof that are based on a glycine uptake inhibiting action and which are useful in the prevention or treatment of such diseases as schizophrenia, Alzheimer's disease, cognitive dysfunction, dementia, anxiety disorders (generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, posttraumatic stress disorder, specific phobia, acute stress disorder, etc.), depression, drug addiction, spasm, tremor, pain, and sleep disorder: | 07-18-2013 |
20130331571 | GLYCINE TRANSPORTER-INHIBITING SUBSTANCES - The present invention relates to novel compounds of formula [I] or pharmaceutically acceptable salts thereof: | 12-12-2013 |
20140081025 | HETEROAROMATIC RING DERIVATIVE - The compound represented by formula (IA) | 03-20-2014 |
Patent application number | Description | Published |
20090273031 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on a major surface of the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the major surface of the first semiconductor layer, the third semiconductor layer forming a structure of periodical arrangement with the second semiconductor layer; a fourth semiconductor layer of the second conductivity type provided above the third semiconductor layer; a fifth semiconductor layer of the first conductivity type selectively provided on a surface of the fourth semiconductor layer; a first main electrode electrically connected to the first semiconductor layer; a second main electrode provided to contact a surface of the fifth semiconductor layer and a surface of the fourth semiconductor layer; and a control electrode provided above the fifth semiconductor layer, the fourth semiconductor layer, and the second semiconductor layer via an insulative film. A portion is provided locally in the third semiconductor layer, the portion depleting at a voltage not more than one third of a voltage at which the second semiconductor layer and the third semiconductor layer completely deplete. | 11-05-2009 |
20100096692 | SEMICONDUCTOR DEVICE - A semiconductor device of the invention includes: a super junction structure of an n-type pillar layer and a p-type pillar layer; a base layer provided on the p-type pillar layer; a source layer selectively provided on a surface of the base layer; a gate insulating film provided on a portion being in contact with the base layer, a portion being in contact with the source layer and a portion being in contact with the n-type pillar layer on a portion of a junction between the n-type pillar layer and the p-type pillar layer; a control electrode provided opposed to the base layer, the source layer and the n-type pillar layer through the gate insulating film; and a source electrode electrically connected to the base layer, the source layer and the n-type layer. The source electrode is contact with the surface of the n-type pillar layer located between the control electrodes to form a Schottky junction. | 04-22-2010 |
20100123186 | POWER SEMICONDUCTOR DEVICE - In a vertical power semiconductor device having the super junction structure both in a device section and a terminal section, an n-type impurity layer is formed on the outer peripheral surface in the super junction structure. This allows an electric field on the outer peripheral surface of the super junction structure region to be reduced. Accordingly, a reliable vertical power semiconductor device of a high withstand voltage can be provided. | 05-20-2010 |
20100264489 | SEMICONDUCTOR DEVICE - A transistor contains a first semiconductor layer of a first conductivity type and a drift layer having a pillar structure in which a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type are alternately disposed in a direction parallel to a surface of the first semiconductor layer. The fourth semiconductor layer of the first conductivity type and the fifth semiconductor layer of the second conductivity type are alternately disposed and parallel to the drift layer. The fifth semiconductor layer has a larger amount of impurities than the fourth semiconductor layer. The sixth semiconductor layer of the first conductivity type and the seventh semiconductor layer of the second conductivity type are alternately disposed and parallel to the fourth and the fifth semiconductor layers. The seventh semiconductor layer has a smaller amount of impurities than the sixth semiconductor layer. | 10-21-2010 |
20110018055 | POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a power semiconductor device includes a first semiconductor layer, and first, second and third semiconductor regions. The first semiconductor layer has a first conductivity type. The first semiconductor regions have a second conductivity type, and are formed with periodicity in a lateral direction in a second semiconductor layer of the first conductivity type. The second semiconductor layer is provided on a major surface of the first semiconductor layer in a device portion with a main current path formed in a vertical direction generally perpendicular to the major surface and in a terminal portion provided around the device portion. The second semiconductor region has the first conductivity type and is a portion of the second semiconductor layer sandwiched between adjacent ones of the first semiconductor regions. The third semiconductor regions have the second conductivity type and are provided below the first semiconductor regions in the terminal portion. | 01-27-2011 |
20110233656 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, first semiconductor pillar regions of the first conductivity type and second semiconductor pillar regions of a second conductivity type, a semiconductor region of the first conductivity type, a base region of the second conductivity type, a source region, a first main electrode, a second main electrode and a control electrode. The second semiconductor pillar region includes a plurality of semiconductor regions of the second conductivity type. A difference is provided between peak values of impurity concentration profiles of an uppermost and a lowermost semiconductor regions of the plurality of semiconductor regions, and in the alternately arranging direction of the first and second semiconductor pillar regions, maximum width of the uppermost semiconductor region is generally equal to or narrower than maximum width of the lowermost semiconductor region. | 09-29-2011 |
20110291181 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device including a cell region and a terminal region includes a first semiconductor region of a first conductivity type, semiconductor pillars of the first and a second conductivity type, a second semiconductor region of the second conductivity type, and a third semiconductor region of the first conductivity type. The semiconductor pillars of the first and second conductivity type are and arranged alternately on the first semiconductor region. The second semiconductor region is provided on the semiconductor pillar of the second conductivity type. The third semiconductor region is provided on the second semiconductor region. A semiconductor pillar other than a semiconductor pillar most proximal to the terminal region is provided in a stripe configuration. The semiconductor pillar most proximal to the terminal region includes regions having a high and a low impurity concentration. The regions are provided alternately. | 12-01-2011 |
20120061721 | POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A power semiconductor device includes a first semiconductor layer of a first conductivity type, a first drift layer, and a second drift layer. The first drift layer includes a first epitaxial layer of the first conductivity type, a plurality of first first-conductivity-type pillar layers, and a plurality of first second-conductivity-type pillar layers. The second drift layer is formed on the first drift layer and includes a second epitaxial layer of the first conductivity type, a plurality of second second-conductivity-type pillar layers, a plurality of second first-conductivity-type pillar layers, a plurality of third second-conductivity-type pillar layers, and a plurality of third first-conductivity-type pillar layers. The plurality of second second-conductivity-type pillar layers are connected to the first second-conductivity-type pillar layers. The plurality of second first-conductivity-type pillar layers are connected to the first first-conductivity-type pillar layers. The plurality of third second-conductivity-type pillar layers are arranged on the first epitaxial layer. | 03-15-2012 |
20120074491 | POWER SEMICONDUCTOR DEVICE - In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other. | 03-29-2012 |
20120241823 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer provided thereon, mutually separated columnar third semiconductor layers of a second conductivity type extending within the second semiconductor layer, island-like fourth semiconductor layers of the second conductivity type provided on the third semiconductor layers, fifth semiconductor layers of the first conductivity type, sixth semiconductor layers of the second conductivity type, a gate electrode, a first electrode, and a second electrode. The fifth semiconductor layers are selectively provided on the fourth semiconductor layers. The sixth semiconductor layer electrically connects two adjacent fourth semiconductor layers. The first electrode is in electrical connection with the first semiconductor. The second electrode is in electrical connection with the fourth semiconductor layers and the fifth semiconductor layers via the openings in the gate electrode. | 09-27-2012 |
20130069158 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes a high resistance epitaxial layer having a first pillar region and a second pillar region as a drift layer. The first pillar region includes a plurality of first pillars of the first conductivity type and a plurality of second pillars of the second conductivity type disposed alternately along a first direction. The second pillar region is adjacent to the first pillar region along the first direction. The second pillar region includes a third pillar and a fourth pillar of a conductivity type opposite to a conductivity type of the third pillar. A net quantity of impurities in the third pillar is less than a net quantity of impurities in each of the plurality of first pillars. A net quantity of impurities in the fourth pillar is less than the net quantity of impurities in the third pillar. | 03-21-2013 |
20130093003 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device includes first, second, and third semiconductor layers each having multiple diffusion layers. The first direction widths of the first diffusion layers are the same. The amount of impurity within the first diffusion layers gradually increases from the bottom end towards the top end of the first semiconductor layer. The first direction widths of the second diffusion layers are the same. The amounts of impurity within the second diffusion layers are the same. The first direction widths of the third diffusion layers are narrower than the first direction widths of the first diffusion layers and the first direction widths of the second diffusion layers at the same level, and gradually become narrower from the bottom end towards the top end of the third semiconductor layer. The amount of impurity within the third. diffusion layers are the same. | 04-18-2013 |
20130248979 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench. | 09-26-2013 |
Patent application number | Description | Published |
20090123302 | SCREW COMPRESSOR - A screw compressor comprising: a low pressure stage compressor body; a high pressure stage compressor body that further compresses a compressed air compressed by the low pressure stage compressor body; pinion gears for example, respectively, provided on, for example, a male rotor of the low pressure stage compressor body and, for example, a male rotor of the high pressure stage compressor body; a motor; a bull gear for example, provided on a rotating shaft of the motor; and an intermediate shaft supported rotatably and provided with a pinion gear, which meshes with the bull gear, and a bull gear, which meshes with the pinion gears. Thereby, it is possible to make the motor relatively low in rotating speed while inhibiting the gears from being increased in diameter, thus enabling achieving reduction in cost. | 05-14-2009 |
20100233004 | Air Compressor of Water Injection Type - In a water injection air compressor including a compressor main body for compressing air, a water-feed line for feeding water to an actuation chamber in the compressor main body, an air release valve for releasing the compressed air from the compressor main body, and a control panel for executing an on-load operation mode in which water is fed into the actuation chamber and an air release valve is closed and a no-load operation mode in which the water is fed into the actuation chamber and the air release valve is opened, wherein the control panel further executes a dry operation mode in which the water is prevented from being fed into the actuation chamber and with the air release valve is opened. | 09-16-2010 |
20100303658 | Water-Cooled Oil-Free Air Compressor - A water-cooled oil-free air compressor which features compactness and ensures improved productivity and maintainability. The compressor is an oil-free screw compressor which includes a low pressure stage compressor body, an intercooler for water-cooling the compressed air discharged from the low pressure stage compressor body, a high pressure stage compressor body for further compressing the compressed air cooled by the intercooler, and an aftercooler for water-cooling the air discharged from the high pressure stage compressor body. The intercooler and aftercooler each have a plurality of units, all of which are almost equal in shape. A cooler header on each or either of the inlet and outlet sides for compressed air is shared by the units of each cooler. | 12-02-2010 |
20120251372 | SCREW COMPRESSOR - A screw compressor comprising: a low pressure stage compressor body; a high pressure stage compressor body that further compresses a compressed air compressed by the low pressure stage compressor body; pinion gears for example, respectively, provided on, for example, a male rotor of the low pressure stage compressor body and, for example, a male rotor of the high pressure stage compressor body; a motor; a bull gear for example, provided on a rotating shaft of the motor; and an intermediate shaft supported rotatably and provided with a pinion gear, which meshes with the bull gear, and a bull gear, which meshes with the pinion gears. Thereby, it is possible to make the motor relatively low in rotating speed while inhibiting the gears from being increased in diameter, thus enabling achieving reduction in cost. | 10-04-2012 |
Patent application number | Description | Published |
20090236697 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a super junction region that has a first-conductivity-type first semiconductor pillar region and a second-conductivity-type second semiconductor pillar region alternately provided on the semiconductor substrate. The first semiconductor pillar region and the second semiconductor pillar region in a termination region have a lamination form resulting from alternate lamination of the first semiconductor pillar region and the second semiconductor pillar region on the top surface of the semiconductor substrate. The first semiconductor pillar region and/or the second semiconductor pillar region at a corner part of the termination region exhibit an impurity concentration distribution such that a plurality of impurity concentration peaks appear periodically. The first semiconductor pillar region and/or the second semiconductor pillar region at a corner part of the termination region have an impurity amount such that it becomes smaller as being closer to the circumference of the corner part. | 09-24-2009 |
20100038712 | POWER SEMICONDUCTOR DEVICE - A semiconductor device according to an embodiment of the present invention includes a device part and a terminal part. The device includes a first semiconductor layer, and second and third semiconductor layers formed on the first semiconductor layer, and alternately arranged along a direction parallel to a surface of the first semiconductor layer, wherein the device part is provided with a first region and a second region, each of which includes at least one of the second semiconductor layers and at least one of the third semiconductor layers, and with regard to a difference value ΔN (=N | 02-18-2010 |
20100102381 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first conductivity type, second semiconductor layers of the first conductivity type and third semiconductor layers of a second conductivity type, which are formed on the first semiconductor layer, have stripe shapes extending in a first horizontal direction, and are alternately arranged along a second horizontal direction orthogonal to the first horizontal direction, a fourth semiconductor layer of the second conductivity type, selectively formed on a surface of one of the third semiconductor layers, a fifth semiconductor layer of the first conductivity type, selectively formed on a surface of the fourth semiconductor layer, and formed into a stripe shape extending in the first horizontal direction without being formed into a stripe shape extending in the second horizontal direction, and a control electrode formed on the second, third, fourth, and fifth semiconductor layers via an insulating layer, and having a plane pattern periodical in the first horizontal direction and the second horizontal direction. | 04-29-2010 |
20100187604 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed separately in the first semiconductor region. A difference between a charge quantity expressed by an integral value of a net activated doping concentration in the second semiconductor regions in the surface direction of the semiconductor substrate and a charge quantity expressed by an integral value of a net activated doping concentration in the first semiconductor region in the surface direction of the semiconductor substrate is always a positive quantity and becomes larger from the depth of the first junction plane to a depth of a second junction plane on an opposite side from the first junction plane. | 07-29-2010 |
20100230745 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first or second conductivity type, a second semiconductor layer of the first conductivity type formed on the first semiconductor layer, a third semiconductor layer of the second conductivity type selectively formed on a surface of the second semiconductor layer, at least one trench formed in a periphery of the third semiconductor layer on the surface of the second semiconductor layer, a depth of a bottom surface of the at least one trench being deeper than a bottom surface of the third semiconductor layer, and shallower than a top surface of the first semiconductor layer, and some or all of the at least one trench being in contact with a side surface of the third semiconductor layer, at least one insulator buried in the at least one trench, a first main electrode electrically connected to the first semiconductor layer, and a second main electrode electrically connected to the third semiconductor layer. | 09-16-2010 |
20140077254 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes an element region and an end region, the element region having a semiconductor element formed therein, and the end region surrounding the element region. The semiconductor device includes a semiconductor substrate, a trench, an insulating layer, and a field plate conductive layer. The trench is formed in the semiconductor substrate so as to surround the element region in the end region. The field plate conductive layer is formed in the trench via the insulating layer. | 03-20-2014 |
Patent application number | Description | Published |
20090178150 | Novel Method for Generating Non-Human ES Animals - The present invention provides a method for generating non-human animals by transferring ES cells to three or four tetraploid embryos to produce chimeric embryos and implanting the chimeric embryos to a psudopregnant non-human animal. | 07-09-2009 |
20130277763 | POWER SEMICONDUCTOR DEVICE - In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other. | 10-24-2013 |
20130334597 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type having an effective impurity concentration that is less than an effective impurity concentration of the first semiconductor layer arranged on the first semiconductor layer, a third semiconductor layer of a second conductivity type arranged on the second semiconductor layer, and a gate electrode formed in the first second semiconductor layer and the third semiconductor layer, wherein at least two regions are formed in the power semiconductor device, and a threshold voltage of the first region is different from a threshold voltage of the second region. | 12-19-2013 |
20130341751 | SEMICONDUCTOR DEVICE - A semiconductor device includes a superjunction structure. The influence of external charge on device performance is suppressed using a shield electrode, field plate electrodes, and cover electrodes in various configurations. Optional embodiments include placing an interconnection film between certain electrodes and the upper surface of the superjunction structure. Cover electrodes may also be connected to various potentials to limit the effects of external charge on device performance. | 12-26-2013 |
20140117445 | POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A power semiconductor device includes a first semiconductor layer of a first conductivity type, a first drift layer, and a second drift layer. The first drift layer includes a first epitaxial layer of the first conductivity type, a plurality of first first-conductivity-type pillar layers, and a plurality of first second-conductivity-type pillar layers. The second drift layer is formed on the first drift layer and includes a second epitaxial layer of the first conductivity type, a plurality of second second-conductivity-type pillar layers, a plurality of second first-conductivity-type pillar layers, a plurality of third second-conductivity-type pillar layers, and a plurality of third first-conductivity-type pillar layers. The plurality of second second-conductivity-type pillar layers are connected to the first second-conductivity-type pillar layers. The plurality of second first-conductivity-type pillar layers are connected to the first first-conductivity-type pillar layers. The plurality of third second-conductivity-type pillar layers are arranged on the first epitaxial layer. | 05-01-2014 |
20140191310 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench. | 07-10-2014 |
20150380545 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type having an effective impurity concentration that is less than an effective impurity concentration of the first semiconductor layer arranged on the first semiconductor layer, a third semiconductor layer of a second conductivity type arranged on the second semiconductor layer, and a gate electrode formed in the first second semiconductor layer and the third semiconductor layer, wherein at least two regions are formed in the power semiconductor device, and a threshold voltage of the first region is different from a threshold voltage of the second region. | 12-31-2015 |