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Wolodymyr Czubatyj
WARREN, MI US
1. 20090166601 Non-volatile programmable variable resistance element 07-02-20092. 20090095951 Memory Device With Low Reset Current - electronic device includes a first electrode and a second electrode 04-16-2009
3. 20090057645 Memory element with improved contacts - phase-change memory element comprising a phase-change memory material, a first electrical contact and a second 03-05-2009
4. 20080273372 Method of Programming Multi-Layer Chalcogenide Devices 11-06-2008
5. 20080224120 Phase change device with offset contact - programmable resistance memory combines multiple cells into a block that includes one or more shared 09-18-2008