Patent application number | Description | Published |
20080224191 | Image pickup device with prevention of leakage current - An image pickup device includes an active pixel sensor (APS), a row driver, and a leakage current breaker. The active pixel sensor includes an array of a plurality of pixels. The row driver selects at least one pixel to be activated to output signals. The leakage current breaker decreases the leakage current through the unselected pixels by applying a leakage current breaker voltage at the bit lines of the APS array. | 09-18-2008 |
20090108312 | IMAGE SENSOR AND METHOD OF STABILIZING A BLACK LEVEL IN AN IMAGE SENSOR - An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second pixels are formed in a first region spaced apart from the active region in a row direction. The anti-reflection board is formed in a second region above the substrate, and the second region is between the active region and the first region. The light shielding film is formed above the anti-reflection board, and the light shielding film covers an optical black region including the first and second regions. Therefore, the image sensor may be used in a CCD type image sensor and a CMOS type image sensor to provide a stabilized black level, thereby improving a quality of a displayed image. | 04-30-2009 |
20090209058 | Method of fabricating image sensor - A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region. | 08-20-2009 |
20100006968 | Image sensors and methods of manufacturing the same - Provided are image sensors and a methods of manufacturing image sensors. The image sensors may include a substrate, a pixel array region, and a peripheral circuit region. The substrate includes a first region and a second region. The pixel array region may be formed on the first region. The peripheral circuit region may be formed on the second region. The first region may be located higher than the second region. According to the image sensor and the method of manufacturing the same, the vertical height of the pixel array region is decreased as compared to the prior art, and thus the aspect ratio at the pixel array region is minimized. As a result, condensing efficiency the image sensor may be improved. | 01-14-2010 |
20100133635 | image sensor and image sensing system including the same - The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate. | 06-03-2010 |
20100327673 | LINEAR VIBRATOR - A linear vibrator is disclosed. In accordance with an embodiment of the present invention, the linear vibrator includes a base, a coil unit, which is coupled to the base, a magnet, which is coupled to the coil unit such that the magnet can move relatively with respect to the coil unit, and a leaf spring, which is interposed between the magnet and the base and includes a plurality of plate-shaped members having center portions thereof being separated from one another and both respective ends thereof being coupled to one another. Thus, the linear vibrator can increase the range of displacement in the leaf spring and increase the magnitude of vibration in the linear vibrator. | 12-30-2010 |
20110012442 | LINEAR TYPE VIBRATION MOTOR HAVING MAGNET CASING - A linear type vibration motor having a magnet casing is disclosed. The linear type vibration motor in accordance with an embodiment of the present invention includes a magnet assembly having a pair of magnets, in which same magnetic poles thereof face each other, a magnet casing, which has a hollow part formed therein and houses the magnet assembly in the hollow part, a base, which has a bobbin formed thereon and in which the magnet casing is inserted into the bobbin, a coil, which is coupled to the bobbin, a weight, which is coupled to both ends of the magnet casing, and a pair of elastic bodies, which are interposed between either end of the base and either end of the weight, respectively. Thus, the operating lifetime of the linear type vibration motor can be extended, and this arrangement can prevent the linear type vibration motor from being damaged by an external shock. | 01-20-2011 |
20110018042 | UNIT PIXEL, AND CMOS IMAGE SENSOR HAVING THE SAME - A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate. | 01-27-2011 |
20110036969 | Unit pixels including boosting capacitors, pixel arrays including the unit pixels and photodetecting devices including the pixel arrays - A unit pixel capable of achieving full initialization of a floating diffusion area, a pixel array including the unit pixel, and a photodetecting device including the pixel array. The unit pixel includes a photodetector, a transmission transistor for transmitting charges generated from the photodetector to a floating diffusion area, a reset transistor for initializing the floating diffusion area, and a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal to which a boosting voltage is applied. | 02-17-2011 |
20110037883 | Image sensors - Image sensors including a semiconductor substrate, a plurality of photo detecting elements, a dielectric layer, a plurality of color filters, and a plurality of micro lenses. The photo detecting elements may be in the semiconductor substrate and may convert an incident light into an electric signal. The dielectric layer may be on the semiconductor substrate and may include a plurality of photo blocking regions on regions between the photo detecting elements. The color filters may be on the dielectric layer and may be disposed corresponding to the plurality of photo detecting elements, respectively. The micro lenses may be on the plurality of color filters and may be disposed corresponding to the plurality of photo detecting elements, respectively. | 02-17-2011 |
20110101799 | LINEAR VIBRATOR - A linear vibrator is disclosed. The linear vibrator in accordance with an embodiment of the present invention includes a base, a coil unit, which is coupled to the base, a magnet assembly, which forms a closed circuit of a magnetic force perpendicular to an electric current flowing through the coil unit and in which the magnet assembly relatively moves with respect to the coil unit, and an elastic member, which elastically supports the magnet assembly. Thus, a linear vibrator with an increased driving force can be provided by preventing the leakage of magnetic flux. | 05-05-2011 |
20110176023 | UNIT PICTURE ELEMENTS, BACK-SIDE ILLUMINATION CMOS IMAGE SENSORS INCLUDING THE UNIT PICTURE ELEMENTS AND METHODS OF MANUFACTURING THE UNIT PICTURE ELEMENTS - Unit picture elements including photon-refracting microlenses. A unit picture element may include a photodiode, a metal layer, and a photo-refracting microlens. The photon-refracting microlens may be disposed between the photodiode and the metal layer. The photon-refracting microlens may refract photons reflected by the metal layer to a center portion of the photo diode. | 07-21-2011 |
20110176045 | COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR IMAGE SENSOR, DATA READOUT METHOD THEREOF, AND ELECTRONIC SYSTEM INCLUDING THE SAME - A complementary metal-oxide semiconductor (CMOS) image sensor and a pixel data readout method of the same are provided. The CMOS image sensor includes: a first readout line which outputs pixel data from a shared pixel group in an odd row of a column of a pixel array in a Bayer pattern during a horizontal period; and a second readout line which outputs pixel data from a shared pixel group in an even row of the column of the pixel array during the horizontal period, wherein pixel data output to the first and second readout lines during the horizontal period correspond to a basic Bayer pattern and pixels from which pixel data are read out in each column sequentially shifts in a column direction at each horizontal period. | 07-21-2011 |
20110193147 | BACKSIDE ILLUMINATION CMOS IMAGE SENSORS AND METHODS OF MANUFACTURING THE SAME - Backside illumination CMOS image sensors having convex light-receiving faces and methods of manufacturing the same. A backside illumination CMOS image sensor includes a metal layer, an insulating layer and a photodiode. The insulating layer is on the metal layer. The photodiode is on the insulating layer, and a top face of the photodiode, which receives light, is curved. A method of manufacturing a backside illumination CMOS image sensor including a photodiode having a convex surface includes forming an island smaller than the photodiode on a portion of a light-receiving face of the photodiode, and annealing the island to form the photodiode having the convex light-receiving face. | 08-11-2011 |
20120001289 | UNIT PIXEL ARRAY OF AN IMAGE SENSOR - A unit pixel array of an image sensor includes a semiconductor substrate having a plurality of photodiodes, an interlayer insulation layer on a front-side of the semiconductor substrate, and a plurality of micro lenses on a back-side of the semiconductor substrate. The unit pixel array of the image sensor further includes a wavelength adjustment film portion between each of the micro lenses and the back-side of the semiconductor substrate such that a plurality of wavelength adjustment film portions correspond with the plurality of micro lenses. | 01-05-2012 |
20120273855 | UNIT PIXEL, AND CMOS IMAGE SENSOR HAVING THE SAME - A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate. | 11-01-2012 |
20140104417 | SYSTEM OF MEASURING WARPAGE AND METHOD OF MEASURING WARPAGE - Disclosed herein are a system of measuring a warpage and a method of measuring a warpage. The system of measuring a warpage of a sample by analyzing an image photographed by the camera using light that is diffused from a light source and reflected on a surface of a sample and is arrived at the camera through a reference grating part, the system includes: an intake part that removes a fume generated from the sample. By this configuration, it is possible to measure the warpage while effectively removing the fume generated from the sample according to the increase in the temperature of the sample at the time of measuring the warpage, thereby improving the accuracy of the warpage measurement. | 04-17-2014 |
20140145323 | LAMINATION LAYER TYPE SEMICONDUCTOR PACKAGE - Disclosed herein is a lamination layer type semiconductor package, and more particularly, a lamination layer type semiconductor package capable of maintaining a thickness of a package on package structure at a minimum and minimizing a warpage defect by mounting two chips so as to correspond to each other. The lamination layer type semiconductor package includes: an upper package having an upper flip chip mounted on an upper substrate; a lower package having a lower flip chip mounted on a lower substrate and disposed so as to closely adhere the upper flip chip and the lower flip chip to each other; a heat dissipation adhesive member adhesively fixing the upper flip chip and the lower flip chip and dissipating heat generated from the upper flip chip and the lower flip chip; and a molding member molding between the upper substrate and the lower substrate. | 05-29-2014 |
20140184782 | SYSTEM OF MEASURING WARPAGE AND METHOD OF MEASURING WARPAGE - Disclosed herein are a system for measuring a warpage and a method for measuring a warpage. The system for measuring a warpage includes: a heating plate portion heating the sample; and a reference gating portion disposed between the sample and the camera so as to be spaced apart from the sample by a predetermined distance, wherein the reference grating portion includes a plurality of wires that are each spaced apart from each other by a predetermined interval, thereby accurately measuring the warpage without being affected by the fume generated from the sample. | 07-03-2014 |
20140313383 | IMAGE SENSOR AND COMPUTING SYSTEM HAVING THE SAME - An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function. | 10-23-2014 |
20140327051 | IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor and a method of manufacturing the image sensor are provided. The image sensor may include a photo detecting device and a charge storage device. The image sensor may further include a trench and a shield which blocks light from being absorbed by the charge storage device. The charge storage device may temporarily store accumulated charges by the photo detecting device. | 11-06-2014 |
20140354797 | CALIBRATION BLOCK FOR MEASURING WARPAGE, WARPAGE MEASURING APPARATUS USING THE SAME, AND METHOD THEREOF - Disclosed herein are a calibration block for measuring warpage, a warpage measuring apparatus using the same, and a method thereof. The calibration block includes a substrate having one planar surface; and a stepped part forming a step at the center of the other surface of the substrate. | 12-04-2014 |
20140374870 | IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein are an image sensor module and a method of manufacturing the same. The image sensor includes: a base substrate having an image sensor mounted groove including a first groove and a second groove having a stepped shape; and an image sensor mounted in a groove of the base substrate. | 12-25-2014 |
20150070553 | IMAGE SENSOR, IMAGE PROCESSING SYSTEM INCLUDING THE SAME, AND METHOD OF OPERATING THE SAME - A method of operating an image sensor, which includes a plurality of pixels including a photo diode that accumulates photocharges generated according to incident light, is provided. The method includes changing a potential of the photo diode by applying a hulk control signal at a first voltage level to a ground terminal, transferring the photocharges accumulated at the photo diode to a floating diffusion node, and generating a pixel signal according to a potential of the floating diffusion node. | 03-12-2015 |