Patent application number | Description | Published |
20090206058 | PLASMA PROCESSING APPARATUS AND METHOD, AND STORAGE MEDIUM - A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases. | 08-20-2009 |
20090242127 | PLASMA ETCHING APPARATUS AND METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching apparatus includes a processing vessel; a lower electrode on which a target substrate is mounted in the processing vessel; an upper electrode disposed in the processing vessel to face the lower electrode in parallel; a processing gas supply unit configured to supply a processing gas into a processing space between the upper and the lower electrode; a first radio frequency power supply unit configured to apply, to the lower electrode, a first radio frequency power for generating plasma of the processing gas; a focus ring covering a top surface peripheral portion of the lower electrode protruding toward a radial outside of the substrate; a DC power supply configured to output a variable DC voltage; and a DC voltage supply network that connects the DC power supply to either one of the focus ring and the upper electrode or both depending on processing conditions of plasma etching. | 10-01-2009 |
20090242515 | PLASMA PROCESSING APPARATUS AND PLASMA ETCHING METHOD - A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing chamber and a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode. A radio frequency (RF) power supply unit is also provide to apply a RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge. A first and a second DC power supply unit are provided to apply a first and a second variable DC voltage to the inner upper electrode, respectively. | 10-01-2009 |
20090242516 | PLASMA ETCHING METHOD AND COMPUTER READABLE STORAGE MEDIUM - A plasma etching method includes disposing a first electrode and a second electrode to face each other; preparing a part in the processing chamber; supporting a substrate; vacuum-evacuating the processing chamber; supplying an etching gas into a processing space between the first electrode and the second electrode; generating a plasma of the etching gas in the processing space by applying a radio wave power to the first electrode or the second electrode; and etching a film to be processed on a surface of the substrate by using the plasma. Further, a DC voltage is applied to the part during the etching process, the part being disposed away from the substrate and being etched by reaction with reactant species in the plasma. | 10-01-2009 |
20100202093 | TRANSFER CHAMBER AND METHOD FOR PREVENTING ADHESION OF PARTICLE - A transfer chamber is provided between a processing unit for performing a predetermined process on a target substrate to be processed in a depressurized environment and an atmospheric maintaining unit for maintaining the target substrate in an atmospheric environment to transfer the target substrate therebetween. The transfer chamber includes a chamber main body for accommodating the target substrate, a gas exhaust unit for exhausting the chamber main body to set the chamber main body to the depressurized environment, and a gas supply unit for supplying a predetermined gas to the chamber main body to set the chamber main body in the atmospheric environment. Further, in the transfer chamber, an ionization unit is provided outside the chamber main body, for ionizing the predetermined gas and an ionized gas supply unit is provided to supply the ionized gas generated by the ionization unit to the chamber main body. | 08-12-2010 |
20100214712 | METHOD FOR CHARGE-NEUTRALIZING TARGET SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a chamber; and a mounting table having an electrostatic attraction portion for electrostatically attracting a target substrate; a heat transfer gas supply system for injecting a heat transfer gas from the electrostatic attraction portion to the target substrate; and a separating unit by which the target substrate is separated from the electrostatic attraction portion. A method for charge-neutralizing a target substrate in the apparatus includes: supplying an ionized gas from the heat transfer gas supply system to the target substrate. The apparatus includes an irradiation unit for irradiating a soft X-ray or an UV beam toward the chamber. In the supplying of the ionized gas, the target substrate is separated from the electrostatic attraction portion by the separating unit, and a soft X-ray or an UV beam is irradiated from the irradiation unit toward a space between the target substrate and the electrostatic attraction portion. | 08-26-2010 |
20100236405 | SUBSTRATE TRANSFER DEVICE AND SUBSTRATE TRANSFER METHOD - A substrate transfer device includes an atmosphere introduction unit and an atmosphere exhaust unit provided at a top and a bottom portion of a main body of the device, respectively; and a substrate transfer mechanism provided between the atmosphere introduction unit and the atmosphere exhaust unit. The substrate transfer device further includes a downward flow forming unit provided, adjacent to the atmosphere introduction unit, to allow an atmosphere to be introduced through the atmosphere introduction unit and to downwardly flow through the substrate transfer mechanism and be exhausted through the atmosphere exhaust unit; and a gas ionizing unit for ionizing the atmosphere and a particle collecting unit for collecting particles included in the atmosphere, the gas ionizing unit and the particle collecting unit being sequentially provided in the direction in which the atmosphere downwardly flows, between the downward flow forming unit and the substrate transfer mechanism. | 09-23-2010 |
20100236406 | SUBSTRATE PROCESSING APPARATUS AND EXHAUST METHOD THEREFOR - A substrate processing apparatus includes a processing chamber for accommodating therein a processing target substrate; a gas exhaust path through which a gas inside the processing chamber is exhausted; one or more exhaust pumps provided in the gas exhaust path; and a scrubber for collecting harmful components from an exhaust gas. The apparatus further includes an ionized gas supply unit for supplying to the gas exhaust path an ionized gas for neutralizing charged particles included in the exhaust gas flowing therethrough. | 09-23-2010 |
20120029863 | PARTICLE DISTRIBUTION ANALYSIS METHOD FOR COMPUTER READABLE STORAGE MEDIUM FOR STORING PROGRAM FOR EXECUTING THE METHOD - There is provided a support method for a particle distribution analysis for a substrate. In the support method, histogram data of inter-particle distances are created for all particles on a target substrate subjected to the particle distribution analysis from particle coordinate data of the target substrate. Further, histogram data of inter-particle distances are created for multiple virtual substrates each having the same number of randomly distributed particles as the particles on the target substrate. Based on a difference between the histogram data of the target substrate and the histogram data of each of the virtual substrates, determination data are created by quantifying a distance between the histogram data of the target substrate and the histogram data of the multiple virtual substrates, and the determination data are displayed on a display unit. | 02-02-2012 |