Patent application number | Description | Published |
20090194798 | BACKSIDE ILLUMINATED IMAGING SENSOR HAVING A CARRIER SUBSTRATE AND A REDISTRIBUTION LAYER - A backside illuminated imaging sensor includes a semiconductor substrate having a front surface and a back surface. The semiconductor substrate has at least one imaging array formed on the front surface. The imaging sensor also includes a carrier substrate to provide structural support to the semiconductor substrate, where the carrier substrate has a first surface coupled to the front surface of the semiconductor substrate. A redistribution layer is formed between the front surface of the semiconductor substrate and the second surface of the carrier substrate to route electrical signals between the imaging array and a second surface of the carrier substrate. | 08-06-2009 |
20090200452 | IMAGE SENSOR WITH BURIED SELF ALIGNED FOCUSING ELEMENT - An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and a buried focusing layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the semiconductor substrate above the optical sensor region. The metal layers include optical pass-throughs aligned to expose an optical path through the stack form a top dielectric layer through to the optical sensor region. The buried focusing layer is disposed over a conforming metal layer of the metal layers within the stack. The buried focusing layer includes a curved surface conformed by the optical pass-through of the conforming metal layer to focus light onto the optical sensor region. | 08-13-2009 |
20090200586 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH SILICIDE LIGHT REFLECTING LAYER - A backside illuminated imaging sensor includes a semiconductor layer, a metal interconnect layer and a silicide light reflecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel that includes a photodiode region is formed within the semiconductor layer. The metal interconnect layer is electrically coupled to the photodiode region and the silicide light reflecting layer is coupled between the metal interconnect layer and the front surface of the semiconductor layer. In operation, the photodiode region receives light from the back surface of the semiconductor layer, where a portion of the received light propagates through the photodiode region to the silicide light reflecting layer. The silicide light reflecting layer is configured to reflect the portion of light received from the photodiode region. | 08-13-2009 |
20090200587 | Masked laser anneal during fabrication of backside illuminated image sensors - A technique for fabricating an array of imaging pixels includes fabricating front side components on a front side of the array. After fabricating the front side components, a dopant layer is implanted on a backside of the array. A mask is formed over the dopant layer to selectively expose portions of the dopant layer. Next, the exposed portions of the dopant layer are laser annealed. Alternatively, the mask may be disposed over the backside prior to the formation of the dopant layer and the dopants implanted through the exposed portions and subsequently laser annealed. | 08-13-2009 |
20090200588 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH LIGHT REFLECTING TRANSFER GATE - A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain. | 08-13-2009 |
20090200589 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED INFRARED SENSITIVITY - A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer. | 08-13-2009 |
20090200590 | IMAGE SENSOR WITH LOW ELECTRICAL CROSS-TALK - An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells. | 08-13-2009 |
20090200622 | SELF-ALIGNED FILTER FOR AN IMAGE SENSOR - An image sensor includes at least one photosensitive element disposed in a semiconductor substrate. Metal conductors may be disposed on the semiconductor substrate. A filter may be disposed between at least two individual metal conductors and a micro-lens may be disposed on the filter. There may be insulator material disposed between the metal conductors and the semiconductor substrate and/or between individual metal conductors. The insulator material may be removed so that the filter may be disposed on the semiconductor substrate. | 08-13-2009 |
20090200623 | IMAGE SENSOR WITH MICRO-LENSES OF VARYING FOCAL LENGTHS - An image sensor having a plurality of micro-lenses disposed on a semiconductor substrate. A first micro-lens has a different focal length, height, shape, curvature, thickness, etc., than a second micro-lens. The image sensor may be back side illuminated or front side illuminated. | 08-13-2009 |
20090200624 | Circuit and photo sensor overlap for backside illumination image sensor - A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region. | 08-13-2009 |
20090200625 | BACKSIDE ILLUMINATED IMAGE SENSOR HAVING DEEP LIGHT REFLECTIVE TRENCHES - An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region. | 08-13-2009 |
20090200626 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR - A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light. | 08-13-2009 |
20090200631 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH LIGHT ATTENUATING LAYER - A backside illuminated imaging sensor includes a semiconductor substrate, a metal interconnect layer and a light attenuating layer. The semiconductor substrate has a front surface, a back surface, and includes at least one imaging pixel formed on the front surface of the semiconductor substrate. The metal interconnect layer is electrically coupled to the imaging pixel and the light attenuating layer is coupled between the metal interconnect layer and the front surface of the semiconductor substrate. In operation, the imaging pixel receives light from the back surface of the semiconductor substrate, where a portion of the received light propagates through the imaging pixel to the light attenuating layer. The light attenuating layer is configured to substantially attenuate the portion of light received from the imaging pixel. | 08-13-2009 |
20090201393 | Black reference pixel for backside illuminated image sensor - An imaging sensor pixel array includes a semiconductor substrate, a plurality of active pixels and at least one black reference pixel. The plurality of active pixels are disposed in the semiconductor substrate for capturing an image. Each of the active pixels includes a first region for receiving light including a p-n junction for accumulating an image charge and active pixel circuitry coupled to the first region to readout the image charge. The black reference pixel is also disposed within the semiconductor substrate for generating a black level reference value. The black reference pixel includes a second region for receiving light without a p-n junction and black pixel circuitry coupled to the photodiode region without the p-n junction to readout a black level reference signal. | 08-13-2009 |
20090267070 | Multilayer image sensor structure for reducing crosstalk - An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well. | 10-29-2009 |
20090302358 | CMOS image sensor with high full-well-capacity - An image sensor with a high full-well capacity includes a photosensitive region, a transfer gate, and sidewall spacers. The photosensitive region is formed to accumulate an image charge in response to light. The transfer gate disposed adjacent to the photosensitive region and coupled to selectively transfer the image charge from the photosensitive region to other pixel circuitry. First and second sidewall spacers are disposed on either side of the transfer gate. The first sidewall spacer closest to the photosensitive region is narrower than the second sidewall spacer. In some cases, the first sidewall spacer may be omitted. | 12-10-2009 |
20100013039 | Backside-illuminated imaging sensor including backside passivation - The disclosure describes embodiments of a process comprising forming a pixel on a frontside of a substrate, the substrate having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside. The thickness of the substrate is reduced by removing material from the backside of the substrate to allow for backside illumination of the pixel, and the backside of the substrate is treated with a hydrogen plasma to passivate the backside. The disclosure also describes embodiments of an apparatus comprising a semiconductor wafer having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside, and a pixel formed on the frontside, wherein the thickness of the wafer is selected and adjusted to allow for illumination of the pixel through the backside of the wafer, and wherein the backside is treated with a hydrogen plasma to passivate the backside. | 01-21-2010 |
20100084692 | IMAGE SENSOR WITH LOW CROSSTALK AND HIGH RED SENSITIVITY - A color pixel array includes first, second, and third pluralities of color pixels each including a photosensitive region disposed within a first semiconductor layer. In one embodiment, a second semiconductor layer including deep dopant regions is disposed below the first semiconductor layer. The deep dopant regions each reside below a corresponding one of the first plurality of color pixels but substantially not below the second and third pluralities of color pixels. In one embodiment, buried wells are disposed beneath the second and third pluralities of color pixels but substantially not below the first plurality of color pixels. | 04-08-2010 |
20100109060 | IMAGE SENSOR WITH BACKSIDE PHOTODIODE IMPLANT - An array of pixels is formed using a substrate. Each pixel can be formed on the substrate, which has a backside and a frontside that includes metalization layers. A photodiode is formed in the substrate and frontside P-wells are formed using frontside processing that are adjacent to the photosensitive region. A first N-type region is formed in the substrate below the photodiode. A second N-type region is formed in a region of the substrate below the first N-type region and is formed using backside processing. | 05-06-2010 |
20100123069 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED ANGULAR RESPONSE - A backside illuminated imaging pixel with improved angular response includes a semiconductor layer having a front and a back surface. The imaging pixel also includes a photodiode region formed in the semiconductor layer. The photodiode region includes a first and a second n-region. The first n-region has a centerline projecting between the front and back surfaces of the semiconductor layer. The second n-region is disposed between the first n-region and the back surface of the semiconductor layer such that the second n-region is offset from the centerline of the first n-region. | 05-20-2010 |
20100123174 | LIGHTLY-DOPED DRAINS (LDD) OF IMAGE SENSOR TRANSISTORS USING SELECTIVE EPITAXY - Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors. | 05-20-2010 |
20100159632 | TECHNIQUE FOR FABRICATION OF BACKSIDE ILLUMINATED IMAGE SENSOR - An array of backside illuminated image sensors is fabricated using a number of processes. These processes include fabricating front side components of the backside illuminated image sensors into or onto a first side of an epitaxial layer disposed over a substrate layer. Dopants are diffused from the substrate through a second side of the epitaxial layer to create a dopant gradient band in the epitaxial layer adjacent to the substrate layer. The backside of the array is then thinned to remove the substrate layer while retaining at least a portion of the dopant gradient band in the epitaxial layer. | 06-24-2010 |
20100271524 | MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK - An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type. | 10-28-2010 |
20110095188 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED INFRARED SENSITIVITY - A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer. | 04-28-2011 |
20110227184 | Apparatus Having Thinner Interconnect Line for Photodetector Array and Thicker Interconnect Line for Periphery Region - An apparatus of one aspect includes a photodetector array, and a peripheral region at a periphery of the photodetector array. A thinner interconnect line corresponding to the photodetector array is disposed within one or more insulating layers. A thicker interconnect line corresponding to the peripheral region is disposed within the one or more insulating layers. Other apparatus, methods, and systems are also disclosed. | 09-22-2011 |
20120295385 | LIGHTLY-DOPED DRAINS (LDD) OF IMAGE SENSOR TRANSISTORS USING SELECTIVE EPITAXY - Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors. | 11-22-2012 |
20120319242 | Dopant Implantation Hardmask for Forming Doped Isolation Regions in Image Sensors - Forming a doped isolation region in a substrate during manufacture of an image sensor. A method of an aspect includes forming a hardmask layer over the substrate, and forming a photoresist layer over the hardmask layer. An opening is formed in the photoresist layer over an intended location of the doped isolation region. An opening is etched in the hardmask layer by exposing the hardmask layer to one or more etchants through the opening. The opening in the hardmask layer may have a width of less than 0.4 micrometers. The doped isolation region may be formed in the substrate beneath the opening in the hardmask layer by performing a dopant implantation that introduces dopant through the opening in the hardmask layer. The method of an aspect may include forming sidewall spacers on sidewalls of the opening in the hardmask layer and using the sidewall spacers as a dopant implantation mask. | 12-20-2012 |
20130056809 | Image Sensor with Reduced Noiseby Blocking Nitridation Over Selected Areas - An image sensor is described in which the imaging pixels have reduced noise by blocking nitridation in selected areas. In one example, an imaging pixel of an image sensor includes a photodiode region to accumulate an image charge in response to incident light, a first transistor having a gate oxide layer, the gate oxide layer having a first level of nitridation, and a second transistor having a gate oxide layer, the gate oxide layer having a second level of nitridation that is higher than the first level of nitridation. | 03-07-2013 |