Patent application number | Description | Published |
20080203390 | METHOD FOR MANUFACTURING A SIGNAL LINE, THIN FILM TRANSISTOR PANEL, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR PANEL - A method for manufacturing a thin film transistor array panel includes forming a gate line on a substrate; sequentially forming a gate insulating layer, a silicon layer, and a conductor layer including a lower layer and an upper layer on the gate line, forming a photoresist film, on the conductor layer, patterning the photoresist film to form a photoresist pattern including a first portion and a second portion having a greater thickness than the first portion, etching the upper layer and the lower layer by using the photoresist pattern as art etch mask, etching the silicon layer by using the photoresist pattern as an etch mask to form a semiconductor, removing the second portion of the photoresist pattern by using an etch back process, selectively wet-etching the upper layer of the conductor layer by using the photoresist pattern as an etch mask, dry-etching the lower layer of the conductor layer by using the photoresist pattern as an etch mask to form a data line and a drain electrode including remaining upper and lower layers, and forming a pixel electrode connected to the drain electrode. | 08-28-2008 |
20080224092 | Etchant for metal - An etchant for a metal is described. In one example, the etchant includes ammonium persulfate ((NH | 09-18-2008 |
20080248617 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a base substrate, a first metal pattern, a gate insulating layer, a second metal pattern, a channel layer and a pixel electrode. The first metal pattern is formed on the base substrate, and includes a gate line and a gate electrode of a switching element. The gate insulating layer is formed on the base substrate including the first metal pattern. The second metal pattern is formed on the gate insulating layer, and includes a source electrode, a drain electrode and a source line. The channel layer is formed under the second metal pattern, and is patterned to have substantially a same side surface as a side surface of the second metal pattern. The pixel electrode is electrically connected to the drain electrode. Therefore, an afterimage on a display panel, thus improving display quality. | 10-09-2008 |
20090017574 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY APPARATUS HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY APPARATUS - A thin film transistor includes a gate electrode on a substrate, a gate insulating layer on the substrate, a channel pattern, a source electrode and a drain electrode. The channel pattern includes a semiconductor pattern formed on the gate electrode and overlaying the gate electrode as well as first and second conductive adhesive patterns formed on the semiconductor pattern and spaced apart from each other. The source electrode includes a first barrier pattern, a source pattern and a first capping pattern sequentially formed on the first conductive adhesive pattern. The drain electrode includes a second barrier pattern, a drain pattern and a second capping pattern sequentially formed on the second conductive adhesive pattern. Etched portions of the first and second conductive adhesive patterns have a substantially vertical profile to prevent the exposure of the source and drain electrodes, thereby improving the characteristics of the thin film transistor. | 01-15-2009 |
20090170037 | COMPOSITION FOR REMOVING PHOTORESIST AND METHOD OF MANUFACTURING AN ARRAY SUBSTRATE USING THE SAME - A composition for removing a photoresist includes a) an amine compound having a cyclic amine and/or a diamine, b) a glycol ether compound, c) a corrosion inhibitor and d) a polar solvent. The composition further includes a stripping promoter. Further disclosed is a method of manufacturing an array substrate using the composition for removing a photoresist. | 07-02-2009 |
20090184319 | DISPLAY SUBSTRATE AND A METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE - A method of manufacturing a display substrate is described. In the method, a gate line and a gate electrode are formed on a base substrate. A source metal layer is formed on the base substrate having the gate line and the gate electrode. A data line, a source electrode and a drain electrode are formed by etching the source metal layer by using an etching gas. An additive gas is provided to the base substrate having the drain electrode so that the additive gas reacts with an etching component of the etching gas to remove a by-product formed at an exposed portion of the data line, the source electrode and drain electrode. Thus, corrosion of the fine pattern due to an etching gas may be prevented and/or reduced. | 07-23-2009 |
20090236627 | METHOD OF FORMING METAL WIRING - Provided is a method of forming metal wiring. The method includes forming a photosensitive film pattern on a substrate, hydrophobicizing at least part of the photosensitive film pattern, coating metal ink on the substrate having the photosensitive film pattern, forming a seed layer, and forming a metal layer. Alternatively, a trench is formed by using the photosensitive film pattern as a mask, and metal aerosol is sprayed to form the seed layer and then the metal layer. In this method, there is no need to form a metal thin film on the photosensitive film pattern when the seed layer is formed. As a result, less metal is wasted, which, in turn, significantly reduces manufacturing costs. | 09-24-2009 |
20100051934 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel and a method of manufacturing the same are provided according to one or more embodiments. In an embodiment, a method includes: forming a gate line on an insulation substrate; stacking a gate insulating layer, an oxide semiconductor layer, a first barrier layer, and a first copper layer on the gate line; performing a photolithography process on the oxide semiconductor layer, the first barrier layer, and the first copper layer and forming a data line including a source electrode, a drain electrode, and an oxide semiconductor pattern; forming a passivation layer having the contact hole that exposes the drain electrode on the data line and the drain electrode; and forming a pixel electrode that is connected to the drain electrode through the contact hole on the passivation layer, wherein the forming of a data line, a drain electrode, and an oxide semiconductor pattern includes wet etching the first copper layer and then wet etching the first barrier layer and the oxide semiconductor layer. | 03-04-2010 |
20100099595 | MANUFACTURING AND CLEANSING OF THIN FILM TRANSISTOR PANELS - A manufacturing a thin film transistor array panel includes depositing a first thin film including aluminum on a substrate, patterning the first thin film by photolithography and etching, cleansing the substrate including the first thin film, and depositing a second thin film on the cleansed substrate. The cleansing is performed using a cleansing material including ultrapure water, cyclic amine, pyrogallol, benzotrizole, and methyl glycol. The cleansing material includes ultrapure water at about 85 wt % to about 99 wt %, cyclic amine at about 0.01 wt % to about 1.0 wt %, pyrogallol at about 0.01 wt % to 1.0 wt %, benzotrizole at about 0.01 wt % to 1.0 wt %, and methyl glycol at about 0.01 wt % to 1.0 wt %. | 04-22-2010 |
20100120209 | ETCHANT COMPOSITION, AND METHOD OF FABRICATING METAL PATTERN AND THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME - An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition. | 05-13-2010 |
20100144076 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin film transistor array panel including an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer formed on the gate line, a drain electrode and a data line having a source electrode formed on the gate insulating layer wherein the drain electrode faces the source electrode with a gap therebetween, and a pixel electrode connected to the drain electrode. At least one of the gate line, the data line, and the drain electrode includes a first conductive layer made of a conductive oxide and a second conductive layer of Ag that is deposited adjacent to the first conductive layer. | 06-10-2010 |
20100149476 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes; a base substrate, a deformation preventing layer disposed on a lower surface of the base substrate, wherein the deformation preventing layer applies a force to the base substrate to prevent the base substrate from bending, a gate line disposed on an upper surface of the base substrate, a data line disposed on the base substrate, and a pixel electrode disposed on the base substrate. | 06-17-2010 |
20100149481 | MANUFACTURING METHOD OF MOLD AND METHOD FOR FORMING LIQUID CRYSTAL DISPLAY USING THE SAME - The present invention relates to a liquid crystal display (LDC) and in particular, a method of manufacturing a mold to be used in LCDs. The method includes the following steps: forming a first photosensitive film on a substrate; etching the substrate by using the first photosensitive film as a mask to form a first groove; removing the first photosensitive film; forming a second photosensitive film covering the first groove on the substrate; and etching the substrate by using the second photosensitive film as a mask to form a second groove. The method, according to embodiments of the invention, helps reduce the time and/or cost of manufacturing a liquid crystal display. | 06-17-2010 |
20100151610 | COMPOSITION FOR PHOTORESIST STRIPPER AND METHOD OF FABRICATING THIN FILM TRANSISTOR ARRAY SUBSTRATE - A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor. | 06-17-2010 |
20100155730 | THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - In the manufacturing process of the thin film transistor array panel according to an exemplary embodiment of the present invention using three masks, the metal oxide semiconductor or the transparent conductive oxide is used, thereby executing an efficient lift-off process. | 06-24-2010 |
20100182525 | DISPLAY SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME - A display substrate includes an insulating substrate, a thin film transistor, a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode, a semiconductor pattern, a first electrode, and a second electrode. The control electrode is on the insulating substrate. The semiconductor pattern is on the control electrode. The first electrode is on the semiconductor pattern. The second electrode is spaced apart from the first electrode on the semiconductor pattern. The contact electrode includes a contact portion and an undercut portion. The contact portion is electrically connected to the second electrode to partially expose the semiconductor pattern. The undercut portion is electrically connected to the contact portion to cover the semiconductor pattern. The pixel electrode is electrically connected to the second electrode through the contact portion of the contact electrode. | 07-22-2010 |
20100270554 | METHOD OF REFORMING A METAL PATTERN, ARRAY SUBSTRATE, AND METHOD OF MANUFACTURING THE ARRAY SUBSTRATE - A method of reforming a metal pattern for improving the productivity and reliability of a manufacturing process, an array substrate and a method of manufacturing the array substrate are disclosed. In the method, a first wiring pattern is formed on an insulation substrate. The first wiring pattern is removed. A second wiring pattern is formed on an embossed pattern by using the embossed pattern as an alignment mask. The embossed pattern is defined by a recess formed on a surface of the insulation substrate. Accordingly, the insulation substrate having the recess formed thereon may not be discarded, and may be reused in forming the first wiring pattern. In addition, the embossed pattern defined by the recess is used as an alignment mask, so that the alignment reliability of a metal pattern may be improved. | 10-28-2010 |
20100291722 | ETCHANT AND METHOD OF MANUFACTURING AN ARRAY SUBSTRATE USING THE SAME - An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH | 11-18-2010 |
20110014737 | THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode connected to the gate line and formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate insulating layer which covers the gate line and the gate electrode, a semiconductor layer formed on the gate insulating layer to overlap the gate electrode, a data line which intersects the gate line, a source electrode connected to the data line to overlap a part of the semiconductor layer, and a drain electrode connected to the pixel electrode to overlap a part of the semiconductor layer. | 01-20-2011 |
20110151631 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF - A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor. | 06-23-2011 |
20110183476 | ETCHING SOLUTION COMPOSITION AND METHOD OF ETCHING USING THE SAME - An etchant composition for etching a transparent electrode is provided, the etchant composition includes an inorganic acid, an ammonium (NH | 07-28-2011 |
20110226727 | ETCHANT FOR METAL WIRING AND METHOD FOR MANUFACTURING METAL WIRING USING THE SAME - Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound. | 09-22-2011 |
20110256712 | ETCHANT FOR ELECTRODE AND METHOD OF FABRICATING THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME - The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %. | 10-20-2011 |
20120064678 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY PANEL - A method for manufacturing a TFT array panel includes forming a photosensitive film pattern with first and second parts in first and second sections on a metal layer, etching the metal layer of a third section using the film pattern as a mask to form first and second metal patterns, etching the film pattern to remove the first part, etching first and second amorphous silicon layers of the third section using the second part as a mask to form an amorphous silicon pattern and a semiconductor, etching the first and second metal patterns of the first section using the second part as a mask to form a source electrode and a drain electrode including an upper layer and a lower layer, and etching the amorphous silicon pattern of the region corresponding to the first section by using the second part as a mask to form an ohmic contact. | 03-15-2012 |
20120133873 | LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME - A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode. | 05-31-2012 |
20120153287 | ETCHANT, DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME - An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed. | 06-21-2012 |
20120295380 | ETCHANT AND METHOD OF MANUFACTURING AN ARRAY SUBSTRATE USING THE SAME - An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH | 11-22-2012 |
20130015471 | ETCHANT FOR METAL LAYER INCLUDING COPPER OR A COPPER ALLOY, METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME AND DISPLAY SUBSTRATEAANM PARK; Hong-SickAACI Suwon-siAACO KRAAGP PARK; Hong-Sick Suwon-si KRAANM Lee; Wang-WooAACI Suwon-siAACO KRAAGP Lee; Wang-Woo Suwon-si KR - An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a corrosion inhibition agent including an azole-based compound and a remainder of water. | 01-17-2013 |
20130017636 | COMPOSITION FOR REMOVING A PHOTORESIST AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE USING THE COMPOSITIONAANM KIM; Bong-KyunAACI Hwaseong-siAACO KRAAGP KIM; Bong-Kyun Hwaseong-si KRAANM CHOI; Shin-IlAACI Hwaseong-siAACO KRAAGP CHOI; Shin-Il Hwaseong-si KRAANM PARK; Hong-SickAACI Suwon-siAACO KRAAGP PARK; Hong-Sick Suwon-si KRAANM LEE; Wang-WooAACI Suwon-siAACO KRAAGP LEE; Wang-Woo Suwon-si KRAANM JANG; Seok-JunAACI Asan-siAACO KRAAGP JANG; Seok-Jun Asan-si KRAANM KIM; Byung-UkAACI Hwaseong-siAACO KRAAGP KIM; Byung-Uk Hwaseong-si KRAANM PARK; Sun-JooAACI Pyeongtaek-siAACO KRAAGP PARK; Sun-Joo Pyeongtaek-si KRAANM YOON; Suk-IlAACI Suwon-siAACO KRAAGP YOON; Suk-Il Suwon-si KRAANM JEONG; Jong-HyunAACI SeoulAACO KRAAGP JEONG; Jong-Hyun Seoul KRAANM HUR; Soon-BeomAACI Anyang-siAACO KRAAGP HUR; Soon-Beom Anyang-si KR - A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide (“TMAH”), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition. | 01-17-2013 |
20130099242 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate having a low resistance signal line and a method of manufacturing the display substrate are provided. The display substrate includes an insulation substrate, a gate line, a data line and a pixel electrode. The gate line gate line is formed through a sub-trench and an opening portion. The sub-trench is formed in the insulation substrate and the opening portion is formed through a planarization layer on the insulation substrate at a position corresponding to the position of the sub-trench. The data line crosses the gate line. The pixel electrode is electrically connected to the gate line and the data line through a switching element. Thus, a signal line is formed through a trench formed by using a planarization layer and an insulation substrate, so that a resistance of the signal line may be reduced. | 04-25-2013 |
20130115727 | ETCHING COMPOSITION AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SYSTEM - An etching composition and a method of manufacturing a display substrate using the etching composition are disclosed. The etching composition includes phosphoric acid (H | 05-09-2013 |
20130115733 | ETCHANT COMPOSITION AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING THE SAME - Provided is an etchant composition. The etchant composition according to an exemplary embodiment of the present invention includes ammonium persulfate ((NH | 05-09-2013 |
20130115770 | ETCHING COMPOSITION, METHOD OF FORMING A METAL PATTERN AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water. The etching composition having improved stability during storage and an increased capacity for etching | 05-09-2013 |
20130146902 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a metal pattern, a first insulation layer pattern and a second insulation layer pattern. The metal pattern is on a base substrate. The first insulation pattern is on the metal pattern and includes one of a silicon nitride (SiN | 06-13-2013 |
20130178010 | METHOD OF FORMING A METAL PATTERN AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - A method of forming a metal pattern is provided. In the method, a first titanium layer, a copper layer and a second titanium layer are sequentially formed on a substrate. A photo pattern is formed on the second titanium layer. The first titanium layer, the copper layer and the second titanium layer are patterned using the photo pattern to form a first titanium pattern, a copper pattern formed on the first titanium pattern and a second titanium pattern formed on the copper pattern. Therefore, a fine metal pattern may be formed. | 07-11-2013 |
20130183822 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING TRENCH, METAL WIRE, AND THIN FILM TRANSISTOR ARRAY PANEL - The present invention relates to a method for forming a trench that can remove residual particles in a trench using a metal mask, a method for forming a metal wire, and a method for manufacturing a thin film transistor array panel. The method for forming a trench includes: forming a first insulating layer on a substrate; forming a first metal layer on the first insulating layer; forming an opening by patterning the first metal layer; forming a trench by dry-etching the first insulating layer using the patterned first metal layer as a mask; and wet-etching the substrate. The dry-etching is performed using a main etching gas and a first auxiliary etching gas, and the first auxiliary etching gas includes argon. | 07-18-2013 |
20130252384 | TRENCH FORMING METHOD, METAL WIRING FORMING METHOD, AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL - A method of forming a thin film transistor array panel includes: forming a first insulating layer on a substrate; forming an amorphous carbon layer on the first insulating layer; forming a second insulating layer on the amorphous carbon layer; forming an opening in the amorphous carbon layer by patterning the second insulating layer and the amorphous carbon layer; and forming a trench in the first insulating layer by etching the first insulating layer, the etching the first insulating layer using the amorphous carbon layer including the opening as a mask. | 09-26-2013 |
20130277666 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL, AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel according to an exemplary embodiment of the invention includes: a substrate; a gate line positioned on the substrate and including a gate electrode; a gate insulating layer positioned on the gate line; an oxide semiconductor layer positioned on the substrate; a source electrode and a drain electrode positioned on the oxide semiconductor layer; a first insulating layer positioned on the source electrode and the drain electrode and including a first contact hole; a data line positioned on the first insulating layer and intersecting the gate line; and a pixel electrode over the first insulating layer. The source electrode and the drain electrode each comprise a metal oxide. The data line is electrically connected to the source electrode through the first contact hole. | 10-24-2013 |
20140011352 | METAL WIRE ETCHANT AND METHOD OF FORMING METAL WIRE USING THE SAME - A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same. | 01-09-2014 |
20140024206 | ETCHANT COMPOSITION AND METHOD OF FORMING METAL WIRE AND THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME - A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device. | 01-23-2014 |
20140038348 | ETCHANT COMPOSITION AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR USING THE SAME - An etchant composition includes ammonium persulfate (((NH | 02-06-2014 |
20140097006 | ETCHANT COMPOSITION, METAL WIRING, AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - A wet etching composition usable for etching a copper-based wiring layer includes between about 40% by weight to about 60% by weight of phosphoric acid, between about 1% by weight to about 10% by weight of nitric acid, between about 3% by weight to about 15% by weight of acetic acid, between about 0.01% by weight to about 0.1% by weight of a copper-ion compound, between about 1% by weight to about 10% by weight of a nitric salt, between about 1% by weight to about 10% by weight of an acetic salt, and a remainder of water | 04-10-2014 |
20140125904 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes: a substrate; a gate line and a data line disposed on the substrate; a semiconductor layer disposed on the substrate; first and second field generating electrodes disposed on the substrate; and a first protecting layer formed from the same layer as the first field generating electrode and covering at least a portion of the data line. | 05-08-2014 |
20140139795 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - A liquid crystal display is provided. The liquid crystal display includes a substrate, a thin film transistor disposed on the substrate, a pixel electrode connected with a terminal of the thin film transistor, a microcavity disposed on the pixel electrode, the microcavity including a liquid crystal injection hole disposed at an edge of the microcavity, a supporting member disposed on the microcavity, a first hydrophobic layer disposed on an edge portion of the supporting member, and a capping layer disposed on the supporting member with the capping layer covering the liquid crystal injection hole. | 05-22-2014 |
20140204300 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - The present invention relates to a display device and a manufacturing method thereof, wherein a spoilage layer generated in a manufacturing process is removed, and a manufacturing method of a display device according to an exemplary embodiment of the present invention includes: forming a thin film transistor on a substrate including a plurality of pixel areas; forming a pixel electrode connected to the thin film transistor in the pixel area; forming a sacrificial layer on the pixel electrode; forming a barrier layer on the sacrificial layer; forming a common electrode on the barrier layer; forming a roof layer on the common electrode; patterning the barrier layer, the common electrode, and the roof layer to exposed a portion of the sacrificial layer thereby forming an injection hole; removing the sacrificial layer to form a microcavity for a plurality of pixel areas; removing the barrier layer. | 07-24-2014 |
20140295599 | ETCHANT, DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME - An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed. | 10-02-2014 |
20140295626 | ETCHANT COMPOSITION, AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME - An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by weight to about 10 percent by weight of a nitrate, about 6 percent by weight to about 15 percent by weight of a sulfonic acid, about 1 percent by weight to about 5 percent by weight of an amine compound including a carboxyl group, about 0.1 percent by weight to about 1 percent by weight of a water-soluble amino acid, about 0.01 percent by weight to about 1 percent by weight of an azole compound, and water. | 10-02-2014 |
20140322845 | DEVICE FOR MONITORING LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY - A device for monitoring a liquid crystal display includes: a substrate including a display region and a non-display region disposed at an edge of the display region. The display region includes: a thin film transistor disposed on the substrate, a pixel electrode disposed on the substrate and connected to the thin film transistor, a first sacrificial layer disposed on the pixel electrode, and a roof layer disposed on the sacrificial layer. The non-display region includes: a second sacrificial layer disposed on the substrate, and the roof layer disposed on the second sacrificial layer. The first sacrificial layer has a first longitudinal dimension and a first cross-sectional area, and the second sacrificial layer has a second longitudinal dimension and a second cross-sectional area. The first cross-sectional area is the same as the second cross-sectional area. The second longitudinal dimension is greater than the first longitudinal dimension. | 10-30-2014 |