Patent application number | Description | Published |
20090194264 | SUBSTRATE MOUNTING TABLE, SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE TEMPERATURE CONTROL METHOD - A substrate mounting table is disposed in a processing chamber for performing a plasma process on a substrate and includes at least one power feed part formed of an insulating material surrounding a power feed line and a cooling medium path. The substrate mounting table further includes a protrusion portion for dividing a space formed on a substrate mounting surface of the mounting table into regions, inlet ports through which cooling gases are introduced into the regions divided by the protrusion portion, and a controller for controlling pressures or flow rates of the cooling gases. | 08-06-2009 |
20100071850 | MOUNTING TABLE AND PLASMA PROCESSING APPARATUS - A mounting table for use in a plasma processing apparatus, on which a substrate is mounted, includes: a conductive member connected to a high frequency power supply and a high frequency power supply; a dielectric layer embedded in a central portion on an upper surface of the conductive member; and an electrostatic chuck mounted on the dielectric layer. Further, the electrostatic chuck is connected to a high voltage DC power supply and includes an electrode film satisfying following conditions: δ/z≧85 (where δ=(ρ | 03-25-2010 |
20100078129 | MOUNTING TABLE FOR PLASMA PROCESSING APPARATUS - A mounting table for use in a plasma processing apparatus, on which a substrate is mounted, includes: an inner conductive member connected to an ion attracting RF power supply; an outer conductive member connected to a plasma generating RF power supply, the outer conductive member surrounding the inner conductive member; and a partition member formed of a dielectric material, the partition member partitioning between the inner conductive member and the outer conductive member. Further, the mounting table includes an electrostatic chuck formed of a dielectric material and arranged between the substrate and the inner conductive member, and between the substrate and the outer conductive member; and a dielectric layer arranged between the electrostatic chuck and the inner conductive member to conceal the inner conductive member from the electrostatic chuck. The electrostatic chuck includes an electrode film that is connected to a high voltage DC power supply. | 04-01-2010 |
20100177455 | METHOD AND APPARATUS FOR REPAIRING AN ELECTROSTATIC CHUCK DEVICE, AND THE ELECTROSTATIC CHUCK DEVICE - In a repairing method for an electrostatic chuck device in which at least an adhesive layer and an attracting layer are provided on a metal base, a side surface of an eroded adhesive layer is wound with a string-like adhesive and thermal compression is performed thereafter. A repairing apparatus for an electrostatic chuck device, which is used in the repairing method, includes a rotatable table for rotating the electrostatic chuck device and a bobbin for supplying the adhesive to the adhesive layer. | 07-15-2010 |
20120043024 | SUBSTRATE PROCESSING APPARATUS AND TEMPERATURE ADJUSTMENT METHOD - There is provided a substrate processing apparatus including: a chamber in which plasma processing is performed on a substrate; a susceptor which is disposed in the chamber and on which the substrate is held; a shower head which is provided to face the susceptor with a processing space therebetween; a high frequency power source which generates plasma by applying high frequency power to the processing space; water spray devices which form a surface wet with water on a rear surface of a surface of the susceptor as a temperature adjustment surface; an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface; and a pressure adjustment device which adjusts a pressure in the evaporation chamber, wherein the pressure in the evaporation chamber is adjusted by using the pressure adjustment device such that the water which forms the wet surface is evaporated, thereby controlling a temperature of the surface of the susceptor by using latent heat of evaporation of the water. | 02-23-2012 |
20120300357 | METHOD AND APPARATUS FOR REPAIRING AN ELECTROSTATIC CHUCK DEVICE, AND THE ELECTROSTATIC CHUCK DEVICE - In a repairing method for an electrostatic chuck device in which at least an adhesive layer and an attracting layer are provided on a metal base, a side surface of an eroded adhesive layer is wound with a string-like adhesive and thermal compression is performed thereafter. A repairing apparatus for an electrostatic chuck device, which is used in the repairing method, includes a rotatable table for rotating the electrostatic chuck device and a bobbin for supplying the adhesive to the adhesive layer. | 11-29-2012 |
Patent application number | Description | Published |
20080212640 | APPARATUS AND METHOD FOR TESTING A TEMPERATURE MONITORING SUBSTRATE - A testing apparatus for a temperature monitoring substrate includes a heat flow generating unit for generating a heat flow in the temperature monitoring substrate in a depthwise direction of the temperature sensors, wherein the temperature sensors are buried in the depthwise direction. Further, a testing method for a temperature monitoring substrate includes generating a heat flow in the temperature monitoring substrate in a depthwise direction, wherein the temperature sensors are buried in the depthwise direction; processing a temperature of the substrate measured by the temperature sensor under the heat flow by a prescribed method; and determining whether or not an error occurs in the temperature sensor. | 09-04-2008 |
20080217291 | SUBSTRATE MOUNTING STAGE AND SURFACE TREATMENT METHOD THEREFOR - A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value. | 09-11-2008 |
20080280536 | SURFACE TREATMENT METHOD - A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus. | 11-13-2008 |
20090104781 | PLASMA PROCESSING APPARATUS, RING MEMBER AND PLASMA PROCESSING METHOD - [Problem to be Solved] In a plasma processing apparatus for executing a process using plasma, promoting the sharing of an apparatus in executing a plurality of different processes and plasma states amongst apparatuses in executing same processes in a plurality of apparatuses are provided. | 04-23-2009 |
20090199967 | MOUNTING STAGE AND PLASMA PROCESSING APPARATUS - A mounting stage for a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate. A conductor member is connected to a radio-frequency power source for producing plasma. A dielectric layer is buried in a central portion of an upper surface of the conductor member. An electrostatic chuck is mounted on the dielectric layer. The electrostatic chuck has an electrode film that satisfies the following condition: | 08-13-2009 |
20090233443 | SUBSTRATE MOUNTING TABLE, SUBSTRATE PROCESSING APPARATUS AND TEMPERATURE CONTROL METHOD - A substrate mounting table for mounting a substrate in a substrate processing apparatus, includes a table body having a substrate mounting surface. An annular peripheral ridge portion is formed on the substrate mounting surface of the table body. The annular peripheral ridge portion makes contact with a peripheral edge portion of the substrate and forms a closed space for circulation of a heat transfer gas below the substrate, when the substrate is mounted on the substrate mounting surface of the table body. The table body has a heat transfer gas inlet port formed in a peripheral edge region of the substrate mounting surface, a heat transfer gas outlet port formed in a central region of the substrate mounting surface, and a flow path formed on the substrate mounting surface for forming a conductance C when the heat transfer gas flows from the inlet port to the outlet port. | 09-17-2009 |
20110232888 | ZONE TEMPERATURE CONTROL STRUCTURE - A zone temperature control structure which has two or more zone of which surface temperatures are controlled to different temperatures, respectively. The structure can maintain a temperature difference by suppressing heat conduction in a direction in which the zones are arrayed, and prevent formation of a hot spot by ensuring smooth heat conduction for heat input in a direction intersecting the direction in which the zones are arrayed. A heat-conducting anisotropic material layer is disposed between the two or more zones. The heat-conducting anisotropic material layer is configured such that heat conductivity is lower in the direction in which the two or more zones are arrayed than in the direction intersecting the direction in which the two or more zones are arrayed. | 09-29-2011 |