Ko, JP
Aram Ko, Okayama-Shi JP
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20130331576 | Novel Compound, Novel Ligand, Novel Transition Metal Complex, and Catalyst Including Novel Transition Metal Complex - The invention provides novel ligands for transition metal complexes which exhibit high coordination power with respect to metals by being free of substituents at the positions ortho to phosphorus or arsenic and which have electron-withdrawing power comparable to the highest level known in conventional ligands. A ligand of the invention includes a compound represented by General Formula (1): R | 12-12-2013 |
Bong-Gyun Ko, Tokyo JP
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20080242048 | METHOD FOR MANUFACTURING SOI SUBSTRATE - To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface. | 10-02-2008 |
20090203187 | Method of Manufacturing SOI Substrate - To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface. | 08-13-2009 |
20100197047 | METHOD FOR MANUFACTURING SIMOX WAFER - At oxygen ion implanting steps in manufacture of a SIMOX wafer, a path is formed inside or on a back surface of wafer holding means, and oxygen ions are implanted while heating an outer peripheral portion of the wafer that is in contact with the wafer holding means by flowing a heated fluid through this path. An in-plane temperature of a wafer held at the time of ion implantation is prevented from becoming uneven, and in-plane film thicknesses of both an SOI layer and a BOX layer are uniformed. | 08-05-2010 |
20130012008 | METHOD OF PRODUCING SOI WAFER - The present invention provides a method of producing a high quality SOI wafer having a thin BOX layer with high productivity. In the method of producing an SOI wafer by performing heat treatment on a silicon wafer after implanting oxygen ions into silicon wafer, first ion implantation is performed on the silicon wafer to a high dose of 2×10 | 01-10-2013 |
Changhee Ko, Tsukuba JP
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20120175751 | DEPOSITION OF GROUP IV METAL-CONTAINING FILMS AT HIGH TEMPERATURE - Disclosed are group IV metal-containing precursors and their use in the deposition of group IV metal-containing films{nitride, oxide and metal) at high process temperature. The use of cyclopentadienyl and imido ligands linked to the metal center secures thermal stability, allowing a large deposition temperature window, and low impurity contamination. The group IV metal (titanium, zirconium, hafnium)-containing fvm depositions may be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD. | 07-12-2012 |
20130295298 | TITANIUM-ALUMINUM ALLOY DEPOSITION WITH TITANIUM-TETRAHYDROALUMINATE BIMETALLIC MOLECULES - Disclosed are titanium-tetrahydroaluminates precursors, their method of manufacture, and their use in the deposition of titanium-aluminum-containing films. The disclosed precursors have the formulae Ti(AlH | 11-07-2013 |
20150368282 | COBALT-CONTAINING COMPOUNDS, THEIR SYNTHESIS, AND USE IN COBALT-CONTAINING FILM DEPOSITION - Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R | 12-24-2015 |
20160002786 | BIS(ALKYLIMIDO)-BIS(ALKYLAMIDO)MOLYBDENUM MOLECULES FOR DEPOSITION OF MOLYBDENUM-CONTAINING FILMS - Bis(alkylimido)-bis(alkylamido)molybdenum compounds, their synthesis, and their use for the deposition of molybdenum-containing films are disclosed. | 01-07-2016 |
20160032454 | BIS(ALKYLIMIDO)-BIS(ALKYLAMIDO)TUNGSTEN MOLECULES FOR DEPOSITION OF TUNGSTEN-CONTAINING FILMS - Bis(alkylimido)-bis(alkylamido)tungsten compounds, their synthesis, and their use for the deposition of tungsten-containing films are disclosed. | 02-04-2016 |
20160040289 | BIS(ALKYLIMIDO)-BIS(ALKYLAMIDO)MOLYBDENUM MOLECULES FOR DEPOSITION OF MOLYBDENUM-CONTAINING FILMS - Bis(alkylimido)-bis(alkylamido)molybdenum compounds, their synthesis, and their use for the deposition of molybdenum-containing films are disclosed. | 02-11-2016 |
20160111272 | VAPOR DEPOSITION OF SILICON-CONTAINING FILMS USING PENTA-SUBSTITUTED DISILANES - Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane. | 04-21-2016 |
Changhee Ko, Tsukuba-Shi JP
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20110206862 | Titanium Nitride Film Deposition by Vapor Deposition Using Cyclopentadienyl Alkylamino Titanium Precursors - Disclosed are cyclopentadienyl alkylamino titanium precursors selected from the group consisting of Ti(iPr | 08-25-2011 |
Changhee Ko, Ibaraki JP
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20160040289 | BIS(ALKYLIMIDO)-BIS(ALKYLAMIDO)MOLYBDENUM MOLECULES FOR DEPOSITION OF MOLYBDENUM-CONTAINING FILMS - Bis(alkylimido)-bis(alkylamido)molybdenum compounds, their synthesis, and their use for the deposition of molybdenum-containing films are disclosed. | 02-11-2016 |
Dukhyun Ko, Kanagawa JP
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20110316217 | AUTOMATIC DOCUMENT TRANSPORT DEVICE, IMAGE READING DEVICE, AND IMAGE FORMING APPARATUS - An automatic document transport device includes a document stacker that is movable between a stacking position and an open position; a document transport path; a document feed member; a document output section; a document output member disposed downstream of an image reading position, the document output member including upper and lower output members; and a shielding member disposed above a document output slot and between the document output member and the document output section, the shielding member including first and second shielding portions, the first shielding portion extending upward and having a lower end disposed above a region in which the upper and lower output members contact each other, the second shielding portion extending downstream from the lower end of the first shielding portion, the shielding member shielding the upper output member from a space between the document stacker and the document output section. | 12-29-2011 |
Gaku Ko, Nagano-Ken JP
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20080235947 | LIQUID EJECTING HEAD - A conductive nozzle plate is formed with a nozzle orifice. An insulative layer is formed on a first face of the nozzle plate. A head body includes a pressure chamber adapted to contain liquid therein and a pressure generating element operable to cause pressure fluctuation in the liquid. The head body is attached to a second face of the nozzle plate so as to communicate the pressure chamber with the nozzle orifice. The second face of the nozzle plate and the head body are fixed to a head case. A conductive head cover covers a part of the first face of the nozzle plate while exposing the nozzle orifice. A part of the nozzle plate and the head cover directly come into contact with each other. | 10-02-2008 |
Heishou Ko, Kobe-Shi JP
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20150090152 | RAILCAR BODYSHELL AND RAILCAR INCLUDING SAME - The present invention includes: an outside plate; first frames each including a first head portion; and second frames each including a second head portion and arranged perpendicular to the first frames. At each of portions where the first frames and the second frames intersect with each other, the second head portion is arranged on the first head portion so as to overlap the first head portion. | 04-02-2015 |
Higashi Ko, Iwate JP
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20080304908 | Gutter Block Structure, Water Channel Formed by Gutter Block Structures, and Method of Manufacturing Gutter Block Structure - A gutter block structure of the present invention has a configuration in which a vegetable fiber layer made of palm fibers or the like is integrally attached to an inner surface of a water-permeable concrete material, sidewall surfaces which serve as the inner surface are formed into a stepped shape, and a bottom surface which serves as the inner surface is formed into an irregular shape. Further, both the sidewalls are formed into a curved shape or S-shape. Thus, when a water channel is formed by the gutter block structures, the supply and drain of water between the water channel and the surrounding soil is enabled, the flow velocity of water can be reduced, and zones with different flow velocities can be provided. Thus, an environment at the water channel and around the water channel can be closer to a natural condition, and an environment for growing underwater creatures can be brought into a fairly good condition. | 12-11-2008 |
Kenmei Ko, Toyama JP
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20090137128 | Substrate Processing Apparatus and Semiconductor Device Producing Method - Disclosed is a substrate processing apparatus including: a reaction tube to accommodate at least one substrate; at least a pair of electrodes disposed outside the reaction tube; and a dielectric member, wherein a plasma generation region is formed at least in a space between an inner wall of the reaction tube and an outer circumferential edge of the substrate, the member includes a main face extending in a radial direction of the substrate and in a substantially entire circumferential direction of the substrate in a horizontal plane parallel to a main face of the substrate, and is disposed in an outer circumferential region of the substrate, and gas activated in the plasma generation region is supplied through a surface region of the main face of the member to the substrate. | 05-28-2009 |
Minoru S.h. Ko, Tokyo JP
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20140234969 | METHODS FOR ENHANCING GENOME STABILITY AND TELOMERE ELONGATION IN EMBRYONIC STEM CELLS - The disclosure provides methods for increasing genome stability of an embryonic stem (ES) cell or induced pluripotent stem (iPS) cell, increasing telomere length in an ES or iPS cell, or both, for example by contacting an ES or iPS cell with an agent that increases expression of Zscan4 in the cell. Methods for increasing genome stability or increasing telomere length in a population of ES or iPS cells are provided, for example by selecting Zscan4 | 08-21-2014 |
Myungsook Ko, Tokyo JP
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20160085816 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING METHOD, AND RECORDING MEDIUM - According to one embodiment, an information processing apparatus includes a preference information obtainer that obtains preference information indicating preferences of a target user to which recommendation is to be made, the preferences ranging over a plurality of genres. The information processing apparatus includes a recommendation item determiner that determines, using the preference information of the target user and recommendation candidate information about a plurality of recommendation candidates ranging over a plurality of genres, a recommendation item to be recommended to the target user from the plurality of recommendation candidates, the recommendation candidate information being stored in an accessible storage apparatus. | 03-24-2016 |
Nikka Ko, Yokohama-Shi JP
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20100176368 | METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE, AND SEMICONDUCTOR MEMORY DEVICE - A method of manufacturing semiconductor memory device comprises forming a first wiring layer and a memory cell layer above a semiconductor substrate; forming a plurality of first trenches extending in a first direction in the first wiring layer and the memory cell layer, thereby forming first wirings and separating the memory cell layer; burying a first interlayer film in the first trenches to form a stacked body; forming a second wiring layer above the stacked body; forming a plurality of second trenches, extending in a second direction intersecting the first direction and reaching an upper surface of the first interlayer film in depth, in the first stacked body with the second wiring layer formed thereabove, thereby forming second wirings; removing the first interlayer film isotropically; and digging the second trenches down to an upper surface of the first wirings, thereby forming memory cells. | 07-15-2010 |
Nikka Ko, Yokkaichi-Shi JP
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20120319173 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, THREE-DIMENSIONAL SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME - A three-dimensional semiconductor device includes a semiconductor substrate, a plurality of conductive layers and insulating layers, and a plurality of contacts. The plurality of conductive layers and insulating layers are stacked alternately above the semiconductor substrate. The plurality of contacts extend in a stacking direction of the plurality of conductive layers and insulating layers. The plurality of conductive layers form a stepped portion having positions of ends of the plurality of conductive layers gradually shifted from an upper layer to a lower layer. The plurality of contacts are connected respectively to each of steps of the stepped portion. The stepped portion is formed such that, at least from an uppermost conductive layer to a certain conductive layer, the more upwardly the conductive layer is located, the broader a width of the step is. | 12-20-2012 |
Nikka Ko, Mie-Ken JP
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20110223769 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - According to one embodiment, a method of fabricating a semiconductor device, including, selectively forming a first film as a core member on a film to be processed, forming a second film on a side surface and an upper surface of the core member, and on an upper surface of the film to be processed to cover the film, the second film which is constituted with same material as the first film and is doped with impurities being different in amount from impurities in the first film, removing the second film on the core member and on the film to be processed to form a sidewall mask constituted with the second film on the side surface of the core member, selectively removing the core member, and etching the film to be processed using the sidewall mask film as a mask. | 09-15-2011 |
20130032874 | METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a method is disclosed for manufacturing a nonvolatile semiconductor memory device. The device includes a plurality of electrode films stacked along a first axis perpendicular to a major surface of a substrate, a plurality of semiconductor layers penetrating through the electrode films, and a memory film provided between the electrode films and the semiconductor layer. The method can include forming a first stacked body by alternately stacking a plurality of first films and second films. The method can include forming a support unit supporting the first films. The method can include forming a first hole and removing the second films via the first hole to form a second stacked body. The method can include forming a plurality of through holes penetrating through the first films. In addition, the method can include burying the memory film and the semiconductor layers in the through holes. | 02-07-2013 |
Pohan Ko, Yokohama-Shi JP
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20140322004 | AXIAL FLOW WATER TURBINE - An axial flow water turbine according to an embodiment includes a discharge ring and a runner vane. When seen in the runner meridional cross section, a straight line that passes a border between a cylindrical surface and a spherical surface of the discharge ring and that is perpendicular to a water turbine rotation axis is denoted as A. A crossing point between the straight line A and the water turbine rotation axis is denoted as B. A straight line inclined by an angle θ of 10 degrees or less is denoted as C. A cross point between the straight line C and the external peripheral end surface of the runner vane is denoted as D. In this case, the external peripheral end of the forward edge of the runner vane is located on the crossing point D. | 10-30-2014 |
Reika Ko, Chiba JP
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20120012556 | PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD - A plasma etching apparatus | 01-19-2012 |
Shigeru B.h. Ko, Aichi JP
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20140065193 | ZSCAN4 AS A MARKER FOR PANCREATIC STEM CELLS AND PROGENITOR CELLS AND USE THEREOF - ZSCAN4, a gene expressed in ES cells and 2-cell stage embryos, has been previously shown to regulate telomere elongation and genome stability in mouse ES cells. It is disclosed herein that in the adult human pancreas, a small number of ZSCAN4-positive cells are present among cells located in the islets of Langerhans, acini, and ducts. These data disclosed herein indicates that expression of ZSCAN4 is a marker for rare stem/progenitor cells in adult human pancreas. Thus, provided herein is a method of isolating pancreatic stem cells or progenitor cell from a sample by detecting expression of ZSCAN4. Also provided is a method of treating diabetes by isolating ZSCAN4+ pancreatic stem cells or progenitor cells, expanding the cells in vitro and transplanted the expanded cells into the subject. The expanded ZSCAN4 | 03-06-2014 |
Shunichi Ko, Yokohama JP
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20090213870 | TRANSMITTING/RECEIVING SYSTEM, NODE AND COMMUNICATION METHOD - A transmitting/receiving system includes a control field controlling a transmitting priority of a dynamic slot is included in each communication cycle, and a node of the transmitting/receiving system sets control information including a preferential usage request for a dynamic slot that the node transmits in the control field and notifies all nodes in the transmitting/receiving system of the preferential usage request for the dynamic slot. | 08-27-2009 |
Taishun Ko, Tokyo JP
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20150182864 | NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM, GAME CONTROL METHOD, SERVER DEVICE, AND INFORMATION PROCESSING SYSTEM - A non-transitory computer readable recording medium has stored thereon instructions to be executed on a computer providing terminal devices ( | 07-02-2015 |