Patent application number | Description | Published |
20150021897 | Restraining device for a rider of a vehicle, method for using such a restraining device, garment for a rider of a vehicle, and safety system for the detachable binding of a rider to a vehicle - A restraining device, for a rider of a vehicle, includes a restraining belt that is integratable or is integrated at least partly into a garment of the rider, the restraining belt being configured so as to encompass at least one bodily region of the rider, and includes a connecting element that is connectable or is connected to the restraining belt, the connecting element being configured to bind the rider detachably to the vehicle. | 01-22-2015 |
20150057888 | METHOD FOR REDUCING THE STEERING TORQUE OF A TWO-WHEELER WHEN NEGOTIATING CURVES - A method for reducing the steering torque of a two-wheeler when negotiating curves. For the case that the front wheel is braked while negotiating a curve, the damping in an adaptive steering stamper is increased as a function of at least one state variable characterizing the negotiation of a curve. | 02-26-2015 |
20150130943 | METHOD FOR WARNING A DRIVER OF A SINGLE-TRACK MOTOR VEHICLE OF LEAVING THE TRAFFIC LANE - In a method for warning a driver of a single-track motor vehicle of leaving the traffic lane, at least one traffic lane boundary is ascertained by a video sensor system, the lateral distance of a reference point on the motor vehicle from the traffic lane boundary is ascertained, lean angle information of the motor vehicle describing the lean angle of the motor vehicle is ascertained, and it is ascertained, with the aid of at least the lateral distance and the lean angle information, whether part of the vehicle or of the rider projects beyond the traffic lane boundary. | 05-14-2015 |
20150365603 | CAMERA SYSTEM FOR A VEHICLE, METHOD AND DEVICE FOR CONTROLLING AN IMAGE AREA OF AN IMAGE FROM A VEHICLE CAMERA FOR A VEHICLE - A method is provided for controlling an image area of an image from a vehicle camera for a vehicle. The method includes a step of ascertaining positional information, which represents a road position of the vehicle relative to a road section on which the vehicle is traveling, using vehicle sensor data of the vehicle. In addition, method includes a step of generating a control signal for controlling the image area of the image from the vehicle camera, the generating utilizing the positional information. | 12-17-2015 |
20150367860 | method and device for assisting the driver of a two-wheeled vehicle in approaching curves - A method and a device for assisting the driver of a two-wheeled vehicle in approaching curves, in which the topology of a curve lying ahead of the two-wheeled vehicle in the driving direction is ascertained with the aid of a navigation system, a suitable travel trajectory for safe cornering is ascertained, the position of the two-wheeled vehicle inside the own traffic lane is determined, and an information arrangement informs the driver about the direction in which to steer the two-wheeled vehicle in order to reach the ascertained driving trajectory. | 12-24-2015 |
Patent application number | Description | Published |
20080210516 | DEVICE FOR SUPPORTING PLATE-LIKE MATERIALS FOR AT LEAST ONE SEPARATING PROCESS - The invention relates to a device for supporting sheet-like materials for at least one separating process in the sheet-like materials, with at least one jet cutter device which may be displaced in the Y-direction during a separation process, with a first and second support surface together forming a support table for supporting the sheet-like material and with a jet trapping device, arranged between the first and second support surfaces and provided to be able to be displaced in the X-direction. The first and the second support surfaces are made from a flexible material forming part of at least one enclosed chamber, filled with a gas under pressure. | 09-04-2008 |
20090107206 | ARRANGEMENT FOR PROCESSING SHEET METAL - A mechanical arrangement for processing sheet metal includes a sheet metal processing device, a transport device configured to position a sheet metal workpiece relative to the sheet metal processing device, the transport device including at least one workpiece carrier that is movable along a transport path that extends along a first transport line and a second transport line, and at least two X-guides and at least two Y-guides, the X-guides arranged parallel with the first transport line and the Y-guides arranged parallel with the second transport line. The at least two X-guides and the at least two Y-guides are configured to be coupled to each other by a transfer device to form a transport course, the workpiece carrier circulates along the X-guides and the Y-guides, and the transfer device is configured to move the workpiece carrier from one of the X-guides to one of the Y-guides. | 04-30-2009 |
20090184097 | WORKPIECE SUPPORT CLEANING - A mechanical apparatus maintains and/or cleans support strips of a workpiece support that forms a support plane for supporting workpieces. The mechanical apparatus includes a transport device for moving the workpiece support along a transport axis X and a service device that has a tool for processing the support strips. The service device is movable by means of a mechanical movement unit along a movement axis Y that is arranged at an angle relative to the transport axis X and/or along a movement axis Z that is arranged at an angle relative to the transport axis X and that is different from the movement axis Y, with the movement of the workpiece support along the transport axis X and the movement of the service device along the movement axis Y and/or along the movement axis Z being controllable in a coordinated manner by means of a control unit. | 07-23-2009 |
20100132526 | Apparatus for Holding a Plate-Like Material During a Separation Process - An apparatus for holding a plate-like material during a separation process. The apparatus includes a separating device that is movable, during the separation process, in a first axial direction that is transverse to a second axial direction that the plate-like material is conveyed in during the separation process. The apparatus also includes first and second transport tables. The first transport table has a first contact surface and the second transport table has a second contact surface. The first contact surface and the second contact surface are spaced apart by a gap along which the separating device is movable. The apparatus also includes at least one holding device that is operable hold the plate-like material relative to the first and second contact surfaces such that the plate-like material is movable along the first and second contact surfaces. The holding device is configured to support the plate-like material such that a first surface of the plate-like material, on which a cutting beam of the separating device impinges, faces toward the first and second contact surfaces during the separation process. | 06-03-2010 |
20110024401 | Recovery of Energy from a Laser Machining System - A method for the recovery of energy from a laser machining system and a device for performing the same, in which the method includes operating the laser machining system and generating thermal energy having a maximum temperature T | 02-03-2011 |
20120234802 | Machining Work Pieces with a Laser Apparatus and an Electric Arc Apparatus - A technique for machining work pieces with a laser apparatus and an electric arc apparatus includes generating a plasma gas jet with the electric arc apparatus, generating a laser beam with the laser apparatus, generating an electric arc with the electric arc apparatus, guiding the electric arc through the laser beam to a machined spot inside or on a work piece, and cutting the work piece with the electric arc or the plasma gas jet. | 09-20-2012 |
20140343712 | SWITCHING BETWEEN WORKPIECE PROCESSING OPERATING MODES OF A PROCESSING MACHINE - Methods, systems, and apparatus, including computer programs encoded on computer storage media, for switching between different operating modes on a processing machine. The operating modes are different from one another in respect of operator intervention requirements of an operator of the processing machine, One of the methods includes switching from a first operating mode to a second operating mode, looking up stored operating settings specific to the second operating mode and related to one or more potential operator interventions, changing operation of the processing machine in accordance of the stored operating settings specific to the second operating mode, and providing feedback to the operator of the machine, indicating whether a switch to the second operating mode is complete or whether at least one of the potential operator interventions is required. | 11-20-2014 |
Patent application number | Description | Published |
20090194715 | LASER SCANNING MICROSCOPE AND ASSEMBLY FOR NON-DESCANNED DETECTION - A scanning microscope with a light source which emits illumination light for illuminating a specimen, with at least a first detector for detecting the detection light proceeding from the specimen, and with an objective through which the specimen can be illuminated and detected, wherein the objective is arranged in an illumination beam path and in a detection beam path, and with a second detector for non-descanned detection of the detection light proceeding from the specimen, wherein a compact assembly is provided which comprises a housing which is attached to a microscope stand and which has at least one receptacle for a microscope objective for the illumination beam path and/or detection beam path of the scanning microscope, wherein at least the second detector is arranged in the housing and can be acted upon by specimen light. | 08-06-2009 |
20100265573 | Safety System For A Laser Radiation Device - A laser radiation-guiding device including: a laser including a control unit; ports for connection of one module each, it being possible that laser radiation may exit at the ports. The device further can include joining part sensors respectively assigned to a port and whose electrical condition depends on whether a predetermined joining part is spaced apart from the respective port by less than a maximum distance in a predetermined orientation relative to the respective port, and an evaluating unit connected to the joining part sensors via a signal link that detects the electrical conditions of the joining part sensors and, depending on the detected conditions, emits a control signal to the control unit of the laser or to a laser radiation-blocking unit, by which emission of eye-damaging laser radiation to the ports of the device can be prevented inhibited. | 10-21-2010 |
20100309573 | Optics Changer - The invention relates to an optics changer for arranging an optical element in a target position in a changer chamber g of an optical device accessible from the outside via a insertion channel, comprising a base frame and the optical element that is pivotally fastened to the base frame via a swivel mechanism, wherein the swivel mechanism effects a pivoting movement of the optical element when the optics changer is inserted through the insertion channel in the changer chamber starting at o a predetermined insertion depth such that after inserting, the optical element is placed and pivoted in the target position. | 12-09-2010 |
20100315706 | TUBE UNIT FOR MICROSCOPES - A tube unit for microscopes which has a tube lens, including two components with an intermediate, large air separation and an overall positive refractive power. The air separation is at least half the size of the focal length f of the tube lens. A roof edge mirror or another suitable deflection element is arranged between the two components of the tube lens. The roof edge mirror includes two mirrors which can be tilted with respect to one another, and which is able to be tilted around its roof edge. The tilting movement or the tilting angle of the tiltable mirror or deflection element corresponds to half the tilt or half the tilting angle of the tube or eyepiece viewing system. | 12-16-2010 |
20110038041 | OPERATING DEVICE FOR THE FOCUSING OPERATION OF A MICROSCOPE - The focusing operation of a microscope, control rotary knobs which receive the motion of fingers or hand of an operator to change the focus position relative to a sample under observation. Two of the control rotary knobs are on a common shaft and coaxial with one another and rotationally fixed with respect to one another, and are connected to a position encoder. A toggle switch which is connected to the control circuit and can be actuated by touching or moving one or both rotary control knobs. Whereby the drive circuit is configured such that it generates, as a function of the rotation of the two rotary knobs and as a function of the actuation or position of the toggle switch, a rough or fine adjustment of the focus position relative to the sample under observation. | 02-17-2011 |
Patent application number | Description | Published |
20120190462 | TORSION VIBRATION DAMPER AND DAMPING DEVICE AND TORQUE TRANSMISSION DEVICE - A torsion vibration damper for a drive train of a motor vehicle, in particular a drive train of a hybrid vehicle, comprising: a spring support and a force transmission flange configured rotatable relative to the spring support, wherein at least one compression spring is provided between the spring support and the force transmission flange for transferring a mechanical torque, wherein a housing of the spring support is configured so that in a radial direction of the torsion vibration damper, at least one longitudinal end of the compression spring is supported at/in the spring support housing and/or a clearance remains between windings of a center section of the compression spring and a wall of the spring support. | 07-26-2012 |
20130116079 | Transmission for operating an auxiliary assembly - A transmission for operating an auxiliary assembly in a drivetrain of a hybrid vehicle, includes a first sun gear rotatable about a main axis on a drive input side of the transmission, a first planet gear in engagement with the first sun gear on the drive input side of the transmission, a second planet gear on a drive output side of the transmission and mounted with the first planet gear on a common shaft, and a second sun gear in engagement with the second planet gear on the drive output side of the transmission, for coupling to the auxiliary assembly. The first planet gear is connected to the shaft by a first freewheel, which generates a rotationally conjoint connection when the first planet gear overruns in a first direction of rotation, and generates a freewheeling connection when the first planet gear overruns in a second, opposite direction of rotation. The shaft is mounted in a second freewheel in a planet carrier, which second freewheel permits a rotation of the shaft when the shaft rotates about its axis in the first direction of rotation and blocks a rotation of the shaft in the second, opposite direction of rotation. | 05-09-2013 |
Patent application number | Description | Published |
20090216050 | PROCESS FOR THE PREPARATION OF 1,2-PROPANEDIOL - The present invention relates to a process for the preparation of 1,2-propanediol, in which a glycerol-containing stream, in particular a stream obtained on an industrial scale in the production of biodiesel, is subjected to a hydrogenation. | 08-27-2009 |
20100240934 | METHOD FOR PRODUCING 1,2-PROPANDIOL BY HYDROGENATING GLYCERINE IN A TWO-STEP REACTOR CASCADE - The present invention relates to a process for preparing 1,2-propanediol, in which a glycerol-containing stream, especially a stream obtained on the industrial scale in the production of biodiesel, is subjected to a hydrogenation in a two-stage reactor cascade. | 09-23-2010 |
20140343329 | PROCESS FOR PREPARING DEODORIZED 1,2-PROPANEDIOL - The present invention relates to a process for preparing deodorized 1,2-propanediol, to the use of the purified propanediol and to an apparatus for performing the process. | 11-20-2014 |
Patent application number | Description | Published |
20090265778 | Attack protection for a packet-based network - The invention relates to a protection unit ( | 10-22-2009 |
20090313698 | Method for protecting a packet-based network from attacks, and security border node - The invention relates to a security border node ( | 12-17-2009 |
20120084428 | METHOD OF CONTROLLING A NETWORK COMPUTING CLUSTER PROVIDING IT-SERVICES - The network computing cluster includes one or more network computing stations and one or more power autarkic network computing stations supplied by one or more associated local power generators. The power autarkic network computing stations and the local power generators are connected with a local power network. A control signal is sent to a resource managing unit of the network computing cluster via a communication network. The control signal indicates the ability of the power autarkic network computing stations to process IT-services. The resource managing unit receives the control signal via the communication network. Triggered by the control signal, the resource managing unit sends a signal for transferring an IT-service processed by a network computing station of the network computing stations to the network computing station via the communication network. The processed IT-service is transferred to one of the power autarkic network computing stations via the communication network. | 04-05-2012 |
20140317167 | DISTRIBUTED MAPPING FUNCTION FOR LARGE SCALE MEDIA CLOUDS - The present document relates to cloud computing. In particular, the present document relates to methods and systems for cloud computing which enable the efficient and flexible placement of application components within a cloud. A computing device ( | 10-23-2014 |
20150066929 | METHOD FOR MAPPING MEDIA COMPONENTS EMPLOYING MACHINE LEARNING - The present document relates to cloud computing. In particular, the present document relates to methods and systems for cloud computing which enable the efficient and flexible placement of application components within a cloud. A computing device ( | 03-05-2015 |
Patent application number | Description | Published |
20090026542 | INTEGRATED CIRCUIT INCLUDING A SEMICONDUCTOR ASSEMBLY IN THIN-SOI TECHNOLOGY - An integrated circuit including a semiconductor assembly in thin-film SOI technology is disclosed. One embodiment provides a semiconductor assembly in thin-film SOI technology including a first semiconductor substrate structure of a second conductivity type inverse to a first conductivity type in a semiconductor substrate below a first semiconductor layer, a second semiconductor substrate structure of a second conductivity type in a semiconductor substrate below a second semiconductor layer structure, and a third semiconductor substrate structure of the first conductivity type below the first semiconductor layer structure in the semiconductor substrate and otherwise surrounded by the first semiconductor substrate structure. | 01-29-2009 |
20110095392 | HIGH VOLTAGE RESISTANCE COUPLING STRUCTURE - The disclosed invention provides a structure and method for providing a high lateral voltage resistance between the electrical networks, sharing a lateral plane, of conductive elements (e.g., having different high voltage potentials) comprising a coupler. In one embodiment, an integrated coupler providing a high lateral voltage resistance comprises a primary conductive element and a secondary conductive element. An isolating material is laterally configured between the electrical network of the primary conductive element and an electrical network of the secondary conductive element. The isolating material may comprise a low-k dielectric layer and prevents any lateral barrier layers (e.g., etch stop layers, diffusion barrier layers, etc.) from extending between the first conductive element and the electrical network of the second conductive element. The structure therefore provides a galvanically isolated integrated coupler which avoids electrical shorting between circuits (e.g., at barrier layers) resulting in an improved high voltage resistance. | 04-28-2011 |
20110115007 | Power Semiconductor Component with Plate Capacitor Structure Having an Edge Plate Electrically Connected to Source or Drain Potential - A lateral power semiconductor component has a front side, a rear side and a lateral edge. The component further includes a drift zone of a first conductivity type, a source zone of the first conductivity type, a body zone of a second conductivity type opposite the first conductivity type, and a drain zone of the first conductivity type. A gate forms a MOS structure with the drift zone, the source zone and the body zone. A horizontally extending field plate above each semiconductor region of the power semiconductor component forms a plate capacitor structure with an edge plate lying under the field plate. The edge plate includes a highly doped semiconductor material and is electrically connected to one of a source potential and a drain potential of the power semiconductor component. | 05-19-2011 |
20110133262 | Power Semiconductor Component with Plate Capacitor Structure and Edge Termination - A semiconductor component includes a body with a drift zone, a source zone, a body zone, and a drain zone. A gate forms a MOS structure with the drift zone, with the source zone and with the body zone. An edge termination between the lateral edge and the MOS structure includes a plurality of field rings which enclose the MOS structure. The lateral edge is at the same potential as the drift zone, and the edge termination reduces voltage between the lateral edge and the source zone. A horizontally extending edge plate is disposed at the front side between the lateral edge and the edge termination. The edge plate is at the same potential as the drift zone and forms a plate capacitor structure including a field plate lying above the edge plate. | 06-09-2011 |
20110241160 | High Voltage Semiconductor Devices and Methods of Forming the Same - High voltage semiconductor devices and methods of fabrication thereof are described. In one embodiment, a method of forming a semiconductor device includes forming first trenches in an insulating material. A trap region is formed in the insulating material by introducing an impurity into the first trenches. The first trenches are filled with a conductive material. | 10-06-2011 |
20120181874 | Semiconductor Device and Method of Manufacture Thereof - A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip. | 07-19-2012 |
20120273917 | High Voltage Resistance Coupling Structure - The disclosed invention provides a structure and method for providing a high lateral voltage resistance between the electrical networks, sharing a lateral plane, of conductive elements (e.g., having different high voltage potentials) comprising a coupler. In one embodiment, an integrated coupler providing a high lateral voltage resistance comprises a primary conductive element and a secondary conductive element. An isolating material is laterally configured between the electrical network of the primary conductive element and an electrical network of the secondary conductive element. The isolating material may comprise a low-k dielectric layer and prevents any lateral barrier layers (e.g., etch stop layers, diffusion barrier layers, etc.) from extending between the first conductive element and the electrical network of the second conductive element. The structure therefore provides a galvanically isolated integrated coupler which avoids electrical shorting between circuits (e.g., at barrier layers) resulting in an improved high voltage resistance. | 11-01-2012 |
20130087921 | Semiconductor Arrangement for Galvanically Isolated Signal Transmission and Method for Producing Such an Arrangement - A semiconductor arrangement includes an artificial chip having a semiconductor chip and an electrically insulating molding compound. The semiconductor chip has circuit structures and is embedded into the molding compound at all sides other than at a base area of the semiconductor chip in such a way that a base area of the artificial chip is enlarged by the molding compound relative to the base area of the semiconductor chip. A thin-film substrate is applied to the enlarged base area and extends beyond the base area of the semiconductor chip into the enlarged base area. The substrate has at least two layers composed of nonconductive material between which a structured metallization is disposed. A first coil is formed by one or a plurality of structured metallization layers in the substrate. A second coil is magnetically and/or capacitively coupled to the first coil and galvanically isolated from the first coil. | 04-11-2013 |
20130328166 | Semiconductor Device and Method of Manufacture Thereof - A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip. | 12-12-2013 |
20140159220 | Semiconductor Device and Method of Manufacture Thereof - A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip. | 06-12-2014 |
20150115358 | Semiconductor Device - The present disclosure provides a semiconductor device, including a compensation area that includes p-regions and n-regions, a plurality of transistor cells including gate electrodes on the compensation area, and one or more interconnections for electrically connecting gate electrodes. The gate electrodes may have a width smaller than ½ of a pitch of the cells. | 04-30-2015 |
20150116031 | Semiconductor Device and Integrated Apparatus Comprising the same - The present disclosure provides a semiconductor device and an integrated apparatus having the same. The semiconductor device includes a substrate, a buffer layer on the substrate, a compensation area which includes a p-region and a n-region on the buffer layer, and a transistor cell on the compensation area. The transistor cell includes a source region, a body region, a gate electrode and a gate dielectric formed at least between the gate electrode and the body region. The gate dielectric has a thickness in a range of 12 nm to 50 nm. | 04-30-2015 |
Patent application number | Description | Published |
20090195335 | SEMICONDUCTOR CONFIGURATION HAVING AN INTEGRATED COUPLER AND METHOD FOR MANUFACTURING SUCH A SEMICONDUCTOR CONFIGURATION - A semiconductor configuration having an integrated coupler is provided. The semiconductor configuration includes a coupler which is integrated in the substrate and which includes a first port and a second port. The coupler defines, in a plan view onto the substrate, an inner region of the substrate surrounded at least in sections by the coupler, and an outer region of the substrate arranged outside to the coupler. The coupler is at least a magnetic coupler, a capacitive coupler, or a combination of both. At least a circuit element is integrated in the inner region of the substrate and includes a port which is electrically connected to the second port of the coupler. | 08-06-2009 |
20110148549 | Signal Transmission Arrangement - A signal transmission arrangement includes input terminals for receiving an input signal and output terminals for providing an output signal. A first transformer has a primary winding and a secondary winding, the primary winding being coupled to the input terminals. A second transformer has a primary winding and a secondary winding, the primary winding being coupled to the secondary winding of the first transformer, and the secondary winding being coupled to the output terminals. | 06-23-2011 |
20110176339 | Signal Transmission Arrangement - A signal transmission arrangement is disclosed. A voltage converter includes a signal transmission arrangement. | 07-21-2011 |
20120080770 | Transformer Arrangement - A transformer arrangement and a method for producing a transformer arrangement is disclosed. | 04-05-2012 |
20130224921 | LATERAL TRENCH TRANSISTOR, AS WELL AS A METHOD FOR ITS PRODUCTION - A method for production of doped semiconductor regions in a semiconductor body of a lateral trench transistor includes forming a trench in the semiconductor body and introducing dopants into at least one area of the semiconductor body that is adjacent to the trench, by carrying out a process in which dopants enter the at least one area through inner walls of the trench. | 08-29-2013 |
20130249602 | Semiconductor Arrangement with a Power Transistor and a High Voltage Device Integrated in a Common Semiconductor Body - A semiconductor arrangement includes a semiconductor body and a power transistor including a source region, a drain region, a body region and a drift region arranged in the semiconductor body, a gate electrode arranged adjacent to the body region and dielectrically insulated from the body region by a gate dielectric. The semiconductor arrangement further includes a high voltage device arranged within a well-like dielectric structure in the semiconductor body and comprising a further drift region. | 09-26-2013 |
20130307058 | Semiconductor Devices Including Superjunction Structure and Method of Manufacturing - A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A superjunction structure in the semiconductor body includes drift regions of a first conductivity type and compensation structures alternately disposed in a first direction parallel to the first surface. Each of the charge compensation structures includes a first semiconductor region of a second conductivity type complementary to the first conductivity type and a first trench including a second semiconductor region of the second conductivity type adjoining the first semiconductor region. The first semiconductor region and the first trench are disposed one after another in a second direction perpendicular to the first surface. | 11-21-2013 |
20140001552 | Super Junction Semiconductor Device Comprising a Cell Area and an Edge Area | 01-02-2014 |
20140231903 | Semiconductor Device with a Super Junction Structure Having a Vertical Impurity Distribution - A super junction semiconductor device includes a semiconductor portion with parallel first and second surfaces. An impurity layer of a first conductivity type is formed in the semiconductor portion. Between the first surface and the impurity layer a super junction structure includes first columns of the first conductivity type and second columns of a second conductivity type. A sign of a compensation rate between the first and second columns may change along a vertical extension of the columns perpendicular to the first surface. A body zone of the second conductivity type is formed between the first surface and one of the second columns. A field extension zone of the second conductivity type may be electrically connected to the body zone or a field extension zone of the first conductivity type may be connected to the impurity layer. The field extension zone improves the avalanche characteristics of the semiconductor device. | 08-21-2014 |
20140231904 | Super Junction Semiconductor Device with Overcompensation Zones - According to an embodiment, a super junction semiconductor device may be manufactured by introducing impurities of a first impurity type into an exposed surface of a first semiconductor layer of the first impurity type, thus forming an implant layer. A second semiconductor layer of the first impurity type may be provided on the exposed surface and trenches may be etched through the second semiconductor layer into the first semiconductor layer. Thereby first columns with first overcompensation zones obtained from the implant layer are formed between the trenches. Second columns of the second conductivity type may be provided in the trenches. The first and second columns form a super junction structure with a vertical first section in which the first overcompensation zones overcompensate a corresponding section in the second columns. | 08-21-2014 |
20140231909 | Super Junction Semiconductor Device Comprising Implanted Zones - In a semiconductor substrate with a first surface and a working surface parallel to the first surface, columnar first and second super junction regions of a first and a second conductivity type are formed. The first and second super junction regions extend in a direction perpendicular to the first surface and form a super junction structure. The semiconductor portion is thinned such that, after the thinning, a distance between the first super junction regions having the second conductivity type and a second surface obtained from the working surface does not exceed 30 μm. Impurities are implanted into the second surface to form one or more implanted zones. The embodiments combine super junction approaches with backside implants enabled by thin wafer technology. | 08-21-2014 |
20140231910 | Manufacturing a Super Junction Semiconductor Device and Semiconductor Device - A super junction semiconductor device includes a semiconductor portion with a first surface and a parallel second surface. A doped layer of a first conductivity type is formed at least in a cell area. Columnar first super junction regions of a second, opposite conductivity type extend in a direction perpendicular to the first surface. Columnar second super junction regions of the first conductivity type separate the first super junction regions from each other. The first and second super junction regions form a super junction structure between the first surface and the doped layer. A distance between the first super junction regions and the second surface does not exceed 30 μm. The on-state or forward resistance of low-voltage devices rated for reverse breakdown voltages below 1000 V can be defined by the resistance of the super junction structure. | 08-21-2014 |
20140231928 | Super Junction Semiconductor Device with an Edge Area Having a Reverse Blocking Capability - A semiconductor device includes a semiconductor layer with a super junction structure including first columns of a first conductivity type and second columns of a second conductivity type opposite the first conductivity type. The super junction structure is formed in a cell area and in an inner portion of an edge area surrounding the cell area. In the inner portion of the edge area a reverse blocking capability is locally reduced by a local modification of the semiconductor layer. The local modification allows an electric field to extend in case an avalanche breakdown occurs. The reverse blocking capability is locally reduced in the edge area, wherein once an avalanche breakdown has been triggered the semiconductor device accommodates a higher reverse voltage. Avalanche ruggedness is improved. | 08-21-2014 |
20140332885 | Trench Transistor Having a Doped Semiconductor Region - A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region. | 11-13-2014 |
20150056782 | Method of Manufacturing a Super Junction Semiconductor Device with Overcompensation Zones - According to an embodiment, a super junction semiconductor device may be manufactured by introducing impurities of a first impurity type into an exposed surface of a first semiconductor layer of the first impurity type, thus forming an implant layer. A second semiconductor layer of the first impurity type may be provided on the exposed surface and trenches may be etched through the second semiconductor layer into the first semiconductor layer. Thereby first columns with first overcompensation zones obtained from the implant layer are formed between the trenches. Second columns of the second conductivity type may be provided in the trenches. The first and second columns form a super junction structure with a vertical first section in which the first overcompensation zones overcompensate a corresponding section in the second columns. | 02-26-2015 |
20150132890 | Signal Transmission Arrangement - A signal transmission arrangement is disclosed. A voltage converter includes a signal transmission arrangement. | 05-14-2015 |
20150145038 | SUPER JUNCTION SEMICONDUCTOR DEVICE HAVING COLUMNAR SUPER JUNCTION REGIONS - A super junction semiconductor device includes a semiconductor portion with a first surface and a second surface parallel to the first surface. The semiconductor portion includes a doped layer of a first conductivity type formed at least in a cell area. The super junction semiconductor device further includes columnar first super junction regions of a second, opposite conductivity type extending in a direction perpendicular to the first surface and separated by columnar second super junction regions of the first conductivity type. The first and second super junction regions form a super junction structure between the first surface and the doped layer. A distance between the first super junction regions and the second surface does not exceed 30 μm. | 05-28-2015 |
20150162324 | HALF-BRIDGE CIRCUIT WITH A LOW-SIDE TRANSISTOR AND A LEVEL SHIFTER TRANSISTOR INTEGRATED IN A COMMON SEMICONDUCTOR BODY - A half-bridge circuit includes a low-side transistor and a high-side transistor each having a load path and a control terminal. The half-bridge circuit further includes a high-side drive circuit having a level shifter with a level shifter transistor. The low-side transistor and the level shifter transistor are integrated in a common semiconductor body. | 06-11-2015 |