Patent application number | Description | Published |
20090192179 | CHROMAN DERIVATIVES - The invention relates to novel chroman derivatives, stereoisomers and pharmaceutically acceptable salts of Formula I | 07-30-2009 |
20100094899 | SYSTEM FOR ASSEMBLING AND PROVIDING PROBLEM SOLVING FRAMEWORKS - A system is described for assembling and providing problem solving frameworks. The system may include a processor, a memory and an interface. The memory may store a template for solving a problem. The template may include several tasks, each task associated with an attribute indicating whether the task should be performed by a machine. The interface may communicate with a user and components. The processor may receive a request to solve a problem and may identify the template for solving the problem. The processor may assign each task in the template to a machine component if the associated attribute indicates a machine should perform the task. The processor may provide the tasks to the assigned components and may receive responses from the assigned components. The processor may determine a solution to the problem based on the responses received from the components, and may provide the solution to the user. | 04-15-2010 |
20100110728 | LIGHT-EMITTING DIODE (LED) DEVICES COMPRISING NANOCRYSTALS - The present invention provides light-emitting diode (LED) devices comprises compositions and containers of hermetically sealed luminescent nanocrystals. The present invention also provides displays comprising the LED devices. Suitably, the LED devices are white light LED devices. | 05-06-2010 |
20100144103 | Method, System and Apparatus for Gating Configurations and Improved Contacts in Nanowire-Based Electronic Devices - Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core. | 06-10-2010 |
20100155749 | LIGHT-EMITTING DIODE (LED) DEVICES COMPRISING NANOCRYSTALS - The present invention provides light-emitting diode (LED) devices comprises compositions and containers of hermetically sealed luminescent nanocrystals. The present invention also provides displays comprising the LED devices. Suitably, the LED devices are white light LED devices. | 06-24-2010 |
20100167512 | Methods for Nanostructure Doping - Methods of doping nanostructures, such as nanowires, are disclosed. The methods provide a variety of approaches for improving existing methods of doping nanostructures. The embodiments include the use of a sacrificial layer to promote uniform dopant distribution within a nanostructure during post-nanostructure synthesis doping. In another embodiment, a high temperature environment is used to anneal nanostructure damage when high energy ion implantation is used. In another embodiment rapid thermal annealing is used to drive dopants from a dopant layer on a nanostructure into the nanostructure. In another embodiment a method for doping nanowires on a plastic substrate is provided that includes depositing a dielectric stack on a plastic substrate to protect the plastic substrate from damage during the doping process. An embodiment is also provided that includes selectively using high concentrations of dopant materials at various times in synthesizing nanostructures to realize novel crystallographic structures within the resulting nanostructure. | 07-01-2010 |
20100323500 | System and Process for Producing Nanowire Composites and Electronic Substrates Therefrom - The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength. | 12-23-2010 |
20110034038 | Methods and devices for forming nanostructure monolayers and devices including such monolayers - Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). | 02-10-2011 |
20110045660 | Large-Area Nanoenabled Macroelectronic Substrates and Uses Therefor - A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described. | 02-24-2011 |
20110204432 | Methods and Devices for Forming Nanostructure Monolayers and Devices Including Such Monolayers - Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing are also provided. | 08-25-2011 |
20110312163 | Large Area Nanoenabled Macroelectronic Substrates and Uses Therefor - A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described. | 12-22-2011 |
20120031486 | Nanoparticle Plasmon Scattering Layer for Photovoltaic Cells - The present invention relates to nanoparticle compositions for use in photovoltaic cells. Nanoparticles are utilized to provide increased scattering and also wavelength shifting to increase the efficiency of the photovoltaic cells. Exemplary nanoparticles include colloidal metal and fluorescent nanoparticles. | 02-09-2012 |
20130181603 | Light-Emitting Diode (LED) Devices Comprising Nanocrystals - The present invention provides light-emitting diode (LED) devices comprises compositions and containers of hermetically sealed luminescent nanocrystals. The present invention also provides displays comprising the LED devices. Suitably, the LED devices are white light LED devices. | 07-18-2013 |
20130196460 | Light-Emitting Diode (LED) Devices Comprising Nanocrystals - The present invention provides light-emitting diode (LED) devices comprises compositions and containers of hermetically sealed luminescent nanocrystals. The present invention also provides displays comprising the LED devices. Suitably, the LED devices are white light LED devices. | 08-01-2013 |
20140001405 | Highly Luminescent Nanostructures and Methods of Producing Same | 01-02-2014 |
20140035011 | METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS - Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing also are provided. | 02-06-2014 |
20140183613 | ELECTRON BLOCKING LAYERS FOR ELECTRONIC DEVICES - Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide, hafnium oxide, and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multi state (e.g., two, three or four bit) operation. | 07-03-2014 |
20140206182 | METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS - Methods are provided for forming a nanostructure array. An example method includes providing a first layer, providing nanostructures dispersed in a solution comprising a liquid form of a spin-on-dielectric, wherein the nanostructures comprise a silsesquioxane ligand coating, disposing the solution on the first layer, whereby the nanostructures form a monolayer array on the first layer, and curing the liquid form of the spin-on-dielectric to provide a solid form of the spin-on-dielectric. Numerous other aspects are provided. | 07-24-2014 |