Patent application number | Description | Published |
20100195389 | FLASH MEMORY DEVICE AND METHODS PROGRAMMING/READING FLASH MEMORY DEVICE - Multilevel flash memory and methods of programming/reading flash memory are disclosed. The multilevel flash memory device comprises a status detector configured to detect whether or not a target memory cell is programmed to an erase state, and a control logic unit controlling a program voltage applied to a neighboring memory cell adjacent to the target memory cell and to be programmed to one of a plurality of standard program states, such that the neighboring memory cell is programmed to a corresponding one of a plurality of correction program states different from the one of the plurality of standard program states. | 08-05-2010 |
20100223530 | SEMICONDUCTOR MEMORY DEVICE AND DATA PROCESSING METHOD THEREOF - Provided are a semiconductor memory device and a data processing method thereof. The semiconductor memory device includes a nonvolatile memory and a memory controller. The nonvolatile memory stores data a plurality of memory cells. The memory controller rearranges data by various operations such as a modulation code operation and processes the data according to an ECC operation to reduce the interference between the memory cells. | 09-02-2010 |
20100251077 | STORAGE DEVICE AND DATA STORAGE SYSTEM INCLUDING OF THE SAME - A storage device includes a controller unit and a memory cell array. The controller unit is for outputting data through a first data path or a second data path according to a property of externally supplied input data. The memory cell array includes a first memory and a second memory, and receives and stores the data from the controller unit output through the first and second data paths. The first memory has a different memory cell structure than the second memory. | 09-30-2010 |
20100296350 | METHOD OF SETTING READ VOLTAGE MINIMIZING READ DATA ERRORS - A method setting a read voltage to minimize data read errors in a semiconductor memory device including multi-bit memory cells. In the method, a read voltage associated with a minimal number of read data error is set based on a statistic value of a voltage distribution corresponding to each one of a plurality of voltage states. | 11-25-2010 |
20100302850 | Storage device and method for reading the same - The storage device includes a storage unit configured to store data, an error controlling unit configured to correct an error of the data read out from the storage unit according to at least one read level, and a read level controlling unit configured to control the at least one read level when the error is uncorrectable. The read level controlling unit is configured to measure a distribution of memory cells of the storage unit, configured to filter the measured distribution, and configured to reset the at least one read level based on the filtered distribution. | 12-02-2010 |
20110032758 | NONVOLATILE MEMORY DEVICE OUTPUTTING ANALOG SIGNAL AND MEMORY SYSTEM HAVING THE SAME - A memory system and a nonvolatile memory device therein are disclosed. The memory system comprises a memory device outputting a plurality of analog signals during a read operation, a converter to convert the plurality of analog signals into binary data, and a memory controller to operate an error correction operation on the binary data. The error correction operation uses a soft decision algorithm. | 02-10-2011 |
20110093765 | FLASH MEMORY DEVICE AND RELATED PROGRAMMING METHOD - A nonvolatile memory device comprises a memory cell array configured to store one or more bits per memory cell, a read and write circuit configured to access the memory cell array, a control logic component configured to control the read and write circuit to sequentially execute read operations of a selected memory cell at least twice to output a read data symbol, and an error correcting unit configured to correct an error in the read data symbol based on a pattern of the read data symbol to output an error-corrected symbol. | 04-21-2011 |
20110185267 | ENCODING DEVICE, CONTROLLER AND SYSTEM INCLUDING THE SAME - An encoding device includes an encoder and a puncturing unit. The encoder generates parity bits based on information bits. The puncturing unit punctures the parity bits based on a puncturing pattern complying with a first criterion determining a period of the puncturing pattern and a second criterion determining positions of remaining parity bits. | 07-28-2011 |
20110208897 | METHOD AND MEMORY SYSTEM USING A PRIORI PROBABILITY INFORMATION TO READ STORED DATA - A memory system comprises a non-volatile memory device that stores user data and state information regarding the user data. In a read operation of the non-volatile memory device, a memory controller calculates a priori probabilities for the user data based on the state information, calculates a posteriori probabilities based on the a priori probabilities, and performs a soft-decision operation to determine values of the user data based on the a posteriori probabilities. | 08-25-2011 |
20110216588 | MULTI-BIT CELL MEMORY DEVICES USING ERROR CORRECTION CODING AND METHODS OF OPERATING THE SAME - A memory device includes a plurality of multi-bit memory cells. A plurality of input data bits are encoded according to an error correction code to generate a codeword including a plurality of groups of bits. Respective ones of the plurality of multi-bit memory cells are programmed to represent respective ones of the groups of bits of the codeword. The groups of bits of the codeword may be groups of consecutive bits. In some embodiments, the multi-bit memory cells are each configured to store in bits and a length of the codeword is an integer multiple of m. Data may be read from the multi-bit memory cells in page units or cell units to recover the codeword, and the recovered code word may be decode according to the error correction code to recover the input data bits. | 09-08-2011 |
20110216589 | FLASH MEMORY DEVICE, MEMORY SYSTEM AND METHOD OF OPERATING THE SAME - A memory system includes a memory device and a data converting device. The memory device includes a memory cell array which includes a plurality of memory cells. The data converting device includes an encoding device. The encoding device converts input data into converted data by changing a bandwidth corresponding to the input data, and provides the converted data to the memory device. Accordingly, the memory system is capable of improving the reliability of programmed data by changing the bandwidth corresponding to data to be programmed. A method of storing data in a memory system is also disclosed. | 09-08-2011 |
20110219288 | METHOD OF OPERATING NONVOLATILE MEMORY DEVICE, METHOD OF OPERATING CONTROLLER, AND METHOD OF OPERATING MEMORY SYSTEM INCLUDING THE SAME - An method of operating a memory system including a nonvolatile memory device and a controller. The method includes receiving a source word, converting the received source word to a codeword, and programming the converted codeword in the nonvolatile memory device. A length of the converted codeword can be greater than a length of the received source word, and a difference between the numbers of first and second digital bits of the converted codeword can be less than a reference value. | 09-08-2011 |
20110249496 | PROGRAM METHOD OF MULTI-BIT MEMORY DEVICE AND DATA STORAGE SYSTEM USING THE SAME - Provided is a program method of a multi-bit memory device with memory cells arranged in rows and columns. The program method includes a programming each memory cell of the first group of memory cells to a state within a first group of states according to a verify voltage level of a first group of verify voltage levels within a first range of levels, and programming each memory cell of the second group of memory cells to a state within a second group of states according to a verify voltage level of a second group of verify voltage levels within a second range of levels. The lowest verify voltage level in the second range of levels is higher than the highest verify voltage level in the first range of levels. A first voltage difference between adjacent verify voltage levels within the first range of levels is different from a second voltage difference between the highest verify voltage level of the second group of verify voltage levels and the lowest verify voltage level of the third group of verify voltage levels. | 10-13-2011 |
20110252183 | METHODS OF STORING DATA IN STORAGE MEDIA, DATA STORAGE DEVICES USING THE SAME, AND SYSTEMS INCLUDING THE SAME - A method of storing data in a storage media can include determining whether a size of data to be stored in the storage media satisfies a reference condition and compressing the data to provide compressed data for storage in the storage media upon determining that the size satisfies a reference condition. | 10-13-2011 |
20110276777 | DATA STORAGE DEVICE AND RELATED METHOD OF OPERATION - A method of storing data in a storage medium of a data storage device comprises storing input data in the storage medium, and reading the input data from the storage medium and compressing the read data during a background operation of the data storage device. | 11-10-2011 |
20110276857 | DATA STORAGE DEVICE AND PROGRAM METHOD THEREOF - A data storage device includes a non-volatile memory device including a plurality of memory cells and a memory controller. The memory controller is configured to modify an arrangement of program data and to program the modified program data into the plurality of memory cells. The memory controller modifies the program data to eliminate a given data pattern causing physical interference between adjacent memory cells from the modified program data. | 11-10-2011 |
20110283166 | STORAGE DEVICE HAVING A NON-VOLATILE MEMORY DEVICE AND COPY-BACK METHOD THEREOF - A storage device includes a non-volatile memory device outputting read data from a source area and a memory controller configured to execute an ECC operation on a plurality of vectors in the read data and to write the error-corrected read data into target area of the non-volatile memory device. The memory controller declares that a vector corresponding to a clean area is decoding pass without using a flag bit among the plurality of vectors during the error correction operation. | 11-17-2011 |
20110289278 | METHOD OF ESTIMATING READ LEVEL FOR A MEMORY DEVICE, MEMORY CONTROLLER THEREFOR, AND RECORDING MEDIUM - A method of estimating a read level for a memory device includes calculating first information corresponding to at least one among information about the number of cells having a particular logic level in data to be programmed and information about the number of cells having a particular cell state and storing the first information during a program operation; reading the data based on a threshold level that has been set and calculating second information about the number of cells in at least one state defined by the threshold level with respect to the read data; calculating third information about the number of cells in the at least one state, which corresponds to the second information, using a probability based on the first information; comparing the second information with the third information; and determining whether to change the threshold level according to the comparison result. | 11-24-2011 |
20110289384 | MEMORY SYSTEM WITH PAGE-BASED ITERATIVE DECODING STRUCTURE AND PAGE-BASED ITERATIVE DECODING METHOD THEREOF - A method of iteratively decoding data transferred through a channel is provided. The method may include iteratively decoding each sector of 1 to N sectors of the data in continuous succession until all N sectors are decoded, wherein upon determination of successful completion of iterative decoding corresponding to a current sector of the N sectors, immediately initiating iterative decoding a next sector of the N sectors. | 11-24-2011 |
20110320689 | Data Storage Devices and Data Management Methods for Processing Mapping Tables - Methods of operating integrated circuit devices include updating a mapping table with physical address information by reading forward link information from a plurality of spare sectors in a corresponding plurality of pages within a nonvolatile memory device and then writing mapping table information derived from the forward link information into the mapping table. This forward link information may be configured as absolute address information (e.g., next physical address) and/or relative address information (e.g., change in physical address). This updating of the mapping table may include updating a mapping table within a volatile memory, in response to a resumption of power within the integrated circuit device. This resumption of power may follow a power failure during which the contents of the volatile memory are lost. | 12-29-2011 |
20120020156 | METHOD FOR PROGRAMMING NON-VOLATILE MEMORY DEVICE AND APPARATUSES PERFORMING THE METHOD - A method of programming multi-level cells included in a spare region, the method including programming first page data and at least one first dummy data in a first multi-level cell; and programming second page data and at least one second dummy data in a second multi-level cell. | 01-26-2012 |
20120069657 | MEMORY DEVICE AND SELF INTERLEAVING METHOD THEREOF - A memory device includes a memory cell array, a self interleaver configured to interleave and load data on the fly into a buffer circuit using an interleaving scheme, and a control logic configured to control programming of the interleaved data in the memory cell array. | 03-22-2012 |
20120069664 | FLASH MEMORY SYSTEM AND WORD LINE INTERLEAVING METHOD THEREOF - Provided are a flash memory system and a word line interleaving method thereof. The flash memory system includes a memory cell array, and a word line interleaving logic. The memory cell array is connected to a plurality of word lines. The word line (WL) interleaving logic performs an interleaving operation on WL data corresponding to at least two different wordlines and programming data, including the interleaved data, to the memory cell array. | 03-22-2012 |
20120084490 | METHOD FOR CHANGING READ PARAMETER FOR IMPROVING READ PERFORMANCE AND APPARATUSES USING THE SAME - A memory system including a non-volatile memory device and a memory controller is provided. When a read operation on a first data initially output from the non-volatile memory device during a first read operation is successful, the memory controller may change a read voltage for reading a second data stored in the non-volatile memory device during a second read operation. | 04-05-2012 |
20120144148 | METHOD AND DEVICE OF JUDGING COMPRESSED DATA AND DATA STORAGE DEVICE INCLUDING THE SAME - A write method of a data storage device including a storage media includes receiving data to be stored in the storage media; judging whether the received data is compressed data, without externally provided additional information; and selectively compressing the received data according to the judgment result, wherein the judging whether the received data is compressed data is made based on a distribution of actual symbols included in at least part of the received data. | 06-07-2012 |
20120166708 | FLASH MEMORY DEVICES, DATA RANDOMIZING METHODS OF THE SAME, MEMORY SYSTEMS INCLUDING THE SAME - Disclosed is a flash memory device which includes a memory cell array configured to store data, a randomizer configured to generate a random sequence, to interleave the random sequence using at least one of memory parameters associated with data to be programmed in the memory cell array, and a control logic circuit configured to provide the memory parameters to the randomizer and to control the randomizer. | 06-28-2012 |
20120221772 | SEMICONDUCTOR MEMORY DEVICES, SYSTEMS INCLUDING NON-VOLATILE MEMORY READ THRESHOLD VOLTAGE DETERMINATION - A semiconductor memory system can include a memory device having a memory cell array that includes a plurality of memory cells. A memory controller can be configured to perform domain transformation on data written to and/or read from the plurality of memory cells to provide domain-transformed data and configured to perform signal processing on the domain-transformed data to output processed data or a control signal. | 08-30-2012 |
20120221775 | NON-VOLATILE MEMORY DEVICE AND READ METHOD THEREOF - An apparatus and a method for reading from a non-volatile memory whereby soft decision data is used to determine the reliability of hard decision data. The hard decision data read from the non-volatile memory is de-randomized and the soft decision data read from the non-volatile memory is not de-randomized. Using the soft decision data, the hard decision data is decoded. | 08-30-2012 |
20120233518 | Data Processing Systems And Methods Providing Error Correction - A method may be provided to detect and correct data errors in a data system where a data message has been encoded with outer parity bits based on the data message using an outer encoding technique to provide an outer codeword and with inner parity bits based on the outer codeword using an inner encoding technique different than the outer encoding technique to provide an inner codeword. The method may include using the inner parity bits and an inner decoding technique corresponding to the inner encoding technique to perform inner decoding of the inner codeword. Responsive to performing inner decoding of the inner codeword without error, the data message may be extracted from a result of inner decoding the inner codeword without using the outer parity bits to decode the result of inner decoding the inner codeword. Related systems are also discussed. | 09-13-2012 |
20120242517 | METHODS OF COMPRESSING DATA IN STORAGE DEVICE - At least one example embodiment discloses a method of compressing data in a storage device. The method includes determining a codeword length of a symbol using a first table indicating a relationship between a number of occurrences of the symbol in received data and the codeword length, determining a codeword having the codeword length for the symbol, and generating compressed data of the received data, the generating including converting the symbol into the codeword. | 09-27-2012 |
20120246395 | MEMORY SYSTEM WITH INTERLEAVED ADDRESSING METHOD - Disclosed is a memory system which includes a nonvolatile memory device including a memory cell array having a plurality of word lines including a first set of word lines storing first data having a high bit error rate, and a second set of word lines storing second data having low bit error rate less than the high bit error rate, and a memory controller that during a program operation maps logical addresses for a portion of the first data and a portion of the second data onto a selected word line selected from the plurality of word lines. | 09-27-2012 |
20120257455 | NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING NONVOLATILE MEMORY DEVICES - Methods of operating nonvolatile memory devices including a plurality of cell strings each having at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor, the operating methods including receiving a command and an address, determining a voltage applying time in response to the input command and address, and applying a specific voltage to memory cells of cell strings corresponding to the input address during the determined voltage applying time. | 10-11-2012 |
20120268988 | NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL ARRAY WITH UPPER AND LOWER WORD LINE GROUPS - A nonvolatile memory device includes a memory cell array having multiple memory blocks. Each memory block includes memory cells arranged at intersections of multiple word lines and multiple bit lines. At least one word line of the multiple word lines is included in an upper word line group and at least one other word line of the multiple word lines is included in a lower word line group. The number of data bits stored in memory cells connected to the at least one word line included in the upper word line group is different from the number of data bits stored in memory cells connected to the at least one other word line included in the lower word line group. | 10-25-2012 |
20130007081 | DEVICE AND METHOD FOR PROCESSING DATA - A data processing which includes a conversion circuit and a pseudo random number generator including a series connection of plural shift registers. The conversion circuit receives a pseudo random number sequence from an output of one of the plural shift registers excluding a last shift register of the series connection, and converts first data to second data using the received pseudo random number sequence. | 01-03-2013 |
20130103913 | SEMICONDUCTOR STORAGE DEVICE, SYSTEM, AND METHOD - A semiconductor storage system includes: a difference determining circuit configured to determine a difference between the number of first state values of sample data written to a memory and the number of first state values of read data read from the memory; and a compensation value determining circuit configured to determine a read voltage level compensation value corresponding to a difference between the number of the first state values of the sample data written to the memory and the number of the first state values of the read data read from the memory. | 04-25-2013 |
20130132644 | METHOD OF PROGRAMMING A NONVOLATILE MEMORY DEVICE - A method of programming a nonvolatile memory device including a page buffer is provided. The method includes loading first page data and second page data into the page buffer; performing, by the page buffer, a first selective dump operation on the first page data and the second page data to generate first interleaved page data; performing, by the page buffer, a second selective dump operation on the first page data and the second page data to generate second interleaved page data; and programming the first interleaved page data and the second interleaved page data into a multi-level cell block. | 05-23-2013 |
20130173983 | GENERATION OF PROGRAM DATA FOR NONVOLATILE MEMORY - A method generating program data to be stored in a nonvolatile memory device comprises randomizing the program data, and processing the randomized program data to reduce a frequency of at least one data state among the randomized program data. | 07-04-2013 |
20130173989 | MEMORY SYSTEM CONTROLLER HAVING SEED CONTROLLER USING MULTIPLE PARAMETERS - In a memory system, a memory controller includes a randomizer and a seed controller. The seed controller provides a seed to the randomizer and includes; a first register block performing a first cyclic shift operation using a first parameter related to the nonvolatile memory device, a second register block performing a second cyclic shift operation using a second parameter related to the nonvolatile memory device, and a seed generating block generating the seed from the first and second cyclic shift results. | 07-04-2013 |
20130179659 | DATA STORAGE DEVICE WITH SELECTIVE DATA COMPRESSION - A memory controller comprises a host interface block comprising a compression ratio calculator configured to determine whether a compression ratio of input data exceeds a predetermined compression ratio, and a compression block configured to compress the input data as a consequence of the host compression ratio calculator determining that the compression ratio exceeds the predetermined compression ratio. | 07-11-2013 |
20130198589 | METHOD OF OPERATING MEMORY CONTROLLER AND MEMORY SYSTEM INCLUDING THE MEMORY CONTROLLER - According to example embodiments, a method of controlling a memory controller includes executing an error correction code (ECC) on first page data that has been read from a non-volatile memory device using a first read voltage level, estimating a second read voltage level for reading the first page data using metadata of second page data when an uncorrectable error is detected in the first page data according to a result of executing the ECC. | 08-01-2013 |
20130227213 | MEMORY CONTROLLER AND OPERATION METHOD THEREOF - A memory controller and an operation method thereof are provided. The operation method includes storing a plurality of random sequences, selecting at least one random sequence among the plurality of random sequences according to a data pattern of a data block, and performing conversion by at least one of randomizing the data block using the selected at least one random sequence and derandomizing the randomized data block using the selected at least one random sequence. | 08-29-2013 |
20130268724 | SSD WITH RAID CONTROLLER AND PROGRAMMING METHOD - A solid state drive (SSD) includes non-volatile memory devices and a RAID controller. Each of the non-volatile memory devices includes a memory cell array having a plurality of physical pages. The RAID controller performs a parity operation on 1st through (N−1)th physical page data to generate Nth physical page data, determines a physical page group including 1st through Nth physical pages that are selected from the 1st through Nth non-volatile memory devices, respectively, such that at least two of the 1st through Nth physical pages have different bit error rates from each other, and stores the 1st through Nth physical page data in the 1st through Nth physical pages, respectively. | 10-10-2013 |
20130326296 | NONVOLATILE MEMORY DEVICE AND ERROR CORRECTION METHODS THEREOF - A data processing method is provided for processing data read from a nonvolatile memory. The data processing method includes receiving first bit data from the nonvolatile memory at a memory controller, and performing erasure decoding based on the first bit data and second bit data stored in the memory controller. The first bit data indicates a memory cell that is erasure, and the second bit data is read using a read voltage during previous error correction decoding. | 12-05-2013 |
20130326314 | NONVOLATILE MEMORY DEVICE AND RELATED READ METHOD USING HARD AND SOFT DECISION DECODING - A storage device comprises a nonvolatile memory device comprising a plurality of memory cells, and an error correction circuit configured to receive primary data and secondary data from the nonvolatile memory device and to perform a hard decision decoding operation on the primary data and further configured to perform a soft decision decoding operation on the primary data based on the secondary data. The primary data is read from the plurality of memory cells in a hard decision read operation and the secondary data is read from memory cells programmed to a specific state from among the primary data. | 12-05-2013 |
20140037086 | MEMORY SYSTEM GENERATING RANDOM NUMBER AND METHOD GENERATING RANDOM NUMBER - In a memory of non-volatile memory cells, a random number is generated by programming non-volatile memory cells, reading the programmed non-volatile memory cells using a random number read voltage selected in accordance with a characteristic of the non-volatile memory cells to generate random read data, and generating the random number from the random read data. | 02-06-2014 |
20140047246 | FLASH MEMORY DEVICE INCLUDING KEY CONTROL LOGIC AND ENCRYPTION KEY STORING METHOD - A flash memory device is provided which includes a plurality of memory cells connected with a word line and including a key cell to store an encryption key; a data input/output circuit configured to receive the encryption key; and key control logic configured to control a program operation on the key cell and to use a column address of the key cell as the encryption key. | 02-13-2014 |
20140108747 | METHOD OF DETERMINING DETERIORATION STATE OF MEMORY DEVICE AND MEMORY SYSTEM USING THE SAME - A method is provided for determining a deterioration condition of a memory device. The method includes calculating first information corresponding to a number of bits having a first logic value from data obtained by performing a first read operation on target storage region of the memory device using a first reference voltage as a read voltage, and calculating second information corresponding to a number of bits having a second logic value from data obtained by performing a second read operation on the target storage region using a second reference voltage as the read voltage. A deterioration condition of the target storage region is determined based on the first and second information. The first reference voltage is less than a first read voltage by which an erase state of the memory device is distinguished from an adjacent program state, and the second reference voltage is higher than the first read voltage. | 04-17-2014 |
20140115237 | ENCODING PROGRAM DATA BASED ON DATA STORED IN MEMORY CELLS TO BE PROGRAMMED - A method of programming data in a nonvolatile memory device comprises receiving program data to be programmed in selected memory cells of the nonvolatile memory device, reading data from the selected memory cells, encoding the program data using at least one encoding scheme selected from among multiple encoding schemes according to a comparison of the program data and the read data, generating flag data including encoding information, and programming the encoded program data and the flag data in the selected memory cells. | 04-24-2014 |
20140115424 | MEMORY SYSTEM AND METHOD OF OPERATING MEMORY SYSTEM USING RECONSTRUCTED DATA - Provided is a method of operating a memory system. The method includes programming first bit data into multiple memory cells; identifying target memory cells that are in a first state and have threshold voltages equal to or greater than a first voltage from the memory cells programmed with the first bit data; receiving second bit data which is to be programmed into the memory cells; calculating multiple third bit data by performing a first process on the second bit data; and selecting third bit data of the calculated multiple third bit data that changes a largest number of target memory cells from the first state to a second state when the memory cells are programmed with each of the multiple third bit data, respectively. The selected third bit data is programmed into the memory cells. | 04-24-2014 |
20140119124 | SEMICONDUCTOR MEMORY SYSTEMS USING REGRESSION ANALYSIS AND READ METHODS THEREOF - A memory system includes: a bit counter and a regression analyzer. The bit counter is configured to generate a plurality of count values based on data read from selected memory cells using a plurality of different read voltages, each of the plurality of count values being indicative of a number of memory cells of a memory device having threshold voltages between pairs of the plurality of different read voltages. The regression analyzer is configured to determine read voltage for the selected memory cells based on the plurality of count values using regression analysis. | 05-01-2014 |
20140136765 | MEMORY SYSTEM COMPRISING NONVOLATILE MEMORY DEVICE AND RELATED READ METHOD - A method of operating a nonvolatile memory device configured to erase a memory block in sub-block units comprises detecting state information of unselected sub-blocks associated with a selected sub-block comprising selected memory cells, adjusting a read bias of the selected memory cells based on the state information, and reading data from the selected memory cells according to the adjusted read bias. The state information indicates a number of the unselected sub-blocks having a programmed state or an erased state. | 05-15-2014 |
20140136920 | MEMORY CONTROLLER CHANGING PARTIAL DATA IN MEMORY DEVICE AND METHOD FOR CHANGING PARTIAL DATA THEREOF - A partial data changing method of a memory controller includes receiving a request to change partial data from a host; detecting an error of old data, the old data being partial data read from a memory device using an error detection code; if the old data is not erroneous, calculating a data difference between new data provided from the host and the old data, and calculating a new parity using the data difference and an old parity read from the memory device; and storing the new data and the new parity at the memory device. | 05-15-2014 |
20140185361 | NON-VOLATILE RANDOM ACCESS MEMORY DEVICE AND DATA READ METHOD THEREOF - A nonvolatile random access memory device includes a plurality of memory cells configured to store data therein, a plurality of reference cells separate from the memory cells, the reference cells each configured to output a corresponding reference cell signal, and a read/write circuit. The read/write circuit is configured to generate from the reference cell signals a reference signal which is variable to have a plurality of different reference levels. The read/write circuit is further configured to identify, in response to the reference signal, a logic state among a first logic state and a second logic state for each of one or more selected memory cells, and to output read data corresponding to the identified logic state. | 07-03-2014 |
20140195702 | METHOD OF OPERATING DATA COMPRESSION CIRCUIT AND DEVICES TO PERFORM THE SAME - A method of operating a data compression circuit includes receiving and storing a plurality of data blocks until a cache is full and writing the data blocks that have been stored in the cache to a buffer memory when the cache is full. The method also includes performing forced literal/literal encoding on each of the data blocks regardless of repetitiveness of each data block when the cache is full. | 07-10-2014 |
20140281279 | NONVOLATILE MEMORY DEVICE AND DATA MANAGEMENT METHOD THEREOF - A data management method of a nonvolatile memory device which includes a data cell area and a reference cell area includes selecting shared data from write data input to the memory device; generating reference data based on the shared data; and storing the write data in the data cell area and a first reference area of the reference cell area; and storing the reference data in a second reference area of the reference cell area. | 09-18-2014 |
20140281293 | METHOD OF OPERATING MEMORY CONTROLLER AND DEVICES INCLUDING MEMORY CONTROLLER - A method of operating a memory controller includes receiving a first data sequence and generating a coset representative sequence that can be divided into m-bit strings, where “m” is a natural number of at least 2; performing a first XOR operation on each of the m-bit strings in the coset representative sequence and binary bits; calculating all possible branch metrics according to a result of the first XOR operation; determining a survivor path sequence based on the all possible branch metrics; and performing a second XOR operation on the coset representative sequence and the survivor path sequence and generating an output sequence. | 09-18-2014 |
20140281816 | MEMORY CONTROLLER AND METHOD OF OPERATING THE SAME - A method of operating a memory controller is provided. The method includes determining a data state based on an input stream including multiple alphabet letters, converting a part of the input stream, which corresponds to a conversion size, into alphabet letters in a lower numeral system when the data state is determined to be a first state among multiple predetermined data states, inserting one of the converted alphabet letters into the input stream, and outputting each of the alphabet letters in the input stream as is when the data state is determined to be a second state among the predetermined data states. | 09-18-2014 |
20140281827 | MEMORY CONTROLLER, METHOD OF OPERATING THE SAME, AND SYSTEM INCLUDING THE SAME - A method of processing data using a memory controller includes determining at least one cell state to which each of a plurality of multi-level cells can be changed to based on a current cell state of each multi-level cell, where each multi-level cell includes a plurality of data pages; determining one of the data pages as having a stuck bit when a value of the data page has a single mapping value based on mapping values mapped to the at least one cell state and generating stuck bit data regarding the stuck bit; and encoding write data to be stored in the multi-level cells based on the stuck bit data. | 09-18-2014 |
20140355348 | FLASH MEMORY SYSTEM AND WORD LINE INTERLEAVING METHOD THEREOF - Provided are a flash memory system and a word line interleaving method thereof. The flash memory system includes a memory cell array, and a word line interleaving logic. The memory cell array is connected to a plurality of word lines. The word line (WL) interleaving logic performs an interleaving operation on WL data corresponding to at least two different wordlines and programming data, including the interleaved data, to the memory cell array. | 12-04-2014 |
20150029789 | NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL ARRAY WITH UPPER AND LOWER WORD LINE GROUPS - A nonvolatile memory device includes a memory cell array having multiple memory blocks. Each memory block includes memory cells arranged at intersections of multiple word lines and multiple bit lines. At least one word line of the multiple word lines is included in an upper word line group and at least one other word line of the multiple word lines is included in a lower word line group. The number of data bits stored in memory cells connected to the at least one word line included in the upper word line group is different from the number of data bits stored in memory cells connected to the at least one other word line included in the lower word line group. | 01-29-2015 |
20150058536 | MEMORY CONTROLLER HAVING STATE SHAPING ENGINE AND METHOD OF OPERATING SAME - A memory controller includes a state shaping encoder that receives k-bit write data, selects a logical page with reference to state shape mapping information, and changes data of the logical page to decrease an occurrence probability of a high-order program state among program states used to program the k-bit data in multi-level memory cells. | 02-26-2015 |