Patent application number | Description | Published |
20080223725 | Process chamber component having electroplated yttrium containing coating - A component capable of being exposed to a plasma in a process chamber has a structure having an electroplated coating comprising yttrium-containing species. The electroplated coating can include zirconium oxide, or can have an oxide layer thereon. In another embodiment the electroplated coating comprises a first species and is coated with a second electroplated coating comprising a second species that is different from the first species. The electroplated coating is resistant to corrosion in the plasma. In another embodiment, the electroplated coating has an interface having a thickness with a first concentration gradient of an yttrium-containing species and a second concentration gradient of a second species. An electroplated coating having a layer comprising first and second concentration gradients of first and second metals can be formed by varying the concentration of the first and second metal electrolyte species in the electroplating bath to electroplate the coating. | 09-18-2008 |
20080236618 | Cleaning of bonded silicon electrodes - Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member. | 10-02-2008 |
20080236620 | Methodology for cleaning of surface metal contamination from electrode assemblies - Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned. | 10-02-2008 |
20090311079 | ELECTRODE TRANSPORTER AND FIXTURE SETS INCORPORATING THE SAME - An electrode transporter is provided comprising a transporter frame, a plurality of transitional support elements, and a plurality of flipside support elements. The flipside support elements are configured to immobilize an electrode along a gravitational force vector normal to a major face of an electrode positioned in an electrode accommodating space defined by the transitional support elements and the flipside support elements. The transitional support elements are configured to transition back and forth from a secured state, where the electrode is further immobilized along an opposing force vector opposite the gravitational force vector, to an unsecured state where the electrode is relatively mobile along the opposing force vector. Additional embodiments relate to the use of a transporter tripod and an electrode removal puck and lifting fork to remove an electrode from the transporter frame. | 12-17-2009 |
20090321018 | PERIPHERALLY ENGAGING ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME - In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated. | 12-31-2009 |
20090322199 | BACKSIDE MOUNTED ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME - A carrier assembly is provided comprising a backside mounted electrode carrier and electrode mounting hardware. The backside mounted electrode carrier comprises an electrode accommodating aperture, which in turn comprises a sidewall structure that is configured to limit lateral movement of an electrode positioned in the aperture. The electrode accommodating aperture further comprises one or more sidewall projections that support the weight of an electrode positioned in the aperture. The electrode mounting hardware is configured to engage an electrode positioned in the electrode accommodating aperture from the backside of the carrier and urge the electrode against the sidewall projections so as to limit axial movement of the electrode in the electrode accommodating aperture. Additional embodiments of broader and narrower scope are contemplated. | 12-31-2009 |
20090325320 | PROCESSES FOR RECONDITIONING MULTI-COMPONENT ELECTRODES - A process for reconditioning a multi-component electrode comprising a silicon electrode bonded to an electrically conductive backing plate is provided. The process comprises: (i) removing metal ions from the multi-component electrode by soaking the multi-component electrode in a substantially alcohol-free DSP solution comprising sulfuric acid, hydrogen peroxide, and water and rinsing the multi-component electrode with de-ionized water; (ii) polishing one or more surfaces of the multi-component electrode following removal of metal ions there from; and (iii) removing contaminants from silicon surfaces of the multi-component electrode by treating the polished multi-component electrode with a mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water and by rinsing the treated multi-component electrode with de-ionized water. Additional embodiments of broader and narrower scope are contemplated. | 12-31-2009 |
20100045316 | METHOD FOR INSPECTING ELECTROSTATIC CHUCKS WITH KELVIN PROBE ANALYSIS - A method of inspecting an electrostatic chuck (ESC) is provided. The ESC has a dielectric support surface for a semiconductor wafer. The dielectric support surface is scanned with a Kelvin probe to obtain a surface potential map. The surface potential map is compared with a reference Kelvin probe surface potential map to determine if the ESC passes inspection. | 02-25-2010 |
20100139692 | IMMERSIVE OXIDATION AND ETCHING PROCESS FOR CLEANING SILICON ELECTRODES - A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both. Additional embodiments are contemplated, disclosed, and claimed. | 06-10-2010 |
20100144246 | PLATEN AND ADAPTER ASSEMBLIES FOR FACILITATING SILICON ELECTRODE POLISHING - A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen. The dual function electrode platen is secured to the polishing turntable and comprises a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts complement respective positions of mount receptacles formed in a platen engaging face of the silicon electrode to be polished. The electrode mounts and the mount receptacles are configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The dual function electrode platen further comprises platen adapter abutments positioned radially inward of the electrode mounts. The platen adapter abutments are configured to bring a platen adapter into approximate alignment with the rotary polishing axis. The silicon electrode is polished by (i) engaging the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode via the electrode mounts and mount receptacles, (ii) utilizing the polishing turntable to impart rotary motion to the engaged silicon electrode, and (iii) contacting an exposed face of the silicon electrode with a polishing surface as the silicon electrode rotates about the rotary polishing axis. Additional embodiments are contemplated, disclosed and claimed. | 06-10-2010 |
20100319813 | BARE ALUMINUM BAFFLES FOR RESIST STRIPPING CHAMBERS - Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer. | 12-23-2010 |
20110146704 | METHODOLOGY FOR CLEANING OF SURFACE METAL CONTAMINATION FROM AN UPPER ELECTRODE USED IN A PLASMA CHAMBER - A method for cleaning metallic contaminants from an upper electrode used in a plasma chamber. The method comprises a step of soaking the upper electrode in a cleaning solution of concentrated ammonium hydroxide, hydrogen peroxide and water. The cleaning solution is free of hydrofluoric acid and hydrochloric acid. The method further comprises an optional step of soaking the upper electrode in dilute nitric acid and rinsing the cleaned upper electrode. | 06-23-2011 |
20110146909 | METHODS FOR WET CLEANING QUARTZ SURFACES OF COMPONENTS FOR PLASMA PROCESSING CHAMBERS - Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times. | 06-23-2011 |
20110180117 | METHODS AND APPARATUS FOR WET CLEANING ELECTRODE ASSEMBLIES FOR PLASMA PROCESSING APPARATUSES - Methods of cleaning backing plates of electrode assemblies, or electrode assemblies including a backing plate and an electrode plate are provided. The methods can be used to clean backing plates and electrode plates made of various materials, such as silicon electrode plates and graphite and aluminum backing plates. The backing plates and electrode assemblies can be new, used or refurbished. A flushing fixture that can be used in the cleaning methods is also provided. | 07-28-2011 |
20110232678 | EXTENDING STORAGE TIME OF REMOVED PLASMA CHAMBER COMPONENTS PRIOR TO CLEANING THEREOF - A method of extending storage time prior to cleaning a component of a plasma chamber is provided. The method comprises removing the component from the chamber, covering a thermal spray coating on the component while the surface is exposed to atmospheric air, storing the component, optionally removing the covering, and optionally wet cleaning reaction by-products from the thermal spray coating. Alternatively, instead of, or in addition to covering a thermal spray coating on the component, the component can be placed into a desiccator or dry-box. | 09-29-2011 |
20110308732 | Electrode Carrier Assemblies - In accordance with one embodiment of the present disclosure, an electrode carrier assembly is provided including an electrode carrying annulus and a plurality of electrode mounting members. The electrode carrying annulus includes an electrode containment sidewall that forms an inner or outer radius of the electrode carrying annulus. The electrode carrying annulus further includes a plurality of radial sidewall projections that project radially away from the electrode containment sidewall. The radial sidewall projections each include an upward-facing tapered spacer including an upward-facing micro-mesa. The electrode mounting members each include a downward-facing tapered spacer including a downward-facing micro-mesa. The electrode mounting members are rotatably engaged with the electrode carrying annulus, and are configured to rotate between a free position and a bracketed position. | 12-22-2011 |
20120013242 | BACKSIDE MOUNTED ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME - A carrier assembly is provided comprising a backside mounted electrode carrier and electrode mounting hardware. The backside mounted electrode carrier comprises an electrode accommodating aperture, which in turn comprises a sidewall structure that is configured to limit lateral movement of an electrode positioned in the aperture. The electrode accommodating aperture further comprises one or more sidewall projections that support the weight of an electrode positioned in the aperture. The electrode mounting hardware is configured to engage an electrode positioned in the electrode accommodating aperture from the backside of the carrier and urge the electrode against the sidewall projections so as to limit axial movement of the electrode in the electrode accommodating aperture. Additional embodiments of broader and narrower scope are contemplated. | 01-19-2012 |
20120108152 | Electrode Securing Platens And Electrode Polishing Assemblies Incorporating The Same - In one embodiment, an electrode polishing assembly may include an electrode securing platen, a plurality of electrode locating fasteners, and an electrode. Each of the electrode locating fasteners may include an electrode spacing shoulder, a variance cancelling shoulder extending from the electrode spacing shoulder, a threaded platen clamping portion extending from the variance cancelling shoulder, and a threaded nut that engages the threaded platen clamping portion. The electrode locating fasteners clamp the electrode securing platen between the threaded nut and the electrode spacing shoulder. The variance cancelling shoulder is at least partially within one of a plurality of variance cancelling passages of the electrode securing platen. A minimum position stack-up is equal to a minimum passage size minus a maximum shoulder size. A maximum position stack-up is equal to a maximum passage size minus a minimum shoulder size. The maximum position stack-up is greater than the minimum position stack-up. | 05-03-2012 |
20120135155 | PROCESS CHAMBER COMPONENT HAVING YTTRIUM-ALUMINUM COATING - A substrate processing chamber component comprising a chamber component structure having an yttrium-aluminum coating. The yttrium-aluminum coating comprises a compositional gradient through a thickness of the coating. | 05-31-2012 |
20120138472 | METHOD OF FORMING A PROCESS CHAMBER COMPONENT HAVING ELECTROPLATED YTTRIUM CONTAINING COATING - Methods of fabricating a chamber component capable of being exposed to a plasma in a process chamber includes: providing a component structure composed of metal; immersing the surface of the component structure in an electroplating bath comprising first metal electrolyte species and second metal electrolyte species; forming a cathode by connecting the component structure to a negative terminal of a voltage source; immersing in the electroplating bath, an anode comprising an inert material or material to be electroplated, and connecting the anode to a positive terminal of the voltage source; and electroplating a layer having a concentration gradient of the first metal, second metal, or both. | 06-07-2012 |
20120144640 | EXTENDING LIFETIME OF YTTRIUM OXIDE AS A PLASMA CHAMBER MATERIAL - A method of installing a component of a plasma processing chamber by replacing a used component with a component made by forming a dual-layer green body and co-sintering the dual-layer green body so as to form a three-layer component. The three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. The component is installed such that the outer layer of yttria is exposed to the plasma environment when the chamber is in operation. | 06-14-2012 |
20130019907 | Dual Phase Cleaning Chambers and Assemblies Comprising The Same - In one embodiment, a dual phase cleaning chamber may include a turbulent mixing chamber, a fluid diffuser, an isostatic pressure chamber and a rupture mitigating nozzle. The turbulent mixing chamber may be in fluid communication with a first fluid inlet and a second fluid inlet. The fluid diffuser may be in fluid communication with the turbulent mixing chamber. The rupture mitigating nozzle may include a first fluid collecting offset, a second fluid collecting offset, and a displacement damping projection. The displacement damping projection may be disposed between the first and second fluid collecting offset and may be offset away from each of the first fluid collecting offset and the second fluid collecting offset, and towards the fluid diffuser. A pressurized cleaning fluid introduced from the first fluid inlet, the second fluid inlet, or both flows through the outlet passage of the first and second fluid collecting offset. | 01-24-2013 |
20130056022 | BARE ALUMINUM BAFFLES FOR RESIST STRIPPING CHAMBERS - Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer. | 03-07-2013 |
20130100278 | AUTOMATED BUBBLE DETECTION APPARATUS AND METHOD - An automated hydrogen bubble detection apparatus includes a horizontal support surface on which a test coupon can be supported, a transparent tube having an open top and an open bottom and operable to contain a test solution when positioned on a test coupon, a camera arranged to view a test solution in the transparent tube, and a controller in communication with the camera and effective to operate the camera such that at least one video segment is recorded by the camera and analyzed to detect first bubble and continuous bubble generation. A method of evaluating corrosion resistance of coatings on aluminum and steel in acidic solution is also included. | 04-25-2013 |
20130102156 | COMPONENTS OF PLASMA PROCESSING CHAMBERS HAVING TEXTURED PLASMA RESISTANT COATINGS - A component of a plasma processing chamber includes a three dimensional body having a highly dense plasma resistant coating thereon wherein a plasma exposed surface of the coating has a texture which inhibits particle generation from film buildup on the plasma exposed surface. The component can be a window of an inductively coupled plasma reactor wherein the window includes a textured yttria coating. The texture can be provided by contacting the plasma exposed surface with a polishing pad having a grit size effective to provide intersecting scratches with a depth of 1 to 2 microns. | 04-25-2013 |
20130104938 | Methods For Mixed Acid Cleaning Of Showerhead Electrodes | 05-02-2013 |
20130104942 | Mixed Acid Cleaning Assemblies | 05-02-2013 |
20130105083 | Systems Comprising Silicon Coated Gas Supply Conduits And Methods For Applying Coatings | 05-02-2013 |
20130263897 | Dielectric Window Cleaning Apparatuses - A dielectric window cleaning apparatus may be used for cleaning a dielectric window of a plasma processing device. The dielectric window cleaning apparatus may comprise a window support base, a fluid containing enclosure, a window rotating mechanism, a spray arm, and multiple fluid spraying nozzles. The fluid containing enclosure may include at least one overflow containment sidewall and may be located at least partially under and at least partially around a portion of the window support base. The window rotating mechanism may be operatively connected to the window support base and may rotate the window support base. The spray arm may be in fluid communication with a fluid source and may include a fluid flow channel. The multiple fluid spraying nozzles may each expel fluid from the fluid flow channel in a window cleansing spray. | 10-10-2013 |
20140030966 | PLATEN AND ADAPTER ASSEMBLIES FOR FACILITATING SILICON ELECTRODE POLISHING - A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen secured to the polishing, which can comprise a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts and mount receptacles can be configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The silicon electrode can be polished by (i) engaging the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode via the electrode mounts and mount receptacles, (ii) utilizing the polishing turntable to impart rotary, and (iii) contacting an exposed face of the silicon electrode with a polishing surface as the silicon electrode. Additional embodiments are contemplated, disclosed and claimed. | 01-30-2014 |
20140083461 | METHOD OF REMOVING DAMAGED EPOXY FROM ELECTROSTATIC CHUCK - A method of removing an epoxy band from an electrostatic chuck includes securing the electrostatic chuck in a servicing fixture, applying a thermal source to the epoxy band to breakdown a plurality of adhesive bonds securing the epoxy band to the electrostatic chuck, forming a hole in the epoxy band and pulling the epoxy band from the electrostatic chuck. A system for removing an epoxy band from an electrostatic chuck is also described. | 03-27-2014 |
20140113453 | TUNGSTEN CARBIDE COATED METAL COMPONENT OF A PLASMA REACTOR CHAMBER AND METHOD OF COATING - A tungsten carbide coated chamber component of semiconductor processing equipment includes a metal surface, optional intermediate nickel coating, and outer tungsten carbide coating. The component is manufactured by optionally depositing a nickel coating on a metal surface of the component and depositing a tungsten carbide coating on the metal surface or nickel coating to form an outermost surface. | 04-24-2014 |
20140127911 | PALLADIUM PLATED ALUMINUM COMPONENT OF A PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF - A palladium plated aluminum component of a semiconductor plasma processing chamber comprises a substrate including at least an aluminum or aluminum alloy surface, and a palladium plating on the aluminum or aluminum alloy surface of the substrate. The palladium plating comprises an exposed surface of the component and/or a mating surface of the component. | 05-08-2014 |
20140148013 | ACTIVELY HEATED ALUMINUM BAFFLE COMPONENT HAVING IMPROVED PARTICLE PERFORMANCE AND METHODS OF USE AND MANUFACTURE THEREOF - An actively heated aluminum baffle component such as a thermal control plate or baffle ring of a showerhead electrode assembly of a plasma processing chamber has an exposed outer aluminum oxide layer which is formed by an electropolishing procedure. The exposed outer aluminum oxide layer minimizes defects and particles generated as a result of differential thermal stresses experienced by the aluminum component and outer aluminum oxide layer during plasma processing compared to an identically shaped component having a Type III anodized surface. | 05-29-2014 |
20140150819 | METHOD OF WET CLEANING ALUMINUM CHAMBER PARTS - A method of wet cleaning an aluminum part having bare aluminum surfaces and anodized aluminum surfaces. The method includes CO | 06-05-2014 |
20140261575 | PORTABLE SONIC PARTICLE REMOVAL TOOL WITH A CHEMICALLY CONTROLLED WORKING FLUID - A particle removal tool having a sound field transducer, a cleaning chamber, and an open sealing face. The cleaning chamber having a cleaning fluid guiding chamber extending from the sound field transducer to the open sealing face, a cleaning fluid delivery channel in fluid communication with the cleaning fluid guiding chamber, and a cleaning fluid return channel. The open sealing face has a cleaning portal disposed contiguous with a plane formed by the open sealing face and a chamber-to-surface interface seal which forms a fluid tight seal with a cleaning surface plane. The sound field transducer is disposed within a line-of-sight of the cleaning portal and generates acoustic waves with a frequency between approximately 20 kHz and approximately 2 MHz. | 09-18-2014 |
20140272459 | CORROSION RESISTANT ALUMINUM COATING ON PLASMA CHAMBER COMPONENTS - Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed. | 09-18-2014 |
20140295670 | DENSE OXIDE COATED COMPONENT OF A PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF - A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component. | 10-02-2014 |
20140315392 | COLD SPRAY BARRIER COATED COMPONENT OF A PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF - A cold spray barrier coated component of a semiconductor plasma processing chamber comprises a substrate having at least one metal surface wherein a portion of the metal surface is configured to form an electrical contact. A cold spray barrier coating is formed from a thermally and electrically conductive material on at least the metal surface configured to form the electrical contact of the substrate. Further, the cold spray barrier coating may also be located on a plasma exposed and/or process gas exposed surface of the component. | 10-23-2014 |