Roesch
Frederic Roesch, Colmar FR
Patent application number | Description | Published |
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20110278388 | CORE FORMING SUPPORT OF A PAPER REEL - A core intended to support a reel of paper, particularly toilet paper, is formed by winding at least one web of cellulose wadding. The core is formed by winding at least one web of cellulose wadding having at least 0.51 g of water-soluble material per gram of cellulose wadding, the water-soluble material being designed to make the web of cellulose wadding more rigid and easier to disintegrate. Thus configured, the core that has both mechanical strength fit for the intended purpose and is far easier to disintegrate than a core made of cardboard such that it can be disposed of directly in a toilet bowl without the risk of blocking the waste pipe. | 11-17-2011 |
20110287273 | METHOD FOR MAKING A SHEET OF DEGRADABLE PAPER, USE OF SAID SHEET FOR MAKING A MANDREL DEFINING A ROLL CARRIER, DEGRADABLE PAPER SHEET, AND MANDREL INCLUDING AT LEAST ONE OF SAID SHEETS - A method for making a water-degradable paper sheet involves the following: providing at least one strip of a water-soluble binding material in the form of a dry film; providing at least two strips each made of at least one ply of cellulose wadding; placing the strip of water-soluble binding material between the two strips of cellulose wadding; humidifying, assembling and pressing the three strips; and drying the complex strip thus obtained. The sheet thus obtained can be used for making a roll carrier mandrel by helically winding one or more strips from the sheet about a cylinder. Articles produced from the sheet can particularly be used in the field of products for sanitary or domestic use. | 11-24-2011 |
Maximilian Roesch, Villach-St. Ulrich AT
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20100117144 | SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE - In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material. | 05-13-2010 |
20110284958 | Semiconductor Component - A semiconductor component may include a semiconductor layer which has a front side and a back side, a first terminal electrode on the front side, a second terminal electrode on the back side, a first dopant region of a first conduction type on the front side, which is electrically connected to one of the terminal electrodes, a second dopant region of a second conduction type in the semiconductor layer, which is electrically connected to the other terminal electrode, a pn junction being formed between the first and second dopant regions, a dielectric layer on the back side between the semiconductor layer and the second terminal electrode, and the dielectric layer having an opening through which an electrical connection between the second terminal electrode and the first or second dopant region is passed. | 11-24-2011 |
20120025303 | SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE - In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material. | 02-02-2012 |
20150187879 | LATERAL MOS POWER TRANSISTOR HAVING BACKSIDE TERMINAL - A semiconductor component may include a semiconductor layer which has a front side and a back side, a first terminal electrode on the front side, a second terminal electrode on the back side, a first dopant region of a first conduction type on the front side, which is electrically connected to one of the terminal electrodes, a second dopant region of a second conduction type in the semiconductor layer, which is electrically connected to the other terminal electrode, a pn junction being formed between the first and second dopant regions, a dielectric layer on the back side between the semiconductor layer and the second terminal electrode, and the dielectric layer having an opening through which an electrical connection between the second terminal electrode and the first or second dopant region is passed. | 07-02-2015 |
Maximilian Roesch, St. Magdalen AT
Patent application number | Description | Published |
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20090218618 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING SAME - A semiconductor device and method. One embodiments provides a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material, a field electrode formed in lower portion of the trench, a cover comprising a second material above the field electrode, the second material being selectively etchable to the first isolating material, a gate dielectric on the sidewall in an upper portion of the trench and a gate electrode in the upper portion of the trench. | 09-03-2009 |
20120153386 | SEMICONDUCTOR COMPONENT WITH A SPACE SAVING EDGE STRUCTURE - A semiconductor component is disclosed. One embodiment includes a semiconductor body including a first semiconductor layer having at least one active component zone, a cell array with a plurality of trenches, and at least one cell array edge zone. The cell array edge zone is only arranged in an edge region of the cell array, adjoining at least one trench of the cell array, and being at least partially arranged below the at least one trench in the cell array. | 06-21-2012 |
20150048445 | Semiconductor Chip with Integrated Series Resistances - A semiconductor chip has a semiconductor body with a bottom side and a top side arranged distant from the bottom side in a vertical direction, an active and a non-active transistor region, a drift region formed in the semiconductor body, a contact terminal for externally contacting the semiconductor chip, and a plurality of transistor cells formed in the semiconductor body. Each of the transistor cells has a first electrode. Each of a plurality of connection lines electrically connects another one of the first electrodes to the contact terminal pad at a connecting location of the respective connection line. Each of the connection lines has a resistance section that is formed of at least one of: a locally reduced cross-sectional area of the connection line section; and a locally increased specific resistance. Each of the connecting locations and each of the resistance sections is arranged in the non-active transistor region. | 02-19-2015 |
20160079377 | Semiconductor Device with Current Sensor - A semiconductor device includes a semiconductor body. The semiconductor body includes a load transistor part and a sensor transistor part. A first source region of the load transistor part and a second source region of the sensor transistor part are electrically separated from each other. A common gate electrode in a common gate trench extends into the semiconductor body from a first surface. A first part of the common gate trench is in the load transistor part, and a second part of the common gate trench is in the sensor transistor part. A field electrode in a field electrode trench extends into the semiconductor body from the first surface. A maximum dimension of the field electrode trench parallel to the first surface is smaller than a depth of the field electrode trench. | 03-17-2016 |
20160104797 | Semiconductor Device and Method of Manufacturing a Semiconductor Device - A semiconductor device comprises a gate electrode in a trench in a semiconductor body. The gate electrode comprises a plurality of gate segments disposed along an extension direction of the trench, the gate segments being connected to neighboring gate segments by means of connection elements. A distance between adjacent gate segments is equal to or smaller than 0.5*L, wherein L denotes a length of each of the gate segments, the length being measured along the extension direction of the trench. | 04-14-2016 |
Maximilian Roesch, Villach AT
Patent application number | Description | Published |
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20090152624 | INTEGRATED CIRCUIT DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR THE PRODUCTION OF AN INTEGRATED CIRCUIT DEVICE - An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench. | 06-18-2009 |
20110076817 | INTEGRATED CIRCUIT DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR THE PRODUCTION OF AN INTEGRATED CIRCUIT DEVICE - An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench. | 03-31-2011 |
Maximilian Roesch, Magdalen AT
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20120025304 | Trench Semiconductor Device and Method of Manufacturing - A semiconductor device includes a semiconductor body including a trench with first and second opposing sidewalls. A first electrode is arranged in a lower portion of the trench and a second electrode in an upper portion of the trench. A dielectric structure is arranged in the trench, including a first portion between the electrodes. The first portion includes, in sequence along a lateral direction from the first sidewall to the second sidewall, a first part including a first dielectric material, a second part including a second dielectric material selectively etchable to the first dielectric material, a third part including the first dielectric material, the first dielectric material of the third part being continuously arranged along a vertical direction from a top side of the first electrode to a bottom side of the second electrode, a fourth part including the second dielectric material and a fifth part including the first dielectric material. | 02-02-2012 |
Maximillian Roesch, St. Magdalen AT
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20160056251 | SEMICONDUCTOR SWITCHING DEVICE INCLUDING CHARGE STORAGE STRUCTURE - A semiconductor switching device includes a first load terminal electrically connected to source zones of transistor cells. The source zones form first pn junctions with body zones. A second load terminal is electrically connected to a drain construction that forms second pn junctions with the body zones. Control structures, which include a control electrode and charge storage structures, directly adjoin the body zones. The control electrode controls a load current through the body zones. The charge storage structures insulate the control electrode from the body zones and contain a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load electrode. | 02-25-2016 |
Philippe Roesch, Aix En Provence FR
Patent application number | Description | Published |
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20080294305 | ROTORCRAFT CONTROL SYSTEM | 11-27-2008 |
20090321554 | FAST HYBRID HELICOPTER WITH LONG RANGE - A hybrid helicopter ( | 12-31-2009 |
20100219286 | FAST HYBRID HELICOPTER WITH LONG RANGE AND AN OPTIMIZED LIFT ROTOR - A hybrid helicopter ( | 09-02-2010 |
20100224720 | FAST HYBRID HELICOPTER WITH LONG RANGE WITH LONGITUDINAL TRIM CONTROL - A hybrid helicopter includes an airframe provided with a fuselage and a lift-producing surface together with stabilizer surfaces and a drive system including: | 09-09-2010 |
Yves Roesch, Munchhouse FR
Patent application number | Description | Published |
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20160082686 | MACHINE FOR THE CONTINUOUS MANUFACTURE OF TUBULAR BOX BODIES, NOTABLY BASED ON CARDBOARD OR THE LIKE - A manufacturing machine in which the pressing mechanism ( | 03-24-2016 |