Neishi, JP
Koji Neishi, Nirasaki-Shi JP
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20120219724 | METHOD FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING MANGANESE OXIDE FILM, AND COMPUTER-READABLE STORAGE MEDIUM - In a method for forming a metal oxide film, by which excellent adhesion between the film and Cu can be provided, a gas containing an organometallic compound is supplied to a base, and the metal oxide film is formed on the base. After forming the metal oxide film on the base by supplying the organometallic compound to the base, the metal oxide film is exposed to the oxygen-containing gas or oxygen-containing plasma in the final step of the process of forming the metal oxide film. | 08-30-2012 |
Koji Neishi, Miyagi-Ken JP
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20110049718 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, ELECTRONIC INSTRUMENT, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM - When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess. | 03-03-2011 |
Koji Neishi, Miyagi JP
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20100233876 | FILM FORMING APPARATUS, FILM FORMING METHOD, COMPUTER PROGRAM AND STORAGE MEDIUM - In a film forming method, a substrate is first loaded into a vacuum-evacuable processing chamber. At least a transition metal-containing source gas and a reduction gas are supplied into the processing chamber, and the substrate is heated. Then, a thin film is formed in a recess in the surface of the substrate by heat treatment. Accordingly, the surface recess of the substrate can be filled with a copper film. | 09-16-2010 |
Koji Neishi, Sendai-Shi JP
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20100112806 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR MANUFACTURING APPARATUS AND STORAGE MEDIUM - A seed layer is formed on a surface of an insulating film and along a recess of the insulating film, and after a copper wiring is buried in the recess, a barrier film is formed, and an excessive metal is removed from the wiring. On a surface of a copper lower layer conductive path exposed at the bottom of the recess, a natural oxide of the copper is reduced or removed. On a substrate from which the natural oxide is reduced or removed, the seed layer, composed of a self-forming barrier metal having oxidative tendency higher than that of copper or an alloy of such metal and copper, is formed. The substrate is heated after burying copper in the recess. Thus, a barrier layer is formed by oxidizing the self-forming barrier metal. An excessive portion of the self-forming barrier metal is deposited on a surface of the buried copper. | 05-06-2010 |
20100140802 | FILM FORMING METHOD AND FILM FORMING APPARATUS - On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated. | 06-10-2010 |
20120025380 | MANGANESE OXIDE FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C. | 02-02-2012 |
20120135612 | FILM FORMING METHOD, PRETREATMENT DEVICE, AND PROCESSING SYSTEM - A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant. | 05-31-2012 |
Koji Neishi, Fukuoka-Shi JP
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20090101239 | Method for processing metal body and apparatus for processing metal body - The present invention provides a method for processing a metal body which can turn a metal structure of the metal body into a finer grain structure thus obtaining the high strength and the high ductility. In a method or an apparatus for processing a metal body which turns the metal structure of the metal body into the finer grain structure by forming a low deformation resistance region where the deformation resistance is locally lowered in the metal body and by deforming the low deformation resistance region by shearing, using a non-low deformation resistance region forming means which forms a non-low deformation resistance region by increasing the deformation resistance which is lowered in the low deformation resistance region, the non-low deformation resistance region is formed along the low deformation resistance region. | 04-23-2009 |
20090102104 | Method for processing metal body and apparatus for processing metal body - The present invention provides a method for processing a metal body which can turn a metal structure of the metal body into a finer grain structure thus obtaining the high strength and the high ductility. In a method or an apparatus for processing a metal body which turns the metal structure of the metal body into the finer grain structure by forming a low deformation resistance region where the deformation resistance is locally lowered in the metal body and by deforming the low deformation resistance region by shearing, using a non-low deformation resistance region forming means which forms a non-low deformation resistance region by increasing the deformation resistance which is lowered in the low deformation resistance region, the non-low deformation resistance region is formed along the low deformation resistance region. | 04-23-2009 |
Koji Neishi, Nirasaki City JP
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20150214429 | METHOD FOR MANUFACTURING ROD-TYPE LIGHT EMITTING DEVICE AND ROD-TYPE LIGHT EMITTING DEVICE - There is provided a method for manufacturing a rod-type light emitting device, which includes: forming a rod having lateral surfaces and an upper surface on a GaN layer of a first conductivity-type, the rod being made of a GaN of the first conductivity-type; selectively growing a high-resistivity layer on the upper surface of the rod; forming a multi-quantum well layer to cover the lateral surfaces and the upper surface of the rod and the high-resistivity layer; and forming a GaN layer of a second conductivity-type to cover the multi-quantum well layer. | 07-30-2015 |
Koji Neishi, Tsukuba City JP
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20150214423 | METHOD FOR MANUFACTURING OPTICAL DEVICE AND OPTICAL DEVICE - A method for manufacturing an optical device includes forming a mask on main surface of a first GaN layer such that the mask has one or more openings in first region on the main surface of the first layer, selectively growing first GaN in the opening such that core including the first GaN is formed on exposed portion of the first layer, forming an active layer on the core such that active region is formed, forming a second GaN layer on the active region, removing a portion of the mask covering second region, forming a first electrode in the second region on the first layer, forming a second electrode covering the second layer and extending onto the mask in third region on the first layer, forming a first pad on the first electrode, and forming a second pad in a pad-forming region of the second electrode in the third region. | 07-30-2015 |
Kouji Neishi, Sendai JP
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20110057317 | Contact plug structure, semiconductor device, and method for forming contact plug - A contact plug structure formed on a contact hole of an insulating layer of a semiconductor device includes a metal silicide layer formed on a bottom part of the contact hole of the insulating layer, a manganese oxide layer formed on the metal silicide layer in the contact hole, and a buried copper formed on the manganese oxide layer which substantially fills the contact hole. | 03-10-2011 |
Yutaka Neishi, Tokyo JP
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20140322066 | ROLLED STEEL BAR FOR HOT FORGING - A rolled steel bar has a composition consisting, by mass percent, of C: 0.27 to 0.37%, Si: 0.30 to 0.75%, Mn: 1.00 to 1.45%, S: 0.008% or more and less than 0.030%, Cr: 0.05 to 0.30%, Al: 0.005 to 0.050%, V: 0.200 to 0.320%, and N: 0.0080 to 0.0200%, the balance being Fe and impurities. The contents of P, Ti and O in the impurities are, by mass percent, P: 0.030% or less, Ti: 0.0040% or less, and O: 0.0020% or less. Y1 expressed by the formula <1> is 1.05 to 1.18. | 10-30-2014 |
20150034049 | ROLLED STEEL BAR FOR HOT FORGING, HOT-FORGED SECTION MATERIAL, AND COMMON RAIL AND METHOD FOR PRODUCING THE SAME - A rolled steel bar for hot forging consisting, by mass percent, of C: 0.25-0.50%, Si: 0.40-1.0%, Mn: 1.0-1.6%, S: 0.005-0.035%, Al: 0.005-0.050%, V: 0.10-0.30%, and N: 0.005-0.030%, and the balance of Fe and impurities, i.e., P: 0.035% or less and O: 0.0030% or less, wherein Fn1=C+Si/10+Mn/5+5Cr/22+1.65V−5S/7 is 0.90 to 1.20. The predicted maximum width of nonmetallic inclusions at the time when a cumulative distribution function obtained by extreme value statistical processing by taking the width of nonmetallic inclusion in an R | 02-05-2015 |
Yutaka Neishi, Osaka JP
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20120085465 | CARBURIZED COMPONENT AND MANUFACTURING METHOD - A carburized component with improved fatigue strength has a base steel containing, by mass %, C: 0.15-0.25%, Si: 0.03-0.50%, Mn: more than 0.60% and not more than 1.5%, P≦0.015%, S: 0.006-0.030%, Cr: 0.05-2.0%, Al≦0.10%, N≦0.03%, and O≦0.0020%, and optionally at least one element selected from Mo, Cu, Ni, B, Ti, Nb and V, the balance being Fe and impurities. A surface hardened layer portion satisfies: (a) average carbon concentration in the region from the outermost surface to a point of 0.2 mm depth of 0.35-0.60 mass %, (b) surface roughness Rz≦15 μm, and (c) σr(0)≦-800 MPa, σr(100)≦-800 MPa, and residual stress intensity index Ir≦80000, wherein Ir is calculated by [Ir=∫|σr(y)|dy], where y μm is the depth from the outermost surface and σr(y) is the residual stress for the points from the outermost surface to a depth of 100 μm with the range of y from 0 to 100 (μm). | 04-12-2012 |
Yuzo Neishi, Suwa JP
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20080224331 | ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An electronic device includes: a semiconductor chip that includes an integrated circuit, a plurality of electrodes electrically connected to the integrated circuit, and a passivation film formed in a manner that at least a portion of each of the plurality of electrodes is exposed; a resin layer that is formed on the passivation film; a plurality of wirings, each of the plurality of wirings extending from a top surface of each of the plurality of electrodes to a top surface of the resin layer and electrically connected to each of the plurality of electrodes, respectively; a wiring substrate that has a wiring pattern opposing to and electrically connected to portions of the plurality of wirings above the resin layer; and a hardened adhesive resin that is placed between the semiconductor chip and the wiring substrate, wherein the adhesive resin internally has a residual stress that is generated by contraction at the time of hardening the adhesive resin, and a portion of the adhesive resin is disposed between a portion of the resin layer between adjacent ones of the wirings and the wiring substrate. | 09-18-2008 |
20090051042 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes: a semiconductor substrate that has an integrated circuit; a plurality of electrodes that is formed on the semiconductor substrate, the plurality of the electrodes being electrically coupled to the integrated circuit; a passivation film that is formed on the semiconductor substrate, the passivation film having an opening on at least a part of one of the plurality of electrodes; a resin protrusion that is disposed on the passivation film; and a plurality of wiring lines that extend to a surface of the resin protrusion, each of the plurality of wiring lines extending from one of the plurality of the electrodes, a first portion of each of the plurality of wiring lines being positioned at an uppermost edge of the resin protrusion, a second portion of each of the plurality of wiring lines being positioned between one of the plurality of electrodes and the uppermost edge of the resin protrusion, a width of the first portion of each of the plurality of wiring lines being narrower than a width of at least a part of the second portion of each of the plurality of wiring lines. | 02-26-2009 |