Patent application number | Description | Published |
20080224188 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An apparatus that can effectively operate in high temperatures including a CMOS image sensor, a thermoelectric semiconductor formed under the CMOS image sensor for selectively cooling the image sensor and a heat sink formed under the thermoelectric semiconductor. | 09-18-2008 |
20080224189 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor and a method for manufacturing an image sensor that has an increased aspect ratio. An image sensor and a method for manufacturing an image sensor that have a relatively large process margin (e.g. even in high level pixels), which may reduce and/or eliminate restrictions in downscaling an image sensor. An image sensor may include at least one of a first unit pixel including a first transfer transistor, a second unit pixel including a second drive transistor, and a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel. A method of manufacturing an image sensor including at least one of forming a first unit pixel including a first transfer transistor, forming a second unit pixel including a second drive transistor, and forming a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel. | 09-18-2008 |
20080227248 | CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A CMOS image sensor and a manufacturing method are disclosed. The gates of the transistors are formed in the active region of the unit pixel, and a diffusion region for the photo diode is defined by an ion implantation of impurities to the semiconductor substrate. The patterns of the photoresist that are the masking layer against ion implantation are formed on the semiconductor substrate in such a manner that they have the boundary portion of the isolation layer so as not to make the boundary of the defined photo diode contact with the boundary of the isolation layer. Damages by an ion implantation of impurities at the boundary portion between the diffusion region for the photo diode and the isolation layer are prevented, which reduces dark current of the COMS image sensor. | 09-18-2008 |
20090085080 | Image Sensor and Method for Manufacturing The Same - Disclosed is an image sensor. The image sensor includes a semiconductor substrate including unit pixels, an interlayer dielectric layer including metal interconnections formed on the semiconductor substrate, a plurality of bottom electrodes formed on the interlayer dielectric layer in correspondence with the unit pixels, the plurality of bottom electrodes includes bottom electrodes having at least two different sizes, a photodiode formed on the interlayer dielectric layer including the bottom electrodes, and color filters formed on the photodiode in correspondence with the unit pixels. | 04-02-2009 |
20090090989 | Image Sensor and Method of Manufacturing the Same - An image sensor and a manufacturing method thereof are provided. The image sensor can comprise: a semiconductor substrate, a first dielectric, a second dielectric pattern, a planarization layer, and a color filter. The semiconductor substrate comprises a photodiode. The first dielectric is disposed on the semiconductor substrate. The second dielectric pattern is disposed on the first dielectric and comprises a trench in a region corresponding to the photodiode. The planarization layer is disposed in the trench. The color filter is disposed on the planarization layer disposed on the photodiode. | 04-09-2009 |
20090116949 | Wafer Bonding Apparatus and Method - A wafer bonding apparatus and method are provided. The wafer bonding apparatus can include an aligning unit, and the aligning unit can include a rotating roller for rotating at least two wafers, an aligning bar for aligning the at least two wafers, and a notch alignment sensor for sensing at least two notches of each of the at least two wafers. | 05-07-2009 |
20090146205 | Floating Gate of Flash Memory Device and Method of Forming the Same - Disclosed is a floating gate of a flash memory device, wherein a tunneling oxide layer is formed on a semiconductor substrate, and a floating gate is formed in the shape of a lens having a convex top surface. | 06-11-2009 |
20090166628 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a first substrate having a circuitry including a wire formed therein and a photodiode formed above the circuitry. An unevenness is formed at the top of the photodiode. The unevenness may, for example, be formed by selectively etching the top of the photodiode and may act to maximize light absorption by the photodiode. | 07-02-2009 |
20090179237 | CMOS image sensor and method for fabricating the same - CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a transistor region defined therein, a device isolating film in the semiconductor substrate of the device isolation region, a first conductive type impurity region in the semiconductor substrate of the photodiode region, the first conductive type impurity region being spaced a distance from the device isolation film, and a second conductive type first impurity region in the semiconductor substrate between the first conductive type impurity region and the device isolation film, thereby reducing generation of a darkcurrent at an interface between the photodiode region and a field region. | 07-16-2009 |
20090224298 | CMOS Image Sensor and Manufacturing Method Thereof - Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes the steps of: forming an isolation layer on a semiconductor substrate, defining an active region that includes a photo diode region and a transistor region; forming a gate in the transistor region, the gate including a gate electrode and a gate insulating layer; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming a buffer layer over the substrate, the buffer layer covering the photo diode region; forming first and second insulating layers over the entire surface of the substrate, the first and second insulating layer having a different etching selectivity from each other; forming an insulating sidewall on sides of the gate electrode by selective removal of the second insulating layer; removing the first insulating layer from the transistor region; forming a high-concentration diffusion region in the exposed transistor region, partially overlapping the second low-concentration diffusion region; and forming a metal silicide layer on the high-concentration diffusion region. | 09-10-2009 |
20100025801 | Image Sensor and Method for Manufacturing the Same - An image sensor includes readout circuitry on a first substrate, a metal line electrically connected with the readout circuitry, a dielectric on the metal line, an image sensing device on the dielectric, including first and second conductivity type layers, a contact plug in a via hole penetrating the image sensing device to connect the first conductivity type layer with the metal line, and a sidewall dielectric in the via hole at a sidewall of the second conductivity type layer. | 02-04-2010 |
20140124843 | Photo Sensor - Disclosed is a photo sensor including a first conductive type semiconductor substrate, a photodiode region in a light receiving region of the semiconductor substrate, a first transistor including a first gate, a first source region and a first drain region, the first transistor being adjacent to the photodiode region, and a light-absorption control layer in a first region of the photodiode region, the light-absorption control layer exposing a second region of the photodiode region, wherein the first region is spaced apart from the first source region, and the second region is another portion of the photodiode region contacting the first source region. | 05-08-2014 |