Patent application number | Description | Published |
20090200523 | YTTRIUM OXIDE MATERIAL, MEMBER FOR USE IN SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR PRODUCING YTTRIUM OXIDE MATERIAL - A substrate of an electrostatic chuck, which is a member for use in a semiconductor manufacturing apparatus, is formed of an yttrium oxide material that contains yttrium oxide (Y | 08-13-2009 |
20090233087 | YTTRIUM OXIDE MATERIAL, MEMBER FOR SEMICONDUCTOR-MANUFACTURING APPARATUS, AND METHOD FOR PRODUCING YTTRIUM OXIDE MATERIAL - An electrostatic chuck that is a member for a semiconductor-manufacturing apparatus contains an yttrium oxide material containing first inorganic particles and second inorganic particles. The first inorganic particles form solid solutions in yttrium oxide, can be precipitated from yttrium oxide, and are present in grains of yttrium oxide. The second inorganic particles can form solid solutions in the first inorganic particles, are unlikely to form any solid solution in yttrium oxide, and are present at boundaries between the yttrium oxide grains. The first inorganic particles contain at least one of ZrO | 09-17-2009 |
20090239734 | CORDIERITE CERAMIC AND METHOD OF PRODUCING THE SAME - A method of producing cordierite ceramic where the degree of stacking faults and the particle diameter of kaolinite used as a component of a cordierite-forming raw material are appropriately adjusted so that microcracks having an average width of 0.3 μm or more are introduced into the resulting cordierite ceramic to produce a high-quality cordierite ceramic that includes a cordierite crystal oriented in a specific direction and has a porosity of 25% or more and a coefficient of thermal expansion of 0.30×10 | 09-24-2009 |
20090247389 | METHOD FOR MANUFACTURING CORDIERITE CERAMICS - There is provided a method for manufacturing cordierite ceramics by forming and heating a cordierite-forming raw material containing α-alumina. A degree of orientation [expressed by (I | 10-01-2009 |
20100056358 | ALUMINUM OXIDE SINTERED PRODUCT AND METHOD FOR PRODUCING THE SAME - An aluminum oxide sintered product including a layer phase containing a rare-earth element and fluorine among grains of aluminum oxide serving as a main component, or a phase containing a rare-earth element and fluorine along edges of grains of aluminum oxide serving as a main component. The product includes a phase containing a rare-earth element and a fluorine element among grains of aluminum oxide, the phase not being in the form of localized dots but in the form of line segments, when viewed in an SEM image. The product can be readily adjusted to have a volume resistivity in the range of 1×10 | 03-04-2010 |
20100104892 | ALUMINUM-NITRIDE-BASED COMPOSITE MATERIAL, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR A SEMICONDUCTOR MANUFACTURING APPARATUS - The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×10 | 04-29-2010 |
20100128409 | ALUMINUM NITRIDE SINTERED PRODUCT, METHOD FOR PRODUCING THE SAME, AND ELECTROSTATIC CHUCK INCLUDING THE SAME - A method for producing an aluminum nitride sintered product according to the present invention includes the steps of (a) preparing a powder mixture that contains AlN, 2 to 10 parts by weight of Eu | 05-27-2010 |
20100227145 | ALUMINUM OXIDE SINTERED BODY, METHOD FOR PRODUCING THE SAME AND MEMBER FOR SEMICONDUCTOR PRODUCING APPARATUS - An aluminum oxide sintered body of the invention includes: europium and nitrogen; and plate-like crystals having peaks coinciding with EuAl | 09-09-2010 |
20100248935 | ALUMINA SINTERED BODY, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER - A method for manufacturing an alumina sintered body of the present invention comprises: (a) forming a mixed powder containing at least Al | 09-30-2010 |
20110117360 | SINTERED CERAMIC BODY, MANUFACTURING METHOD THEREOF, AND CERAMIC STRUCTURE - A manufacturing method of a sintered ceramic body mixes barium silicate with aluminum oxide, a glass material, and an additive oxide to prepare a material mixture, molds the material mixture and fires the molded object. The barium silicate is monoclinic and has an average particle diameter in a range of 0.3 μm to 1 μm and a specific surface area in a range of 5 m | 05-19-2011 |
20120231243 | CERAMIC MATERIAL, LAMINATE, MEMBER FOR USE IN SEMICONDUCTOR MANUFACTURING EQUIPMENT, AND SPUTTERING TARGET MEMBER - A ceramic material mainly contains magnesium, aluminum, oxygen, and nitrogen, in which the ceramic material has a magnesium-aluminum oxynitride phase serving as a main phase, wherein XRD peaks of the magnesium-aluminum oxynitride phase measured with CuKα radiation appear at at least 2θ=47 to 50°. | 09-13-2012 |
20120231945 | CERAMIC MATERIAL, MEMBER FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT, SPUTTERING TARGET MEMBER AND METHOD FOR PRODUCING CERAMIC MATERIAL - A ceramic material according to the present invention mainly contains magnesium, aluminum, oxygen, and nitrogen, the ceramic material has the crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved in magnesium oxide, the crystal phase serving as a main phase. Preferably, XRD peaks corresponding to the (200) and (220) planes of the MgO—AlN solid solution measured with CuKα radiation appear at 2θ=42.9 to 44.8° and 62.3 to 65.2°, respectively, the XRD peaks being located between peaks of cubic magnesium oxide and peaks of cubic aluminum nitride. More preferably, the XRD peak corresponding to the (111) plane appears at 2θ=36.9 to 39°, the XRD peak being located between a peak of cubic magnesium oxide and a peak of cubic aluminum nitride. | 09-13-2012 |
20120250211 | MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS - An electrostatic chuck is provided with a ceramic substrate | 10-04-2012 |
20130022526 | CORROSION-RESISTANT MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - A mixed powder was prepared by weighing Yb | 01-24-2013 |
20130023401 | CORROSION-RESISTANT MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - Initially, an Yb | 01-24-2013 |
20130220988 | HEATING DEVICE - A heating apparatus includes a susceptor having a heating face of heating a semiconductor and a supporting part joined with a back face of the susceptor. The susceptor comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° by CuKα X-ray. | 08-29-2013 |
20130228565 | HEATING DEVICE - A heating apparatus | 09-05-2013 |
20130228566 | HEATING DEVICE - A heating apparatus | 09-05-2013 |
20130229746 | ELECTROSTATIC CHUCK - An electrostatic chuck | 09-05-2013 |
20130235507 | ELECTROSTATIC CHUCK - Electrostatic chucks ( | 09-12-2013 |
20140021662 | SINTERED CERAMIC BODY, MANUFACTURING METHOD THEREOF, AND CERAMIC STRUCTURE - A manufacturing method of a sintered ceramic body mixes barium silicate with aluminum oxide, a glass material, and an additive oxide to prepare a material mixture, molds the material mixture and fires the molded object. The barium silicate is monoclinic and has an average particle diameter in a range of 0.3 μm to 1 μm and a specific surface area in a range of 5 m | 01-23-2014 |
20140061553 | LANTHANUM BORIDE SINTERED BODY AND METHOD FOR PRODUCING THE SAME - A lanthanum boride sintered body | 03-06-2014 |
20140079946 | LAMINATED STRUCTURE, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR PRODUCING LAMINATED STRUCTURE - A laminated structure | 03-20-2014 |
20140272378 | DENSE COMPOSITE MATERIAL, METHOD FOR PRODUCING THE SAME, AND COMPONENT FOR SEMICONDUCTOR PRODUCTION EQUIPMENT - A dense composite material of the present invention contains 37% to 60% by mass of silicon carbide grains, also contains titanium silicide, titanium silicon carbide, and titanium carbide, each in an amount smaller than the mass percent of the silicon carbide grains, and has an open porosity of 1% or less. Such a dense composite material is, for example, characterized in that it has an average coefficient of linear thermal expansion at 40° C. to 570° C. of 7.2 to 8.2 ppm/K, a thermal conductivity of 75 W/mK or more, and a 4-point bending strength of 200 MPa or more. | 09-18-2014 |
20140287245 | DENSE COMPOSITE MATERIAL, METHOD FOR MANUFACTURING THE SAME, JOINED BODY, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUSES - A dense composite material according to the present invention contains, in descending order of content, silicon carbide, titanium silicon carbide, and titanium carbide as three major constituents. The dense composite material contains 51% to 68% by mass of silicon carbide and no titanium silicide and has an open porosity of 1% or less. This dense composite material has properties such as an average linear thermal expansion coefficient of 5.4 to 6.0 ppm/K at 40° C. to 570° C., a thermal conductivity of 100 W/m·K or more, and a four-point bending strength of 300 MPa or more. | 09-25-2014 |
20140290863 | CERAMIC MEMBER, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING CERAMIC MEMBER - A ceramic member | 10-02-2014 |
20150036261 | COOLING PLATE, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS | 02-05-2015 |
20150077895 | COOLING PLATE, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS | 03-19-2015 |