Patent application number | Description | Published |
20090221612 | CERTAIN SUBSTITUTED AMIDES, METHOD OF MAKING, AND METHOD OF USE THEREOF - Certain chemical entities chosen from compounds represented by Formula I and pharmaceutically acceptable salts and mixtures thereof, are provided herein. Pharmaceutical compositions comprising at least one chemical entity and one or more pharmaceutically acceptable vehicle. Methods of treating patients suffering from certain diseases and disorders responsive to the inhibition of Syk activity, which comprises administering to such patients an amount of at least one chemical entity effective to reduce signs or symptoms of the disease or disorder are disclosed. These diseases include cancer (e.g., B-cell lymphoma and leukemia), autoimmune diseases, inflammatory diseases, acute inflammatory reactions, and allergic disorders. Methods of treatment include administering at least one chemical entity as a single active agent or administering at least one chemical entity in combination with one or more other therapeutic agents. Also provided are methods for determining the presence or absence of Syk kinase in a sample. | 09-03-2009 |
20100273765 | Rifamycin analogs and uses thereof - The present invention features rifamycin analogs that can be used as therapeutics for treating or preventing a variety of microbial infections. In one form, the analogs are acetylated at the 25-position, as is rifamycin. In another form, the analogs are deacetylated at the 25-position. In yet other forms, benzoxazinorifamycin, benzthiazinorifamycin, and benzdiazinorifamycin analogs are derivatized at various positions of the benzene ring, including 3′-hydroxy analogs, 4′- and/or 6′ halo and/or alkoxy analogs, and various 5′ substituents that incorporate a cyclic amine moiety. | 10-28-2010 |
20130023499 | CERTAIN SUBSTITUTED AMIDES, METHOD OF MAKING, AND METHOD OF USE THEREOF - Certain chemical entities chosen from compounds represented by Formula I and pharmaceutically acceptable salts and mixtures thereof, are provided herein. Pharmaceutical compositions comprising at least one chemical entity and one or more pharmaceutically acceptable vehicle. Methods of treating patients suffering from certain diseases and disorders responsive to the inhibition of Syk activity, which comprises administering to such patients an amount of at least one chemical entity effective to reduce signs or symptoms of the disease or disorder are disclosed. These diseases include cancer (e.g., B-cell lymphoma and leukemia), autoimmune diseases, inflammatory diseases, acute inflammatory reactions, and allergic disorders. Methods of treatment include administering at least one chemical entity as a single active agent or administering at least one chemical entity in combination with one or more other therapeutic agents. Also provided are methods for determining the presence or absence of Syk kinase in a sample. | 01-24-2013 |
20130172328 | FUSED HETEROCYCLIC COMPOUNDS AS PHOSPHODIESTERASES (PDES) INHIBITORS - The present invention provides a compound which has the effect of PDE inhibition, and which is useful as an agent for preventing or treating schizophrenia or so on represented by the formula (I): | 07-04-2013 |
20150018748 | CHITOSAN-DERIVED COMPOSITIONS - The present invention relates generally to therapeutic compositions comprising chitosan-derived compositions used in connection with methods for treating neoplasms, such as for instance, malignant lung, thyroid and kidney neoplasms, and other types of malignant neoplasms, and other medical disorders. | 01-15-2015 |
Patent application number | Description | Published |
20100220964 | Fiber Optic Drop Cable Furcation Assemblies and Methods - Furcation assemblies ( | 09-02-2010 |
20110176780 | FIBER OPTIC CONNECTOR OF A FIBER OPTIC CONNECTION TERMINATION SYSTEM - A fiber optic connector for making a mechanical splice with an optical fiber secured in an optical fiber handler is disclosed. The fiber optic connector provides the craft with a simple, fast and reliable way for terminating the optical fiber. | 07-21-2011 |
20110188829 | METHODS, CLEAVERS, AND PACKAGINGS FOR CLEAVING AN OPTICAL FIBER USING AN ABRASIVE MEDIUM - Methods, cleavers, and packagings for cleaving an optical fiber using an abrasive medium are disclosed. The abrasive medium may be placed into contact with an optical fiber to induce a flaw in the optical fiber. The optical fiber is broken about the induced flaw to create an end face for fiber optic termination preparations. In one embodiment, a method for cleaving an optical fiber without employing a blade is provided. The method includes providing an optical fiber. A flaw is created in a portion of the optical fiber using a bladeless cleaver comprised of a body and a cleaver structure attached to the body. The cleaver structure is configured to actuate to place an abrasive medium in contact with the portion of the optical fiber to create a flaw in the optical fiber. The method further includes breaking the optical fiber at the flaw to create an end face. | 08-04-2011 |
20110204116 | BLADELESS CLEAVERS HAVING AN ARCUATE EXTERIOR SURFACE AND RELATED METHODS FOR CLEAVING AN OPTICAL FIBER USING AN ABRASIVE MEDIUM - Methods, cleavers, and packagings for cleaving an optical fiber using an abrasive medium are disclosed. In one embodiment, a bladeless cleaver includes a body having an arcuate exterior surface, which may be provided in one embodiment by an exterior surface of a tool or toolkit, such as, but not limited to, a consumables kit or other packaging. A cleaver structure is disposed on the body such that a space between the arcuate exterior surface of the body and the cleaver structure is configured to receive a portion of the optical fiber to be cleaved. The cleaver structure comprises an abrasive medium carrier that is configured to be actuated to place the abrasive medium in contact with the portion of the optical fiber to create a flaw in the portion of the optical fiber. In another embodiment, the portion of the optical fiber may be positioned directly along the arcuate exterior surface of the body. | 08-25-2011 |
20110204117 | BLADELESS CLEAVERS HAVING A FLEXIBLE TONGUE AND RELATED METHODS FOR CLEAVING AN OPTICAL FIBER USING AN ABRASIVE MEDIUM - Methods, cleavers, and packagings for cleaving an optical fiber using an abrasive medium are disclosed. In one embodiment, the bladeless cleaver includes a body having a flexible tongue configured to receive an optical fiber. The flexible tongue is further configured to provide an arcuate surface to bend a portion of the optical fiber. The bladeless cleaver in this embodiment also includes a cleaver structure attached to the body that comprises an abrasive medium carrier configured to support an abrasive medium. The abrasive medium carrier is configured to be actuated to place the abrasive medium in contact with the portion of the optical fiber to create a flaw in the portion of the optical fiber. | 08-25-2011 |
20120125166 | CLEAVERS FOR CLEAVING OPTICAL FIBERS, AND RELATED BLADES, COMPONENTS, AND METHODS - Embodiments disclosed in the detailed description include cleavers for cleaving optical fibers, and related blades, components, and methods. In this regard in one embodiment, a cleaver for cleaving an optical fiber is provided. The cleaver comprises a body and an actuator disposed in the body and configured to be actuated along an actuation path to move a blade in an at least partially arcuate cleaving path. The cleaver also comprises an optical fiber path disposed in the body and intersecting with the at least partially arcuate cleaving path, such that an end portion of an optical fiber disposed in the optical fiber path is cleaved when the actuator is actuated, moving the blade in the at least partially arcuate cleaving path and contacting the end portion of the optical fiber. Related methods and other cleaver components and related methods are disclosed. | 05-24-2012 |
20120125167 | IMBEDDED CARRIER BLADES FOR CLEAVING OPTICAL FIBERS, AND RELATED CLEAVERS AND METHODS - Imbedded carrier blades for cleaving optical fibers and related cleavers and methods are disclosed. In one embodiment, the blade includes a carrier body that defines a blade edge. At least one cleaving material is imbedded into at least a portion of the carrier body. The at least one cleaving material is additionally exposed on at least a portion of the blade edge to induce a flaw in a portion of an optical fiber contacted by the blade edge. The portion of the optical fiber can be broken about the induced flaw to create an end face for fiber optic termination preparations. Cleaving the optical fiber prepares an end face on the optical fiber to prepare fiber optic terminations, including in the field. The imbedded carrier blade can be disposed in a cleaver to cleave an optical fiber. Methods of cleaving an optical fiber using an imbedded carrier blade are also provided. | 05-24-2012 |
Patent application number | Description | Published |
20080240666 | Retention and rotation clamp assembly for use with an angled optical fiber cleaver - The present invention relates generally to an angled optical fiber cleaver that is used to cleave optical fibers prior to mechanical splicing and that provides a desired optical fiber endface angle. More specifically, the present invention relates to an angled optical fiber cleaver that incorporates a novel retention and rotation clamp assembly that successively engages, securely holds, and rotates an optical fiber prior to cleaving, this rotation providing the desired optical fiber endface angle. Advantageously, the novel retention and rotation and clamp assembly of the present invention is actuated via a single linear button press/release, eliminating the cumbersome steps associated with conventional devices and methodologies. | 10-02-2008 |
20130220097 | CABLE PREPARATION TOOL AND METHODS THEREFOR - A tool for preparing a cable for connectorization. The tool has a portion for stripping a cable jacket and another portion for cutting fibrous strength elements, such as aramid strength elements, relative to the exposed fiber. The strength element cutting portion includes a blade enclosed in a cover that also serves as a handle for the tool. The cover also has a stop edge to ensure that a desired excess length of the strength element remains after cutting the strength element. The excess strength element length can then be used to connectorize the cable. | 08-29-2013 |
20140238208 | STRIPPING APPARATUS AND METHODS FOR OPTICAL FIBERS - Apparatus and methods for stripping tight-buffered optical fibers are disclosed. The apparatus is configured to perform one or more of the functions of stripping a tight buffer layer, removing a coating layer, and cleaving the fiber, in a single motion. | 08-28-2014 |
20150063757 | FIBER OPTIC CONNECTOR INSTALLATION TOOL - An installation tool for terminating one or more field optical fibers with a fiber optic connector includes a guide member and camming member. The guide member has a slot extending in an axial direction and is configured to receive a portion of the fiber optic connector. The camming member is positioned next to the guide member and is movable between a first position spaced from the slot and a second position axially aligned with the slot. Additionally, the camming member is configured to engage and actuate a cam member of the fiber optic connector by moving from the first position to the second position when the fiber optic connector is received in the slot. | 03-05-2015 |
Patent application number | Description | Published |
20090206440 | Power Semiconductor Device - A semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity type. An edge termination zone has a junction termination extension (JTE) region of the second conductivity type, the region having portions extending away from the well region and a number of field limiting rings of the second conductivity type disposed at the upper surface in the junction termination extension region. | 08-20-2009 |
20090289690 | SEMICONDUCTOR DEVICE WITH SWITCH ELECTRODE AND GATE ELECTRODE AND METHOD FOR SWITCHING A SEMICONDUCTOR DEVICE - A semiconductor device with switch electrode and gate electrode and a method for switching a semiconductor device. One embodiment provides a semiconductor substrate with an emitter region, a drift region, a body region and a source region. The drift region is formed between the emitter and the body region while the body region is formed between the drift and the source region. A first trench structure extends from the source region at least partially into the drift region. The first trench structure includes a gate electrode arranged next to the body region and a switch electrode arranged in portions next to the drift region, wherein the switch and gate electrodes are electrically insulated from each other in the trench structure. A first gate driver is electrically connected to the gate electrode while a second gate driver is electrically connected to the switch gate. | 11-26-2009 |
20110018029 | SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE - A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region. | 01-27-2011 |
20110309423 | SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD FOR MANUFACTURING - A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the semiconductor body by an insulation layer, wherein the trench has a top trench portion which extends from the semiconductor surface at least to a depth which is greater than a depth of the first semiconductor area, wherein the trench further has a bottom trench portion extending subsequent to the top trench portion at least up to the second semiconductor area, and wherein the top trench portion has a first lateral dimension and the bottom trench portion has a second lateral dimension which is greater than the first lateral dimension. | 12-22-2011 |
20130001640 | SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE - A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region. | 01-03-2013 |
20130193510 | SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD FOR MANUFACTURING - A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the semiconductor body by an insulation layer, wherein the trench has a top trench portion which extends from the semiconductor surface at least to a depth which is greater than a depth of the first semiconductor area, wherein the trench further has a bottom trench portion extending subsequent to the top trench portion at least up to the second semiconductor area, and wherein the top trench portion has a first lateral dimension and the bottom trench portion has a second lateral dimension which is greater than the first lateral dimension. | 08-01-2013 |
20130270632 | SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE - A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region. | 10-17-2013 |
Patent application number | Description | Published |
20120037955 | Transistor Component with Reduced Short-Circuit Current - A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency γ of less than 0.7. | 02-16-2012 |
20120098097 | IGBT MODULE AND A CIRCUIT - An IGBT module is provided. The IGBT module has at least a first individual IGBT with a first softness during switching-off the IGBT module, and at least a second individual IGBT connected in parallel to the at least one first IGBT. The at least one second individual IGBT has a second softness during switching-off the IGBT module which is different than the first softness. Further a circuit and an electronic power device having two individual IGBTs, which are connected in parallel, are provided. | 04-26-2012 |
20120217539 | Semiconductor Component with Improved Dynamic Behavior - Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region. | 08-30-2012 |