Patent application number | Description | Published |
20090289301 | LASER ANNEALING OF METAL OXIDE SEMICONDUCTORON TEMPERATURE SENSITIVE SUBSTRATE FORMATIONS - A method of annealing a metal oxide on a temperature sensitive substrate formation includes the steps of providing a temperature sensitive substrate formation and forming a spacer layer on a surface of the temperature sensitive substrate formation. A metal oxide semiconductor device is formed on the spacer layer, the device includes at least a layer of metal oxide semiconductor material, an interface of the metal oxide layer with a dielectric layer, and a gate metal layer adjacent the layer of metal oxide semiconductor material and the interface. The method then includes the step of at least partially annealing the layer of metal oxide semiconductor material by heating the adjacent gate metal layer with pulses of infra red or visible light radiation. | 11-26-2009 |
20100309940 | HIGH POWER LASER PACKAGE WITH VAPOR CHAMBER - A heat spreader structure includes a high power laser with an epi side and an emitting facet. A vapor chamber includes a housing defining an inner vapor cavity and a wick positioned in the vapor cavity to define an evaporation area on one side of the cavity, a condensation area on an opposite side of the cavity, and fluid communication between the condensation area and the evaporation area. A space defined between the evaporation area and the condensation area. The wick includes a porous powder sintered to inner surfaces of the sealed cavity to hold the porous powder in position. The epi side of the laser is coupled to the one side of the vapor chamber and heat removal mechanism is coupled to the opposite side of the cavity. | 12-09-2010 |
20100314072 | BASE PLATE WITH TAILORED INTERFACE - Base plate apparatus for mounting IGBT modules, the base plate apparatus includes a base plate with a mounting surface and an opposed surface. A tailored coefficient of thermal expansion interface layer is directly bonded to the mounting surface of the base plate and forms a mounting surface for mounting IGBT modules. The interface layer has a coefficient of thermal expansion ranging from approximately 4 ppm/° C. to approximately 12 ppm/° C. | 12-16-2010 |
20110062431 | LASER ANNEALING OF METAL OXIDE SEMICONDUCTOR ON TEMPERATURE SENSITIVE SUBSTRATE FORMATIONS - A method of annealing a metal oxide on a temperature sensitive substrate formation includes the steps of providing a temperature sensitive substrate formation and forming a spacer layer on a surface of the substrate formation. A metal oxide semiconductor device is formed on the spacer layer, the device includes at least a layer of amorphous metal oxide semiconductor material, an interface of the amorphous metal oxide layer with a dielectric layer, and a gate metal layer adjacent the layer of amorphous metal oxide semiconductor material and the interface. The method then includes the step of at least partially annealing the layer of metal oxide semiconductor material by heating the adjacent gate metal layer with pulses of infra red radiation to improve the mobility and operating stability of the amorphous metal oxide semiconductor material while retaining at least the amorphous metal oxide semiconductor material adjacent the gate metal layer amorphous. | 03-17-2011 |
20130119396 | TWO-TERMINAL SWITCHING DEVICES AND THEIR METHODS OF FABRICATION - Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points. | 05-16-2013 |