Patent application number | Description | Published |
20080261381 | Method for manufacturing bonded substrate - When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer. | 10-23-2008 |
20090007960 | Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell - A method for manufacturing a single crystal silicon solar cell includes the steps of implanting either hydrogen ions or rare-gas ions into a single crystal silicon substrate; bringing the single crystal silicon substrate in close contact with a transparent insulator substrate via a transparent adhesive, with the ion-implanted surface being a bonding surface; curing the transparent adhesive; mechanically delaminating the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type in the delaminated surface side of the single crystal silicon layer, and causing a plurality of areas of a first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of individual electrodes on each one of the plurality of areas of the first conductivity type and on each one of the plurality of areas of the second conductivity type in the single crystal silicon layer; forming a collector electrode for the plurality of individual electrodes on the plurality of areas of the first conductivity type, and a collector electrode for the plurality of individual electrodes on the plurality of areas of the second conductivity type; and forming a light-reflecting film. | 01-08-2009 |
20110003460 | METHOD FOR TREATING SURFACE OF SOI SUBSTRATE - A method for minimizing thickness variation of a substrate in an anneal step and achieving the smoothing of the surface of the substrate. Specifically provided is a method for treating the surface of a SOI substrate, including the steps of treating the surface of the SOI substrate by the PACE method using a plasma or the GCIB method using a gas cluster ion beam and subjecting the treated substrate to a heat treatment in argon atmosphere or an inert gas atmosphere containing 4 vol % or less of hydrogen so that the treated SOI substrate can be annealed. | 01-06-2011 |
20110003462 | METHOD FOR MANUFACTURING SOI WAFER - Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900° C. or higher on the immersed post-peeling SOI wafer, and/or polishing a silicon film layer of the immersed post-peeling SOI wafer, through CMP polishing by 10 to 50 nm. | 01-06-2011 |
20110014775 | METHOD FOR PRODUCING SILICON FILM TRANSFERRED INSULATOR WAFTER - [PROBLEM] Provided is a method for producing an SOI wafer which the method can prevent occurrence of thermal strain, detachment, crack and the like attributed to a difference in thermal expansion coefficients between the insulating substrate and the SOI layer and also improve the uniformity of film thickness of the SOI layer. | 01-20-2011 |
20110104871 | METHOD FOR MANUFACTURING BONDED SUBSTRATE - Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m | 05-05-2011 |
20120118354 | METHOD FOR MANUFACTURING SINGLE CRYSTAL SILICON SOLAR CELL AND SINGLE CRYSTAL SILICON SOLAR CELL - A single crystal silicon solar cell including a stack having at least a light-reflecting film, a single crystal silicon layer, a transparent adhesive layer, and a transparent insulator substrate; a plurality of areas of a first conductivity type and a plurality of areas of a second conductivity type formed in a surface of the silicon layer near the light-reflecting film; a plurality of pn junctions formed in a plane direction of the silicon layer; a plurality of first individual electrodes, each being formed on each one of the plurality of areas of the first conductivity type, and a plurality of second individual electrodes, each being formed on each one of the plurality of areas of the second conductivity type; and a first collector electrode for connecting the plurality of first individual electrodes and a second collector electrode for connecting the plurality of second individual electrodes. | 05-17-2012 |
Patent application number | Description | Published |
20090221131 | Method for preparing substrate having monocrystalline film - Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate. | 09-03-2009 |
20090246935 | Method for producing soi substrate - Provided is a method for producing an SOI substrate comprising a transparent insulating substrate and a silicon film formed on a first major surface of the insulating substrate wherein a second major surface of the insulating substrate which is opposite to the major surface is roughened, the method suppressing the generation of metal impurities and particles in a simple and easy way. More specifically, provided is a method for producing an SOI substrate comprising a transparent insulating substrate, a silicon film formed on a first major surface of the transparent insulating substrate, and a roughened second major surface, which is opposite to the first major surface, the method comprising steps of: providing the transparent insulating substrate, mirror surface-processing at least the first major surface of the transparent insulating substrate, forming a silicon film on the first major surface of the transparent insulating substrate, and laser-processing the second major surface of the transparent insulating substrate so as to roughen the second major surface by using a laser. | 10-01-2009 |
20100244182 | METHOD OF MANUFACTURING LAMINATED WAFER BY HIGH TEMPERATURE LAMINATING METHOD - To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer | 09-30-2010 |
Patent application number | Description | Published |
20110293856 | RETARDATION ELEMENT - The present invention aims at providing a retardation element which has excellent heat resistance, is small in the changes in the retardation value in an atmosphere of high temperatures, and is capable of maintaining stable optical performance. | 12-01-2011 |
20110293857 | LAMINATE FOR LAMINATED GLASS - An object of the present invention is to provide a laminate for a laminated glass that exhibits an excellent heat resistance, exhibits little variation in its retardation value in high-temperature atmospheres, and can maintain stable optical properties. | 12-01-2011 |
20120021230 | LAMINATE FOR LAMINATED GLASS AND INTERLAYER FILM FOR LAMINATED GLASS - The present invention aims to provide a laminate for a laminated glass which is used as a head-up display (HUD) and is not deteriorated even if exposed to light, and with which a laminated glass having excellent impact resistance can be prepared. | 01-26-2012 |
20130131233 | LAMINATE FOR LAMINATED GLASS AND INTERLAYER FILM FOR LAMINATED GLASS - A laminate for a laminated glass which is used as a head-up display (HUD) and is not deteriorated even if exposed to light, and with which a laminated glass having excellent impact resistance can be prepared, wherein an interlayer film for a laminated glass and a retardation element sandwiched between adhesive layers are laminated, the interlayer film for a laminated glass contains a thermoplastic resin and an ultraviolet absorber, the interlayer film for a laminated glass contains, as the ultraviolet absorber, a benzotriazole compound or a benzophenone compound, and at least one compound selected from the group consisting of a malonic ester compound, an oxanilide compound and a triazine compound. | 05-23-2013 |
20150224441 | METHOD FOR PREVENTING FOULING OF EXHAUST GAS FLOW PATH OF BURNING EQUIPMENT AND METHOD FOR REMOVING AMMONIUM HYDROGEN SULFATE CONTAINED IN EXHAUST GAS OF BURNING EQUIPMENT - Provided is a method for effectively preventing fouling of an exhaust gas flow path of a burning equipment due to ammonium hydrogen sulfate; and thus, the method for preventing fouling of an exhaust gas flow path of a burning equipment in the present invention comprises: a step of adding a tertiary amine and/or a quaternary ammonium compound to an exhaust gas which contains ammonium hydrogen sulfate which is generated in a burning equipment thereby forming a reaction product between the ammonium hydrogen sulfate and the tertiary amine and/or the quaternary ammonium compound, and a step of controlling a temperature and a relative humidity in at least a part of an exhaust gas flow path of the burning equipment in such a way that the reaction product may be kept in a solid state. | 08-13-2015 |
Patent application number | Description | Published |
20120003402 | Retardation Film Produced by Using Cellulose Derivative - The present invention relates to a retardation film having biaxial characteristics or an achromatic property, which is obtained by uniaxially stretching of a film composed of cellulose derivatives in which a hydroxyl group of cellulose is substituted by an acyl group having 5 to 20 carbon atoms, preferably 7 to 20 carbon atoms, more preferably 8 to 20 carbon atoms or cross-linked compounds of cellulose derivatives, said retardation film is a superior retardation film which has negative birefringence and excellent optical characteristics and also can be easy to obtain by uniaxially stretching, and in addition, the heat resistance, tearing strength and the like which are weaknesses of cellulose ester are improved. | 01-05-2012 |
20160085002 | INFRARED REFLECTIVE FILM, AND LAMINATED GLASS EMPLOYING SAME - The present invention has the objective of providing an infrared reflective film by means of which it is possible to achieve an effective heat-shielding performance with a smaller number of layers than hitherto using a construction employing specified infrared reflective layers. Solution Means The infrared reflective film of the present invention has at least two infrared reflective layers and, of these infrared reflective layers, the center reflective wavelength of at least one infrared reflective layer is between 1200 and 1300 nm. Furthermore, the laminated glass of the present invention is formed by interposing this infrared reflective film between two sheets of intermediate film, and laminating these between two sheets of glass. | 03-24-2016 |