Patent application number | Description | Published |
20090001051 | Slurry compositions for polishing metal, methods of polishing a metal object and methods of forming a metal wiring using the same - A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent having at least one of a sulfonate ion (SO | 01-01-2009 |
20090011599 | SLURRY COMPOSITIONS FOR SELECTIVELY POLISHING SILICON NITRIDE RELATIVE TO SILICON OXIDE, METHODS OF POLISHING A SILICON NITRIDE LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water, and the first agent includes poly(acrylic acid). The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process. | 01-08-2009 |
20090099934 | METHOD AND SOFTWARE FOR DISPLAYING ADVERTISEMENTS ON A WEB PAGE - Some embodiments disclosed herein are a method and a system for displaying an advertisement on a web page in which advertisement data displayed on the same web page from among different advertisement data can check mutual existence of the displayed advertisement data, thereby displaying another advertisement data different from the displayed advertisement data. The method for displaying another advertisement data includes recording and maintaining advertisement data including respective identification numbers in an advertisement database, loading the advertisement data from the advertisement database to a local computer memory of a user connected with a web page, identifying advertisement data having an identification number among the advertisement data loaded to the local computer memory, identifying predetermined option which may comprise predetermined display advertisement data from the advertisement database when the advertisement data having the identification number exists, and displaying the display advertisement data on the web page. | 04-16-2009 |
20090155991 | Methods of fabricating a semiconductor device - A method of fabricating a contact plug of a semiconductor device is provided, the method includes forming a gate pattern on a substrate, forming a capping pattern to cover an upper surface and sidewalls of the gate pattern, forming an interlayer insulation layer on the substrate such that the interlayer insulation layer exposes an upper surface of the capping pattern, and removing a portion of the capping pattern and the interlayer insulation layer such that the upper surface of the capping pattern is planarized. | 06-18-2009 |
20090199583 | Indoor unit of air conditioner - Disclosed is an indoor unit of an air conditioner, in which discharge units respectively provided on upper and lower portions of the indoor unit have an improved discharge structure such that the discharge units are interchangeable, to increase cooling efficiency regardless of installation position of the indoor unit. The indoor unit includes a cabinet; a first discharge unit being detachably provided on the cabinet and configured to discharge air in a forward direction; and a second discharge unit separated from the first discharge unit, being detachably provided on the cabinet and configured to discharge air in the oblique direction, the first discharge unit and the second discharge unit being interchangeable according to a height of a position at which the cabinet is installed. The indoor unit of the air conditioner sets the optimum direction of discharged air, thus increasing the cooling efficiency of an indoor space. | 08-13-2009 |
20090203213 | Slurry composition for chemical-mechanical polishing and method of chemical-mechanical polishing with the same - Provided may be a slurry composition for chemical mechanical polishing (CMP) and a CMP method using the same. For example, the slurry composition may include a first polishing inhibitor including at least one of PO | 08-13-2009 |
20090205352 | Air conditioner and control box assembly - Disclosed is an air conditioner having a control box assembly, which enhances the serviceability of a circuit board and reduces production costs. In the air conditioner, which has a casing unit forming an external appearance of the air conditioner, a heat exchanger, a blowing device, and a control box assembly provided in the casing, the control box assembly includes a mounting unit mounting a circuit board; a control box housing the circuit board and the mounting unit; and guide units provided in the control box to guide a rectilinear reciprocating motion of the mounting unit to allow the mounting unit to come into and out of the control box and guide a rotating motion of the mounting unit in the case that the mounting unit is located at a designated position. | 08-20-2009 |
20100231227 | Reliability evaluation circuit and reliability evaluation system - A reliability evaluation system comprises a reliability evaluation circuit and a reliability evaluation control circuit. The reliability evaluation circuit includes a stress device array and a stress voltage generating block configured to receive a control voltage, generate stress voltages generated by using two reference voltages, and apply the stress voltages to the unit devices in a stress mode via first I/O lines according to the control voltage. The stress device array includes the unit devices that are matrix-arrayed. Each of the unit devices has a first terminal connected to one of the first I/O lines and a second terminal connected to one of second I/O lines. The reliability evaluation control circuit is configured to generate the control voltage and the two reference voltages, and test reliability of the unit devices by using the first I/O lines and the second I/O lines. | 09-16-2010 |
20120007018 | SLURRY COMPOSITIONS FOR SELECTIVELY POLISHING SILICON NITRIDE RELATIVE TO SILICON OXIDE, METHODS OF POLISHING A SILICON NITRIDE LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water. The first agent includes poly(acrylic acid), The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process. | 01-12-2012 |
20120088358 | Methods of Forming Gates of Semiconductor Devices - Methods of forming gates of semiconductor devices are provided. The methods may include forming a first recess in a first substrate region having a first conductivity type and forming a second recess in a second substrate region having a second conductivity type. The methods may also include forming a high-k layer in the first and second recesses. The methods may further include providing a first metal on the high-k layer in the first and second substrate regions, the first metal being provided within the second recess. The methods may additionally include removing at least portions of the first metal from the second recess while protecting materials within the first recess from removal. The methods may also include, after removing at least portions of the first metal from the second recess, providing a second metal within the second recess. | 04-12-2012 |
20140235047 | METHODS OF FORMING GATES OF SEMICONDUCTOR DEVICES - Methods of forming gates of semiconductor devices are provided. The methods may include forming a first recess in a first substrate region having a first conductivity type and forming a second recess in a second substrate region having a second conductivity type. The methods may also include forming a high-k layer in the first and second recesses. The methods may further include providing a first metal on the high-k layer in the first and second substrate regions, the first metal being provided within the second recess. The methods may additionally include removing at least portions of the first metal from the second recess while protecting materials within the first recess from removal. The methods may also include, after removing at least portions of the first metal from the second recess, providing a second metal within the second recess. | 08-21-2014 |