Patent application number | Description | Published |
20080298998 | COPPER ALLOY FOR ELECTRIC AND ELECTRONIC EQUIPMENTS - A copper alloy for electric and electronic equipments, containing from 0.5 to 4.0 mass % of Ni, from 0.5 to 2.0 mass % of Co, and from 0.3 to 1.5 mass % of Si, with the balance of copper and inevitable impurities,
| 12-04-2008 |
20090202861 | Copper-based deposited alloy strip for contact material and process for producing the same - A copper-based deposited alloy strip for a contact material has a maximum value of a difference not larger than 100 MPa among three of tensile strengths, that are a tensile strength in a rolling direction thereof, a tensile strength in a direction crossing the rolling direction with an angle of 45 degrees, and a tensile strength in a direction crossing the rolling direction with an angle of 90 degrees. A process for producing the copper-based deposited alloy strip for a contact material includes the steps of: performing a solution heated treatment on a copper alloy strip; and performing an aging heat treatment on the copper alloy strip. | 08-13-2009 |
20090257909 | Copper alloy strip material for electrical/electronic equipment and process for producing the same - A copper alloy strip material for electrical/electronic equipment includes a copper alloy containing 2.0 to 5.0 mass % Ni, 0.43 to 1.5 mass % Si, and a remaining component formed of Cu and an unavoidable impurity. Three types of intermetallic compounds A, B, and C comprising Ni and Si in a total amount of 50 mass % or more are contained. The intermetallic compound A has a compound diameter of 0.3 μm to 2 μm, the intermetallic compound B has a compound diameter of 0.05 μm to less than 0.3 μm, and the intermetallic compound C has a compound diameter of more than 0.001 μm to less than 0.05 μm. | 10-15-2009 |
20100170595 | COPPER ALLOY MATERIAL, AND METHOD FOR PRODUCTION THEREOF - A copper alloy material according to the present invention is characterized in that the copper alloy material includes: an element X between 0.1% and 4% by mass, in which the element X represents one transition element or not less than two elements selected from Ni, Fe, Co and Cr; an element Y between 0.01% and 3% by mass, in which the element Y represents one element or not less than two elements selected from Ti, Si, Zr and Hf; and a remaining portion to be comprised of copper and an unavoidable impurity, wherein the copper alloy material has an electrical conductivity of not less than 50% IACS, an yield strength of not less than 600 MPa, and a stress relaxation rate of not higher than 20% as to be measured after the same is maintained for 1000 hours at a state under applying a stress of 80% of the yield strength. | 07-08-2010 |
20100187084 | SILVER-COATED STAINLESS STEEL STRIP FOR MOVABLE CONTACTS AND METHOD OF PRODUCING THE SAME - An electrical contact comprising a silver-coated stainless steel strip, which has an underlying layer comprising any one of nickel, cobalt, nickel alloys, and cobalt alloys, on at least a part of the surface of a stainless steel substrate, and has a silver or silver alloy layer formed as an upper layer, in which a copper or copper alloy layer with a thickness of 0.05 to 2.0 μm is provided between the silver or silver alloy layer and the underlying layer; and a producing method of the above-described electrical contact, in which the silver-coated stainless steel strip is subjected to a heat-treating in a non-oxidative atmosphere. | 07-29-2010 |
20100193092 | COPPER ALLOY FOR ELECTRICAL/ELECTRONIC DEVICE AND METHOD FOR PRODUCING THE SAME - A copper alloy for an electrical and electronic device in accordance with the present invention is characterized in that the copper alloy for an electrical and electronic device includes: nickel (Ni) between 1.5 mass % and 5.0 mass %; silicon (Si) between 0.4 mass % and 1.5 mass %; and a remaining portion formed of Cu and an unavoidable impurity, wherein a mass ratio between Nickel (Ni) and Silicon (Si) as Ni/Si is not smaller than two and not larger than seven, an average crystalline grain diameter is not smaller than 2 μm and not larger than 20 μm, and a standard deviation of the crystalline grain diameter is not larger than 10 μm. | 08-05-2010 |
20100203354 | FLATTED MATERIAL - Disclosed is a flatted material produced by conducting cold flatting of copper alloy including 0.1-1.0 mass % of Cu, 0.05-1.5 mass % of Sn, and 0.05-1.5 mass % of Zn, and comprising residue Cu and unavoidable impurities. In the flatted material, both of the stress relaxation rates in a direction parallel to the flatting direction and a direction perpendicular to the flatting direction are 50% or less as measured by an insertion type stress relaxation test at 150° C. after 1,000 hours. | 08-12-2010 |
20100221576 | COPPER ALLOY STRIP MATERIAL FOR ELECTRICAL/ELECTRONIC COMPONENTS - An copper alloy strip material for electrical/electronic components according to the present invention is characterized in that such the copper alloy strip material for electrical/electronic components includes: Ni as between 1.5 mass % and 4.0 mass %; Si as between 0.3 mass % and 1.5 mass %; and the balance being Cu and unavoidable impurities, wherein a mean roughness Ra of a surface roughness is not larger than 0.3 μm regarding the strip in a direction as right angle to a direction of a rolling therefor, a maximum height Ry thereof is not higher than 3.0 μm regarding the same therein, and there is positioned a peak position regarding a frequency curve, that represents a concave component of the surface roughness and/or a convex component thereof, at the plus side (the side for the convex component) comparing to an average value of the curve for meaning the surface roughness. | 09-02-2010 |
20100269963 | COPPER ALLOY MATERIAL EXCELLENT IN STRENGTH, BENDING WORKABILITY AND STRESS RELAXATION RESISTANCE, AND METHOD FOR PRODUCING THE SAME - A copper alloy material according to the present invention is characterized in that the same comprises: Ni between 2.8 mass % and 5.0 mass %; Si between 0.4 mass % and 1.7 mass %; S of which content is limited to less than 0.005 mass %; and the balance of the copper alloy material is composed of copper and unavoidable impurity, wherein a proof stress is stronger than or equal to 800 MPa, and the same is superior in bending workability and in stress relaxation resistance. | 10-28-2010 |
20100294534 | CONDUCTOR WIRE FOR ELECTRONIC APPARATUS AND ELECTRICAL WIRE FOR WIRING USING THE SAME - Disclosed herein is a conductor wire for electronic device, which has high strength and excellent electrical conductivity and is composed of a copper alloy containing 0.5-3.0 mass percent, 0.1-1.0 mass percent of silicon, and the balance being copper and inevitable impurities. The copper alloy may further contain 0.1-3.0 mass percent of nickel and may further contain the sum total of 0.05-1.0 mass percent of one or two or more elements selected from the group consisting of iron, silver, chromium, zirconium and titanium. The copper alloy may also contain the sum total of 0.01-3.0 mass percent of one or two or more elements selected from the group consisting of 0.05-0.5 mass percent of magnesium, 0.1-2.5 mass percent of zinc, 0.1-2.0 mass percent of tin, 0.01-0.5 mass percent of manganese and 0.01-0.5 mass percent of aluminum. | 11-25-2010 |
20100316879 | COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC COMPONENTS - A copper alloy material for electric/electronic components according to the present invention is characterized in that a average grain size of 1 to 50 μm that is designated by ((a+b)/2) in which a thickness of a grain is defined to be (a) and a width thereof is defined to be (b) which is on a cross section that is vertical to a rolling direction, an aspect ratio (a/b) thereof is between 0.5 and 1.0, an aspect ratio (a/b) of a grain before performing a bend working and an aspect ratio (a′/b′) of which a grain is effected by a tensile stress after performing a bend working of 90 degrees satisfy the following (Formula 1) of: | 12-16-2010 |
20100326573 | COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME - An copper alloy material for electric/electronic components
| 12-30-2010 |
20110005644 | COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC PARTS - A copper alloy material for an electric/electronic part, containing Co 0.5 to 2.5 mass % and Si 0.1 to 1.0 mass %, at a ratio of Co/Si of 3 to 5 in terms of mass ratio, with the balance of Cu and inevitable impurities, which is obtained by subjecting to a solution treatment at a temperature (° C.) from 800° C. to 960° C. and lower than −122.77X | 01-13-2011 |
20110038753 | COPPER ALLOY SHEET MATERIAL - A copper alloy sheet material which has a tensile strength of 730-820 MPa and contains at least nickel (Ni) and silicon (Si), with the remainder being copper (Cu) and inevitable impurities. When the sheet material has a shape capable of 180° tight bending and the width and thickness of this sheet material are expressed by W (unit: mm) and T (unit: mm) respectively, then the product of W and T is 0.16 or less. Preferably, the sheet material is constituted of an alloy containing nickel at 1.8-3.3 mass %, silicon at 0.4 mass %, and chromium (Cr) at 0.01-0.5 mass %, with the remainder being copper and inevitable impurities. The sheet material may further contain one or more of: at least one member selected among tin (Sn), magnesium (Mg), silver (Ag), manganese (Mn), titanium (Ti), iron (Fe), and phosphorus (P) in a total amount of 0.01-1 mass %; zinc (Zn) at 0.01-10 mass %, cobalt (Co) at and 0.01-1.5 mass %. | 02-17-2011 |
20110094635 | COPPER ALLOY - A method of producing a copper alloy containing a precipitate X composed of Ni and Si and a precipitate Y that comprises (a) Ni and 0% Si, (b) Si and 0% Ni, or (c) neither Ni nor Si, wherein the precipitate X has a grain size of 0.001 to 0.1 μm, and the precipitate Y has a grain size of 0.01 to 1 μm. | 04-28-2011 |
20110186187 | COPPER ALLOY - A method of producing a copper alloy containing: Ni and/or Si and at least one or more of B, Al, As, Hf, Zr, Cr, Ti, C, Fe, P, In, Sb, Mn, Ta, V, S, O, N, Misch metal (MM), Co, and Be, the copper alloy having a precipitate X composed of Ni and Si, and a precipitate Y composed of Ni and/or Si, and at least one or more of B, Al, As, Hf, Zr, Cr, Ti, C, Fe, P, In, Sb, Mn, Ta, V, S, O, N, Misch metal (MM), Co, and Be, in which a grain diameter of the precipitate Y is 0.01 to 2 μm. | 08-04-2011 |
20110186192 | COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC PARTS AND METHOD OF PRODUCING THE SAME - A copper alloy material for an electric/electronic part, having a composition comprising Co 0.5 to 2.0 mass % and Si 0.1 to 0.5 mass %, with the balance of Cu and inevitable impurities, in which a copper alloy of a matrix has a grain size of 3 to 35 μm, a precipitate composed of Co and Si has a particle size of 5 to 50 nm, the precipitate has a density of 1×10 | 08-04-2011 |
20110200479 | COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC PARTS - A copper alloy material for electric/electronic parts, containing Co and Si as additive elements, wherein, a compound A is dispersed, which is composed of Co and Si and has an average particle diameter of 5 nm or more but less than 50 nm, and at least one compound is dispersed, which is selected from: a compound B which does not contain one or any of Co and Si and has an average particle diameter from 50 to 500 nm, a compound C which contains both of Co and Si and another element and has an average particle diameter from 50 to 500 nm, and a compound D which is composed of Co and Si and has an average particle diameter from 50 to 500 nm; a grain size of the copper alloy matrix is 3 to 35 μm; and an electrical conductivity is 50% IACS or more. | 08-18-2011 |
20110200480 | COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC PARTS - A copper alloy material for electric/electronic parts, containing Co in an amount of 0.7 to 2.5 mass % and Si in an amount that gives a mass ratio of Co and Si (Co/Si ratio) within the range from 3.5 to 4.0, with the balance being Cu and unavoidable impurities, wherein the grain size is 3 to 15 μm. | 08-18-2011 |
20110266029 | ALUMINUM ALLOY WIRE MATERIAL - An aluminum alloy wire material, which has an alloy composition containing: 0.1 to 0.4 mass % of Fe, 0.1 to 0.3 mass % of Cu, 0.02 to 0.2 mass % of Mg, and 0.02 to 0.2 mass % of Si, and further containing 0.001 to 0.01 mass % of Ti and V in total, with the balance being Al and unavoidable impurities, in which a grain size is 5 to 25 μm in a vertical cross-section in a wire-drawing direction thereof, and an average creep rate between 1 and 100 hours is 1×10 | 11-03-2011 |
20110272175 | ALUMINUM ALLOY WIRE MATERIAL - An aluminum alloy wire material, which has an alloy composition containing: 0.1 to 0.4 mass % of Fe, 0.1 to 0.3 mass % of Cu, 0.02 to 0.2 mass % of Mg, and 0.02 to 0.2 mass % of Si, and further containing 0.001 to 0.01 mass % of Ti and V in total, with the balance being Al and unavoidable impurities, in which a grain size is 5 to 25 μm in a vertical cross-section in a wire-drawing direction of the wire material, in which, according to JIS Z 2241, a tensile strength (TS) is 80 MPa or more, an elongation (El) is 15% or more, and a 0.2% yield strength (YS; MPa) satisfies, together with the TS, a relationship represented by formula: 1.5≦(TS/YS)≦3, and in which an electrical conductivity is 55% IACS or more. | 11-10-2011 |
20130126055 | ALUMINUM ALLOY CONDUCTOR AND METHOD OF PRODUCING THE SAME - An aluminum alloy conductor, having a specific aluminum alloy composition of Al—Fe—Cu—Mg—Si—(TiN) or Al—Fe—(Cu/Mg/Si)—(TiN), in which, on a cross-section vertical to a wire-drawing direction, a grain size is 1 to 20 μm, and a distribution density of a second phase with a size of 10 to 200 nm is 1 to 10 | 05-23-2013 |