Patent application number | Description | Published |
20090219696 | POWER CONVERSION DEVICE AND FABRICATING METHOD FOR THE SAME - A power conversion device in which the inductance of a main circuit is reduced, a surge voltage is suppressed, elements are properly cooled, which is miniaturized and reduced in weight as a whole, and is excellent in handling performance in a manufacturing process and a maintenance work. A positive side arm unit includes IGBT modules, a coupling diode module, a cooling plate on which the modules are mounted, and a first laminated bus bar connected to the respective modules. A negative side arm unit includes IGBT modules, a coupling diode module, a cooling plate on which the modules are mounted, and a second laminated bus bar connected to the respective modules, and both the laminated bus bars and the capacitors are connected to one another by a third laminated bus bar. Both the cooling plates are parallel to each other so that the mount surfaces thereof are set in the same direction. | 09-03-2009 |
20100013085 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes power semiconductor elements joined to wiring patterns of a circuit substrate, cylindrical external terminal communication sections, and wiring means for forming electrical connection between, for example, the power semiconductor elements and the cylindrical external terminal communication sections. The power semiconductor elements, the cylindrical external terminal communication sections, and the wiring means are sealed with transfer molding resin. The cylindrical external terminal communication sections are arranged on the wiring patterns so as to be substantially perpendicular to the wiring patterns, such that external terminals are insertable and connectable to the cylindrical external terminal communication sections, and such that a plurality of cylindrical external terminal communication sections among the cylindrical external terminal communication sections are arranged two-dimensionally on each of wiring patterns that act as main circuits. | 01-21-2010 |
20100013086 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device with improved productivity, reduced size and reduction of amounting area therefore is provided. In the provided power semiconductor device, an external terminal does not limit an increase in current. The power semiconductor device is sealed with transfer molding resin. In the power semiconductor device, a cylindrical external terminal communication section is arranged on a wiring pattern so as to be substantially perpendicular to the wiring pattern. An external terminal can be inserted and connected to the cylindrical external terminal communication section. The cylindrical external terminal communication section allows the inserted external terminal to be electrically connected to the wiring pattern. A taper is formed at, at least, one end of the cylindrical external terminal communication section, which one end is joined to the wiring pattern. | 01-21-2010 |
20100117219 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device in which transfer molding resin seals: a metallic circuit substrate; a power semiconductor element joined to a wiring pattern; and a side surface of a cylindrical external terminal communication section provided on the wiring pattern and to which an external terminal can be inserted and connected. The cylindrical external terminal communication section is substantially perpendicular to a surface on which the wiring pattern is formed. An outer surface of a metal plate of the metallic circuit substrate and a top portion of the cylindrical external terminal communication section are exposed from the transfer molding resin. The transfer molding resin is not present within the cylindrical external terminal communication section. | 05-13-2010 |
20100127383 | POWER SEMICONDUCTOR MODULE - In the power semiconductor module, a wiring metal plate electrically connects between power semiconductor elements joined to the circuit pattern, and between the power semiconductor elements and the circuit pattern. Cylindrical main terminals are joined, substantially perpendicularly, to the wiring metal plate and the circuit pattern, respectively. A cylindrical control terminal is joined, substantially perpendicularly, to one of the power semiconductor elements. | 05-27-2010 |
20100127389 | POWER SEMICONDUCTOR MODULE - The power semiconductor module includes: a circuit substrate; power semiconductor elements joined to element mounting portions of the wiring pattern on the circuit substrate; the cylindrical external terminal communication section joined to the wiring pattern; circuit forming means for connecting between portions that require electrical connection therebetween; and transfer molding resin for sealing these components. The cylindrical external terminal communication section is a metal cylinder, and the cylindrical external terminal communication section has a hole filled with gel. | 05-27-2010 |
20100133667 | POWER SEMICONDUCTOR MODULE - A wiring process between the provided power semiconductor module and the external circuit is simple. In the power semiconductor module, a power semiconductor element and a cylindrical conductor are joined to one surface of a lead frame. An opening of the cylindrical conductor is exposed at a surface of transfer molding resin. Sealing with the transfer molding resin is performed such that terminal portions of the lead frame protrude from peripheral side portions of the transfer molding resin. The cylindrical conductor is conductive with a control circuit. The terminal portions of the lead frame are each conductive with a main circuit. | 06-03-2010 |
20100133681 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes a power semiconductor module having cylindrical conductors which are joined to a wiring pattern so as to be substantially perpendicular to the wiring pattern and whose openings are exposed at a surface of transfer molding resin, and an insert case having a ceiling portion and peripheral walls, the ceiling portion being provided with external terminals that are fitted into, and passed through, the ceiling portion, the external terminals having outer-surface-side connecting portions at the outer surface side of the ceiling portion and inner-surface-side connecting portions at the inner surface side of the ceiling portion. The power semiconductor module is set within the insert case such that the inner-surface-side connecting portions of the external terminals are inserted into the cylindrical conductors. | 06-03-2010 |
20100133684 | POWER SEMICONDUCTOR MODULE AND MANUFACTURING METHOD THEREOF - A power semiconductor module includes: a circuit board having a metal base plate, a high thermal conductive insulating layer, and a wiring pattern; power semiconductor elements electrically connected to the wiring pattern; tubular external terminal connection bodies provided to the wiring pattern for external terminals; and a transfer mold resin body encapsulated to expose through-holes in the metal base plate and used to fixedly attach cooling fins to the face of the metal base plate on the other side with attachment members, the face of the metal base plate on the other side, and top portions of the tubular external terminal connection bodies, to form insertion holes for the attachment members communicating with the through-holes and having a larger diameter than the through-holes, and to cover the one side and side faces of the metal base plate and the power semiconductor elements. | 06-03-2010 |
20100134979 | POWER SEMICONDUCTOR APPARATUS - A power semiconductor apparatus has: plural power semiconductor units, sealed by a transfer mold resin so that insertion holes of conductive tubular sockets in which plural external terminals can be insertion-connected are exposed in one surface thereof and a metal heat dissipation surface is exposed in another surface thereof; and a conductive connecting member having the plural external terminals. The surfaces of the power semiconductor units that have the insertion holes of tubular sockets are arrayed in the same direction in the plural power semiconductor units. Electrical wiring connection between the plural power semiconductor units is effected by inserting the external terminals of the conductive connecting member into the respective insertion holes of the tubular sockets of the plural power semiconductor units. | 06-03-2010 |
20100231269 | DRIVE CIRCUIT FOR SEMICONDUCTOR ELEMENT - A drive circuit wherein any abnormality of a semiconductor element is prevented from being erroneously sensed in a case where a gate “ON” command has entered in a state in which a gate voltage of the semiconductor element has not lowered fully. A detection process for a controlled variable of the semiconductor element is permitted only within a period which corresponds to a controlled variable of the semiconductor element at the time when an “ON” signal has been inputted to a control circuit, and a detected controlled variable which is detected within the period and a comparison controlled variable which is set in correspondence with the controlled variable are compared so as to output an abnormality signal, whereby the semiconductor element is turn-off at a speed lower than in normal turn-off. | 09-16-2010 |
20110089765 | POWER CONVERTING APPARATUS - A power converting apparatus includes a first inverter circuit including a high-voltage first DC voltage source and operated at a low frequency using Si IGBTs having a high withstand voltage exceeding 1000 V and a second inverter circuit including a low-voltage capacitor operated by high-frequency PWM using SiC MOSFETs having a low withstand voltage, wherein an AC side of the first inverter circuit is connected in series to an AC side of the second inverter circuit. The power converting apparatus outputs AC power having a prescribed voltage waveform obtained from the sum of voltages generated by the first and second inverter circuits. | 04-21-2011 |
20110187003 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes power semiconductor elements joined to wiring patterns of a circuit substrate, cylindrical external terminal communication sections, and wiring means for forming electrical connection between, for example, the power semiconductor elements and the cylindrical external terminal communication sections. The power semiconductor elements, the cylindrical external terminal communication sections, and the wiring means are sealed with transfer molding resin. The cylindrical external terminal communication sections are arranged on the wiring patterns so as to be substantially perpendicular to the wiring patterns, such that external terminals are insertable and connectable to the cylindrical external terminal communication sections, and such that a plurality of cylindrical external terminal communication sections among the cylindrical external terminal communication sections are arranged two-dimensionally on each of wiring patterns that act as main circuits. | 08-04-2011 |
20110260315 | POWER BLOCK AND POWER SEMICONDUCTOR MODULE USING SAME - A power block includes an insulating substrate, a conductive pattern formed on the insulating substrate, a power semiconductor chip bonded onto the conductive pattern by lead-free solder, a plurality of electrodes electrically connected to the power semiconductor chip and extending upwardly away from the insulating substrate, and a transfer molding resin covering the conductive pattern, the lead-free solder, the power semiconductor chip, and the plurality of electrodes, wherein surfaces of the plurality of electrodes are exposed at an outer surface of the transfer molding resin and lie in the same plane as the outer surface, the outer surface being located directly above the conductive pattern. | 10-27-2011 |
20120039045 | POWER MODULE AND METHOD FOR DETECTING INSULATION DEGRADATION THEREOF - A method and device for detecting insulation degradation of a power module, which detects, in advance, degradation of an insulating sheet based on a current change immediately before breakdown of an insulation characteristic from a current value of a current flowing through the insulating sheet, thereby detecting a failure of a power module caused by the degradation of insulation. The device includes: a current detector sampling and detecting a current value of a current flowing through an insulating sheet of the power module at a predetermined time interval; a calculator determining, based on the current value, a state in which the insulation characteristic of the insulating sheet is so degraded that the breakdown is imminent, and outputting a degradation determination result of YES when it is determined that the insulating sheet is in the state immediately before the breakdown; a current storage storing a current value i(n−1) at a previous sampling time point; and an alarm generating an alarm in response to the degradation determination result of YES. The calculator outputs the degradation determination result of YES when a present current value in exceeds ten times the previous current value i(n−1). | 02-16-2012 |
20120099353 | POWER CONVERTING APPARATUS - A power converting apparatus includes a main inverter having a high-voltage DC power supply that operates at a low frequency employing SiC MOSFETs having a high withstand voltage exceeding 600 V and a sub-inverter having a low-voltage capacitor that operates through high-frequency PWM employing Si MOSFETs having a low withstand voltage. With AC sides of the main inverter and the sub-inverter connected in series, the power converting apparatus outputs AC power having a prescribed voltage waveform by adding voltages individually generated by the main inverter and the sub-inverter. Specifically, the SiC MOSFETs are used only in the main inverter of which devices are required to have a high withstand voltage and the Si MOSFETs are used in the sub-inverter of which devices may have a relatively low withstand voltage, whereby conduction loss is reduced with an inexpensive circuit configuration. | 04-26-2012 |
20120286292 | POWER SEMICONDUCTOR MODULE - A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module. | 11-15-2012 |
20140138707 | POWER SEMICONDUCTOR MODULE - A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region. | 05-22-2014 |