Jin-Lin
Jin-Lin Chen, Beijing CN
Patent application number | Description | Published |
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20090100330 | Function-based Object Model for Use in WebSite Adaptation - By understanding a website author's intention through an analysis of the function of a website, website content can be adapted for presentation or rendering in a manner that more closely appreciates and respects the function behind the website. Various inventive systems and methods analyze a website's function so that its content can be adapted to different client environments, e.g. devices, network conditions, or user preferences. A novel function-based object model automatically identifies objects associated with a website, and analyzes those objects in terms of their functions. The function-based object model permits consistent, informed decisions to be made in the adaptation process, so that web content is displayed not only in an organized manner, but in a manner that reflects the author's intention. | 04-16-2009 |
20090125800 | Function-based Object Model for Web Page Display in a Mobile Device - By understanding a website author's intention through an analysis of the function of a website, website content can be adapted for presentation or rendering in a manner that more closely appreciates and respects the function behind the website. A website's function is analyzed so that its content can be adapted to different client environments. A function-based object model (FOM) identifies objects associated with a website, and analyzes those objects in terms of their functions. Desktop oriented websites are adapted for mobile devices based on the FOM and on a mobile control intermediary language. | 05-14-2009 |
Jin-Lin Liang, Alian TW
Patent application number | Description | Published |
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20110062375 | SILICON WAFER RECLAMATION PROCESS - An etchant for removing a porous low-k dielectric layer on a semiconductor substrate includes a hydrofluoric acid-based solvent, a dilating additive for dilating the pores in the porous low-k dielectric, and a passivating additive that forms a passivation layer at the interface between the low-k dielectric layer and the semiconductor substrate. | 03-17-2011 |
Jin-Lin Liang, Alian Township TW
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20090087929 | METHOD AND SYSTEM FOR IMPROVING WET CHEMICAL BATH PROCESS STABILITY AND PRODUCTIVITY IN SEMICONDUCTOR MANUFACTURING - A chemical processing bath and system used in semiconductor manufacturing utilizes a dynamic spiking model that essentially constantly monitors chemical concentration in the processing bath and adds fresh chemical on a regular basis to maintain chemical concentrations at desirable levels. Etch rates and etch selectivities are maintained at desirable levels and contamination from undesirable precipitation is avoided. The system and method automatically compare concentration levels to a plurality of control limits associated with various technologies and identify the technology or technologies that may undergo processing. | 04-02-2009 |
20090233447 | CONTROL WAFER RECLAMATION PROCESS - A method of recycling a control wafer having a dielectric layer deposited thereon involves removing most of the dielectric layer by plasma etching leaving a residual film of the dielectric and then removing the residual dielectric film by a wet etching process. The combination of the dry and wet etching provides effective removal of the dielectric material without damaging the wafer substrate and any residual wet etching byproduct particulate remaining on the wafer substrate is then removed by APM cleaning and scrubbing. | 09-17-2009 |
20110014726 | METHOD OF FORMING SHALLOW TRENCH ISOLATION STRUCTURE - A method for forming a shallow trench isolation (STI) structure with a predetermined target height is provided. A substrate having a pad oxide layer formed on the substrate is provided. A nitride-containing layer with a thickness is formed on the pad oxide. A STI structure is formed and extends through the nitride-containing layer, the pad oxide layer, into the substrate. The thickness of the nitride-containing layer is measured to calculate the height of STI structure according to a correlation between the thickness of the nitride-containing layer and the height of STI structure. A thickness of the top portion STI structure to be removed is determined according to the difference between the height of the STI structure and the predetermined target height and is removed in a first etching process. The nitride-containing layer is removed without etching the STI structure or the pad oxide layer in a second etching process. | 01-20-2011 |
20110223767 | CONTROL WAFER RECLAMATION PROCESS - A method of recycling a control wafer having a low-k dielectric layer deposited thereon involves etching a portion of the low-k dielectric layer using a plasma resulting in a residual film of the low-k dielectric layer and byproduct particulates of carbon on the substrate. The residual dielectric film is removed by wet etching with a low polarization organic solvent that includes HF and a surfactant. | 09-15-2011 |
Jin-Lin Liang, Allan Township TW
Patent application number | Description | Published |
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20090111269 | SILICON WAFER RECLAMATION PROCESS - By exposing a process control wafer having a porous low-k-dielectric layer thereon in an HF-based low-k dielectric etching solvent comprising a dilating additive and a passivating additive, the pores in the low-k dielectric layer are dilated some of which connect with one another to form one or more continuous channels extending through the thickness of the dielectric layer and allowing the HF-based solvent to reach down to the substrate. Then the passivating additive component of the HF-based etching solvent forms a passivation layer at the dielectric layer and the substrate interface that protects substrate from the HF-based etchant. | 04-30-2009 |