Patent application number | Description | Published |
20090203218 | PLASMA ETCHING METHOD AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching method includes etching an etching target layer formed on a substrate to be processed by a plasma of a processing gas by using an ArF photoresist as a mask. The etching target layer is a silicon nitride layer or silicon oxide layer, and the processing gas contains at least a CF | 08-13-2009 |
20090203219 | PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching method includes etching a silicon layer formed on a substrate to be processed through a patterned mask layer by using a plasma of a processing gas. The processing gas contains at least a CF | 08-13-2009 |
20090206053 | PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching method etching an organic underlayer film formed on a target substrate by using a plasma of a processing gas via a pattered mask layer formed on the underlayer film. The processing gas includes a gaseous mixture of an oxygen-containing gas and a sulfur-containing gas not having oxygen. The oxygen-containing gas is one of O | 08-20-2009 |
20090206058 | PLASMA PROCESSING APPARATUS AND METHOD, AND STORAGE MEDIUM - A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases. | 08-20-2009 |
20090242127 | PLASMA ETCHING APPARATUS AND METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching apparatus includes a processing vessel; a lower electrode on which a target substrate is mounted in the processing vessel; an upper electrode disposed in the processing vessel to face the lower electrode in parallel; a processing gas supply unit configured to supply a processing gas into a processing space between the upper and the lower electrode; a first radio frequency power supply unit configured to apply, to the lower electrode, a first radio frequency power for generating plasma of the processing gas; a focus ring covering a top surface peripheral portion of the lower electrode protruding toward a radial outside of the substrate; a DC power supply configured to output a variable DC voltage; and a DC voltage supply network that connects the DC power supply to either one of the focus ring and the upper electrode or both depending on processing conditions of plasma etching. | 10-01-2009 |
20090242515 | PLASMA PROCESSING APPARATUS AND PLASMA ETCHING METHOD - A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing chamber and a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode. A radio frequency (RF) power supply unit is also provide to apply a RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge. A first and a second DC power supply unit are provided to apply a first and a second variable DC voltage to the inner upper electrode, respectively. | 10-01-2009 |
20090242516 | PLASMA ETCHING METHOD AND COMPUTER READABLE STORAGE MEDIUM - A plasma etching method includes disposing a first electrode and a second electrode to face each other; preparing a part in the processing chamber; supporting a substrate; vacuum-evacuating the processing chamber; supplying an etching gas into a processing space between the first electrode and the second electrode; generating a plasma of the etching gas in the processing space by applying a radio wave power to the first electrode or the second electrode; and etching a film to be processed on a surface of the substrate by using the plasma. Further, a DC voltage is applied to the part during the etching process, the part being disposed away from the substrate and being etched by reaction with reactant species in the plasma. | 10-01-2009 |
20090275207 | PLASMA PROCESSING METHOD AND COMPUTER READABLE STORAGE MEDIUM - A plasma etching method includes disposing first electrode and second electrodes; preparing a part in a processing chamber; supporting a substrate by the second electrode to face the first electrode; vacuum-evacuating the processing chamber; supplying a first processing gas containing an etchant gas into a processing space between the first electrode and the second electrode; generating a plasma of the first processing gas in the processing space by applying a radio frequency power to the first electrode or the second electrode; and etching a film on the substrate by using the plasma. Further, a resist modification process includes vacuum-evacuating the processing chamber; supplying a second processing gas into the processing space; generating a plasma; and applying a negative DC voltage to the part, the part being disposed away from the substrate in the processing chamber and injecting electrons discharged from the part into the resist pattern on the substrate. | 11-05-2009 |
20100062607 | DRY ETCHING METHOD - In a dry etching method, a silicon substrate is mounted on an electrode arranged in a processing chamber; a plasma is generated by discharging an etching gas in the processing chamber; a radio frequency power for attracting ions from the plasma is supplied to the electrode; and the silicon substrate is etched by the plasma. A pressure inside the processing chamber is set as 1 mTorr to 100 mTorr, and the etching is carried out while satisfying the following equation: yM≧2.84*10 | 03-11-2010 |
20100068888 | DRY ETCHING METHOD - A dry etching method includes: mounting a silicon substrate on an electrode arranged in a processing chamber; generating a plasma by discharging an etching gas in the processing chamber; supplying to the electrode a radio frequency power for attracting ions from the plasma; and etching the silicon substrate by the plasma by using an inorganic mask containing silicon as an etching mask. An absolute value of a self-bias voltage generated in the electrode is equal to or smaller than about 280 V, and wherein the etching is carried out while satisfying the following equation: y≦0.0114x+0.171, where x is a pressure inside the processing chamber and y is a power density of the radio frequency power per unit area of the electrode. | 03-18-2010 |
20100081287 | DRY ETCHING METHOD - A dry etching method includes: mounting a silicon substrate in a processing chamber; generating a plasma by discharging an etching gas in the processing chamber; and etching the silicon substrate by the plasma. The etching gas is a gaseous mixture including a Cl | 04-01-2010 |
20100093178 | Si ETCHING METHOD - A Si etching method includes: arranging a silicon substrate or a substrate having a silicon layer in a processing chamber; generating a plasma of an etching gas in the processing chamber; and etching the silicon substrate by the plasma. The etching gas is a gaseous mixture including a Br | 04-15-2010 |
20100216314 | SUBSTRATE PROCESSING METHOD - A substrate processing method that processes a substrate including a processing target layer, an intermediate layer, and a mask layer as stacked in that order. The intermediate layer includes an Si-ARC (Si-containing Anti-Reflection Coating) film and the mask layer has an opening exposing a part of the Si-ARC. The substrate processing method includes a shrink etching step during which an opening width reduction process and an etching process are performed concurrently. In the opening width reduction process, deposits are formed on a sidewall surface of the opening of the mask layer by a plasma generated from a gaseous mixture of an anisotropic etching gas and one of a depositive gas and H | 08-26-2010 |
20110240599 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing apparatus for generating a plasma in a plasma processing space in a processing chamber and plasma-processing a target object includes a plasma-exciting high frequency power supply for applying a plasma-exciting high frequency power. Further, the plasma processing apparatus includes at least one of a potential-controlling high frequency power supply for applying a potential-controlling high frequency power having a frequency lower than that of the plasma-exciting high frequency power and a DC power supply for applying a DC voltage; and a mounting table for mounting thereon a target object. Furthermore, the plasma processing apparatus includes an auxiliary electrode, provided at a position outer side of the target object mounted on the mounting table while facing the mounting table, connected to at least one of the potential-controlling high frequency power supply and the DC power supply. | 10-06-2011 |
20120000886 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - The substrate processing apparatus includes a process chamber which accommodates a wafer and performs a plasma etching process on the wafer, an exhaust chamber which communicates with the process chamber, an exhaust plate which divides the process chamber from the exhaust chamber and prevents plasma inside the process chamber from leaking into the exhaust chamber, and an upper electrode plate arranged inside the exhaust chamber, wherein the exhaust plate includes a plurality of through holes, and the upper electrode plate includes a plurality of through holes, is capable of contacting the exhaust plate in parallel, and is capable of being spaced apart from the exhaust plate. | 01-05-2012 |