Patent application number | Description | Published |
20090285692 | NI-BASE ALLOY FOR TURBINE ROTOR OF STEAM TURBINE AND TURBINE ROTOR OF STEAM TURBINE - An Ni-base alloy for a turbine rotor of a steam turbine contains in percent by weight C: 0.01 to 0.15, Cr: 15 to 28, Co: 10 to 15, Mo: 8 to 12, Al: 1.5 to 2, Ti: 0.1 to 0.6, B: 0.001 to 0.006, Re: 0.5 to 3, and the balance of Ni and unavoidable impurities. | 11-19-2009 |
20100158681 | NI-BASED ALLOY FOR A FORGED PART OF A STEAM TURBINE WITH EXCELLENT HIGH TEMPERATURE STRENGTH, FORGEABILITY AND WELDABILITY, ROTOR BLADE OF A STEAM TURBINE, STATOR BLADE OF A STEAM TURBINE, SCREW MEMBER FOR A STEAM TURBINE, AND PIPE FOR A STEAM TURBINE - A Ni-based alloy for a forged part of a steam turbine having excellent high temperature strength, forgeability and weldability includes, in percentage by mass, 0.01 to 0.15 of C, 18 to 28 of Cr, 10 to 15 of Co, 8 to 12 of Mo, 1.5 to 2 of Al, 0.1 to 3 of Ti, 0.001 to 0.006 of B, 0.1 to 0.7 of Ta, and the balance of Ni plus unavoidable impurities. | 06-24-2010 |
20100158682 | NI-BASED ALLOY FOR A CASTING PART OF A STEAM TURBINE WITH EXCELLENT HIGH TEMPERATURE STRENGTH, CASTABILITY AND WELDABILITY, TURBINE CASING OF A STEAM TURBINE,VALVE CASING OF A STEAM TURBINE, NOZZLE BOX OF A STEAM TURBINE, AND PIPE OF A STEAM TURBINE - A Ni-based alloy for a casting part of a steam turbine having excellent high temperature strength, castability and weldability includes, in percentage by mass, 0.01 to 0.15 of C, 18 to 28 of Cr, 10 to 15 of Co, 8 to 12 of Mo, 1.5 to 2 of Al, 0.1 to 3 of Ti, 0.001 to 0.006 of B, 0.1 to 0.7 of Ta, and the balance of Ni plus unavoidable impurities. | 06-24-2010 |
20100239425 | NICKEL-BASE ALLOY FOR TURBINE ROTOR OF STEAM TURBINE AND TURBINE ROTOR OF STEAM TURBINE USING THE SAME - A nickel (Ni)-base alloy for a turbine rotor of a steam turbine containing, in mass %, carbon (C): 0.01% to 0.15%, chromium (Cr): 18% to 28%, cobalt (Co): 10% to 15%, molybdenum (Mo): 8% to 12%, aluminum (Al): 0.5% to less than 1.5%, titanium (Ti): 0.7% to 3.0%, and boron (B): 0.001% to 0.006%, the balance being nickel (Ni) and unavoidable impurities. | 09-23-2010 |
20100251713 | Steam turbine power plant - An intermediate-pressure turbine is divided into a high-temperature, high-pressure side high-temperature, intermediate-pressure turbine section | 10-07-2010 |
20120096861 | CARBON DIOXIDE RECOVERY METHOD AND CARBON-DIOXIDE-RECOVERY-TYPE STEAM POWER GENERATION SYSTEM - According to one embodiment, a carbon-dioxide-recovery-type steam power generation system comprises a boiler that generates steam and an exhaust gas, an absorption tower that allows carbon dioxide contained in the exhaust gas to be absorbed in an absorption liquid, a regeneration tower that regenerates discharges a carbon dioxide gas from the absorption liquid, a reboiler that heats the absorption liquid of the regeneration tower, a turbine that is rotationally driven by the steam, a condenser that generates condensate by cooling steam exhausted from the turbine, a compressor that compresses the carbon dioxide gas, and a cooler that cools the carbon dioxide gas, which has been compressed by the compressor, while using a part of the condensate as cooling water. The reboiler is supplied with steam from the turbine and steam generated by the cooling of the carbon dioxide gas at the cooler. | 04-26-2012 |
20120096863 | CARBON DIOXIDE RECOVERY METHOD AND CARBON-DIOXIDE-RECOVERY-TYPE STEAM POWER GENERATION SYSTEM - According to one embodiment, a carbon-dioxide-recovery-type steam power generation system comprises a boiler that generates steam and an exhaust gas, an absorption tower that allows carbon dioxide contained in the exhaust gas to be absorbed in an absorption liquid, a regeneration tower that discharges a carbon dioxide gas from the absorption liquid supplied from the absorption tower, a reboiler that heats the absorption liquid of the regeneration tower, a turbine that is rotationally driven by the steam, a first condenser, a second condenser, and a desuperheater. The first condenser generates condensate by cooling steam exhausted from the turbine. The second condenser condenses the carbon dioxide gas while using a part of the condensate as cooling water, and generates hot water. | 04-26-2012 |
20120096865 | CARBON DIOXIDE RECOVERY METHOD AND CARBON-DIOXIDE-RECOVERY-TYPE STEAM POWER GENERATION SYSTEM - According to one embodiment, a carbon-dioxide-recovery-type steam power generation system comprises a boiler that produces steam and generates an exhaust gas, a first turbine that is rotationally driven by the steam, an absorption tower allows carbon dioxide contained in the exhaust gas to be absorbed into an absorption liquid, a regeneration tower that discharges the carbon dioxide gas from the absorption liquid supplied from the absorption tower, a condenser that removes moisture from the carbon dioxide gas, discharged from the regeneration tower, by condensing the carbon dioxide gas using cooling water, a compressor that compresses the carbon dioxide gas from which the moisture is removed by the condenser, and a second turbine that drives the compressor. The steam produced by the cooling water recovering the heat from the carbon dioxide gas in the condenser is supplied to the first turbine or the second turbine. | 04-26-2012 |
Patent application number | Description | Published |
20090206035 | Vinylidene Fluoride Resin Hollow Filament Porous Membrane, Water Filtration Method Using the Same, and Process for Producing Said Vinylidene Fluoride Resin Hollow Filament Porous Membrane - A hollow-fiber porous membrane, comprising a hollow fiber-form porous membrane in a network texture of vinylidene fluoride resin showing a pore size distribution in a direction of its membrane thickness including an outer surface-average pore size P1 as measured by a scanning electron microscope and a membrane layer-average pore size P2 as measured by half-dry method giving a ratio P1/P2 of at least 2.5. The hollow-fiber porous membrane is excellent in long-term water filtration performance including efficiency of regeneration by air scrubbing. The hollow-fiber porous membrane is produced through a process, wherein a mixture of vinylidene fluoride resin, a plasticizer and a good solvent for vinylidene fluoride resin, is melt-extruded in a hollow-fiber film and cooled and formed into a solidified film within a cooling medium containing at least a certain proportion of a good solvent for vinylidene fluoride resin. | 08-20-2009 |
20090261034 | Vinylidene Fluoride Resin Hollow Fiber Porous Membrane and Method for Production Thereof - A hollow-fiber porous membrane comprising a hollow-fiber form of vinylidene fluoride resin and satisfying the following properties (A) and (B), is provided as a hollow-fiber porous membrane of vinylidene fluoride resin having an average pore size and a further uniform pore size distribution (A) and a large water permeation rate regardless of good efficiency of blocking minute particles (bacteria) (B), as represented by: (A) a ratio Pmax (1 m)/Pm of at most 4.0 between a maximum pore size Pmax (1 m) measured at a test length of 1 m according to the bubble point method and an average pore size Pm of 0.05-0.20 μm measured according to the half dry method; and (B) a ratio F (L=200 mm, v=70%)/PM | 10-22-2009 |
20100133169 | VINYLIDENE FLUORIDE RESIN HOLLOW-FIBER POROUS MEMBRANE AND PROCESS FOR PRODUCTION OF THE SAME - A hollow-fiber porous membrane, comprising a hollow fiber-form porous membrane of vinylidene fluoride resin providing: a ratio F (L=200 mm, v=70%)/Pm | 06-03-2010 |
Patent application number | Description | Published |
20090046494 | Semiconductor memory device - Disclosed herein is a semiconductor memory device which prevents the voltage of a select bit line from being reduced due to the action of coupling capacitance between the select bit line and a non-select bit line, reduces current consumption, and enables high speed reading of bit lines. The semiconductor memory device includes a plurality of memory banks, a plurality of second bit lines, a plurality of selector circuits, a voltage supply circuit. Each of the memory banks includes a plurality of first bit lines, a plurality of word lines, and a plurality of memory banks which are installed between the first bit lines and the word lines. The voltage supply circuit holds non-select bit lines of the first bit lines at the GND level at all times. | 02-19-2009 |
20100080055 | SEMICONDUCTOR MEMORY DEVICE - Disclosed herein is a semiconductor memory device which prevents the voltage of a select bit line from being reduced due to the action of coupling capacitance between the select bit line and a non-select bit line, reduces current consumption, and enables high speed reading of bit lines. The semiconductor memory device includes a plurality of memory banks, a plurality of second bit lines, a plurality of selector circuits, a voltage supply circuit. Each of the memory banks includes a plurality of first bit lines, a plurality of word lines, and a plurality of memory banks which are installed between the first bit lines and the word lines. The voltage supply circuit holds non-select bit lines of the first bit lines at the GND level at all times. | 04-01-2010 |
20110290716 | VINYLIDENE FLUORIDE RESIN POROUS FILM AND MANUFACTURING METHOD THEREFOR - A porous membrane of vinylidene fluoride resin, having two major surfaces sandwiching a certain thickness, including a dense layer which governs filtration performance on the one major surface side and a sparse layer which contributes to reinforcement on the other opposite major surface side, and having an asymmetrical gradient network texture including pore sizes which increase continuously from the one major surface to the other opposite major surface, wherein the dense layer includes a 7 μm-thick portion contiguous to the one major surface showing a porosity A | 12-01-2011 |
20120012521 | VINYLIDENE FLUORIDE RESIN HOLLOW FIBER POROUS MEMBRANE AND PROCESS FOR PRODUCING SAME - A hollow-fiber porous membrane of vinylidene fluoride resin, satisfying: a ratio Pmax/Pm of at most 2.0 between a maximum pore size Pmax and an average pore size Pm, and a Pm of 0.13 μm-0.25 μm, according to the half-dry/bubble point method (ASTM F316 and ASTM E1294); a coefficient of variation in outer surface pore size of at most 70%, and a porosity of 75-90%. The hollow-fiber porous membrane has a moderate average pore size, has a pore size distribution which is uniform as a whole and also on the outer surface, and has a high porosity, so that it shows not only a good pure water permeability but also retains a good water permeability even in continuous filtration of cloudy water. The hollow-fiber porous membrane is produced through a process which includes: melt-extruding a vinylidene fluoride resin together with a plasticizer and a good solvent therefor into a hollow-fiber film, cooling and solidifying the film, extracting the plasticizer and good solvent, omitting a heat-treatment for crystallization, and stretching the hollow-fiber after the extraction at a limited temperature range of 80-95° C. which is higher than a conventional stretching temperature. | 01-19-2012 |
20120103895 | VINYLIDENE FLUORIDE RESIN POROUS MEMBRANE, MANUFACTURING METHOD THEREFOR, AND METHOD FOR MANUFACTURING FILTRATE WATER - A porous membrane of vinylidene fluoride resin, including a 10 μm-thick portion contiguous to one surface thereof which comprises network resin fibers having an average diameter of at most 100 nm and shows a porosity A1 of at least 60% as measured by a focused ion beam-scanning electron microscope, and showing a surface pore size of at most 0.3 μm on said one surface thereof. The porous membrane has a treated water side surface layer showing a small surface pore size suitable for water filtration treatment and formed of extremely thin network resin fibers giving an extremely high porosity, thus showing an excellent minute particle-blocking performance and also extremely good anti-soiling resistance and regeneratability. The porous membrane is produced by a process including: melt-extrusion of a composition obtained by adding to vinylidene fluoride resin of a large molecular weight a relatively large amount of a polyester plasticizer which is mutually soluble with the resin and provides the resultant mixture with a crystallization temperature that is substantially identical to that of the vinylidene fluoride resin alone to form film, followed by cooling from one side of the film to solidify the film, extracting the plasticizer and stretching the membrane after the extraction while partially wetting a surface portion thereof. | 05-03-2012 |
20120160764 | POROUS VINYLIDENE FLUORIDE RESIN MEMBRANE AND PROCESS FOR PRODUCING SAME - A porous membrane of vinylidene fluoride resin, comprising a substantially single layer membrane of vinylidene fluoride resin having two major surfaces sandwiching a certain thickness, including a dense layer that has a small pore size and governs a filtration performance on one major surface side thereof, having an asymmetrical gradient network structure wherein pore sizes continuously increase from the one major surface side to the other opposite major surface side, and satisfying conditions: (a) the dense layer includes a 5 μm-thick portion contiguous to the one major surface showing a porosity A | 06-28-2012 |
Patent application number | Description | Published |
20090085707 | ELECTRONIC DEVICE - An electronic device includes a substrate, a first coil that has a spiral shape and is provided on the substrate, a second coil that has a spiral shape, is provided above the first coil, and is spaced from the first coil, a first connection portion that electrically couples the first coil and the second coil, a wire that is provided on the substrate and connects one of the first coil and the second coil to outside, and a second connection portion that is mechanically connected to an outer side face of outermost circumference of the second coil and is mechanically connected on the substrate where one of the wire and the first coil is not provided. | 04-02-2009 |
20090085708 | ELECTRONIC DEVICE - An electronic device includes a substrate, two ellipse spiral coils that are provided on the substrate, are spaced from each other in a longitudinal direction thereof, and are electrically connected to each other, two wires that are electrically connected to outermost circumference of the two coils respectively and extract the two coils to outside, and a connection portion that electrically connects each end of innermost circumference of the two coils. A ratio of inner diameter against outer diameter of the two coils in a long axis direction and in a short axis direction thereof is respectively 0.5 to 0.8. | 04-02-2009 |
20090166068 | ELECTRONIC COMPONENT - An electronic component includes: a multilayer ceramic substrate that has a penetration electrode formed therein, and has a passive element provided on the upper face thereof; an insulating film that is provided on the multilayer ceramic substrate, and has an opening above the penetration electrode; a first connecting terminal that is provided on the insulating film so as to cover the opening, and is electrically connected to the penetration electrode; and a second connecting terminal that is provided on a region of the insulating film other than the opening region. | 07-02-2009 |
20090170032 | METHOD OF MANUFACTURING ELECTRONIC DEVICE - A method of manufacturing an electronic device includes forming a photosensitive SOG oxide layer on a multi-layer ceramics substrate having a penetrating electrode, forming an opening by subjecting the photosensitive SOG oxide layer to an exposure treatment and developing treatment so that an upper face of the penetrating electrode is exposed, and forming a passive element on the photosensitive SOG oxide layer, the passive element being connected to the penetrating electrode through the opening. | 07-02-2009 |
20090213561 | ELECTRONIC DEVICE - An electronic device includes an insulative substrate, a spiral inductor formed by an interconnection layer provided on a first surface of the insulative layer, a first chip that is mounted on a second surface of the insulative layer opposite to the first surface and is electrically connected to a passive circuit including the spiral inductor, the first chip having an electrically conductive substrate, and a first protrusion that is provided on one of the first and second surface of the insulative substrate and protrudes therefrom, the first protrusion being electrically connected to one of the passive circuit and the first chip to an external circuit. | 08-27-2009 |
20090219670 | ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating an electronic device includes selectively forming a glass layer on a ceramic substrate by printing, baking the glass layer, and forming a capacitor on the glass layer, the capacitor including metal electrodes and a dielectric layer interposed between the metal electrodes. | 09-03-2009 |
20090237894 | ELECTRONIC DEVICE - An electronic device includes a substrate, a coil that has a spiral shape and is provided on the substrate, and a conductive pattern that is provided inside of the coil, has optical reflectivity higher than that of a surface of the coil, and is divided into pieces. | 09-24-2009 |
20090297785 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a method for manufacturing an electronic device including: printing a conductive pattern on a first surface of a first green sheet having a multilayer structure, the conductive pattern being electrically connected to an internal interconnection formed in the first green sheet; superposing a second green sheet on the first surface of the first green sheet, the second green sheet having an opening located in an area corresponding to the conductive pattern; pressurizing the first green sheet and the second green sheet superposed thereon in directions in which the second green sheet is superposed on the first green sheet; burning the first green sheet and the second green sheet superimposed thereon to thus form a multilayer ceramic substrate; and mounting an electronic element on a second surface of the multilayer ceramic substrate opposite to the first surface, the electronic element being electrically connected to the internal interconnection. | 12-03-2009 |
20140208749 | CARBON DIOXIDE RECOVERY METHOD AND CARBON-DIOXIDE-RECOVERY-TYPE STEAM POWER GENERATION SYSTEM - According to one embodiment, a carbon-dioxide-recovery-type steam power generation system comprises a boiler that produces steam and generates an exhaust gas, a first turbine that is rotationally driven by the steam, an absorption tower allows carbon dioxide contained in the exhaust gas to be absorbed into an absorption liquid, a regeneration tower that discharges the carbon dioxide gas from the absorption liquid supplied from the absorption tower, a condenser that removes moisture from the carbon dioxide gas, discharged from the regeneration tower, by condensing the carbon dioxide gas using cooling water, a compressor that compresses the carbon dioxide gas from which the moisture is removed by the condenser, and a second turbine that drives the compressor. The steam produced by the cooling water recovering the heat from the carbon dioxide gas in the condenser is supplied to the first turbine or the second turbine. | 07-31-2014 |