Patent application number | Description | Published |
20090200581 | High breakdown voltage double-gate semiconductor device - A double-gate semiconductor device provides a high breakdown voltage allowing for a large excursion of the output voltage that is useful for power applications. The double-gate semiconductor device may be considered a double-gate device including a MOS gate and a junction gate, in which the bias of the junction gate may be a function of the gate voltage of the MOS gate. The breakdown voltage of the double-gate semiconductor device is the sum of the breakdown voltages of the MOS gate and the junction gate. Because an individual junction gate has an intrinsically high breakdown voltage, the breakdown voltage of the double-gate semiconductor device is greater than the breakdown voltage of an individual MOS gate. The double-gate semiconductor device provides improved RF capability in addition to operability at higher power levels as compared to conventional transistor devices. The double-gate semiconductor device may also be fabricated in a higher spatial density configuration such that a common implantation between the MOS gate and the junction gate is eliminated. | 08-13-2009 |
20110063025 | High Breakdown Voltage Double-Gate Semiconductor Device - A double-gate semiconductor device includes a MOS gate and a junction gate, in which the bias of the junction gate is a function of the gate voltage of the MOS gate. The breakdown voltage of the double-gate semiconductor device is the sum of the breakdown voltages of the MOS gate and the junction gate. The double-gate semiconductor device provides improved RF capability in addition to operability at higher power levels as compared to conventional transistor devices. The double-gate semiconductor device may also be fabricated in a higher spatial density configuration such that a common implantation between the MOS gate and the junction gate is eliminated. | 03-17-2011 |
20110068376 | High Breakdown Voltage Double-Gate Semiconductor Device - A double-gate semiconductor device includes a MOS gate and a junction gate, in which the bias of the junction gate is a function of the gate voltage of the MOS gate. The breakdown voltage of the double-gate semiconductor device is the sum of the breakdown voltages of the MOS gate and the junction gate. The double-gate semiconductor device provides improved RF capability in addition to operability at higher power levels as compared to conventional transistor devices. The double-gate semiconductor device may also be fabricated in a higher spatial density configuration such that a common implantation between the MOS gate and the junction gate is eliminated. | 03-24-2011 |
20110269419 | RF Switches - RF switching devices are provided that alternatively couple an antenna to either a transmitter amplifier or a receiver amplifier. An exemplary RF switching device comprises two valves, one for a receiver transmission line between the antenna and the receiver amplifier, the other for a transmitter transmission line between the antenna and the power amplifier. Each valve is switchably coupled between ground and its transmission line. When coupled to ground, current flowing through the valve increases the impedance of the transmission line thereby attenuating signals on the transmission line. When decoupled from ground, the impedance of the transmission line is essentially unaffected. The pair of valves is controlled such that when one valve is on the other valve is off, and vice versa, so that the antenna is either receiving signals from the power amplifier or the receiver amplifier is receiving signals from the antenna. | 11-03-2011 |
20120205724 | ELECTRONIC CIRCUITS INCLUDING A MOSFET AND A DUAL-GATE JFET - Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths. | 08-16-2012 |
20130248945 | Electronic Circuits including a MOSFET and a Dual-Gate JFET - Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths. | 09-26-2013 |
20130303093 | RF Switches - RF switching devices are provided that alternatively couple an antenna to either a transmitter amplifier or a receiver amplifier. An exemplary RF switching device comprises two valves, one for a receiver transmission line between the antenna and the receiver amplifier, the other for a transmitter transmission line between the antenna and the power amplifier. Each valve is switchably coupled between ground and its transmission line. When coupled to ground, current flowing through the valve increases the impedance of the transmission line thereby attenuating signals on the transmission line. When decoupled from ground, the impedance of the transmission line is essentially unaffected. The pair of valves is controlled such that when one valve is on the other valve is off, and vice versa, so that the antenna is either receiving signals from the power amplifier or the receiver amplifier is receiving signals from the antenna. | 11-14-2013 |
20150054038 | Electronic Circuits including a MOSFET and a Dual-Gate JFET - Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths. | 02-26-2015 |
Patent application number | Description | Published |
20100031377 | Prevention and treatment of synucleinopathic and amyloidogenic disease - The invention provides improved agents and methods for treatment of diseases associated with synucleinopathic diseases, including Lewy bodies of alpha-synuclein in the brain of a patient. Such methods entail administering agents that induce a beneficial immunogenic response against the Lewy body. The methods are particularly useful for prophylactic and therapeutic treatment of Parkinson's disease. | 02-04-2010 |
20100086545 | Prevention and Treatment of Synucleinopathic and Amyloidogenic Disease - The invention provides improved agents and methods for treatment of diseases associated with synucleinopathic diseases, including Lewy bodies of alpha-synuclein in the brain of a patient. Such methods entail administering agents that induce a beneficial immunogenic response against the Lewy body. The methods are particularly useful for prophylactic and therapeutic treatment of Parkinson's disease. | 04-08-2010 |
20100226969 | COMPOUNDS FOR INHIBITING PROTEIN AGGREGATION, AND METHODS FOR MAKING AND USING THEM - The invention provides compositions comprising protein aggregation inhibitors, and pharmaceutical compositions comprising them, and methods for making and using them, including methods for preventing, reversing, slowing or inhibiting protein aggregation, e.g., for treating diseases that are characterized by protein aggregation—including some degenerative neurological diseases such as Parkinson's disease. In one aspect, the compositions of the invention specifically target synuclein, beta-amyloid and/or tau protein aggregates, and the methods of the invention can be used to specifically prevent, reverse, slow or inhibit synuclein, beta-amyloid and/or tau protein aggregation. In alternative embodiments, the compositions and methods of the invention, are used to treat, prevent or ameliorate (including slowing the progression of) degenerative neurological diseases related to or caused by protein aggregation, e.g., synuclein, beta-amyloid and/or tau protein aggregation. In one aspect, compositions and methods of this invention are used to treat, prevent or ameliorate (including slowing the progression of) Parkinson's disease, Alzheimer's Disease (AD), Lewy body disease (LBD) and Multiple system atrophy (MSA). | 09-09-2010 |
20110135660 | PREVENTION AND TREATMENT OF SYNUCLEINOPATHIC DISEASE - The invention provides improved agents and methods for treatment of diseases associated with synucleinopathic diseases, including Lewy bodies of alpha-synuclein in the brain of a patient. Such methods entail administering agents that induce a beneficial immunogenic response against the Lewy body. The methods are particularly useful for prophylactic and therapeutic treatment of Parkinson's disease. | 06-09-2011 |
20110223240 | COMPOUNDS FOR REVERSING AND INHIBITING PROTEIN AGGREGATION, AND METHODS FOR MAKING AND USING THEM - The invention provides compositions for increasing the clearance of protein aggregates, and pharmaceutical compositions comprising them, and methods for making and using them, including methods for accelerating protein aggregate clearance in the CNS, e.g., for treating diseases that are characterized by protein aggregation—including some degenerative neurological diseases such as Parkinson's disease. In one aspect, the compositions of the invention specifically target synuclein, beta-amyloid and/or tau protein aggregates, and the methods of the invention can be used to specifically prevent, reverse, slow or inhibit synuclein, beta-amyloid and/or tau protein aggregation. In alternative embodiments, the compositions and methods of the invention, are used to treat, prevent, reverse (partially or completely) or ameliorate (including slowing the progression of) degenerative neurological diseases related to or caused by protein aggregation, e.g., synuclein, beta-amyloid and/or tau protein aggregation. In one aspect, compositions and methods of this invention are used to treat, prevent or ameliorate (including slowing the progression of) Parkinson's disease, fronto-temporal dementia (FTD), Alzheimer's Disease (AD), Lewy body disease (LBD) and Multiple system atrophy (MSA). | 09-15-2011 |
20120142902 | Prevention and Treatment of Synucleinopathic and Amyloidogenic Disease - The invention provides improved agents and methods for treatment of diseases associated with synucleinopathic diseases, including Lewy bodies of alpha-synuclein in the brain of a patient. Such methods entail administering agents that induce a beneficial immunogenic response against the Lewy body. The methods are particularly useful for prophylactic and therapeutic treatment of Parkinson's disease. | 06-07-2012 |
20120201842 | PREVENTION AND TREATMENT OF SYNUCLEINOPATHIC AND AMYLOIDOGENIC DISEASE - The invention provides improved agents and methods for treatment of diseases associated with synucleinopathic diseases, including Lewy bodies of alpha-synuclein in the brain of a patient. Such methods entail administering agents that induce a beneficial immunogenic response against the Lewy body. The methods are particularly useful prophylactic and therapeutic treatment of Parkinson's disease. | 08-09-2012 |
20130035342 | Compound Suitable for the Treatment of Synucleopathies - The present invention relates to a compound of formula (I): Wherein R | 02-07-2013 |
20140364610 | COMPOUND SUITABLE FOR THE TREATMENT OF SYNUCLEOPATHIES - The present invention relates to certain heteroaromatic compounds of Formula (Ia), or pharmaceutically acceptable salts thereof, and uses of such compounds in the treatment of synucleopathies. | 12-11-2014 |
Patent application number | Description | Published |
20110051231 | LIGHT EXCITED LIMITING WINDOW - An optical power limiter comprises an input optical transmission element, an output optical transmission element, and a power-limiting element disposed between the input and output elements for transmitting optical signals from the input element to the output element. The power-limiting element comprises an optical-limiting solid mixture containing particles of at least one material that produces reversible thermal changes in response to light above a predetermined optical power level, thereby changing the optical transmission properties of the power-limiting element. | 03-03-2011 |
20120155801 | NANOTUBE BASED OPTICAL FUSE DEVICE AND METHOD - An optical fuse or energy-switching-off device includes an optical waveguide having an input section and an output section, the two sections forming a pair of opposed surfaces extending transversely through the axes of the waveguide sections. A substantially transparent material is disposed between the opposed surfaces and comprises an electrically conductive nanotube web immersed in dielectric material, where the nanotubes are not in electrical contact with each other. The substantially transparent material forms a plasma when exposed to optical signals propagating within the optical waveguide with an optical power level above a predetermined threshold, and the plasma damages the opposed surfaces sufficiently to render the surfaces substantially opaque to light propagating within the input section of the optical waveguide so as to prevent the transmission of such light. | 06-21-2012 |
20120257854 | NANOTUBE BASED OPTICAL FUSE DEVICE AND METHOD - An optical fuse or energy-switching-off device includes an optical waveguide having an input section and an output section, the two sections forming a pair of opposed surfaces extending transversely through the axes of the waveguide sections. A substantially transparent material is disposed between the opposed surfaces and comprises an electrically conductive nanotube web immersed in dielectric material, where the nanotubes are not in electrical contact with each other. The substantially transparent material forms a plasma when exposed to optical signals propagating within the optical waveguide with an optical power level above a predetermined threshold, and the plasma damages the opposed surfaces sufficiently to render the surfaces substantially opaque to light propagating within the input section of the optical waveguide so as to prevent the transmission of such light. | 10-11-2012 |