Idaka
Kenji Idaka, Akashi-Shi JP
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20140090919 | SADDLE-RIDING TYPE AUTOMOTIVE VEHICLE - A motorcycle frame assembly (FR) for a motorcycle includes a main frame ( | 04-03-2014 |
20140091602 | SEAT ASSEMBLY FOR SADDLE RIDING TYPE AUTOMOTIVE VEHICLE - A fellow passenger's seat ( | 04-03-2014 |
Mamoru Idaka, Osaka JP
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20090078687 | Laser Processing Apparatus, Processed Data Generating Method, and Computer Program - The present invention aims to rapidly and easily create processed data for scan controlling a laser light beam, and to create the processed data for the laser processing apparatus at high precision. A setting plane corresponding to a scanning region of a laser marker is displayed on a processed data generating device. A user operates the processed data generating device to arrange the processing pattern on the setting plane. Here, a marker head coincides an optical axis of the laser light beam L on a position corresponding to the reference point of the processing pattern, and photographs a work W with a camera which light receiving axis is coaxial with the optical axis of the laser light beam L. A photographed image monitor displays the photographed image along with a symbol indicating the position of the light receiving axis of the camera. | 03-26-2009 |
20120061360 | Method Of And System For Setting Laser Processing Conditions, Laser Processing System, Computer Program For Setting Laser Processing Conditions, Computer Readable Medium and Recording Device On Which Laser Processing Conditions Are Recorded - A method of setting processing data for a computer-assisted laser processing apparatus is disclosed, along with a system for setting a laser processing data. The method comprises a function of setting a three-dimensional profile of a object and a processing pattern as processing conditions, a function of generating processing data representing the processing conditions for the object, and a function of visually displaying a two dimensional representation of the processing data on a display screen and a function of setting a three-dimensional profile of a object and a processing pattern as processing conditions, wherein it is enabled to set the three-dimensional profile and the processing pattern while displaying the object in two dimensions on the display screen disposed within a processing zone. | 03-15-2012 |
20120062972 | Method Of And System For Setting Laser Processing Conditions, Laser Processing System, Computer Program For Setting Laser Processing Conditions, Computer Readable Medium and Recording Device On Which Laser Processing Conditions Are Recorded - A method of setting processing data for a computer-assisted laser processing apparatus is disclosed, along with a system for setting a laser processing data. The method comprises a function of setting a three-dimensional profile of a object and a processing pattern as processing conditions, a function of generating processing data representing the processing conditions for the object, and a function of visually displaying a two dimensional representation of the processing data on a display screen and a function of setting a three-dimensional profile of a object and a processing pattern as processing conditions, wherein it is enabled to set the three-dimensional profile and the processing pattern while displaying the object in two dimensions on the display screen disposed within a processing zone. | 03-15-2012 |
20120182376 | Laser Processing Device - Provided is a laser processing device for preventing damage of the camera by return light of the laser light. A laser processing device includes a laser oscillator; a camera; a polarized beam splitter for transmitting the laser light while making a light receiving axis of the camera substantially coincide with an emission axis of the laser light; an illumination light source for generating illumination light having a wavelength substantially the same as the laser light as illumination light for illuminating the workpiece; a half mirror for making the emission axis of the illumination light substantially coincide with the emission axis of the laser light; a control unit; and a shutter for blocking the return light from the workpiece based on an output control signal of the laser light, the shutter arranged on the camera side than the polarized beam splitter in a light receiving path of the camera. | 07-19-2012 |
Sayuri Idaka, Tokyo JP
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20150135248 | IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM, CONTROL METHOD FOR IMAGE PICKUP APPARATUS, AND RECORDING MEDIUM - An image pickup apparatus includes a storage unit configured to store a first protocol and a first capability information in a memory, the first capability information being associated with the first protocol as a capability information and also store a second protocol and second capability information in the memory, the second capability information being associated with the second protocol as the capability information, a reception unit configured to receive a command for requesting the capability information from the external apparatus via the network, a determination unit configured to determine whether the received command is in conformity to the first protocol or the second protocol, a reading unit configured to read out the first or second capability information associated with the protocol determined by the determination unit from the memory, and a transmission unit configured to transmit the read capability information to the external apparatus via the network. | 05-14-2015 |
Shiori Idaka, Chiyoda-Ku JP
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20150162219 | Semiconductor Device and Method of Manufacturing the Same - A plurality of semiconductor elements for power control are formed on a semiconductor substrate. A stress relaxation resin layer covering a crossing region where band-shaped dicing areas dividing the semiconductor elements adjacent to each other cross is formed. The crossing region is diced to cut the stress relaxation resin layer to obtain the separate semiconductor elements. Accordingly, even with semiconductor elements produced with a compound semiconductor substrate of SiC or the like, a semiconductor device having high adhesive strength with a sealing resin and being less likely to cause cracking or peeling of the sealing resin due to thermal stress during an operation can be obtained. | 06-11-2015 |
Shiori Idaka, Tokyo JP
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20120187554 | POWER SEMICONDUCTOR DEVICE, PRINTED WIRING BOARD, AND MECHANISM FOR CONNECTING THE POWER SEMICONDUCTOR DEVICE AND THE PRINTED WIRING BOARD - A power semiconductor device includes a conductive insertion member as an external terminal projecting from a surface of the power semiconductor device facing a printed wiring board. The printed wiring board includes a conductive fitting member mounted on a pad part of the printed wiring board. The fitting member receives the insertion member therein when the power semiconductor device is connected to the printed wiring board. The insertion member has a recessed portion formed on a side surface of the insertion member. The fitting member has a projecting portion with elasticity formed on an inner side surface of the fitting member. The elasticity causes the projecting portion of the fitting member to contact the recessed portion of the insertion member under pressure when the insertion member is inserted into the fitting member. | 07-26-2012 |
20120286292 | POWER SEMICONDUCTOR MODULE - A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module. | 11-15-2012 |
20140138707 | POWER SEMICONDUCTOR MODULE - A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region. | 05-22-2014 |
Toshiaki Idaka, Kanagawa JP
Patent application number | Description | Published |
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20090203201 | METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming a dielectric film containing a porogen material above a substrate; removing a portion of the porogen material contained in the dielectric film so as to make a concentration of the porogen material higher in a part on a lower side of the dielectric film than in another part on a higher side of the dielectric film; forming an opening halfway in the dielectric film from which a portion of the porogen material has been removed to leave the dielectric film below a bottom of the opening; removing or polymerizing a remainder of the porogen material contained in the dielectric film; and etching the bottom of the opening after removing or polymerizing the remainder of the porogen material. | 08-13-2009 |
Toshiaki Idaka, Kanagawa-Ken JP
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20090283874 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device manufacturing method in which a silicon nitride film is formed to cover an n-channel transistor formed on a semiconductor substrate and to apply a tensile stress in a channel length direction to a channel of the n-channel transistor, the method includes: forming a first-layer silicon nitride film above the n-channel transistor; irradiating the first-layer silicon nitride film with ultraviolet radiation; and after the ultraviolet irradiation, forming at least one silicon nitride film thinner than the first-layer silicon nitride film above the first-layer silicon nitride film. Silicon nitride films formed to apply the tensile stress is formed by respective steps. | 11-19-2009 |
20100320512 | Semiconductor device manufacturing method and semiconductor device - Disclosed is a semiconductor device manufacturing method in which a silicon nitride film is formed to cover an n-channel transistor formed on a semiconductor substrate and to apply a tensile stress in a channel length direction to a channel of the n-channel transistor, the method includes: forming a first-layer silicon nitride film above the n-channel transistor; irradiating the first-layer silicon nitride film with ultraviolet radiation; and after the ultraviolet irradiation, forming at least one silicon nitride film thinner than the first-layer silicon nitride film above the first-layer silicon nitride film. Silicon nitride films formed to apply the tensile stress is formed by respective steps. | 12-23-2010 |
Yujiro Idaka, Tokyo JP
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20150022680 | IMAGING APPARATUS, EXTERNAL APPARATUS, IMAGING SYSTEM, METHOD FOR CONTROLLING IMAGING APPARATUS, METHOD FOR CONTROLLING EXTERNAL APPARATUS, METHOD FOR CONTROLLING IMAGING SYSTEM, AND STORAGE MEDIUM - An imaging apparatus includes an imaging unit configured to capture an object image, a rotation unit configured to rotate the imaging unit in a predetermined direction, and a first transmission unit configured to transmit, to an external apparatus, acceleration information indicating whether an acceleration at which the rotation unit rotates the imaging unit is able to be designated. | 01-22-2015 |
Yuujirou Idaka, Saitama-Shi JP
Patent application number | Description | Published |
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20120105666 | IMAGING APPARATUS AND IMAGING METHOD - An imaging apparatus includes an image sensor, an AD conversion unit, a clamp processing unit, and a video signal correction unit. The clamp processing unit is configured to clamp to a black level, an image signal of an effective pixel region or an optical-black region of the image sensor after having been digitally converted by the AD conversion unit, by evaluating a difference from a signal of the optical-black region. The video signal correction unit is configured to calculate signal information of a part or whole of the optical-black region of an image signal of the image sensor; and, independently for each color of the video signal, to calculate correction amount of a video signal using the signal information, and to carry out correction by subtracting calculated correction amount from the image signal before clamping operation performed by the clamp processing unit. | 05-03-2012 |