Patent application number | Description | Published |
20130193171 | SYSTEM FOR STEAMING CLOTHES - A system for steaming clothes is disclosed. A steamer is connected through a hose to a human torso device. The human torso device includes a plurality of holes, wherein a plurality of steam air jets are located in the plurality of air holes. This human torso device is configured to be encapsulated in an article of clothing, where the human torso device is configured to receive steam from the steamer then utilize the plurality of steam air jets to simultaneously expel the steam through the plurality of air holes to entirely steam an entire portion of the article of clothing. | 08-01-2013 |
20150045191 | MEDICINE BALL SYSTEM - A medicine ball system is disclosed. The system includes a medicine ball and a closure cover configured to receive the medicine ball, where the closure cover includes weighted material that enables a person to simply increase the weight of the medicine ball without having to change to another medicine ball. | 02-12-2015 |
20150101221 | Detachable Steaming Component Connected to a Steaming System - A system for steaming clothes is disclosed. A steamer is connected through a hose to a steaming component having a plurality of connecting tubes, where the steaming component having the plurality of connecting tubes, where the plurality of connecting tubes connects to a plurality of detachable ventilating tubes, where the plurality of the detachable ventilating tubes have a plurality of holes to expel steam. The steaming component with the plurality of connecting tubes are configured to hold an article of clothing that fits around the steaming component and the plurality of connecting tubes, where the steaming component is configured to receive the steam from the steamer to expel the steam through the plurality of holes to entirely steam an entire portion of the article of clothing. | 04-16-2015 |
Patent application number | Description | Published |
20100143258 | TUMOR MARGIN IMAGING AGENTS - In one aspect, the present invention provides a functionalized monodisperse polylysine comprising a linear monodisperse polylysine chain comprising constituent lysine monomer residues containing appended C | 06-10-2010 |
20100310457 | IMAGING OF MYELIN BASIC PROTEIN - The present invention relates to methods for myelin basic protein detection comprises identifying a subject at risk of or diagnosed with a myelin-associated neuropathy, parenterally administering to the subject the agent, and determining myelination in the subject by detecting binding to myelin basic protein. Methods for the detection of myelin and a quantitative measurement of its local concentration in a sample using an agent with specific binding to myelin basic protein are also provided as is a kit containing the agent or its derivatives for use in detecting myelin basic protein | 12-09-2010 |
20120114563 | OPTICAL IMAGING AGENTS - The present invention relates to a method of in vivo optical imaging, of the margins around tumours, which comprises an optical imaging contrast agent. The optical imaging agents comprise conjugates of near-infrared dyes with synthetic polyethylene glycol (PEG) polymers having a molecular weight in the range 15-45 kDa. Also disclosed are optical imaging contrast agents, pharmaceutical compositions and kits. | 05-10-2012 |
20130195756 | 99mTc IMAGING AGENTS AND METHODS OF USE - An embodiment of the invention comprises a ligand of Formula I | 08-01-2013 |
20130261311 | BIOTIN STANNANE FOR HPLC-FREE RADIOIODINATION - The present teachings provide methods that enable the preparation and purification of radioiodinated vectors without the need for HPLC purification, as well as novel precursors which include biotin-like substituents useful in such methods. | 10-03-2013 |
20140065065 | 99mTc IMAGING AGENTS AND METHODS OF USE - An embodiment of the invention comprises method of imaging a target site comprising administrating ligand of Formula I complexed to | 03-06-2014 |
Patent application number | Description | Published |
20090142891 | MASKLESS STRESS MEMORIZATION TECHNIQUE FOR CMOS DEVICES - In one embodiment, the present invention provides a method of manufacturing a semiconducting device that includes providing a silicon containing substrate having PFET device and NFET device, wherein the NFET device includes an amorphous silicon containing region; depositing a tensile strain silicon nitride layer atop the NFET device and the PFET device, wherein the silicon nitride tensile strain layer induces a tensile strain in a channel of the NFET device region; annealing to crystallize the amorphous silicon containing region, wherein the tensile strain silicon nitride layer positioned atop the PFET device confines oxygen within a channel positioned within the silicon containing substrate underlying the PFET device, wherein the oxygen within the channel shifts a threshold voltage of the PFET device towards a valence band of silicon of the silicon containing substrate; and removing the tensile strain silicon nitride layer. | 06-04-2009 |
20090152637 | PFET WITH TAILORED DIELECTRIC AND RELATED METHODS AND INTEGRATED CIRCUIT - A PFET having tailored dielectric constituted in part by an NFET threshold voltage (Vt) work function tuning layer in a gate stack thereof, related methods and integrated circuit are disclosed. In one embodiment, the PFET includes an n-type doped silicon well (N-well), a gate stack including: a doped band engineered PFET threshold voltage (Vt) work function tuning layer over the N-well; a tailored dielectric layer over the doped band engineered PFET Vt work function tuning layer, the tailored dielectric layer constituted by a high dielectric constant layer over the doped band engineered PFET Vt work function tuning layer and an n-type field effect transistor (NFET) threshold voltage (Vt) work function tuning layer over the high dielectric constant layer; and a metal over the NFET Vt work function tuning layer. | 06-18-2009 |
20090152651 | GATE STACK STRUCTURE WITH OXYGEN GETTERING LAYER - A transistor has a channel region in a substrate and source and drain regions in the substrate on opposite sides of the channel region. A gate stack is formed on the substrate above the channel region. This gate stack comprises an interface layer contacting the channel region of the substrate, and a high-k dielectric layer (having a dielectric constant above 4.0) contacting (on) the interface layer. A Nitrogen rich first metal Nitride layer contacts (is on) the dielectric layer, and a metal rich second metal Nitride layer contacts (is on) the first metal Nitride layer. Finally, a Polysilicon cap contacts (is on) the second metal Nitride layer. | 06-18-2009 |
20090294801 | METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PFET, AND RELATED STRUCTURE - Methods of integrating reverse embedded silicon germanium (SiGe) on an NFET and SiGe channel on a PFET, and a related structure are disclosed. One method may include providing a substrate including an NFET area and a PFET area; performing a single epitaxial growth of a silicon germanium (SiGe) layer over the substrate; forming an NFET in the NFET area, the NFET including a SiGe plug in a channel thereof formed from the SiGe layer; and forming a PFET in the PFET area, the PFET including a SiGe channel formed from the SiGe layer. As an option, the SiGe layer over the PFET area may be thinned. | 12-03-2009 |
20120228716 | METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PFET, AND RELATED STRUCTURE - A structure including an NFET having an embedded silicon germanium (SiGe) plug in a channel of the NFET; a PFET having a SiGe channel; and a trench isolation between the NFET and the PFET, wherein the NFET and the PFET are devoid of SiGe epitaxial growth edge effects. | 09-13-2012 |
Patent application number | Description | Published |
20110274267 | DETERMINING HDCP SOURCE KSV SUPPORT - Presented is a method for determining the maximum number of key selection vectors (KSVs) supported by an HDCP source. The method includes transmitting a number of KSVs to the HDCP source, determining whether the HDCP source has entered a failure mode in response to the transmitted number of KSVs, increasing or decreasing the number of KSVs in response to the HDCP source not entering or entering the failure mode, transmitting the increased or decreased number of KSVs to the HDCP source, determining whether the HDCP source has entered the failure mode in response to the transmitted increased or decreased number of KSVs, and repeating the increasing, decreasing, and determining steps until the difference between a lowest number of transmitted KSVs resulting in the HDCP source entering the failure mode and a highest number of transmitted KSVs resulting in the HDCP source not entering the failure mode is one. | 11-10-2011 |
20120008765 | DETERMINING HDCP SOURCE KSV SUPPORT - Presented is a method for determining the maximum number of key selection vectors (KSVs) supported by an HDCP source. The method includes providing a number of KSVs to the HDCP source, determining whether the HDCP source has entered a failure mode in response to the provided number of KSVs, increasing or decreasing the number of KSVs in response to the HDCP source not entering or entering the failure mode, providing the increased or decreased number of KSVs to the HDCP source, determining whether the HDCP source has entered the failure mode in response to the provided increased or decreased number of KSVs, and repeating the increasing, decreasing, and determining steps until the difference between a lowest number of provided KSVs resulting in the HDCP source entering the failure mode and a highest number of provided KSVs resulting in the HDCP source not entering the failure mode is one. | 01-12-2012 |
Patent application number | Description | Published |
20110073471 | METHOD AND APPARATUS FOR CATHODIC ARC ION PLASMA DEPOSITION - A method and apparatus for depositing a coating material on a surface of a substrate by an ion plasma deposition process using a hollow cathode is disclosed. The cathode may be a substantially cylindrical hollow cathode. A plasma arc is formed on the outer circumference of the cathode to remove coating material from the cathode, which is then deposited on a surface of a substrate. An internal arc drive magnet is contained within the hollow bore of the cathode and cooling is provided to the magnet during operation. | 03-31-2011 |
20110193338 | THREADED METAL PIPE - A threaded metal pipe is provided which comprises a metal pipe having an inner surface, an outer surface, a first end portion and a second end portion; a metal sleeve layer disposed on an outer surface of at least one of the first end portion and the second end portion, said metal sleeve layer and said end portion forming a multilayer structure having an inner surface and an outer surface; and a plurality of pipe threads inscribed in at least a portion of the multilayer structure. The threaded metal pipe provided by the present invention may be used advantageously as, inter alia, oil petroleum production risers in which the pipe segment wall thicknesses are minimized. | 08-11-2011 |
20130047394 | SOLID STATE SYSTEM AND METHOD FOR REFURBISHMENT OF FORGED COMPONENTS - A system and method for refurbishing forged components. The system includes an identification subsystem for identifying a forged component for refurbishment, a removal subsystem for removing portions of the forged component, and a rebuilding subsystem for rebuilding the forged component, the rebuilding subsystem including an assembly for adding a non-molten material to the forged component. | 02-28-2013 |
20150060403 | METHODS FOR MANUFACTURING AN ADDITIVELY MANUFACTURED FUEL CONTACTING COMPONENT TO FACILITATE REDUCING COKE FORMATION - A method for manufacturing a fuel contacting component that facilitates reducing coke formation on at least one surface of the fuel contacting component is disclosed herein. The method includes applying a slurry composition including a powder including aluminum to the component surface, wherein the fuel contacting component is formed by an additive manufacturing process. The slurry composition is heat treated to diffuse the aluminum into the component surface. The heat treatment comprises forming a diffusion aluminide coating on the component surface, wherein the diffusion coating comprises a diffusion sublayer formed on the component surface and an additive sublayer formed on the diffusion sublayer. The method further comprises removing the additive sublayer of the diffusion aluminide coating with at least one aqueous solution such that the diffusion sublayer and the component surface are substantially unaffected, wherein the diffusion layer facilitates preventing coke formation on component surface. | 03-05-2015 |