Patent application number | Description | Published |
20080311486 | PHOTOMASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a reflective layer formed on a substrate and an absorber pattern is formed on the layer. A reflection correction coefficient map is generated by dividing a mask region, where the absorber pattern is formed, into a plurality of subregions, and determining a reflection correction coefficient for each subregion. The reflection correction value of each subregion is calculated based on the dimensional difference indicated in the pattern dimensional map and the reflection correction coefficient of each subregion. A reflection coefficient of each reflective layer region corresponding to each subregion is changed based on the reflection correction value. | 12-18-2008 |
20090305153 | SUBSTRATE PROCESSING METHOD AND MASK MANUFACTURING METHOD - A substrate processing method uses a processing fluid to selectively process only a region of a portion of a processing surface of a substrate to be processed, by causing a discharge aperture and a suction aperture of a nozzle having the discharge aperture and the suction aperture for the processing fluid and provided movable relative to the substrate to be processed to face the processing surface of the substrate and suctioning the processing fluid supplied onto the processing surface through the suction aperture while supplying the processing fluid from the discharge aperture onto the processing surface. | 12-10-2009 |
20100203432 | EXPOSURE MASK AND METHOD FOR MANUFACTURING SAME AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An exposure mask includes: an insulative substrate; a light reflecting film provided on the substrate; a light absorbing film provided on the light reflecting film and forming a pattern in a center region on the substrate; and an interconnect provided on the substrate, the light reflecting film and the light absorbing film not being provided in a frame-shaped region surrounding the center region, and the interconnect being placed so that a portion of a laminated film composed of the light reflecting film and the light absorbing film located inside the frame-shaped region is electrically connected to a portion of the laminated film located outside the frame-shaped region. | 08-12-2010 |
20100276290 | PATTERNING METHOD, PATTERNING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A patterning method includes supplying an imprint material made of a dielectric in an uncured state onto a workpiece, producing a potential difference between the workpiece and a conductive pattern portion of a template opposed to the workpiece to induce dielectric polarization in the imprint material before curing the imprint material, bringing the pattern portion into contact with the imprint material in the uncured state, curing the imprint material with the pattern portion brought into contact with the imprint material, and stripping the template from the imprint material after curing the imprint material. | 11-04-2010 |
20110290134 | IMPRINT MASK, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate. | 12-01-2011 |
20120241645 | MASK INSPECTION APPARATUS AND MASK INSPECTION METHOD - According to one embodiment, a mask inspection apparatus includes a decompression chamber, a holder, a light irradiation unit, a detection unit, an electrode, and a control unit. The holder is provided in the decompression chamber and holds a mask. The light irradiation unit irradiates a major surface of the mask held by the holder with a light. The detection unit is provided in the decompression chamber to detect electrons generated when the major surface of the mask is irradiated with the light. The electrode is provided between the holder and the detection unit and guides the electrons in a direction from the holder toward the detection unit. The control unit compares a detection result of the electrons detected by the detection unit with a reference value. | 09-27-2012 |
20120244714 | EXPOSURE MASK AND METHOD FOR MANUFACTURING SAME AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An exposure mask includes: an insulative substrate; a light reflecting film provided on the substrate; a light absorbing film provided on the light reflecting film and forming a pattern in a center region on the substrate; and an interconnect provided on the substrate, the light reflecting film and the light absorbing film not being provided in a frame-shaped region surrounding the center region, and the interconnect being placed so that a portion of a laminated film composed of the light reflecting film and the light absorbing film located inside the frame-shaped region is electrically connected to a portion of the laminated film located outside the frame-shaped region. | 09-27-2012 |
20130001753 | TEMPLATE SUBSTRATE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a template substrate includes a substrate and a mask. The substrate includes a mesa region formed in a central portion of an upper surface of the substrate. The mesa region is configured to protrude more than a region of the substrate around the mesa region. An impurity is introduced into an upper layer portion of a partial region of a peripheral portion of the mesa region. The mask film is provided on the upper surface of the substrate. | 01-03-2013 |
20140256158 | IMPRINT MASK, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate. | 09-11-2014 |
Patent application number | Description | Published |
20080206657 | EXPOSURE MASK SUBSTRATE MANUFACTURING METHOD, EXPOSURE MASK MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method of manufacturing an exposure mask substrate including a substrate and a light-shielding film formed on the substrate, comprising measuring a flatness of at least one substrate before formation of a light-shielding film, predicting, on the basis of a measurement result, the flatness of the substrate when the substrate is chucked on an exposure apparatus, selecting the substrate having a predetermined flatness on the basis of a prediction result, predicting, for the selected substrate, a desired flatness of the substrate after light-shielding film formation after a light-shielding film is formed on the substrate, forming a light-shielding film on the selected substrate, measuring the flatness of the substrate having the formed light-shielding film, and determining whether the substrate having the light-shielding film has the desired flatness after light-shielding film formation by comparing a measurement result with a prediction result of the flatness after light-shielding film formation. | 08-28-2008 |
20080232671 | MASK PATTERN VERIFYING METHOD - A mask pattern verifying method include obtaining first information about a hot spot from design data of a mask pattern, obtaining second information about the mask pattern actually formed on a photo mask, and determining a measuring spot of the mask pattern actually formed on the photo mask, based on the first and second information. | 09-25-2008 |
20090035880 | Maunfacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server - There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate. | 02-05-2009 |
20090202924 | METHOD OF EVALUATING A PHOTO MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value. | 08-13-2009 |
20100209829 | PHOTOMASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value. | 08-19-2010 |
20100228379 | Exposure mask manufacturing method, drawing apparatus, semiconductor device manufacturing method, and mask blanks product - A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction, data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus. | 09-09-2010 |
20110262848 | MANUFACTURING METHOD FOR EXPOSURE MASK, GENERATING METHOD FOR MASK SUBSTRATE INFORMATION, MASK SUBSTRATE, EXPOSURE MASK, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND SERVER - There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate, having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate. | 10-27-2011 |
20120024318 | RETICLE CHUCK CLEANER - According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate. | 02-02-2012 |
20120264067 | MANUFACTURING METHOD FOR EXPOSURE MASK, GENERATING METHOD FOR MASK SUBSTRATE INFORMATION, MASK SUBSTRATE, EXPOSURE MASK, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND SERVER - There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate. | 10-18-2012 |
20130179846 | PHOTOMASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value. | 07-11-2013 |
Patent application number | Description | Published |
20090233189 | DEVICE AND METHOD FOR OBTAINING EXPOSURE CORRECTION INFORMATION, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A method of obtaining exposure correction information includes adjusting intensity of light incident on a photomask so that intensity of light output from the photomask has a desired distribution, and includes obtaining the exposure correction information as a distribution of the adjusted intensity of light incident on the photomask. | 09-17-2009 |
20090317732 | PATTERN VERIFICATION-TEST METHOD, OPTICAL IMAGE INTENSITY DISTRIBUTION ACQUISITION METHOD, AND COMPUTER PROGRAM - A pattern verification-test method according to an embodiment of the present invention includes: deriving an illumination condition at a verification-test subject position in a photomask surface of a mask pattern as a verification or a test subject based on the verification-test subject position and illumination condition information about a distribution of an illumination condition in a photomask surface of exposure light incident on the mask pattern, performing lithography simulation on the mask pattern based on the derived illumination condition and the mask pattern, and verifying or testing the mask pattern based on a result of the lithography simulation. | 12-24-2009 |
20100003830 | IMPRINT MASK MANUFACTURING METHOD, IMPRINT MASK MANUFACTURING DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved. | 01-07-2010 |
20100021826 | REFLECTIVE MASK, MANUFACTURING METHOD FOR REFLECTIVE MASK, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A reflective mask comprising: a reflective layer that is arranged on a surface on a side on which EUV light is irradiated and reflects the EUV light; a buffer layer containing Cr that is arranged on a side of the reflective layer on which the EUV light is irradiated and covers an entire surface of the reflective layer; and a non-reflective layer that is arranged on a side of the buffer layer on which the EUV light is irradiated and in which an absorber that absorbs the irradiated EUV light is arranged in a position corresponding to a mask pattern to be reduced and transferred onto a wafer. | 01-28-2010 |
20100032566 | SUBSTRATE SURFACE INSPECTION METHOD AND INSPECTION APPARATUS - A substrate surface inspection method inspects for a defect on a substrate including a plurality of materials on a surface thereof. The inspection method comprises: irradiating the surface of the substrate with an electron beam, a landing energy of the electron beam set such that a contrast between at least two types of materials of the plurality of materials is within a predetermined range; detecting electrons generated by the substrate to acquire a surface image of the substrate, with a pattern formed thereon from the at least two types of materials eliminated or weakened; and detecting the defect from the acquired surface image by detecting as the defect an object image having a contrast by which the object image can be distinguished from a background image in the surface image. Defects present on the substrate surface can be detected easily and precisely by using a cell inspection. | 02-11-2010 |
20100075443 | TEMPLATE INSPECTION METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A template inspection method for performing defect inspection of a template, by bringing a pattern formation surface of a template used to form a pattern close to a first fluid coated on a flat substrate, filling the first fluid into a pattern of the template, and by performing optical observation of the template in a state that the first fluid is sandwiched between the template and the substrate, wherein a difference between an optical constant of the first fluid and an optical constant of the template is larger than a difference between an optical constant of air and the optical constant of the template. | 03-25-2010 |
20120040293 | REFLECTIVE MASK, MANUFACTURING METHOD FOR REFLECTIVE MASK, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A reflective mask comprising: a reflective layer that is arranged on a surface on a side on which EUV light is irradiated and reflects the EUV light; a buffer layer containing Cr that is arranged on a side of the reflective layer on which the EUV light is irradiated and covers an entire surface of the reflective layer; and a non-reflective layer that is arranged on a side of the buffer layer on which the EUV light is irradiated and in which an absorber that absorbs the irradiated EUV light is arranged in a position corresponding to a mask pattern to be reduced and transferred onto a wafer. | 02-16-2012 |
20120091370 | IMPRINT MASK MANUFACTURING METHOD, IMPRINT MASK MANUFACTURING DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved. | 04-19-2012 |
20120250011 | PATTERN VERIFICATION-TEST METHOD, OPTICAL IMAGE INTENSITY DISTRIBUTION ACQUISITION METHOD, AND COMPUTER PROGRAM - A pattern verification-test method according to an embodiment of the present invention includes: deriving an illumination condition at a verification-test subject position in a photomask surface of a mask pattern as a verification or a test subject based on the verification-test subject position and illumination condition information about a distribution of an illumination condition in a photomask surface of exposure light incident on the mask pattern, performing lithography simulation on the mask pattern based on the derived illumination condition and the mask pattern, and verifying or testing the mask pattern based on a result of the lithography simulation. | 10-04-2012 |
20130153791 | Mask Manufacturing Device - According to one embodiment, a mask manufacturing device includes a positional-deviation calculating unit that acquires positional deviation information between an actual position of a pattern formed on a mask substrate and a design position decided at the time of designing the pattern to a predetermined area of a square on the mask substrate; an irradiating-condition calculating unit that calculates an irradiating condition including an irradiating amount and an irradiating position of radiation to correct the positional deviation calculated to the predetermined area of a square on the mask substrate by using positional-deviation correction information, which indicates a relationship between the irradiating amount and the irradiating position of the radiation to the mask substrate and a pattern position change after irradiation of the radiation; and an irradiating unit that irradiates the mask substrate with the radiation under the irradiating condition calculated by the irradiating-condition calculating unit. | 06-20-2013 |
20130157473 | Mask Manufacturing Device - According to one embodiment, a mask manufacturing method includes acquiring positional deviation information between an actual position of a pattern formed on a mask substrate and a design position decided at the time of designing the pattern; calculating an irradiating amount and an irradiating position of radiation to be irradiated to a predetermined area of a square on the mask substrate according to the calculated positional deviation information; and irradiating the radiation based on the calculated irradiating amount and the calculated irradiating position to form in a part of the mask substrate a heterogeneous layer of which volume is expanded more greatly than that of the surrounding mask substrate region. | 06-20-2013 |