Patent application number | Description | Published |
20090117465 | POSITIVE ELECTRODE AND LITHIUM ION SECONDARY BATTERY - A positive electrode includes a collector and a positive electrode mixture layer formed on the collector and containing a polyacrylonitrile based resin-containing binder and a positive electrode active material. The polyacrylonitrile in the positive electrode mixture layer is crosslinked and carbonized. | 05-07-2009 |
20110052984 | NEGATIVE ELECTRODE FOR NONAQUEOUS ELECTROLYTE SECONDARY CELL, METHOD OF MANUFACTURING THE SAME, AND NONAQUEOUS ELECTROLYTE SECONDARY CELL - A negative electrode for a nonaqueous electrolyte secondary cell, includes: a negative electrode active material layer containing a negative electrode active material, a polyvinylidene fluoride component including polyvinylidene fluoride and/or a derivative having polyvinylidene fluoride as a main chain, a styrene-butadiene component including a styrene-butadiene polymer and/or a derivative having a styrene-butadiene polymer as a main chain, a nonionic surfactant having an HLB of 10 to 15, and N-methylpyrrolidone; and a foil-shaped negative electrode current collector provided with the negative electrode active material layer on at least one principal surface of the collector. | 03-03-2011 |
20110300444 | ANODE FOR LITHIUM ION SECONDARY BATTERY, LITHIUM ION SECONDARY BATTERY, ELECTRIC POWER TOOL, ELECTRICAL VEHICLE, AND ELECTRIC POWER STORAGE SYSTEM - A lithium secondary battery that has high capacity and excellent cycle characteristics is provided. The lithium ion secondary battery includes a cathode, an anode, and an electrolyte. The anode has, on an anode current collector, an anode active material layer including Li | 12-08-2011 |
Patent application number | Description | Published |
20100220540 | SEMICONDUCTOR MEMORY DEVICE CAPABLE OF DRIVING NON-SELECTED WORD LINES TO FIRST AND SECOND POTENTIALS - A semiconductor device includes a word line drive circuit for resetting the word line by driving the word line connected to a memory cell and is constituted so as to switch a reset level of the word line drive circuit, which is set at the time of the reset operation of the word line, between a first potential such as a ground potential and a second potential such as a negative potential. Further, a semiconductor device including a memory cell array formed by arranging a plurality of memory cells and a word line reset level generating circuit for generating a negative potential makes it possible to vary the amount of a current supply of the word line reset level generating circuit when non-selected word lines are set to a negative potential by applying the output of the word line reset level generating circuit to the non-selected word lines, and varies the amount of the current supply of the negative potential in accordance with the operation of the memory cell array. Furthermore, in a semiconductor device including a plurality of power source circuits each having an oscillation circuit and a capacitor, for driving the capacitor by the oscillation signal outputted by the oscillation circuit, at least a part of these power source circuits shares in common the oscillation circuit, and different capacitors are driven by the oscillation signal outputted from the common oscillation circuit. | 09-02-2010 |
20100321983 | SEMICONDUCTOR MEMORY DEVICE CAPABLE OF DRIVING NON-SELECTED WORD LINES TO FIRST AND SECOND POTENTIALS - A semiconductor device includes a word line drive circuit for resetting the word line by driving the word line connected to a memory cell and is constituted so as to switch a reset level of the word line drive circuit, which is set at the time of the reset operation of the word line, between a first potential such as a ground potential and a second potential such as a negative potential. Further, a semiconductor device including a memory cell array formed by arranging a plurality of memory cells and a word line reset level generating circuit for generating a negative potential makes it possible to vary the amount of a current supply of the word line reset level generating circuit when non-selected word lines are set to a negative potential by applying the output of the word line reset level generating circuit to the non-selected word lines, and varies the amount of the current supply of the negative potential in accordance with the operation of the memory cell array. Furthermore, in a semiconductor device including a plurality of power source circuits each having an oscillation circuit and a capacitor, for driving the capacitor by the oscillation signal outputted by the oscillation circuit, at least a part of these power source circuits shares in common the oscillation circuit, and different capacitors are driven by the oscillation signal outputted from the common oscillation circuit. | 12-23-2010 |
Patent application number | Description | Published |
20090209463 | Hgf Precursor Protein Variant and Active Protein Thereof - An HGF precursor protein variant, in which a peptide structure comprises a sequence including a peptide chain X inserted between an α chain of HGF or a polypeptide where 1 to 20 amino-acid residues from the C-terminus of the α chain are deleted, and a β chain of HGF or a polypeptide where 1 to 20 amino-acid residues from the N-terminus of the β chain are deleted; wherein (i) the peptide chain X has an amino-acid sequence of at least two residues, (ii) the peptide chain X can be cleaved by a protease reaction or a chemical reaction, and (iii) a protein obtained by cleaving at least one site of the peptide chain X has HGF action. | 08-20-2009 |
20100168003 | Agent for Treating Polyglutamine Aggregation-Caused Disease or Suppressing Onset Thereof - The present invention discloses an agent for treating a polyglutamine aggregation-caused disease or suppressing its onset, which comprises, as an active ingredient, (1) (i) HGF protein, (ii) a partial peptide of HGF protein that is substantially equivalent in activity to HGF protein, or a salt of either of them, or | 07-01-2010 |
20110269944 | HGF PRECURSOR PROTEIN VARIANT AND ACTIVE PROTEIN THEREOF - An HGF precursor protein variant, in which a peptide structure comprises a sequence including a peptide chain X inserted between an α chain of HGF or a polypeptide where 1 to 20 amino-acid residues from the C-terminus of the α chain are deleted, and a β chain of HGF or a polypeptide where 1 to 20 amino-acid residues from the N-terminus of the β chain are deleted; wherein (i) the peptide chain X has an amino-acid sequence of at least two residues, (ii) the peptide chain X can be cleaved by a protease reaction or a chemical reaction, and (iii) a protein obtained by cleaving at least one site of the peptide chain X has HGF action. | 11-03-2011 |
Patent application number | Description | Published |
20090040850 | SEMICONDUCTOR MEMORY, TEST METHOD OF SEMICONDUCTOR MEMORY AND SYSTEM - An address switch circuit receives a row address signal supplied to a first address terminal group and a column address signal supplied to a second address terminal group. Further, the address switch circuit receives the row address signal supplied to the second address terminal group and thereafter receives the column address signal supplied to the second address terminal group and supplies the received row address signal and the received column address signal to the row decoder and the column decoder during a second operation mode. The number of semiconductor memories that are tested at once can be increased by executing an operation test of the semiconductor memories in the second operation mode. In addition, it becomes possible to test a semiconductor memory using test assets for other semiconductor memories. Consequently, the test efficiency can be improved, and the test cost can be reduced. | 02-12-2009 |
20090077432 | Semiconductor Memory Device - Disclosed is a semiconductor memory device capable of arbitrarily setting an upper limit of the number of error corrections during a test operation. The semiconductor memory device has a counter, a register, and a comparison circuit. The counter counts the number of error corrections. The register, when an upper limit setting signal (in the case shown in FIG. | 03-19-2009 |
20090190418 | SEMICONDUCTOR MEMORY, METHOD OF CONTROLLING THE SEMICONDUCTOR MEMORY, AND MEMORY SYSTEM - A semiconductor memory comprising an address transition detection circuit for detecting a transition of an address and outputs an address detection signal; an address input circuit for inputting an input address based upon the address detection signal; a command judgment circuit for decoding a command signal input and outputting a command judgment signal; a redundancy circuit for making a redundancy judgment based upon a redundancy judgment signal indicating timing of a redundancy judgment, wherein the redundancy circuit includes a redundancy judgment speed-up circuit for controlling an output of the redundancy judgment signal based upon a predetermined command signal. | 07-30-2009 |
20090190423 | SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF - A semiconductor memory is provided which performs redundancy on a memory cell by a given bit unit, the semiconductor memory includes: a comparator circuit that compares an input address and a redundancy address; a judgment circuit that judges whether to perform the redundancy based on a compared result, wherein the judgment circuit outputs a plurality of redundancy judgment signals that indicates whether to perform redundancy for each portion obtained by dividing the given bit unit by n which is an integer equal to or greater than two. | 07-30-2009 |
20120030527 | SEMICONDUCTOR MEMORY DEVICE - Disclosed is a semiconductor memory device capable of arbitrarily setting an upper limit of the number of error corrections during a test operation. The semiconductor memory device has a counter, a register, and a comparison circuit. The counter counts the number of error corrections. The register, when an upper limit setting signal (in the case shown in FIG. | 02-02-2012 |
Patent application number | Description | Published |
20080235981 | METHOD AND APPARATUS FOR DRYING FILM AND SOLUTION CASTING METHOD - In a pin tenter, a wet film is conveyed and dried in a state that edges of the wet film are pierced by pins. The plurality of pins are fixed to a pin plate. The pin plate is supported by a pin carrier. The pin carrier is disposed between rails. Movement of the pin carrier is guided by the rails. Nitrogen gas is supplied through a nozzle to the inside of a rail cover in a gas purge area, and thus the inside of the rail cover is pressurized. Atmospheric gas containing solvent gas in the pin tenter is prevented from entering the inside of the rail cover. Accordingly, precipitation of additives and the like on the rails and the pin carrier is eliminated. A suction device sucks nitrogen gas together with foreign substances such as dust from the inside of the pressurized rail cover. | 10-02-2008 |
20080235982 | METHOD AND APPARATUS FOR DRYING FILM AND SOLUTION CASTING METHOD - In a pin tenter, a wet film is conveyed and dried in a state that edges of the wet film are pierced by pins. The plurality of pins are fixed to a pin plate. The pin plate is supported by a pin carrier. The pin carrier is disposed between rails. Movement of the pin carrier is guided by the rails. In a steam cleaning area, foreign substances adhered to the pins, the pin plates, and the pin carriers are removed by blowing steam. In a jet gas cleaning area, residual foreign substances and residual water content after the steam cleaning are blown off and removed by blowing nitrogen gas. | 10-02-2008 |
20080235983 | METHOD AND APPARATUS FOR DRYING FILM AND SOLUTION CASTING METHOD - In a pin tenter, a wet film is conveyed and dried in a state that side edges of the wet film are pierced by pins. The plurality of pins are fixed to a pin plate. The pin plate is supported by a pin carrier. The pin carrier is disposed between rails. Movement of the pin carrier is guided by the rails. In a steam cleaning area, steam is blown onto the pins, the pin plates, the pin carriers, and the like so as to remove foreign substances adhered thereto. In a jet gas cleaning area, nitrogen gas blows off residual foreign substances and residual water content remained from the steam cleaning. | 10-02-2008 |