Patent application number | Description | Published |
20080225618 | Non-Volatile Semiconductor Memory - A non-volatile semiconductor device has a memory cell array having electrically erasable programmable non-volatile memory cells, reprogramming and retrieval circuits that temporarily store data to be programmed in the memory cell array and sense data retrieved from the memory cell array. Each reprogramming and retrieval circuit has first and second latches that are selectively connected to the memory cell array and transfer data. A controller controls the reprogramming and retrieval circuits on a data-reprogramming operation to and a data-retrieval operation from the memory cell array. Each reprogramming and retrieval circuit has a multilevel logical operation mode and a caching operation mode. In the multilevel logical operation mode, re-programming and retrieval of upper and lower bits of two-bit four-level data is performed using the first and the second latches to store the two-bit four-level data in one of the memory cells in a predetermined threshold level range. In the caching operation mode, data transfer between one of the memory cells selected in accordance with a first address and the first latch is performed while data transfer is performed between the second latch and input/output terminals in accordance with a second address with respect to one-bit two-level data to be stored in one of the memory cells. | 09-18-2008 |
20090052254 | Non-Volatile Semiconductor Memory - A non-volatile semiconductor device has a memory cell array having electrically erasable programmable non-volatile memory cells, reprogramming and retrieval circuits that temporarily store data to be programmed in the memory cell array and sense data retrieved from the memory cell array. Each reprogramming and retrieval circuit has first and second latches that are selectively connected to the memory cell array and transfer data. A controller controls the reprogramming and retrieval circuits on a data-reprogramming operation to and a data-retrieval operation from the memory cell array. Each reprogramming and retrieval circuit has a multilevel logical operation mode and a caching operation mode. In the multilevel logical operation mode, re-programming and retrieval of upper and lower bits of two-bit four-level data is performed using the first and the second latches to store the two-bit four-level data in one of the memory cells in a predetermined threshold level range. In the caching operation mode, data transfer between one of the memory cells selected in accordance with a first address and the first latch is performed while data transfer is performed between the second latch and input/output terminals in accordance with a second address with respect to one-bit two-level data to be stored in one of the memory cells. | 02-26-2009 |
20090080264 | SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULTS OF INTERNAL OPERATIONS - In a semiconductor integrated circuit, an internal circuit is capable of executing a first operation and a second operation concurrently, and an output circuit outputs to the outside of the semiconductor integrated circuit information indicating whether or not the first operation is being executed and information indicating whether or not the second operation is executable. | 03-26-2009 |
20100061149 | Non-Volatile Semiconductor Memory - A non-volatile semiconductor device has a memory cell array having electrically erasable programmable non-volatile memory cells, reprogramming and retrieval circuits that temporarily store data to be programmed in the memory cell array and sense data retrieved from the memory cell array. Each reprogramming and retrieval circuit has first and second latches that are selectively connected to the memory cell array and transfer data. A controller controls the reprogramming and retrieval circuits on a data-reprogramming operation to and a data-retrieval operation from the memory cell array. Each reprogramming and retrieval circuit has a multilevel logical operation mode and a caching operation mode. In the multilevel logical operation mode, re-programming and retrieval of upper and lower bits of two-bit four-level data is performed using the first and the second latches to store the two-bit four-level data in one of the memory cells in a predetermined threshold level range. In the caching operation mode, data transfer between one of the memory cells selected in accordance with a first address and the first latch is performed while data transfer is performed between the second latch and input/output terminals in accordance with a second address with respect to one-bit two-level data to be stored in one of the memory cells. | 03-11-2010 |
20110075488 | Non-Volatile Semiconductor Memory - A non-volatile semiconductor device has a memory cell array having electrically erasable programmable non-volatile memory cells, reprogramming and retrieval circuits that temporarily store data to be programmed in the memory cell array and sense data retrieved from the memory cell array. Each reprogramming and retrieval circuit has first and second latches that are selectively connected to the memory cell array and transfer data. A controller controls the reprogramming and retrieval circuits on a data-reprogramming operation to and a data-retrieval operation from the memory cell array. Each reprogramming and retrieval circuit has a multilevel logical operation mode and a caching operation mode. In the multilevel logical operation mode, re-programming and retrieval of upper and lower bits of two-bit four-level data is performed using the first and the second latches to store the two-bit four-level data in one of the memory cells in a predetermined threshold level range. In the caching operation mode, data transfer between one of the memory cells selected in accordance with a first address and the first latch is performed while data transfer is performed between the second latch and input/output terminals in accordance with a second address with respect to one-bit two-level data to be stored in one of the memory cells. | 03-31-2011 |
20110090742 | SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULTS OF INTERNAL OPERATIONS - In a semiconductor integrated circuit, an internal circuit is capable of executing a first operation and a second operation concurrently, and an output circuit outputs to the outside of the semiconductor integrated circuit information indicating whether or not the first operation is being executed and information indicating whether or not the second operation is executable. | 04-21-2011 |
20110096606 | SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULTS OF INTERNAL OPERATIONS - In a semiconductor integrated circuit, an internal circuit is capable of executing a first operation and a second operation concurrently, and an output circuit outputs to the outside of the semiconductor integrated circuit information indicating whether or not the first operation is being executed and information indicating whether or not the second operation is executable. | 04-28-2011 |
20120182798 | Non-Volatile Semiconductor Memory - A non-volatile semiconductor device has a memory cell array having electrically erasable programmable non-volatile memory cells, reprogramming and retrieval circuits that temporarily store data to be programmed in the memory cell array and sense data retrieved from the memory cell array. Each reprogramming and retrieval circuit has first and second latches that are selectively connected to the memory cell array and transfer data. A controller controls the reprogramming and retrieval circuits on a data-reprogramming operation to and a data-retrieval operation from the memory cell array. Each reprogramming and retrieval circuit has a multilevel logical operation mode and a caching operation mode. In the multilevel logical operation mode, re-programming and retrieval of upper and lower bits of two-bit four-level data is performed using the first and the second latches to store the two-bit four-level data in one of the memory cells in a predetermined threshold level range. | 07-19-2012 |
20120243322 | SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULTS OF INTERNAL OPERATIONS - In a semiconductor integrated circuit, an internal circuit is capable of executing a first operation and a second operation concurrently, and an output circuit outputs to the outside of the semiconductor integrated circuit information indicating whether or not the first operation is being executed and information indicating whether or not the second operation is executable. | 09-27-2012 |
20130262754 | SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULTS OF INTERNAL OPERATIONS - In a semiconductor integrated circuit, an internal circuit is capable of executing a first operation and a second operation concurrently, and an output circuit outputs to the outside of the semiconductor integrated circuit information indicating whether or not the first operation is being executed and information indicating whether or not the second operation is executable. | 10-03-2013 |
Patent application number | Description | Published |
20140085983 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD THEREOF - A nonvolatile semiconductor memory device includes a memory cell array having first and second groups of memory strings, each memory string including first and second memory cells connected between select transistors. The nonvolatile semiconductor memory device further includes a first word line connected to the first memory cells of the memory strings, a second word line connected to the second memory cells of the memory strings, and a control unit configured to control application of control voltages to the select transistors and the word lines, such that a select line voltage is applied to the first word line and a non-select line voltage is applied to the second word line and not discharged while select transistors of the first group of memory strings are turned off and select transistors of the second group of memory strings are turned on. | 03-27-2014 |
20140098612 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device comprises multiple memory strings each including a plurality of first and second groups of serially connected memory cells, and a back gate transistor serially connected between the first and second groups of memory cells, a plurality of word lines, each word line being connected to a control gate of a different memory cell in each of the memory strings, a voltage generating circuit configured to generate control voltages of different voltage levels, and a control circuit configured to control application of control voltages to the word lines and the back gate line. A control voltage applied to the back gate line may be varied depending on how far a selected word line is from the back gate line, and a control voltage applied to unselected word lines may be varied depending on how far the unselected word line is from the selected word line. | 04-10-2014 |
20140247658 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a string of memory cell transistors that are connected to each other in series. A selection transistor is connected between one end of the string of the memory cell transistors and one of a source line and a bit line. A line is selectively connected to a gate electrode of the selection transistor, a driver, or a node that supplies an unselected voltage, or is set to be in a floating state. | 09-04-2014 |
20140247664 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A memory cell array includes a plurality of memory strings divided into a plurality of sub-blocks, each memory string including a plurality of memory cells which are connected to word lines and each sub-block being erasable independently with respect to the other sub-blocks. During writing, a control unit changes a verification level to be applied to a selected word line included in a selected sub-block depending on whether or not data has been written in a non-selected sub-block. | 09-04-2014 |
20150070994 | SEMICONDUCTOR MEMORY DEVICE - A memory device includes a plurality of memory blocks, and a row decoder including a plurality of decoders including a first decoder and a second decoder, the first decoder being configured to output a first block selection signal for selecting one of the memory blocks and a control signal for causing the second decoder to output a second block selection signal for selecting another one of the memory blocks. | 03-12-2015 |
20150131378 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a string of memory cell transistors that are connected to each other in series. A selection transistor is connected between one end of the string of the memory cell transistors and one of a source line and a bit line. A line is selectively connected to a gate electrode of the selection transistor, a driver, or a node that supplies an unselected voltage, or is set to be in a floating state. | 05-14-2015 |
Patent application number | Description | Published |
20150016190 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device comprises multiple memory strings each including a plurality of first and second groups of serially connected memory cells, and a back gate transistor serially connected between the first and second groups of memory cells, a plurality of word lines, each word line being connected to a control gate of a different memory cell in each of the memory strings, a voltage generating circuit configured to generate control voltages of different voltage levels, and a control circuit configured to control application of control voltages to the word lines and the back gate line. A control voltage applied to the back gate line may be varied depending on how far a selected word line is from the back gate line, and a control voltage applied to unselected word lines may be varied depending on how far the unselected word line is from the selected word line. | 01-15-2015 |
20150262681 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - A non-volatile semiconductor memory device includes a memory cell array that includes a plurality of memory cells stacked on a semiconductor substrate, a voltage generating circuit that generates voltages for a memory cell selected for writing and for non-selected memory cells, and a control unit that controls the voltage generating circuit to supply the voltages to the memory cells. Normally, a write voltage is supplied to the selected memory cell, a first voltage lower than the write voltage to the memory cell adjacent to the selected memory cell, and a second voltage lower than the first voltage to the memory cell separated from the selected memory cell by one memory cell. However, if there are not enough memory cells between the selected memory cell and the semiconductor substrate, the second voltage is not supplied. | 09-17-2015 |
20150380100 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD THEREOF - A nonvolatile semiconductor memory device includes a memory cell array having first and second groups of memory strings, each memory string including first and second memory cells connected between select transistors. The nonvolatile semiconductor memory device further includes a first word line connected to the first memory cells of the memory strings, a second word line connected to the second memory cells of the memory strings, and a control unit configured to control application of control voltages to the select transistors and the word lines, such that a select line voltage is applied to the first word line and a non-select line voltage is applied to the second word line and not discharged while select transistors of the first group of memory strings are turned off and select transistors of the second group of memory strings are turned on. | 12-31-2015 |
20160005470 | SEMICONDUCTOR MEMORY DEVICE - A memory device includes a plurality of memory blocks, and a row decoder including a plurality of decoders including a first decoder and a second decoder, the first decoder being configured to output a first block selection signal for selecting one of the memory blocks and a control signal for causing the second decoder to output a second block selection signal for selecting another one of the memory blocks. | 01-07-2016 |